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Image converter has been developed which uses opaque photocathode for improved efficiency. Device is easier to fabricate than previous semi-transparent photocathode converters and uses compounds from Groups 3-5 that are responsive to wave-lengths between ultraviolet (approximately 100 nm) and near infrared region (approximately 1000 nm).
The photoelectric yields of 2000-A thick samples of MgF2 and LiF have been measured at wavelengths in the range from 1216 to 461 A. Peak values of 43 and 34%, respectively, were obtained at wavelengths around 550 A at 45 deg incidence. Coating the cathode of a channel electron multiplier with 3000 A of MgF2 produced no significant deterioration in the electrical properties and increased the sensitivity by factors of 1.62, 2.76, and 2.60 at wavelengths of 742, 584, and 461 A, respectively. Since the stability of response of the MgF2 photocathodes appears to be equal to that of conventional metallic and semiconducting cathodes, it is concluded that MgF2 would be a practical, high-efficiency photocathode for use in the extreme ultraviolet.
It is possible to employ opaque photocathodes in image tubes having a special electromagnetic lens without the use of special internal image-forming optical lenses or mirrors. The special electron lens, having flat object and image planes, is found to provide excellent quality electron-optical image transfer. Stray light reflection inside the tube is expected to be less serious in this electron lens than in a conventional magnetically focused image tube lens due to the offset image plane, and due to the increased absorption of photons in opaque photocathode applications.
CCD in the electron-in mode, coupled with a bi-alkali photocathode to produce UV photon conversion, provides the following desirable features: (1) high UV response of the bi-alkali photocathode; (2) excellent imaging quality of a CCD area array; and (3) high signal-to-noise ratio due to the EBS (electron bombarded silicon) gain of the CCD operating in a tube configuration. This paper describes the rationale and progress made in developing a CCD for use as an UV imager.
An increase in the quantum efficiency of a 3-5 photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-5 isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, alpha without compensation of the acceptor dopant. A layer of a suitable 1-5, 1-6 or 1-7 compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.
The UV spectral sensitivity of two semitransparent visible sensitive photocathodes for spaceborne applications, a trialkali, Cs-Na2KSB, and a bialkali, K2CsSb, both on MgF2 substrates. Results show that for extended wavelength coverage, the bialkali photocathode affords increased quantum yield as compared with the trialkali type, and that the latter has a more variable responsivity with wavelength.
Three type VPM 164 photomultiplier tubes with III-IV compound InGaAsP reflective photocathodes were developed for use in ground-based and space-borne astronomical detectors. Although the achieved response of about 0.02% quantum efficiency at 1.083 microns fell short of the goal of 1% quantum efficiency, the broadband characteristics are still considerably better than those of the S-1 photocathode.
The arrays are overcoated with a CsI photocathode in the VUV. The measurements are part of the development program for the Extreme Ultraviolet Explorer. Monochromatic light from a hollow cathode discharge source passing through a McPherson grazing incidence monochromator is used to illuminate the CsI photocathode. The beam diameter is kept small (approximately 2 mm) to confine it within the individual thickness strips. A bias grid is used to produce a 50-V/mm electric field to guarantee collection of all photoelectrons emitted by the CEMA (channel electron multiplier array) webbing. The CEMAs are operated with a gain of 2-3 x 10 to the 6th and are moderately saturated. A channeltron secondary transfer standard is used to determine the absolute QE in the EUV, whereas an NBS calibrated windowed photodiode is used to measure the FUV absolute QE. It is noted that the CsI gives a factor of 3 increase in the QE in the EUV and a factor of 50-5000 in the FUV.
The quantum detection efficiency (QDE) of potassium bromide as a photocathode applied directly to the surface of a microchannel plate over the 250-1600 A wavelength range has been measured. The contributions of the photocathode material in the channels and on the interchannel web to the QDE have been determined. Two broad peaks in the QDE centered at about 450 and about 1050 A are apparent, the former with about 50 percent peak QDE and the latter with about 40 percent peak QDE. The photoelectric threshold is observed at about 1600 A, and there is a narrow QDE minimum at about 750 A which correlates with 2X the band gap energy for KBr. The angular variation of the QDE from 0 to 40 deg to the channnel axis has also been examined. The stability of Kbr with time is shown to be good with no significant degradation of QDE at wavelengths below 1216 A over a 15-day period in air.
Progress in the following three areas is reported: investigation of the basic properties of candidate photocathode materials; measurement of the quantum detection efficiency (QDE) of KCl, RbBr, and CsBr as a function of wavelength and incident angle; and assessment of the stability of these photocathodes.
Measurements are presented of the quantum detection efficiency (QDE) of three samples of RbBr photocathode layers over the 44-150-A wavelength range. The QDE of RbBr-coated microchannel plate (MCP) was measured using a back-to-back Z-stack MCP configuration in a detector with a wedge and strip position-sensitive anode, of the type described by Siegmund et al. (1984). To assess the stability of RbBr layer, the RbBr photocathode was exposed to air at about 30 percent humidity for 20 hr. It was found that the QDE values for the aged cathode were within the QDE measurement errors of the original values. A simple QDE model was developed, and it was found that its predictions are in accord with the QDE measurements.
Measurements of the EUV quantum detection efficiency (QDE) of opaque RbBr, CsBr, and KBr photocathodes are described and investigations of their photoemission characteristics over the 44-1560 A wavelength range are reported. The results show that high QDEs can be obtained in the EUV. Narrow QDE peaks at soft X-ray wavelengths occur at slightly different wavelengths for each of the materials studied. The long-wavelength thresholds vary according to the material band gap. Data on the photoemission from the photocathode layer on the microchannel plate interchannel web area are used to determine the number and energy distribution of the emitted photoelelectrons as a function of wavelength.
A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.
Characteristics of photocathodes under high light levels
Total reflection technique to achieve effective high absolute photocathode sensitivity
Metal photocathodes as secondary standards for absolute intensity measurements in vacuum UV
Photoelectrochemical production of fuels requires photoelectrodes that efficiently convert sunlight to electrochemical energy by producing photovoltage and photocurrent and maintain this ability over time under a variety of pH, illumination, and applied bias conditions. Work in the photovoltaic community has demonstrated that interfaces with high charge carrier selectivity provide high photovoltages. This offers a co-design opportunity to create semiconductor photoelectrodes with contact layers that are both carrier-selective and offer protection from degradation in aqueous solutions. In this work, we explored the ternary nitride ZnTiN 2 as an electronselective, protective layer for Si-based photocathodes. We demonstrated that ZnTiN 2 formed a heterojunction with p-type Si that facilitated electron movement toward the ZnTiN 2 surface for light-driven reduction reactions. Across a variety of electrolyte conditions, ZnTiN 2 /Si produced an open circuit voltage of ca. 400 mV vs the solution potential, while bare Si produced 220−480 mV vs the solution potential depending on conditions. ZnTiN 2 was also shown to protect Si over 72 h at open circuit in the dark in 0.1 M KHCO 3 aqueous solution at pH 10.5, with a 2.4% loss in open circuit voltage compared to a 17% loss for unprotected Si. A protective effect was also observed under illumination during methyl viologen reduction at pH 3.5 for 21 h, with a 2.5% loss in open circuit voltage observed for ZnTiN 2 /Si compared to a 25% loss in open circuit voltage for unprotected Si under the same conditions. Elemental characterization revealed the presence of oxides on the surface of ZnTiN 2 that are consistent with the Pourbaix diagram after photoelectrochemical operation; these oxides appeared to support durability without hindering charge carrier extraction to drive electrochemical work. This work highlights the promise of ZnTiN 2 for durable photoelectrochemical applications.
Immersing polymer solar cells in aqueous electrolyte for photoelectrochemical (PEC) hydrogen production is likely to cause photophysical changes that could present both challenges and opportunities for engineering functional and durable devices. Herein we study the bulk heterojunction blend poly(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiophene-2,6-diyl)-alt-(2-(((2-ethylhexyl)oxy)carbonyl)-3-fluorothieno[3,4-b]thiophene-4,6-diyl):poly(N,N'-di(2-octyldodecyl)naphthalene-1,8:4,5-bis(dicarboximide)-2,6-diyl)-alt-(2,2-bithiophene-5,5'-diyl) (PTB7-Th:N2200) excited-state dynamics in electrolyte from femtosecond to millisecond time scales using pump-probe microwave conductivity and absorption spectroscopy. While the blend swells very little, electrolyte exposure increases the microwave-frequency mobility and possibly the yield of photogenerated charges while also decreasing crystallinity. These results indicate an enhancement in key performance metrics, implying that any limitations on the performance of PEC test devices do not arise from active layer-electrolyte interactions. For the PTB7-Th:N2200 blend or similar photocathode systems, our results indicate that improving the interfacial kinetics and/or the carrier lifetime should be prioritized, not protecting the active layer from the electrolyte. Since this observation may not be universal to all polymer systems, future research should focus on identifying their limiting photophysical processes. electrolyte.