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Abstract Structured light beams offer promising properties for a variety of applications, but the generation of broadband structured light remains a challenge. New opportunities are emerging in the terahertz frequency range owing to recent progress in light-driven ultrafast vectorial currents through spatially patterning spintronic and optoelectronic systems.
Protection of free-electron sources has been technically challenging due to lack of materials that transmit electrons while preventing corrosive gas molecules. Two-dimensional materials uniquely possess both of required properties. Here, we report three orders of magnitude increase in active pressure and factor of two enhancement in the lifetime of high quantum efficiency (QE) bialkali photocathodes (cesium potassium antimonide (CsK 2 Sb)) by encapsulating them in graphene and thin nickel (Ni) film. The photoelectrons were extracted through the graphene protection layer in a reflection mode, and we achieved QE of ~ 0.17% at ~ 3.4 eV, 1/e lifetime of 188 h with average current of 8.6 nA under continuous illumination, and no decrease of QE at the pressure of as high as ~ 1 × 10 –3 Pa. In comparison, the QE decreased drastically at 10 –6 Pa for bare, non-protected CsK 2 Sb photocathodes and their 1/e lifetime under continuous illumination was ~ 48 h. We attributed the improvements to the gas impermeability and photoelectron transparency of graphene.
GaN is rapidly gaining attention for implementation in power electronics but is still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance and reliability. Here, we discuss a novel implementation of photoluminescence (PL) imaging to study TDs in regions within vertically structured p-i-n GaN (PIN) diodes consisting of metalorganic chemical vapor deposition (MOCVD) epitaxial layers grown on ammonothermal GaN (am-GaN) substrates. PL imaging with a sub-bandgap excitation energy (3.1 eV) reveals TDs with excellent clarity in three dimensions within the am-GaN substrate. Galvanometric-driven PL imaging allows the microstructure of hundreds of devices to be characterized in a single session, enhancing the screening process through the addition of device specific TD location tracking and density mapping. The visibility, structural characteristics, luminescent nature and evolution of TDs through the GaN growth process are described, potentially providing the ability to define TD structures associated with leakage current.
Half-metallic Heusler alloys have been intensively studied in recent years due to their potential applications in spin-based devices, e.g., in magnetic tunnel junctions. Yet, their properties may be very sensitive to the choice of the substrates, i.e., to the epitaxial strain and interface properties. Here, we report the results of our computational work on the half-Heusler compound CrMnSb (1–x) P x . In particular, we demonstrate that the parent compound CrMnSb is close to a half-metallic material at the optimized lattice parameter, with the onset of the half-metallic bandgap a few meV above the Fermi energy. Moreover, although it undergoes a half-metallic transition under a uniform compression of ~1.5%, such a transition is absent under epitaxial strain. At the same time, we show that a half-metallic transition could be induced by a chemical substitution of Sb with P, which results in a volume reduction of the unit cell. In particular, 50% substitution of Sb with P leads to a robust half-metallicity in CrMnSb (1–x) P x , with 100% spin polarization being retained at a large range of epitaxial strain. Furthermore, our results indicate that CrMnSb0.5P0.5 could be grown on different types of substrates, e.g., GaAs, without its electronic properties being detrimentally affected by biaxial strain. In addition, CrMnSb 0.5 P 0.5 exhibits a fully compensated ferrimagnetic alignment, which could be potentially useful in applications where stray magnetic fields are undesirable.
We report on the development of the first-ever inorganic radiation-hard moisture-insensitive large volume spectroscopic semiconductor-based scintillator with less than 2 ns decay time and light yields as high as 8000 ph/MeV. Despite extensive research into scintillator materials, the quest for an ideal scintillator combining ultrafast decay times (akin to BaF 2 and Yb-doped scintillators such as Lu 2 O 3 :Yb), high light yields (exceeding 2000 photons per MeV), spectroscopic capabilities, and exceptional radiation hardness remain unfulfilled. In this study, we demonstrate and report for the first time the viability of large-volume (up to 20 mm thickness) gallium oxide (β-Ga 2 O 3 ) semiconductor-based scintillators for applications requiring these properties. These β-Ga 2 O 3 scintillators were grown using the fast turnaround (~2 days) crucible-free optical float zone (FZ) technique. The high light yield and ultrafast decay time of these high-purity n-type semiconductors with free carrier concentration of 6 × 10 17 cm –3 are attributed to native defects, specifically oxygen vacancies (V O ) and gallium–oxygen vacancy pairs (V Ga –V O ), generated during optimized FZ growth. The ultrafast decay, along with high light yield, enables excellent timing resolution and high count rate detection for applications like time-of-flight positron emission tomography, physics experiments, and nuclear safety. The radiation hardness of these devices has been documented in a separate publication.
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In this article, the brightness of electron beams emitted from photocathode sources plays a critical role in determining the performance of x-ray free-electron lasers and ultrafast electron-diffraction applications. In order to achieve the maximum brightness, the electrons need to be emitted from a photocathode with the lowest-possible mean transverse energy (MTE). Recent investigations have shown that capping a Cu(110) photocathode with a monolayer of graphene can protect the quantum efficiency (QE) from long-term exposure to varying vacuum conditions. However, there have been no studies that investigate the effects that a monolayer of graphene has on the MTE. Here, we report on measurements of a graphene-coated Cu(110) single crystal near the photoemission threshold for room and liquid-nitrogen temperatures. At room temperature, a minimum MTE of 25 meV is measured at 295 nm. At liquid-nitrogen temperatures, a minimum MTE of 9 meV is measured at the photoemission threshold of 290 nm.
The electron emission properties of a single-crystal nitrogen-doped diamond(001) photocathode inserted in a 10 kV DC photoelectron gun are determined using a tunable (235–410 nm) ultraviolet laser radiation source for photoemission from both the back nitrogen-doped substrate face and the front homoepitaxially grown and undoped diamond crystal face. Here, the measured spectral trends of the mean transverse energy and quantum efficiency of the emitted electrons are both anomalous and nonmonotonic, but are shown to be consistent with (i) the known physics of electron photoexcitation from the nitrogen substitution states into the conduction bands of diamond, (ii) the energy position and dispersion characteristics of the conduction bands of diamond in the (001) emission direction, (iii) the effective electron affinity of the crystal faces, (iv) the strong electron-(optical)phonon coupling in diamond, and (v) the associated hot electron transport dynamics under energy equipartition with the optical phonons. Notably, the observed hot electron emission is shown to be restricted parallel to the photocathode surface by the low transverse effective masses of the emitting band states—a transverse momentum filtering effect.
The 244 Pu (50 Ti ,𝑥𝑛) 294−𝑥 Lv reaction was investigated at Lawrence Berkeley National Laboratory’s 88-Inch Cyclotron. The experiment was aimed at the production of a superheavy element with 𝑍 ≥114 by irradiating an actinide target with a beam heavier than 48 Ca. Produced Lv ions were separated from the unwanted beam and nuclear reaction products using the Berkeley Gas-filled Separator and implanted into a newly commissioned focal-plane detector system. Two decay chains were observed and assigned to the decay of 290 Lv . The production cross section was measured to be 𝜎 prod = 0.44($^{+0.58}_{−0.28}$) pb at a center-of-target center-of-mass energy of 220(3) MeV. Furthermore, this represents the first published measurement of the production of a superheavy element near the “island of stability,” with a beam of 50 Ti and is an essential precursor in the pursuit of searching for new elements beyond 𝑍 =118.
The performance and cost of Bi-2212/Ag wire is limited by the large fraction of Ag matrix (~3:1) that is required in the oxide-powder-in-tube fabrication process. An alternative fabrication process is being developed in which fine-powder Bi-2212 is uniaxially compressed to form bars with a thin Ag foil sheath. The fine powder naturally textures (aligns the a-b planes perpendicular to the direction of compaction) with texture >80% using 200 MPa compression. A billet is formed by stacking trapezoidal- cross-section bars in a symmetric 8-12-16 pattern around an Ag rod and enclosed in an Ag-wall extrusion can. Here, the billet is extruded and drawn to fine wire. Results are presented on present status of the development and testing.
With the standard material and cavity production guidelines, the properties and performance of industrially produced high-purity niobium superconducting radiofrequency (SRF) cavities are unpredictably variable. Currently, assembled niobium SRF cavities undergo post-purification vacuum heat treatment at 800 °C for three hours to remove hydrogen and increase performance; however, recent work has shown significant improvements in cavity performance when annealed between 900–1000 °C, causing recrystallization (Rx). Increasing the annealing temperature and/or the heating rate should facilitate the onset of Rx, resulting in a greater reduction in the density of geometrically necessary dislocations (GNDs) that are strongly associated with the degradation of cavity performance via trapped magnetic flux. Improving the SRF community's understanding of the influence of both heat treatment and deformation history on the resulting microstructure and Rx behavior in high-purity niobium is needed. This fundamental metallurgy is critical for identifying improved specifications for the consistent production of high-performing niobium SRF cavities. This research investigates variations in deformation paths, heating rates, and annealing temperatures on Rx of deformed samples of polycrystalline high-purity niobium. To assess the effects of strain path, samples were cold-rolled to ~30% reduction prior to annealing, with half of the sample set rolled parallel to the as-received niobium sheet and the other half in the transverse direction.
This work characterizes the bulk emission properties of carbon nanotube (CNT) forest cathodes fabricated with various geometries. Geometries explored include dense nanotube forests of varying height grown on 5×5 mm silicon (Si) substrates and discrete, patterned CNT pillars fabricated using UV photolithography. Dense forests heights ranged from 526 μ m to 1.41 mm, with packing fraction for dense forest calculated to be 4e10 nanotubes/cm2 based on an average nanotube separation distance of 100 nm for fixed growth dense forests. Patterned sample micro pillar heights ranged from 47 to 393 μ m with pillar widths on tested samples ranging from 250 to 270 μ m . Properties explored include emission current, turn-on field, and emission current performance over time. A parallel plate electron beam diode with a 100- μ m A-K gap and an automated test apparatus were developed to provide a configurable experiment that provides accurate and repeatable measurements for dc, dc sweep, and timed performance testing. Operating voltages for the voltage sweeps spanned from 0 to −350 V. Furthermore, testing has shown evidence of a hysteresis effect on the emission current tied to the applied field history as well as shifting of the turn-on field magnitude throughout the testing period, suggesting a conditioning effect during use. Three separate emission regions in the I–V curves during sweep testing have also been observed. In the geometric study, dense forests and patterned samples were sweep tested up to a peak applied voltage of −250 V, with the taller samples generally performing better. Currents produced in the geometric study from the dense forest emitters ranged from 36.8 to 572.34 μ A , with current densities ranging from 15 to 2.29 mA/cm2. Currents produced from the patterned micropillar emitters ranged from 39.4 to 317.51 μ A , with current densities ranging from 67 to 3 mA/cm2. DC time testing s...
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ATC has successfully developed a new method for making high-performance Bi-2212/Ag su-perconducting wire with a favorable local area ratio (LAR)=Ag:Bi-2212. The method begins by texturing a fine powder of Bi-2212: the powder is loaded uniformly into an open-sided silver foil channel, the flaps of foil are folded over the powder filling, and the package is hydraulically com-pressed in a die set to form a textured-powder (TP) bar. XRD analysis of the interior powder in a compressed bar shows a texture of 80% after 200 MPa compression.
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LANSCE is primarily focused on three science questions for NNSA and contributes to several other programs. We will primarily consider the NNSA questions: (1) How can we advance our understanding of dynamic material behavior using focused experiments? (2) What tools are needed to address Advanced Manufacturing and Aging? (3) How do we constrain the nuclear reaction networks involved in weapons?
Within the framework of the Neutron Target Demonstrator about 1 m 3 of reactor grade graphite is available at LANSCE. In order to evaluate its suitability as a moderator, knowledge about the exact density is important, since it strongly affects the average time neutrons spend in the volume. The graphite is available in different shapes. A brief analysis was done on three different carbon blocks to determine the density of the material as well as the uncertainty in that measurement.