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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

An airborne short wave infrared /SWIR/ pushbroom imaging system using a 64-element PbS detector array

Research evidence indicates that data in the short wave infrared (SWIR) spectral region will greatly improve the information content of remotely sensed data. Bands are required in the 1.55-1.75 micron and 2.08-2.35 micron spectral regions for a variety of agricultural and geological investigations. It is anticipated that future Landsat sensors will use pushbroom linear array technology to obtain high resolution, improved sensitivity and increased system reliability. To obtain early laboratory and field data, an airborne pushbroom image system has been designed for operation in the short wave infrared spectral region. The system uses a 64-element staggered PbS array and is operated at 195 K; the instrument has been designed to operate in an aircraft and will view a 19 degree swath width with a 5.8 mrad IFOV. The spectral bandwidth of each channel is .05 micron and the noise equivalent reflectivity in the order of .2% is provided. The requirements for more advanced detector arrays for use in future NASA spacecraft remote sensing instruments are also discussed.

Husain-Abidi, A. S.↗
NASA NTRS1983

Fundamental linewidth in solitary, ultranarrow output PbS(1-x)Se(x) diode lasers

The fundamental, quantum phase noise limited Lorentzian linewidth was directly measured from the beat-note spectra generated by heterodyning PbS(1-x)Se(x) diode lasers with a stable CO gas laser. The experimental results were matched by calculated theoretical line profiles. Linewidths as narrow as 22 kHz full width at half-maximum power were observed.

Freed, C.↗
DOE OSTI2020

Materials Data on Ni3(PbS)2 by Materials Project

Ni3Pb2S2 crystallizes in the trigonal R-3m space group. The structure is three-dimensional. Ni is bonded in a distorted linear geometry to four Pb and two equivalent S atoms. There are two shorter (2.82 Å) and two longer (2.84 Å) Ni–Pb bond lengths. Both Ni–S bond lengths are 2.18 Å. There are two inequivalent Pb sites. In the first Pb site, Pb is bonded in a hexagonal planar geometry to six equivalent Ni atoms. In the second Pb site, Pb is bonded to six equivalent Ni and two equivalent S atoms to form corner-sharing PbNi6S2 hexagonal bipyramids. Both Pb–S bond lengths are 3.16 Å. S is bonded in a 3-coordinate geometry to three equivalent Ni and one Pb atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ni3(PbS)2 by Materials Project

Ni3Pb2S2 crystallizes in the cubic I2_13 space group. The structure is three-dimensional. Ni is bonded in a distorted linear geometry to four equivalent Pb and two equivalent S atoms. There are two shorter (2.85 Å) and two longer (2.91 Å) Ni–Pb bond lengths. Both Ni–S bond lengths are 2.16 Å. Pb is bonded in a 7-coordinate geometry to six equivalent Ni and one S atom. The Pb–S bond length is 3.17 Å. S is bonded in a 3-coordinate geometry to three equivalent Ni and one Pb atom.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Combining Clinical and Dosimetric Features in a PBS Proton Therapy Cohort to Develop a NTCP Model for Radiation-Induced Optic Neuropathy

Radiation-induced optic neuropathy (RION) is a rare, yet severe complication following radiation therapy for brain, head and neck, or skull-base tumors. Although several risk factors, such as age, metabolic syndrome, and delivered dose, have been identified, we aimed at expanding the understanding of the mechanisms of interplay regarding dosimetry and patient variables leading to the onset of RION with a focus on proton therapy.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
NASA NTRS1987

Method of fabricating a PbS-PbSe IR detector array

A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chiping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

Barrett, John R.↗
NASA NTRS1986

PbS-PbSe IR detector arrays

A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chipping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

Barrett, John R.↗