Photosensitive barium titanate Schottky diodes.
Observation of photocurrents generated in Schottky barrier diodes on barium titanate, suggesting practical utility of photon-to-electron conversion efficiencies
Sawyer, D. E.↗
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A Monte Carlo photocurrent/photoemission computer program
A Monte Carlo computer program was developed for the computation of photocurrents and photoemission in gamma (X-ray)-irradiated materials. The program was used for computation of radiation-induced surface currents on space vehicles and the computation of radiation-induced space charge environments within space vehicles.
Chadsey, W. L.↗
Photoemf in cadmium sulfide
Theoretical and experimental investigations on CdS single crystals and CuxS:CdS photovoltaic cells prepared from CdS single crystals by a chemical-dip procedure are described. The studies are aimed at clarifying cell mechanisms which affect key cell properties (efficiency, reliability, and lifetime) by examining the properties of intrinsic and extrinsic defects in the junction and surface regions and their effects on carrier transport through these regions. The experimental research described includes studies of thermal, infrared, and field quenching of acceptor-doped CdS crystals; investigation of optical and electrical properties of CuxS:CdS photovoltaic cells (current-voltage characteristics, spectral distribution of photocurrent and photovoltage) and the dependence of these properties on temperature and light intensity; measurement of changes, as a result of heat treatment in ultrahigh vacuum, in the spectral distribution of photoconductivity at room temperature and liquid nitrogen temperature, the luminescence spectrum at liquid nitrogen temperature, and the thermally stimulated current curves of CdS crystals; determination of the effect of irradiation with 150 keV (maximum) X-rays on the spectral distribution of photoconductivity and thermally-stimulated current of CdS crystals; and studies of the effect of growth conditions on the photoconductive properties of CdS crystals.
Boeer, K. W.↗
Fine structure in the optical-absorption edge of silicon.
Investigation of the dependence of the photocurrent generated in silicon p-n junctions on the energy of the incident photons to obtain details concerning the fine structure in the indirect optical-absorption edge of silicon. It is found that at room temperature there are three prominent thresholds in the absorption tail. The first, which is not too well defined, occurs at 0.91 eV, the second at 0.99 eV, and the third at 1.026 eV. The dependence of the absorption coefficient on the photon energy following the latter two thresholds is found to differ from that found by Mcfarlane et al. (1958). The threshold energies and temperature dependence of the absorption coefficient suggest that two- and three-phonon processes give rise to the absorption tail. In the transverse-optical phonon-absorption region more structure is found in the absorption coefficient than is accounted for by the theory.
Anagnostopoulos, C.↗
Electromagnetic radiation screening of microcircuits for long life applications
The utility of X-rays as a stimulus for screening high reliability semiconductor microcircuits was studied. The theory of the interaction of X-rays with semiconductor materials and devices was considered. Experimental measurements of photovoltages, photocurrents, and effects on specified parameters were made on discrete devices and on microcircuits. The test specimens included discrete devices with certain types of identified flaws and symptoms of flaws, and microcircuits exhibiting deviant electrical behavior. With a necessarily limited sample of test specimens, no useful correlation could be found between the X-ray-induced electrical response and the known or suspected presence of flaws.
Brammer, W. G.↗
Design considerations in the creation and maintenance of electrostatic cleanliness for solar electrically propelled spacecraft
Charge build-up on spacecraft surfaces and resulting zones of electrostatic contamination have been examined for electrically active and electrically passive spacecraft with both conducting and dielectric surface materials, illuminated and nonilluminated surface conditions, and for both inclusion and neglect of free charge effects from photocurrents and ambient space plasma particles. Techniques for measurement and reduction of electrostatic contamination zone extent have been developed for spacecraft with charge release capability. Indicated limitations for contamination cleanup are about 1 volt potential variation from spacecraft to ambient plasma. Bandwidths of electrostatic monitoring and clamping devices extend to several hundred kilohertz for both DC and 'broadband' AC electrostatic cleanliness.
Sellen, J. M., Jr.↗
On the determination of series resistance and diode quality factor of solar cells
The series resistance and diode quality factor are used for evaluation of solar cell performance. These parameters are normally deduced from the terminal I-V characteristics under forward bias. The method produces a smaller series resistance and a larger value for diode quality factor than appropriate for the device when operating as a solar cell. It is suggested that the diode quality factor be determined from measured saturated photocurrent, open circuit voltage characteristics and the series resistance be measured with an r-f bridge or calculated from a measurement of the surface sheet resistance.
Anderson, R. L.↗
Pioneer Venus spacecraft charging model
Five environmental models were constructed to represent the solar wind and the upper, middle, and lower ionosphere of Venus. The spacecraft structure was modeled with over 140 passive electrical elements representing structural elements of the spacecraft. Electron, ion, secondary electron, and photocurrents to the spacecraft from the plasma were calculated, ignoring sheath effects. In all but one case, potentials of interest were less than 1 volt. Potential differences between widely separated points on the equipment shelf were less than 1 mV. The one area of concern is the solar panel potential when the orbiter is passing through the bowshock region.
Robinson, P. A., Jr.↗
Photoelectrolysis of water at high current density - Use of ultraviolet laser excitation
The behavior of TiO2 and SrTiO3 photoanodes in cells for the photoelectrolysis of H2O has been investigated for high-intensity 351-,364-nm excitation from an Ar ion laser. Intensities up to 380 W/sq cm have been used. For TiO2 a small amount of surface decomposition is found after irradiation at high intensity, whereas SrTiO3 undergoes no detectable changes. Current-voltage properties for both electrodes are essentially independent of light intensity up to the level of 380 W/sq cm, and there is little if any change in quantum efficiency for electron flow. Photocurrent densities have been shown to exceed 5 A/sq cm for O2 evolution. Data show that the energy storage rate associated with the SrTiO3 photoelectrolysis can exceed 30 W/sq cm; this represents the highest demonstrated rate of sustained optical-to-chemical energy conversion.
Bocarsly, A. B.↗
Passive imaging through the turbulent atmosphere - Fundamental limits on the spatial frequency resolution of a rotational shearing interferometer
The signal-to-noise (S/N) ratio to be expected when a 180 deg rotationally shearing interferometer is used for image recovery at the diffraction limit of a large telescope is computed. The variance and covariance of the irradiance fluctuations at the detector array are shown to yield measures of the high-frequency spatial spectrum of the source. Four fundamental sources of noise are considered: temporal fluctuations of the source, space-time fluctuations of the atmosphere, shot noise in the detected photocurrents, and the effects of finite sampling. S/N is found to be directly proportional to the angular resolution of the telescope, the single-frame integration time, the square root of the number of frames, the cube of the operating wavelength, the quantum efficiency of the detector, and the average spectral irradiance from the source on the pupil. It is inversely proportional to the cube of the field angle subtended by the source (or part thereof) under study.
Burke, J. J.↗
Application of the superposition principle to solar-cell analysis
The superposition principle of differential-equation theory - which applies if and only if the relevant boundary-value problems are linear - is used to derive the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Analytical methods are presented to treat cases where shifting is not strictly valid. Well-defined conditions necessary for superposition to apply are established. For high injection in the base region, the method of analysis accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).
Lindholm, F. A.↗
Optical communication with two-photon coherent states. II - Photoemissive detection and structured receiver performance
In a previous paper (1978), the authors developed a method of analyzing the performance of two-photon coherent state (TCS) systems for free-space optical communications. General theorems permitting application of classical point process results to detection and estimation of signals in arbitrary quantum states were derived. The present paper examines the general problem of photoemissive detection statistics. On the basis of the photocounting theory of Kelley and Kleiner (1964) it is shown that for arbitrary pure state illumination, the resulting photocurrent is in general a self-exciting point process. The photocount statistics for first-order coherent fields reduce to those of a special class of Markov birth processes, which the authors term single-mode birth processes. These general results are applied to the structure of TCS radiation, and it is shown that the use of TCS radiation with direct or heterodyne detection results in minimal performance increments over comparable coherent-state systems. However, significant performance advantages are offered by use of TCS radiation with homodyne detection. The abstract quantum descriptions of homodyne and heterodyne detection are derived and a synthesis procedure for obtaining quantum measurements described by arbitrary TCS is given.
Shapiro, J. H.↗
Internal photoemission in Ag-Al2O3-Al junctions
The magnitude of the photon-induced current in Ag-Al2O3-Al metal-oxide-metal junctions has been studied as a function of photon energy and angle of incident radiation. Photocurrents were theoretically analyzed on the basis of a modified vacuum photoemission model (Jain, 1975; Slayman et al., to be published). Optical constants previously reported in the literature (Irani et al., 1971; Ehnrereich et al., 1963) were used to calculate the true spatial generation rate in Ag and Al as a function of the angle, polarization of incident radiation, and film thickness. Results were found to be in very good agreement with experimentally determined values for a tunable dye laser with a KDP doubling crystal pumped by a Q-switched Nd:YAG laser with a LiIO3 doubling crystal. The system provided risetimes of 50 ns or less and peak powers of 10 W. Under short circuit conditions, the photoresponse to incident power was linear up to available power densities of 10 kW/sq cm. Quantum efficiencies of about 0.1% at zero-bias, near 3.8 eV under P polarization, were typically observed.
Guedes, J. M. P.↗
Photoelectrochemical response of some layered chalcogenophosphate compounds /MPX3/
New photoelectrochemical results for the layered chalcogenophosphate compounds MPX3, FePS3, NiPS3, and SnPS3 are presented. The compounds were grown by iodine vapor transport in quartz ampules from a stoichiometric amount of the elements. Crystals of the layered type up to 10 mm x 10 mm x 0.1 mm were grown. The results of the layered compounds from the MPX3 series show good stability in acid solutions under photoelectrolysis condition. The relatively slow increase in the photocurrent with increasing electrode potential suggests high recombination rates for the photogenerated carriers in these layered materials. It is noted that improvements may be possible by, for example, optimizing the preparation of the crystals and the electrode surfaces.
Byvik, C. E.↗
Measuring Excess Noise in SDL's
New instrument gives quantitive information on "excess noise" in semiconductor-diode laser (SDL's). By proper selection of detector, instrument tests any SDL from visible wavelengths through thermal infrared. Lasers determine excess noise in SKL source by measuring photocurrent generated in photodetector exposed first to reference laser then to SKL under test.
Katzberg, S. J.↗
Study of the photovoltaic effect in thin film barium titanate
The basic mechanism associated with the photovoltaic phenomena observed in the R.F. sputtered BaTiO3/silicon system is presented. Series of measurements of short circuit photocurrents and open circuit photovoltage were made. The composition depth profiles and the interface characteristics of the BaTiO3/silicon system were investigated for a better understanding of the electronic properties. A Scanning Auger Microprobe combined with ion in depth profiling were used.
Grannemann, W. W.↗
Minority carrier diffusion length measurements - A review and comparison of techniques
A review of the major techniques for measuring minority carrier diffusion lengths in solar cells is given. Limits of applicability are indicated for each method, as relevant to indirect bandgap materials such as silicon, and direct bandgap materials like gallium arsenide. A discussion and bibliography is presented for the following techniques: uniform generation, electron beam induced current, Schottky barrier (and other steady-state) photocurrent, surface photovoltage, transient decay, and luminescence.
Khan, A. A.↗
Solar cells of metal-free phthalocyanine dispersed in polyvinyl carbazole. 1: Effects of the recrystallization of H2PC on cell characteristics
The development of an organic semiconductor solar cell and the effects of the recrystallization of metal free phthalocyanine (H2PC) on the characteristics of NESA/H2PC-PVK/Au sandwich cells were investigated. Alfa-H2PC sandwich cells showed photovoltage and photocurrent in a two direction opposite to that shown y as supplied H2PC cells, which consists mainly of beta-H2PC. Some difference was observed in the response times of the two cells. It is suggested that photocharacteristics change with the specific resistance of the H2PC, which is related to its crystal forms. In the cells with low resistance H2PC carriers are generated in H2PC by illumination, while in high resistance H2PC cells, carriers are generated in PVK which is sensitized with H2PC.
Shimura, M.↗