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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

NASA Tech Briefs, February 2007

Topics covered include: Calibration Test Set for a Phase-Comparison Digital Tracker; Wireless Acoustic Measurement System; Spiral Orbit Tribometer; Arrays of Miniature Microphones for Aeroacoustic Testing; Predicting Rocket or Jet Noise in Real Time; Computational Workbench for Multibody Dynamics; High-Power, High-Efficiency Ka-Band Space Traveling-Wave Tube; Gratings and Random Reflectors for Near-Infrared PIN Diodes; Optically Transparent Split-Ring Antennas for 1 to 10 GHz; Ice-Penetrating Robot for Scientific Exploration; Power-Amplifier Module for 145 to 165 GHz; Aerial Videography From Locally Launched Rockets; SiC Multi-Chip Power Modules as Power-System Building Blocks; Automated Design of Restraint Layer of an Inflatable Vessel; TMS for Instantiating a Knowledge Base With Incomplete Data; Simulating Flights of Future Launch Vehicles and Spacecraft; Control Code for Bearingless Switched- Reluctance Motor; Machine Aided Indexing and the NASA Thesaurus; Arbitrating Control of Control and Display Units; Web-Based Software for Managing Research; Driver Code for Adaptive Optics; Ceramic Paste for Patching High-Temperature Insulation; Fabrication of Polyimide-Matrix/Carbon and Boron-Fiber Tape; Protective Skins for Aerogel Monoliths; Code Assesses Risks Posed by Meteoroids and Orbital Debris; Asymmetric Bulkheads for Cylindrical Pressure Vessels; Self-Regulating Water-Separator System for Fuel Cells; Self-Advancing Step-Tap Drills; Array of Bolometers for Submillimeter- Wavelength Operation; Delta-Doped CCDs as Detector Arrays in Mass Spectrometers; Arrays of Bundles of Carbon Nanotubes as Field Emitters; Staggering Inflation To Stabilize Attitude of a Solar Sail; and Bare Conductive Tether for Decelerating a Spacecraft.

Source record↗

Single-Pole Double-Throw MMIC Switches for a Microwave Radiometer

In order to reduce the effect of gain and noise instabilities in the RF chain of a microwave radiometer, a Dicke radiometer topology is often used, as in the case of the proposed surface water and ocean topography (SWOT) radiometer instrument. For this topology, a single-pole double-throw (SPDT) microwave switch is needed, which must have low insertion loss at the radiometer channel frequencies to minimize the overall receiver noise figure. Total power radiometers are limited in accuracy due to the continuous variation in gain of the receiver. High-frequency SPDT switches were developed in the form of monolithic microwave integrated circuits (MMICs) using 75 micron indium phosphide (InP) PIN-diode technology. These switches can be easily integrated into Dicke switched radiometers that utilize microstrip technology.

Montes, Oliver↗

A Three-Frequency Feed for Millimeter-Wave Radiometry

A three-frequency millimeter-wave feed horn was developed as part of an advanced component technology task that provides components necessary for higher-frequency radiometers to meet the needs of the Surface Water and Ocean Topography (SWOT) mission. The primary objectives of SWOT are to characterize ocean sub-mesoscale processes on 10-km and larger scales in the global oceans, and to measure the global water storage in inland surface water bodies, including rivers, lakes, reservoirs, and wetlands. In this innovation, the feed provides three separate output ports in the 87-to- 97-GHz, 125-to-135-GHz, and 161-to-183- GHz bands; WR10 for the 90-GHz channel, WR8 for the 130-GHz channel, and WR5 for the 170-GHz channel. These ports are in turn connected to individual radiometer channels that will also demonstrate component technology including new PIN-diode switches and noise diodes for internal calibration integrated into each radiometer front end. For this application, a prime focus feed is required with an edge taper of approximately 20 dB at an illumination angle of 40 deg. A single polarization is provided in each band. Preliminary requirements called for a return loss of better than 15 dB, which is achieved across all three bands. Good pattern symmetry is also obtained throughout all three-frequency bands. This three-frequency broadband millimeter-wave feed also minimizes mass and provides a common focal point for all three millimeter-wave bands.

Hoppe, Daniel J.↗

Motorized Beam Alignment of a Commercial X-ray Diffractometer

X-ray diffraction (XRD) is a powerful analysis method that allows researchers to noninvasively probe the crystalline structure of a material. This includes the ability to determine the crystalline phases present, quantify surface residual stresses, and measure the distribution of crystallographic orientations. The Structures and Materials Division at the NASA Glenn Research Center (GRC) heavily uses the on-site XRD lab to characterize advanced metal alloys, ceramics, and polymers. One of the x-ray diffractometers in the XRD lab (Bruker D8 Discover) uses three different x-ray tubes (Cu, Cr, and Mn) for optimal performance over numerous material types and various experimental techniques. This requires that the tubes be switched out and aligned between experiments. This alignment maximizes the x-ray tube s output through an iterative process involving four set screws. However, the output of the x-ray tube cannot be monitored during the adjustment process due to standard radiation safety engineering controls that prevent exposure to the x-ray beam when the diffractometer doors are open. Therefore, the adjustment process is a very tedious series of blind adjustments, each followed by measurement of the output beam using a PIN diode after the enclosure doors are shut. This process can take up to 4 hr to perform. This technical memorandum documents an in-house project to motorize this alignment process. Unlike a human, motors are not harmed by x-ray radiation of the energy range used in this instrument. Therefore, using motors to adjust the set screws will allow the researcher to monitor the x-ray tube s output while making interactive adjustments from outside the diffractometer. The motorized alignment system consists of four motors, a motor controller, and a hand-held user interface module. Our goal was to reduce the alignment time to less than 30 min. The time available was the 10-week span of the Lewis' Educational and Research Collaborative Internship Project (LERCIP) summer internship program and the budget goal was $1200. In this report, we will describe our motorization design and discuss the results of its implementation.

Van Zandt, Noah R.↗

RF Reference Switch for Spaceflight Radiometer Calibration

The goal of this technology is to provide improved calibration and measurement sensitivity to the Soil Moisture Active Passive Mission (SMAP) radiometer. While RF switches have been used in the past to calibrate microwave radiometers, the switch used on SMAP employs several techniques uniquely tailored to the instrument requirements and passive remote-sensing in general to improve radiometer performance. Measurement error and sensitivity are improved by employing techniques to reduce thermal gradients within the device, reduce insertion loss during antenna observations, increase insertion loss temporal stability, and increase rejection of radar and RFI (radio-frequency interference) signals during calibration. The two legs of the single-pole double-throw reference switch employ three PIN diodes per leg in a parallel-shunt configuration to minimize insertion loss and increase stability while exceeding rejection requirements at 1,413 MHz. The high-speed packaged diodes are selected to minimize junction capacitance and resistance while ensuring the parallel devices have very similar I-V curves. Switch rejection is improved by adding high-impedance quarter-wave tapers before and after the diodes, along with replacing the ground via of one diode per leg with an open circuit stub. Errors due to thermal gradients in the switch are reduced by embedding the 50-ohm reference load within the switch, along with using a 0.25-in. (approximately equal to 0.6-cm) aluminum prebacked substrate. Previous spaceflight microwave radiometers did not embed the reference load and thermocouple directly within the calibration switch. In doing so, the SMAP switch reduces error caused by thermal gradients between the load and switch. Thermal issues are further reduced by moving the custom, highspeed regulated driver circuit to a physically separate PWB (printed wiring board). Regarding RF performance, previous spaceflight reference switches have not employed high-impedance tapers to improve rejection. The use of open-circuit stubs instead of a via to provide an improved RF short is unique to this design. The stubs are easily tunable to provide high rejection at specific frequencies while maintaining very low insertion loss in-band.

Knuble, Joseph↗

Fast, High-Precision Readout Circuit for Detector Arrays

The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

Rider, David M.↗

Solid state neutron dosimeter for space applications

Personnel engaged in space flight are exposed to significant flux of high energy neutrons arising from both primary and secondary sources of ionizing radiation. Presently, there exist no compact neutron sensor capable of being integrated in a flight instrument to provide real time measurement of this radiation flux. A proposal was made to construct such an instrument using special PIN silicon diode which has the property of being insensitive to the other forms of ionizing radiation. Studies were performed to determine the design and construction of a better reading system to allow the PIN diode to be read with high precision. The physics of the device was studied, especially with respect to those factors which affect the sensitivity and reproducibility of the neutron response. This information was then used to develop methods to achieve high sensitivity at low neutron doses. The feasibility was shown of enhancing the PIN diode sensitivity to make possible the measurement of the low doses of neutrons encountered in space flights. The new PIN diode will make possible the development of a very compact, accurate, personal neutron dosimeter.

Entine, Gerald↗

X-ray spectroscopy with silicon pin and avalanche photo diodes

Results of an evaluation of silicon P-Intrinsic-N (PIN) photodiodes and Avalanche Photodiodes (APD) for the direct detection of soft x rays from 1 to 20 keV and for the detection of scintillation light output from CsI(TI) for higher x ray energies (30 to 1000 keV) are presented. About one keV resolution was achieved at room temperature for both the PIN and APD detectors for soft x rays (1 to 20 keV). Commercially available, low power (18 mV), low noise, hybrid preamplifiers, were used. These photodiodes were also coupled to CsI(TI) scintillator and obtained about 6 resolution at 662 keV. The photodiode frequency response matches well with the emission spectrum of the CsI(TI) scintillator providing good spectral resolution and a higher signal than NaI(TI) when viewed by conventional photomultipliers. A PIN-CsI(TI) combination provides a low energy threshold of around 60 keV while for the APD-CsI(TI) it is 15 keV.

Desai, U. D.↗

Silicon Carbide Schottky Barrier Diode

This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Zhao, Jian H.↗

Solid-state image sensor with focal-plane digital photon-counting pixel array

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Fossum, Eric R.↗

Effects of Parasitic Reactance on Lattice Circuit Slotline Switch

A slotline lattice switch has recently been proposed and demonstrated. In that paper, ideal diode characteristics were assumed. In this paper, the effects of parasitic reactances, due to the diode and the wire bonds that connect it to the circuit, are investigated. The switch is compared to a traditional slotline switch with a single diode across the slot.

pin diode↗

Effects of Parasitic Reactance on Lattice Circuit Slotline Switch

A slotline lattice switch has recently been proposed and demonstrated. In that paper, ideal diode characteristics were assumed. In this paper, the effects of parasitic reactances, due to the diode and the wire bonds that connect it to the circuit, are investigated. The switch is compared to a traditional slotline switch with a single diode across the slot.

Lattice Circuit↗

Development and fabrication of a high current, fast recovery power diode

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Berman, A. H.↗

A radiation belt monitor for the High Energy Transient Experiment Satellite

A Radiation Belt Monitor (RBM) sensitive to protons and electrons with energy approximately greater than 0.5 MeV has been designed for the High Energy Transient Experiment (HETE) satellite in order to: first, control the on-off configuration of the experiments (i.e. those susceptible to proton damage); and second, to indicate the presence of proton and/or electron events that could masquerade as legitimate high energy photon events. One of the two RBM channels has an enhanced sensitivity to electrons. Each channel of the RBM, based on a PIN silicon diode, requires a typical power of 6 milliwatts. Tests have been performed with protons with energies from approximately 0.1 to 2.5 MeV (generated by a Cockcroft-Walton linear accelerator via the d(d,p)t reaction), and with electrons with energies up to 1 MeV (from a 1.0 microcurie Bi-207 source).

Lo, D. H.↗

Monolithic electro-optic modulator array

A PIN GaAlAs diode structure is provided with parameters for index guiding of light in a single mode. The index of refraction of the central layer I (which in practice may be lightly doped .pi. or .nu.) is greater than the p- and n-layers to create a slab waveguide in the transverse direction. Stripe contacts define separate waveguide channels that are separated electrically and optically by implanting protons or etching grooves between the stripe contacts in the upper layer. Separate reverse biasing voltages may be applied to the stripe contacts for modulation of the light in proportions to the voltage, either with absorption modulation, if the light wavelength is within about 500.ANG. of the bandgap of the .pi.-material, or phase-delay modulation, if the wavelength is separated from the bandgap of the .pi.-material by at least 900.ANG..

Robinson, Deborah L.↗

A Novel 24 Ghz One-Shot Rapid and Portable Microwave Imaging System (Camera)

A novel 2D microwave imaging system at 24 GHz based on MST techniques. Enhanced sensitivity and SNR by utilizing PIN diode-loaded resonant slots. Specific slot and array design to increase transmission and reduce cross -coupling. Real-time imaging at a rate in excess of 30 images per second. Reflection as well transmission mode capabilities. Utility and application for electric field distribution mapping related to: Nondestructive Testing (NDT), imaging applications (SAR, Holography), and antenna pattern measurements.

Ghasr, M.T.↗

Computer modeling of batteries from non-linear circuit elements

A simple non-linear circuit model for battery behavior is given. It is based on time-dependent features of the well-known PIN change storage diode, whose behavior is described by equations similar to those associated with electrochemical cells. The circuit simulation computer program ADVICE was used to predict non-linear response from a topological description of the battery analog built from advice components. By a reasonable choice of one set of parameters, the circuit accurately simulates a wide spectrum of measured non-linear battery responses to within a few millivolts.

Waaben, S.↗

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Pavlidis, Dimitris↗