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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

Richard, M. A.↗
NASA NTRS1990

Optical control of an 8-element Ka-band phased array using a high-speed optoelectronic interconnect

Optical distribution of control signals in electronically steered phased array antennas is being considered. A demonstration experiment is described in which a high speed hybrid GaAs optoelectronic integrated circuit (OEIC) was used to control an eight element phased array antenna. The OEIC, which accepts a serial optical control signal as input and converts it to 16 demultiplexed parallel outputs, was used to control the monolithic GaAs phase shifters of a Ka-band patch panel array antenna. Antenna pattern switching speeds of 2.25 microsec, limited by interface circuitry, were observed.

Richard, M. A.↗
NASA NTRS1989

Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

Kim, J. H.↗
NASA NTRS1991

Optoelectronic Ranging Sensor For Robotic Vehicle

Proposed optoelectronic ranging system for robotic vehicle provides information on distances to points in natural scene by use of pinhole mask to sample texture in scene and determines whether portion of scene corresponds to each pinhole in focus (whether it lies at focal distance). System has no moving parts, requires little computation, and consumes only few watts of power. Passive in sense that it does not include any artificial sources of light, relying instead on sunlight reflected from scene.

Wilcox, Brian H.↗
NASA NTRS1991

Optoelectronic Shaft-Angle Encoder Tolerates Misalignments

Optoelectronic shaft-angle encoder measures angle of rotation of shaft with high precision while minimizing effects of eccentricity and other misalignments. Grooves on disk serve as reference marks to locate reading heads and measure increments of rotation of disk. Shaft-angle encoder, resembling optical compact-disk drive, includes two tracking heads illuminating grooves on disk and measures reflections from them.

Osborne, Eric P.↗
NASA NTRS1990

Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs MMIC-based phased array antennas. This paper describes the performance of a hybrid GaAs optoelectronic integrated circuit (OEIC), along with a description of its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 305 Mbps. The performance characteristics as well as potential applications of the device are presented.

Richard, M. A.↗
NASA NTRS1992

Temperature dependence of the properties of DBR mirrors used in surface normal optoelectronic devices

The variation in the center wavelength of distributed Bragg reflectors used in optoelectronic devices, such as surface emitting lasers and Fabry-Perot modulators, is measured as the temperature of the mirrors changes over the range 25 C to 105 C. An analytic expression for the shift in center wavelength with temperature is presented. The mirrors measured are made of InP/InGaAsP, GaAs/AlAs, and Si/SiN(x). The linear shifts in center wavelength are 0.110 +/- 0.003 nm/C, 0.087 +/- 0.003 nm/C, and 0.067 +/- 0.007 nm/C for the InP/InGaAsP, GaAs/AlAs, and Si/SiN mirrors, respectively. Based on these data, the change in penetration depth with temperature is calculated.

Dudley, J. J.↗
NASA NTRS1991

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Pavlidis, Dimitris↗
NASA NTRS1991

Optoelectronics research for communication programs at the Goddard Space Flight Center

Current optoelectronics research and development of high-power, high-bandwidth laser transmitters, high-bandwidth, high-sensitivity optical receivers, pointing, acquisition and tracking components, and experimental and theoretical system modeling at the NASA Goddard Space Flight Center is reviewed. Program hardware and space flight milestones are presented. It is believed that these experiments will pave the way for intersatellite optical communications links for both the NASA Advanced Tracking and Data Relay Satellite System and commercial users in the 21st century.

Krainak, Michael A.↗
NASA NTRS1993

Optoelectronic Control Of Phased-Array Antenna

Radiation patterns switched within microseconds. According to concept, digital beam-steering information destined for number of phased antenna elements transmitted in serial multiplex along optical fiber to optoelectronic integrated circuit (OEIC), demultiplexing information into parallel electronic channels to phase shifters associated with various elements. Because of small distances between elements of such arrays, compactness of optical fibers makes them attractive for distribution of beam-steering (phase-shifting) control signals. Also offers advantages of light weight, low attenuation, mechanical flexibility, large bandwidth, and immunity to both crosstalk and electromagnetic interference.

Bhasin, K. B.↗
NASA NTRS1993

Optoelectronic Inner-Product Neural Associative Memory

Optoelectronic apparatus acts as artificial neural network performing associative recall of binary images. Recall process is iterative one involving optical computation of inner products between binary input vector and one or more reference binary vectors in memory. Inner-product method requires far less memory space than matrix-vector method.

Liu, Hua-Kuang↗
NASA NTRS1993

GaAs-based optoelectronic neurons

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

Lin, Steven H.↗
NASA NTRS1992

Intersatellite communications optoelectronics research at the Goddard Space Flight Center

A review is presented of current optoelectronics research and development at the NASA Goddard Space Flight Center for high-power, high-bandwidth laser transmitters; high-bandwidth, high-sensitivity optical receivers; pointing, acquisition, and tracking components; and experimental and theoretical system modeling at the NASA Goddard Space Flight Center. Program hardware and space flight opportunities are presented.

Krainak, Michael A.↗
NASA NTRS1992

Estimation of the absolute position of mobile systems by an optoelectronic processor

A method that determine the absolute position of a mobile system with a hybrid optoelectronic processor has been developed. Position estimates are based on an analysis of circular landmarks that are detected by a TV camera attached to the mobile system. The difference between the known shape of the landmark and its image provides the information needed to determine the absolute position of the mobile system. For robust operation, the parameters of the landmark image are extracted at high speeds using an optical processor that performs an optical Hough transform. The coordinates of the mobile system are computed from these parameters in a digital co-processor using fast algorithms. Different sources of position estimation errors have also been analyzed, and consequent algorithms to improve the navigation performance of the mobile system have been developed and evaluated by both computer simulation and experiments.

Feng, Liqiang↗
NASA NTRS1993

GaAs optoelectronic neuron arrays

A simple optoelectronic circuit integrated monolithically in GaAs to implement sigmoidal neuron responses is presented. The circuit integrates a light-emitting diode with one or two transistors and one or two photodetectors. The design considerations for building arrays with densities of up to 10,000/sq cm are discussed.

Lin, Steven↗
NASA NTRS1994

Optoelectronic Receiver For Communication And Control

Many operational and diagnostic features integrated into circuit chip. GaAs-based integrated circuit designed to serve as optoelectronic interface in phased-array antenna. Intended function to receive digital control signals transmitted on optical fiber and to convert signals to electronic control signals, which then applied to monolithic microwave integrated circuit (MMIC). Also used in reception of high-rate optical digital communications within computers, between computers, and in signal-distribution systems in aircraft, automobiles, and ships. Interface circuit represents significant improvement over preexisting interface circuits in that its clock-signal-recovery subcircuit requires little or no preamble for immediate synchronization.

Kunath, Richard↗
NASA NTRS1994

High-Resolution Optoelectronic Shaft-Angle Encoder

Improved optoelectronic encoder measures absolute angle to which shaft has been rotated. Costs little more than older, less capable encoders do, yet measures absolute angles at high resolution and does not lose absolute-angle data because generates those data anew with each reading at up to 1,000 times per second. It accumulates increments to measure total angular interval through which shaft has been turned (including unlimited number of complete turns), as long as power remains on.

Leviton, Douglas B.↗
NASA NTRS1994

Optoelectronic Tool Measures Steps And Gaps Between Tiles

Optoelectronic tool measures gaps between tiles and steps between faces of tiles. Eliminates need for difficult, tedious, time-consuming, and error-prone manual measurements. Automates measurements of steps and gaps to within 0.006 in. and records data automatically. Developed for inspecting thermal-insulation tiles on Space Shuttle. Adaptable to inspection of any other settings where steps and gaps critical.

Davis, Dick↗