SEARCH · Engineering Papers
Results for “Platform materials”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Silicon-Lattice-Matched Boron-Doped Gallium Phosphide: A Scalable Acousto-Optic Platform
The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide bandgap, strong nonlinear properties, and large acousto-optic figure of merit. Here, this study demonstrates that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths, respectively. It further demonstrates the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional mapping, combined with ab initio calculations, indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.
Electronic Correlation and Topology in f-Electron Quantum Matter [Slides]
After introducing quantum matter, topological insulators, and interacting topological systems, the presentation focuses on f-electron quantum matter including the electronic structure and topological classification of PuB 4 , the electronic structure of Ce 3 Pt 3 Bi 4 /Ce 3 Pd 3 Bi 4 family of heavy fermion systems, and the electronic structure of CeBi. In summary, f-electron quantum materials provides a powerful material platform to explore exotic states from the interplay of electronic correlation and topology
Manipulating topological properties in Bi 2 Se 3 / BiSe /transition metal dichalcogenide heterostructures with interface charge transfer
Heterostructures of topological insulator Bi 2 Se 3 on transition metal dichalcogenides (TMDCs) offer a new materials platform for studying novel quantum states by exploiting the interplay among topological orders, charge orders and magnetic orders. Here, the diverse interface attributes, such as material combination, charge re-arrangement, defect and strain, can be utilized to manipulate the quantum properties of this class of materials. Recent experiments of Bi 2 Se 3 /NbSe 2 heterostructures show signatures of strong Rashba band splitting due to the presence of a BiSe buffer layer, but the atomic level mechanism is not fully understood. We conduct first-principles studies of the Bi 2 Se3/BiSe/TMDC heterostructures with five different TMDC substrates (1T phase VSe 2 , MoSe 2 , TiSe 2 , and 2H phase NbSe 2 , MoSe 2 ). We find significant charge transfer at both BiSe/TMDC and Bi 2 Se 3 /BiSe interfaces driven by the work function difference, which stabilizes the BiSe layer as an electron donor and creates interface dipole. The electric field of the interface dipole breaks the inversion symmetry in the Bi 2 Se 3 layer, leading to the giant Rashba band splitting in two quintuple layers and the recovery of the Dirac point in three quintuple layers, with the latter otherwise only occurring in thicker samples with at least six Bi 2 Se 3 quintuple layers. Besides, we find that strain can significantly affect the charge transfer at the interfaces. Our study presents a promising avenue for tuning topological properties in heterostructures of two-dimensional materials, with potential applications in quantum devices.
Harnessing the photonic local density of states in graphene moiré superlattices
In this work we investigate the electromagnetic local density of states (LDOS) near a twisted bilayer graphene (TBG) deposited over a general isotropic substrate. The band structure of the TBG is calculated within a tight-binding framework, and then used to determine the TBG's conductivity. The latter presents a nontrivial dependence upon the angle of twist, which shows up in the LDOS, allowing for a moiré pattern-dependent quantum emission. For some specific twist angles we show that it is possible to either enhance or decrease the LDOS by an order of magnitude at selected frequencies when compared to the monolayer. Furthermore, this impressive variation is explained in terms of the presence/absence of well defined surface plasmon polaritons (SPPs). Altogether our findings demonstrate that TBG is an alternative, versatile material platform for controlling spontaneous emission and enhancing light-matter interactions, and pave the way for further studies and applications of quantum emission in the emerging class of two-dimensional moiré materials.
Manipulation of Hole Spin Transport in Germanium
Downscaling of the silicon metal-oxide-semiconductor field-effect transistor technology is expected to reach a fundamental limit soon. A paradigm shift in computing is occurring. Spin field-effect transistors are considered a candidate architecture for next-generation microelectronics. Being able to leverage the existing infrastructure for silicon, a spin field-effect transistor technology based on group IV heterostructures will have unparalleled technical and economical advantages. For the same material platform reason, germanium hole quantum dots are also considered a competitive architecture for semiconductor-based quantum technology. In this project, we investigated several approaches to creating hole devices in germanium-based materials as well as injecting hole spins in such structures. We also explored the roles of hole injection in wet chemical etching of germanium. Our main results include the demonstration of germanium metal-oxide-semiconductor field-effect transistors operated at cryogenic temperatures, ohmic current-voltage characteristics in germanium/silicon-germanium heterostructures with ferromagnetic contacts at deep cryogenic temperatures and high magnetic fields, evaluation of the effects of surface preparation on carrier mobility in germanium/silicon- germanium heterostructures, and hole spin polarization through integrated permanent magnets. These results serve as essential components for fabricating next-generation germanium-based devices for microelectronics and quantum systems.
Development of Quantum Interconnects (QuICs) for Next-Generation Information Technologies
Just as “classical” information technology rests on a foundation built of interconnected information-processing systems, quantum information technology (QIT) must do the same. A critical component of such systems is the “interconnect,” a device or process that allows transfer of information between disparate physical media, for example, semiconductor electronics, individual atoms, light pulses in optical fiber, or microwave fields. While interconnects have been well engineered for decades in the realm of classical information technology, quantum interconnects (QuICs) present special challenges, as they must allow the transfer of fragile quantum states between different physical parts or degrees of freedom of the system. The diversity of QIT platforms (superconducting, atomic, solid-state color center, optical, etc.) that will form a “quantum internet” poses additional challenges. As quantum systems scale to larger size, the quantum interconnect bottleneck is imminent, and is emerging as a grand challenge for QIT. For these reasons, it is the position of the community represented by participants of the NSF workshop on “Quantum Interconnects” that accelerating QuIC research is crucial for sustained development of a national quantum science and technology program. Given the diversity of QIT platforms, materials used, applications, and infrastructure required, a convergent research program including partnership between academia, industry, and national laboratories is required.
ReaxFF Reactive Force Field for Exploring Electronically Switchable Polarization in Zn 1– x Mg x O Ferroelectric Semiconductors
Cation misfit in traditional ferroelectric crystals offers a new material platform that can drive electronic components toward structural miniaturization and high-density integration, enabling deviation from von-Neumann architectures. Here, we explore ferroelectricity in Zn 1–x Mg x O, a nontraditional ferroelectric material with tunable properties. Using data from density-functional theory calculations, we have developed a ReaxFF reactive force field to explore the ferroelectric properties of Zn 1–x Mg x O and reveal the hysteresis behavior. We discover that ferroelectric switching can be observed at a critical thickness of 10 nm with a residual polarization of ~100 μC/cm 2 . Our analysis indicates that an increase in Mg-substitution correlates with a decrease in the coercive field. We also observe a strong temperature dependence of the coercive field in Zn 1–x Mg x O, with values decreasing as the temperature increases. Additionally, we find that the distribution of Mg atoms significantly impacts the coercive field, with a clustered distribution leading to a substantial increase. In particular, a decrease in coercive field values is observed when Mg atoms are randomly distributed, compared to uniform distribution. Furthermore, leveraging tunable hysteresis behavior offered by varied percentages and distribution of Mg-substitution provides valuable insights into the design of next-generation functional devices and will inspire further investigations.
Design of a Stable Heusler Alloy with Switchable Metal-to-Half-Metal Transition at Finite Temperature
We report the electronic structure and metallicity of Si-doped Mn2VGe Heusler alloys within the first-principles density-functional theory framework are discussed. Mn2VGe is found to assume two stable structures at (cubic) lattice constants of 5.7 and 6.05 Å, which are well-separated in energy and correspond to half-metallic (low-spin) and metallic (high-spin) phases, respectively. Substitution of Ge by Si reduces the energy difference between these two phases, which become nearly degenerate at an Si concentration of ≈3.125 at% at zero temperature. The analysis shows that the switching between the high- and low-spin phases for this composition can be triggered via a pressure of 2.8 GPa at 300 K. Si-doped Mn 2 VGe can thus provide an ultrafast, low power, cost-effective materials platform for spintronics applications.
High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback
Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.
Building Artificial Layered Solids from the Bottom-up: Materials by Design to Enable New Energy Technologies
This final technical report summarizes the key accomplishments on this DOE Early Career Program award received by PI Guihua Yu at the University of Texas at Austin. The main goal of this ECP award was to develop synthetic methodologies, self-assembly approaches towards structurally controlled nanosheets-like solids from the bottom up, and to understand and characterize their chemical/physical characteristics for the design of future-generation energy devices with novel functions and properties, that will have direct implications for energy science and technologies such as energy storage and conversion, and catalysis. The project accomplished these goals by completing the following objectives: • Rational design, synthesis, and self-assembly of structurally-controlled molecular ‘nanosheets’ materials. Moving beyond conventional van der Waals two-dimensional crystals, this project enables new synthesis and processing strategies to develop ultrathin nanosheets materials, from inorganic transition-metal oxides-based, to hybrid organic-inorganic nanomaterials, with structural factors such as facet, thickness and pore structure being well controlled during synthesis or assembly processes. • Fundamental understanding and electrochemical characterization of these assembled molecular ‘nanosheets’ materials via charge/mass transport studies through electrochemical intercalation of different metal ions for next-generation energy storage, as well as electrocatalytic studies using this new material platform for understanding catalytic reaction kinetics and the roles of surface functionalization and interface interactions owing to atomic thickness, nanoscale porosity, and other structural factors.
High-Throughput Automated Exploration of Phase Growth Behaviors in Quasi-2D Formamidinium Metal Halide Perovskites
Quasi-2D metal halide perovskites (MHPs) are an emerging material platform for sustainable functional optoelectronics, but the uncontrollable, broad phase distribution remains a critical challenge for applications. Nevertheless, the basic principles for controlling phases in quasi-2D MHPs remain poorly understood, due to the rapid crystallization kinetics during the conventional thin-film fabrication process. In this work, a high-throughput automated synthesis-characterization-analysis workflow is implemented to accelerate material exploration in formamidinium (FA)-based quasi-2D MHP compositional space, revealing the early-stage phase growth behaviors fundamentally determining the phase distributions. Upon comprehensive exploration with varying synthesis conditions including 2D:3D composition ratios, antisolvent injection rates, and temperatures in an automated synthesis-characterization platform, it is observed that the prominent n = 2 2D phase restricts the growth kinetics of 3D-like phases—α-FAPbI 3 MHPs with spacer-coordinated surface—across the MHP compositions. Thermal annealing is a critical step for proper phase growth, although it can lead to the emergence of unwanted local PbI 2 crystallites. Additionally, fundamental insights into the precursor chemistry associated with spacer-solvent interaction determining the quasi-2D MHP morphologies and microstructures are demonstrated. The high-throughput study provides comprehensive insights into the fundamental principles in quasi-2D MHP phase control, enabling new control of the functionalities in complex materials systems for sustainable device applications.
Primitive Cubic Cation-Disordered Niobium Tungsten Oxides
In recent years, metastable cation-disordered oxides have had a significant impact on both fundamental and application-driven materials science research. Along this direction, developing new and simple structural types that can accommodate cation disorder at the same crystallographic site has yet to receive extensive research focus. In this work, we use niobium tungsten oxides (NbWOs), a series of materials encompassing diverse structural features, as a material platform to explore new cation-disordered structural types. Relying on mechanochemistry, we realized primitive cubic cation-disordered NbWOs with a ReO 3 -type structure, featuring unique electronic and vibrational properties. Furthermore, when applied as a Li-ion battery anode, the materials undergo a unique perovskite-rock salt structural change mechanism, different from that of complex ordered NbWOs. All these advancements suggest a rich opportunity in developing other new material structural types and realizing new material properties based on the methodology of the work.
On-chip spectrometers using stratified waveguide filters
We present an ultra-compact single-shot spectrometer on silicon platform for sparse spectrum reconstruction. It consists of 32 stratified waveguide filters (SWFs) with diverse transmission spectra for sampling the unknown spectrum of the input signal and a specially designed ultra-compact structure for splitting the incident signal into those 32 filters with low power imbalance. Each SWF has a footprint less than 1 µm × 30,µm, while the 1 × 32 splitter and 32 filters in total occupy an area of about 35 µm × 260 µm, which to the best of our knowledge, is the smallest footprint spectrometer realized on silicon photonic platform. Experimental characteristics of the fabricated spectrometer demonstrate a broad operating bandwidth of 180 nm centered at 1550 nm and narrowband peaks with 0.45 nm Full-Width-Half-Maximum (FWHM) can be clearly resolved. This concept can also be implemented using other material platforms for operation in optical spectral bands of interest for various applications.
Nematicity and nematic fluctuations in iron-based superconductors
The reduction of rotational symmetry in a crystalline solid driven by an electronic mechanism is referred to as electronic nematicity. This phenomenon – initially thought to be rare – has by now been observed in an increasing number of systems. Here, the iron-based superconductors present an ideal material platform to study nematicity in crystalline solids. Their nematic transition is pronounced, it can be studied with a wide range of experimental techniques; it is easily tunable; and high-quality samples are widely available. As research on nematicity in iron-based materials is now in its second decade, it builds on tremendous progress in theoretical concepts and experimental techniques. Thus, a stage has been reached at which the nematic phase can be addressed with confidence in its full complexity, including momentum-, time- and material- dependence of the order parameter. Important open questions concern the mechanism by which nematicity affects superconducting pairing and normal-state properties, with a central role for the challenging issue of nematic quantum criticality.
Extreme In-Plane Thermal Conductivity Anisotropy in Titanium Trisulfide Caused by Heat-Carrying Optical Phonons
High in-plane anisotropies arise in layered materials with large structural difference along different in-plane directions. Here, we report an extreme case in layered TiS 3 , which features tightly bonded atomic chains along the b-axis direction, held together by weaker, interchain bonding along the a-axis direction. Experiments show thermal conductivity along the chain twice as high as between the chain, an in-plane anisotropy higher than any other layered materials measured to date. We found that in contrast to most other materials, optical phonons in TiS 3 conduct an unusually high portion of heat (up to 66% along the b-axis direction). The large dispersiveness of optical phonons along the chains, contrasted to many fewer dispersive optical phonons perpendicular to the chains, is the primary reason for the observed high anisotropy in thermal conductivity. The finding discovers materials with unusual thermal conduction mechanism, as well as provides new material platforms for potential heat-routing or heat-managing devices.
Entangled two-plasmon generation in carbon nanotubes and graphene-coated wires
Here, we investigate the two-plasmon spontaneous decay of a quantum emitter near single-walled carbon nanotubes (SWCNTs) and graphene-coated wires (GCWs). We demonstrate efficient, enhanced generation of two-plasmon entangled states in SWCNTs due to the strong coupling between tunable guided plasmons and the quantum emitter. We predict two-plasmon emission rates more than twelve orders of magnitude higher than in free space, with average lifetimes of a few dozen nanoseconds. Given their low dimensionality, these systems could be more efficient for generating and detecting entangled plasmons in comparison to extended graphene. Indeed, we achieve a tunable spectrum of emission in GCWs, where sharp resonances occur precisely at the plasmons' minimum excitation frequencies. We show that by changing the material properties of the GCW's dielectric core, one could tailor the dominant modes and frequencies of the emitted entangled plasmons while keeping the decay rate ten orders of magnitude higher than in free space. By unveiling the unique properties of two-plasmon spontaneous emission processes in the presence of low-dimensional carbon-based nanomaterials, our findings set the basis for a novel material platform with applications to on-chip quantum information technologies.
Magnetic flux distribution, quasiparticle spectroscopy, and quality factors in Nb films for superconducting qubits
Niobium is a practical material platform for superconducting microwave circuits; however, device-level performance can vary significantly depending on film growth and processing conditions. We compare three epitaxial Nb films grown on $c-$plane sapphire substrates under nominally identical conditions, except for the deposition temperature. To correlate internal quality factors, $Q_{\mathrm {i}}$, with material properties, we combine magneto-optical imaging of magnetic flux distribution with quasiparticle spectroscopy via measurements of the London penetration depth, $λ(T)$. In the low-$Q_{\mathrm i}$ film, there is a lesser ability to screen the magnetic field and an irregular temperature variation of $λ(T)$, implying the existence of localized in-gap states. High $Q_{\mathrm i}$ films show the opposite trend. We conclude that our measurements provide an efficient method for characterizing and optimizing superconducting films for quantum informatics applications.