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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

System Engineering of Photonic Systems for Space Application

The application of photonics in space systems requires tight integration with the spacecraft systems to ensure accurate operation. This requires some detailed and specific system engineering to properly incorporate the photonics into the spacecraft architecture and to guide the spacecraft architecture in supporting the photonics devices. Recent research in product focused, elegant system engineering has led to a system approach which provides a robust approach to this integration. Focusing on the mission application and the integration of the spacecraft system physics incorporation of the photonics can be efficiently and effectively accomplished. This requires a clear understanding of the driving physics properties of the photonics device to ensure proper integration with no unintended consequences. The driving physics considerations in terms of optical performance will be identified for their use in system integration. Keywords: System Engineering, Optical Transfer Function, Optical Physics, Photonics, Image Jitter, Launch Vehicle, System Integration, Organizational Interaction

Watson, Michael D.↗
DOE OSTI2024

Inverse design for waveguide dispersion with a differentiable mode solver

Inverse design of optical components based on adjoint sensitivity analysis has the potential to address the most challenging photonic engineering problems. However, existing inverse design tools based on finite-difference-time-domain (FDTD) models are poorly suited for optimizing waveguide modes for adiabatic transformation or perturbative coupling, which lies at the heart of many important photonic devices. Among these, dispersion engineering of optical waveguides is especially challenging in ultrafast and nonlinear optical applications involving broad optical bandwidths and frequency-dependent anisotropic dielectric material response. In this work, we develop gradient back-propagation through a general-purpose electromagnetic eigenmode solver and use it to demonstrate waveguide dispersion optimization for second harmonic generation with maximized phase-matching bandwidth. This optimization of three design parameters converges in eight steps, reducing the computational cost of optimization by ∼100x compared to exhaustive search and identifying new designs for broadband optical frequency doubling of laser sources in the 1.3–1.4 µm wavelength range. Furthermore, we demonstrate that the computational cost of gradient back-propagation is independent of the number of parameters, as required for optimization of complex geometries. This technique enables practical inverse design for a broad range of previously intractable photonic devices.

Gray, Dodd (ORCID:000000030469599X)↗
DOE OSTI2026

Dynamically reconfigurable topological routing in nonlinear photonic systems

The propagation path of topologically protected states is bound to the interface between regions with different topology, and as such, the functionality of linear photonic devices leveraging these states is fixed during fabrication. Here, we propose a mechanism for dynamic control over a driven dissipative system’s local topology, yielding reconfigurable topological interfaces and thus tunable paths for protected routing. We illustrate our approach in non-resonantly pumped polariton lattices, where the nonlinear interaction between the polaritons and the exciton reservoir due to non-resonant pumping can yield picosecond-scale changes in the propagation paths of the chiral edge states. To analytically confirm the numerically observed topological dynamics, we generalize the spectral localizer framework to non-linear non-Hermitian Chern materials and apply this framework to a continuous model of the polariton system based on a driven-dissipative Gross-Pitaevskii equation. In doing so, we show that the local changes in the polariton lattice’s topology are captured by a local Chern marker. Looking forward, we anticipate such reconfigurable topological routing will enable the realization of novel classes of topological photonic devices.

Wong, Stephan [Sandia National Laboratories (SNL-N↗
DOE OSTI2025

Lines of Bound States in the Continuum in Monodisperse Microsphere Structures

Incorporating epitaxially grown active semiconductor media into self-assembled microsphere crystals has remained a major challenge as the curved geometry of the spheres is incompatible with conventional planar growth and patterning techniques. As a result, active photonic devices based on such self-assembled structures, which have other desirable properties such as enabling the rapid assembly of large area systems, have been elusive. Here, we numerically demonstrate an alternative route to creating high-Q resonances in microsphere-based nanophotonic assemblies compatible with standard optical gain materials. We show that close-packed layers of monodisperse microspheres can exhibit symmetry bandgaps, regardless of their layer stacking order. Thus, this microsphere environment can be used to create lines of bound states in the continuum (BICs) of an embedded slab made of active material. Using a realistic ZnS@SiO 2 (core-shell) architecture and sphere diameters compatible with scalable colloidal assembly, we predict sharp spectral features in angle-resolved transmission that trace these lines of BICs and persist in the presence of some fabrication disorder. Altogether, in enabling the integration of unpatterned epitaxial gain slabs with large-area colloidal microsphere assemblies, this approach opens a practical path toward active, dynamically reconfigurable photonic devices that leverage BIC physics for narrow-linewidth lasing and enhanced light–matter interactions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Defect Engineering in Large‐Scale CVD‐Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, it is demonstrated that formation of negative boron vacancy defects, V B − , in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. Different defect types are identified by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons and emitting at 800 nm) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (N B V N ) and reveal the presence of additional “dark” paramagnetic defects that influence spin-lattice relaxation time (T 1 ) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices.

CVD↗
DOE OSTI2023

Proximity-induced chiral quantum light generation in strain-engineered WSe 2 /NiPS 3 heterostructures

Quantum light emitters capable of generating single photons with circular polarization and non-classical statistics could enable non-reciprocal single-photon devices and deterministic spin–photon interfaces for quantum networks. To date, the emission of such chiral quantum light relies on the application of intense external magnetic fields, electrical/optical injection of spin-polarized carriers/excitons or coupling with complex photonic metastructures. Here we report the creation of free-space chiral quantum light emitters via the nanoindentation of monolayer WSe 2 /NiPS 3 heterostructures at zero external magnetic field. These quantum light emitters emit with a high degree of circular polarization (0.89) and single-photon purity (95%), independent of pump laser polarization. In this study, scanning diamond nitrogen-vacancy microscopy and temperature-dependent magneto-photoluminescence studies reveal that the chiral quantum light emission arises from magnetic proximity interactions between localized excitons in the WSe 2 monolayer and the out-of-plane magnetization of defects in the antiferromagnetic order of NiPS 3 , both of which are co-localized by strain fields associated with the nanoscale indentations.

36 MATERIALS SCIENCE↗
NASA NTRS1999

Photonic Switching Devices Using Light Bullets

A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

Goorjian, Peter M.↗
DOE OSTI2023

Multi-objective, robust constraints enforced global topology optimizer for optical devices

A method for optimization of photonic devices is disclosed. The method includes receiving a set of unconstrained latent variables; mapping the set of unconstrained latent variables to a constrained space to generate a constrained device; calculating the permittivity across each element of the constrained device; determining a permittivity-constrained width gradient based at least partially on the permittivity across each element; and optimizing the set of unconstrained latent variables by at least partially using the permittivity-constrained width gradient.

Fan, Jonathan↗
DOE OSTI2026

Integrated-photonics-based systems for polarization-gradient cooling of trapped ions

Trapped ions are a promising modality for quantum systems, with demonstrated utility as the basis for quantum processors and optical clocks. However, traditional trapped-ion systems are implemented using complex free-space optical configurations, whose large size and susceptibility to vibrations and drift inhibit scaling to large numbers of qubits. In recent years, integrated-photonics-based systems have been demonstrated as an avenue to address the challenge of scaling trapped-ion systems while maintaining high fidelities. While these previous demonstrations have implemented both Doppler and resolved-sideband cooling of trapped ions, these cooling techniques are fundamentally limited in efficiency. In contrast, polarization-gradient cooling can enable faster and more power-efficient cooling and, therefore, improved computational efficiencies in trapped-ion systems. While free-space implementations of polarization-gradient cooling have demonstrated advantages over other cooling mechanisms, polarization-gradient cooling has never previously been implemented using integrated photonics. In this paper, we design and experimentally demonstrate key polarization-diverse integrated-photonics devices and utilize them to implement a variety of integrated-photonics-based polarization-gradient-cooling systems, culminating in the first experimental demonstration of polarization-gradient cooling of a trapped ion by an integrated-photonics-based system. By demonstrating polarization-gradient cooling using an integrated-photonics-based system and, in general, opening up the field of polarization-diverse integrated-photonics-based devices and systems for trapped ions, this work facilitates new capabilities for integrated-photonics-based trapped-ion platforms.

atom optics↗
DOE OSTI2023

Silicon-Lattice-Matched Boron-Doped Gallium Phosphide: A Scalable Acousto-Optic Platform

The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide bandgap, strong nonlinear properties, and large acousto-optic figure of merit. Here, this study demonstrates that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths, respectively. It further demonstrates the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional mapping, combined with ab initio calculations, indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Epitaxial hexagonal boron nitride with high quantum efficiency

Two-dimensional (2D) hexagonal boron nitride (h-BN) is one of the few materials showing great promise for light emission in the far ultraviolet (UV)-C wavelength, which is more effective and safer in containing the transmission of microbial diseases than traditional UV light. In this report, we observed that h-BN, despite having an indirect energy bandgap, exhibits a remarkably high room-temperature quantum efficiency (~60%), which is orders of magnitude higher than that of other indirect bandgap material, and is enabled by strong excitonic effects and efficient exciton-phonon interactions. This study offers a new approach for the design and development of far UV-C optoelectronic devices as well as quantum photonic devices employing 2D semiconductor active regions.

36 MATERIALS SCIENCE↗
NASA NTRS2007

Space Qualification Issues in Acousto-optic and Electro-optic Devices

Satellite and space-based applications of photonic devices and systems require operational reliability in the harsh environment of space for extended periods of time. This in turn requires every component of the systems and their packaging to meet space qualifications. Acousto- and electro-optical devices form the major components of many current space based optical systems, which is the focus of this paper. The major space qualification issues are related to: mechanical stability, thermal effects and operation of the devices in the naturally occurring space radiation environment. This paper will discuss acousto- and electro-optic materials and devices with respect to their stability against mechanical vibrations, thermal cycling in operating and non-operating conditions and device responses to space ionizing and displacement radiation effects. Selection of suitable materials and packaging to meet space qualification criteria will also be discussed. Finally, a general roadmap for production and testing of acousto- and electro-optic devices will be discussed.

Prasad, Narasimha S.↗
DOE OSTI2023

Neuromorphic Photonics Based on Phase Change Materials

Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (Ge 2 Sb 2 Te 5 ), GeTe-Sb 2 Te 3 , GSST (Ge 2 Sb 2 Se 4 Te 1 ), Sb 2 S 3 /Sb 2 Se 3 , Sc 0.2 Sb 2 Te 3 (SST), and In 2 Se 3 , highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss. By investigating the integration of different PCMs with silicon-based optoelectronics, this review aims to identify potential breakthroughs in computational performance and scalability of photonic spiking neural networks. Further research and development are essential to optimize these materials and overcome their limitations, paving the way for more efficient and high-performance photonic neuromorphic devices in artificial intelligence and high-performance computing applications.

36 MATERIALS SCIENCE↗
NASA NTRS2007

Advanced Optical Technologies for Space Exploration

NASA Langley Research Center is involved in the development of photonic devices and systems for space exploration missions. Photonic technologies of particular interest are those that can be utilized for in-space communication, remote sensing, guidance navigation and control, lunar descent and landing, and rendezvous and docking. NASA Langley has recently established a class-100 clean-room which serves as a Photonics Fabrication Facility for development of prototype optoelectronic devices for aerospace applications. In this paper we discuss our design, fabrication, and testing of novel active pixels, deformable mirrors, and liquid crystal spatial light modulators. Successful implementation of these intelligent optical devices and systems in space, requires careful consideration of temperature and space radiation effects in inorganic and electronic materials. Applications including high bandwidth inertial reference units, lightweight, high precision star trackers for guidance, navigation, and control, deformable mirrors, wavefront sensing, and beam steering technologies are discussed. In addition, experimental results are presented which characterize their performance in space exploration systems.

Clark, Natalie↗
DOE OSTI2025

Electrically Reconfigurable Liquid Metal Nanophotonic Platform for Color Display and Imaging

Dynamically tunable optical materials and device architectures are essential for future photonic technologies, yet conventional solid metals lack the intrinsic tunability required for advanced functionalities. Gallium-based liquid metals (LMs) present an appealing alternative thanks to their distinctive mechanical and optical properties; however, their practical integration in tunable photonic elements remains largely unexplored. Here, in this study, an electrochemically controlled nanophotonic platform is demonstrated that integrates a dynamically reconfigurable LM ground plane with gold nanoantenna arrays within a microfluidic system, enabling precise and reversible modulation of optical resonances across the visible to mid-infrared spectral ranges. By employing moderate operational voltages (1.5–3.0 V), real-time tuning of high-resolution structural color patterns is achieved through nanoscale control of the interfacial gap between the LM and Au nanoantennas. This innovative platform facilitates electrically programmable, high-contrast color patterns suitable for dynamic optical displays, secure anti-counterfeiting labels, and imaging applications. Additionally, this platform enables tunable mid-infrared spectral responses, which may be utilized for chemical and biological sensing applications. This versatile integrated LM-based nanophotonic platform opens new paths toward multifunctional, actively tunable/reconfigurable photonic device and system technologies.

Imaging↗
DOE OSTI2023

Plasmonic Terahertz Devices and Sensors Based on Carbon Electronics

Tunable terahertz (THz) photonic devices are imperative in a wide range of applications ranging from THz signal modulation to molecular sensing. One of the currently prevailing methods is based on arrays of metallic or dielectric resonators integrated with functional materials in response to an external stimulus, in which for the purpose of sensing the external stimuli may introduce inadvertent undesirable effects into the target samples to be measured. Here we developed an alternative approach by postprocessing nanothickness macro-assembled graphene (nMAG) films with widely tunable THz conductivity, enabling versatile solid-state THz devices and sensors, showing multifunctional nMAG-based applications. The THz conductivities of free-standing nMAGs showed a broad range from 1.2 x 10 3 S/m in reduced graphene oxide before annealing to 4.0 x 10 6 S/m in a nMAG film annealed at 2800 °C. We fabricated nMAG/dielectric/metal and nMAG/dielectric/nMAG THz Salisbury absorbers with broad reflectance ranging from 0% to 80%. The highly conductive nMAG films enabled THz metasurfaces for sensing applications. Taking advantage of the resonant field enhancement arising from the plasmonic metasurface structures and the strong interactions between analyte molecules and nMAG films, we have successfully detected diphenylamine with a limit of detection of 4.2 pg. Those wafer-scale nMAG films present promising potential in high-performance THz electronics, photonics, and sensors.

36 MATERIALS SCIENCE↗