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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

The Synthesis of Manganese Hydroxide Nanowire Arrays for a High-Performance Zinc-Ion Battery

The morphology, microstructure as well as the orientation of cathodic materials are the key issues when preparing high-performance aqueous zinc-ion batteries (ZIBs). In this paper, binder-free electrode Mn(OH)2 nanowire arrays were facilely synthesized via electrodeposition. The nanowires were aligned vertically on a carbon cloth. The as-prepared Mn(OH)2 nanowire arrays were used as cathode to fabricate rechargeable ZIBs. The vertically aligned configuration is beneficial to electron transport and the free space between the nanowires can provide more ion-diffusion pathways. As a result, Mn(OH)2 nanowire arrays yield a high specific capacitance of 146.3 Ma h g−1 at a current density of 0.5 A g−1. They also demonstrates ultra-high diffusion coefficients of 4.5 × 10−8~1.0 × 10−9 cm2 s−1 during charging and 1.0 × 10−9~2.7 × 10−11 cm−2 s−1 during discharging processes, which are one or two orders of magnitude higher than what is reported in the studies. Furthermore, the rechargeable Zn//Mn(OH)2 battery presents a good capacity retention of 61.1% of the initial value after 400 cycles. This study opens a new avenue to boost the electrochemical kinetics for high-performance aqueous ZIBs.

25 ENERGY STORAGE↗
DOE OSTI2022

Unveiling mechanism of surface-guided platinum nanowire growth

We report surface-guided growth of non-planar nanowires on functional substrates offers the new opportunity to precisely control their diameter, length, density and alignment, which will greatly benefit their direct integration into practical devices for large-scale applications. However, control of noble metal nanowires growth and arrangement remains a great challenge, and the mechanistic understanding is still limited. Herein, we choose Pt as a model material system to study the synthesis conditions required to control the in situ growth of aligned Pt nanowires on flat titanium substrate via a one-step and room-temperature green chemical synthesis process in aqueous solution. Most importantly, it is for the first time discovered that ordered nanoarrays and self-assembled nanoflowers can be directly grown on flat Ti substrate by merely adjusting the reaction times, without use of any soft/hard templates, surfactants and organic solvents. The proposed surface-guided growth mechanisms for nanoarray and nanoflower formation in this study may shed light on understanding of oriented arrangement/assembly of one-dimensional Pt nanowires into desirable morphologies for a variety of practical device applications.

Pt nanoflower↗
DOE OSTI2026

Two-Dimensional Perovskite Single-Nanowire Photodetectors

High-performance microphotodetectors require materials that combine strong light–matter interaction, fast charge transport, and ambient stability. Here, we demonstrate single-nanowire devices based on the 2D perovskite (TPA3) 2 PbBr 4 , synthesized via a controlled slow-cooling self-assembly process that yields defect-minimized, anisotropic nanowires with smooth facets. These microphotodetectors exhibit ultralow dark currents (∼10 –15 A), high responsivity (up to 156 mA W –1 ), and exceptional specific detectivity (∼10 11 Jones) under near-UV (405 nm) illumination, with rise and fall times in the millisecond regime. The superior detectivity is primarily driven by the suppression of thermal noise through the material’s ultralow dark current, while the millisecond temporal response is governed by high-intensity trap-filling dynamics. The devices maintain stable operation over 4000 s of continuous on/off cycling and show remarkable ambient stability over weeks, attributed to dense crystal packing and robust organic cation layers. Furthermore, the influence of nanowire thickness on the charge collection efficiency is systematically elucidated through optical penetration depth analysis, highlighting design principles for optimizing low-dimensional perovskite photodetectors. This study introduces single 2D perovskite nanowires as a versatile platform for miniaturized, high-performance optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Probing the Behavior of Composition‐Tunable Ultrathin PtNi Nanowires for CO Oxidation and Small‐Molecule Electrocatalytic Reactions

We have successfully synthesized ultrathin nanowires of pure Pt, Pt 99 Ni 1 , Pt 9 Ni 1 , and Pt 7 Ni 3 using a modified room-temperature soft-template method. Analysis of both methanol oxidation reaction (MOR) and ethanol oxidation reaction (EOR) results found that the Pt 7 Ni 3 samples yielded the best performance with specific activities of 0.36 and 0.34 mA/cm 2 respectively. Additionally, formic acid oxidation reaction (FAOR) tests noted that both Pt and PtNi nanowires oxidize small organic molecules (SOMs) via an indirect pathway. CO oxidation data suggests little measurable performance without any pre-reduction treatment; however, after annealing in H 2 , we detected significantly improved CO 2 formation for both Pt 9 Ni 1 and Pt 7 Ni 3 motifs. These observations highlight the importance of pre-treating these nanowires under a reducing atmosphere to enhance their performance for CO oxidation. To explain these findings, we collected extended x-ray adsorption fine structure (EXAFS) spectroscopy data, consistent with the presence of partial alloying with a tendency for Pt and Ni to segregate, thereby implying the formation of a Pt-rich shell coupled with a Ni-rich core. Here, we also observed that the degree of alloying within the nanowires increased after annealing in a reducing atmosphere, a finding deduced through analysis of the coordination numbers and calculations of Cowley's short range order parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Correlated X‐Ray and Electron Microscopies of a Single Biphasic GaAs Nanowire

Engineering the properties of semiconductors by changing their crystalline phase is a technologically and economically relevant alternative to doping using foreign elements, with strong potential for photonic and electronic applications. Although major advances have been reported recently for crystal‐phase engineering of III‐V and group IV semiconductor nanowires, interfacing two mismatched crystalline phases in a nanostructure induces several deformation mechanisms, which remain largely unexplored. Here, using state‐of‐the‐art synchrotron X‐ray nanobeam diffraction and transmission electron microscopy, subtle twisting and bending is unveiled within an individual GaAs nanowire containing cubic and hexagonal segments. Their role is discussed in accommodating the inter‐reticular spacing fluctuations, and their variations are correlated to the nanoscale phase distribution and to the effect of the NW support. This study brings direct evidence of a complex combination of deformation mechanisms in biphasic nanowires, which opens a new path to tune the nanowire properties with appealing perspectives for device engineering in nanophotonics and nanomechanics.

III-V semiconductors↗
DOE OSTI2021

Shape evolution and growth mechanisms of 3D-printed nanowires

3D printing of nanowires using Focused Electron Beam Induced Deposition (FEBID) enables the direct-write fabrication of complex 3D objects on almost any substrate surface. The physical properties of such freestanding structures are determined by the dimensions of constituent nanowires. However, little knowledge is available about the exact shape of the nanowires, which is indispensable for calculations and simulations as well as for optimization in applications. In this study, we evaluate the thicknesses and widths of freestanding segments as a function of the inclination angles, primary electron energy, beam currents, and precursor flux. Furthermore, the cross-sectional shape, the cross-sectional area, and the evolution along the length of the wire are investigated. Basing on detailed scanning electron microscopy measurements and Monte Carlo/Finite Differences simulations, the effects that the growth parameters have on the segment growth are elucidated. Furthermore, the results shed light on the growth evolution of the structures and form the basis for future studies on the fabrication of high-precision, arbitrarily shaped nanowires.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ultrathin, High-Aspect Ratio, and Free-Standing Magnetic Nanowires by Exfoliation of Ferromagnetic Quasi-One-Dimensional van der Waals Lattices

Driven by numerous discoveries of novel physical properties and integration into functional devices, interest in one-dimensional (1D) magnetic nanostructures has grown tremendously. Traditionally, such structures are accessed with bottom-up techniques, but these require increasing sophistication to allow precise control over crystallinity, branching, aspect ratio, and surface termination, especially when approaching the subnanometer regime in magnetic phases. In this work, we show that mechanical exfoliation of bulk quasi-one-dimensional crystals, a method similar to those popularized for two-dimensional van der Waals (vdW) lattices, serves as an efficient top-down method to produce ultrathin freestanding nanowires that are both magnetic and semiconducting. We use CrSbSe 3 as a representative quasi-1D vdW crystal with strong magnetocrystalline anisotropy and show that it can be exfoliated into nanowires with an average cross-section of 10 ± 2.8 nm. The CrSbSe 3 nanowires display reduced Curie–Weiss temperature but higher coercivity and remanence than the bulk phase. The methodology developed here for CrSbSe 3 , a representative for a vast class of 1D vdW lattices, serves as a blueprint for investigating confinement effects for 1D materials and accessing functional nanowires that are difficult to produce via traditional bottom-up methods.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K.

Thermoelectrics operating at high temperature can cost-effectively convert waste heat and compete with other zero-carbon technologies. Among different high-temperature thermoelectrics materials, silicon nanowires possess the combined attributes of cost effectiveness and mature manufacturing infrastructures. Despite significant breakthroughs in silicon nanowires based thermoelectrics for waste heat conversion, the figure of merit (ZT) or operating temperature has remained low. Here, we report the synthesis of large-area, wafer-scale arrays of porous silicon nanowires with ultra-thin Si crystallite size of ~4 nm. Concurrent measurements of thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (S) on the same nanowire show a ZT of 0.71 at 700 K, which is more than ~18 times higher than bulk Si. This ZT value is more than two times higher than any nanostructured Si-based thermoelectrics reported in the literature at 700 K. Experimental data and theoretical modeling demonstrate that this work has the potential to achieve a ZT of ~1 at 1000 K.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Surface photovoltage spectroscopy observes junctions and carrier separation in gallium nitride nanowire arrays for overall water-splitting

Gallium nitride (GaN) nanowire arrays on silicon are able to drive the overall water-splitting reaction with up to 3.3% solar-to-hydrogen efficiency. Photochemical charge separation is key to the operation of these devices, but details are difficult to observe experimentally because of the number of components and interfaces. Here, we use surface photovoltage spectroscopy to study charge transfer in i-, n-, and p-GaN nanowire arrays on n+ -Si wafers in the presence and absence of Rh/Cr 2 O 3 co-catalysts. The effect of the space charge layer and sub-bandgap defects on majority and minority carrier transport can be clearly observed, and estimates of the built-in potential of the junctions can be made. Transient illumination of the p-GaN/n + -Si junction generates up to -1.4 V surface photovoltage by carrier separation along the GaN nanowire axis. This process is central to the overall water-splitting function of the n + -Si/p-GaN/Rh/Cr 2 O 3 nanowire array. Overall, these results improve our understanding of photochemical charge transfer and separation in group III–V semiconductor nanostructures for the conversion of solar energy into fuels.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Nanowire-Based Materials as Coke-Resistant Catalyst Supports for Dry Methane Reforming

In this paper, nanowire-supported catalysts loaded with nickel are shown to be coke resistant compared to nanoparticle-supported catalysts. Specifically, Ni-loaded titania-based nanowire catalysts were tested with the dry methane reforming process in a laboratory-scale continuous packed-bed atmospheric reactor. The CO 2 conversion rate stayed above 90% for over 30 h on stream under coke-promoting conditions, such as high flow rates, low temperatures, and a high ratio of CH 4 to CO 2 . The coke (C x H y , x>>y) on the spent catalyst surface for both nanowire- and nanoparticle-supported catalysts was characterized by TGA, temperature-programmed reduction (TPR), and electron microscopy (SEM/TEM/EDS), and it was revealed that the types of carbon species present and their distribution over the morphology-enhanced materials played a major role in the deactivation. The CO 2 conversion activity of Ni supported on titania nanoparticles was reduced from ~80% to less than 72% in 30 h due to the formation of a graphitic coke formation. On the other hand, Ni particles supported on nanowires exhibited cube-octahedral morphologies, with a high density of non- (111) surface sites responsible for the increased activity and reduced graphitic coke deposition, giving a sustained and stable catalytic activity during a long time-on-stream experiment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Modulation and Modeling of Three-Dimensional Nanowire Assemblies Targeting Gas Sensors with High Response and Reliability

Despite improved sensitivity, simple downsizing of gas-sensing components to randomly arranged nanostructures often faces challenges associated with unpredictable electrical conduction pathways. In the present study, controlled fabrication of three-dimensional (3D) metal oxide nanowire networks is demonstrated that can greatly improve both signal stability and sensor response compared to random nanowire arrays. For example, the highest ever reported H 2 S gas response value, and a 5 times lower relative standard deviation of baseline resistance than that of random nanowires assemblies, are achieved with the ordered 3D nanowire network. Systematic engineering of 3D geometries and their modeling, utilizing equivalent circuit components, provide additional insights into the electrical conduction and gas-sensing response of 3D assemblies, revealing the critical importance of wire-to-wire junction points and their arrangement. Here these findings suggest new design rules for both enhanced performance and reliability of chemical sensors, which may also be extended to other devices based on nanoscale building blocks.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Sn-InAs Nanowire Shadow-Defined Josephson Junctions

Hybrid superconductor–semiconductor platforms are foundational to advancing quantum information technologies, motivating the integration of materials with clean interfaces, robust superconductivity, and scalable architectures. Here, in this work, we report the synthesis and analysis of inclined InAs nanowires, conformally coated with β-Sn shells. These nanowires extend in opposite in-plane directions, forming a self-aligned, criss-cross network. This enables the deterministic formation of nanowire-shadow Josephson junctions through angle-controlled, low-temperature Sn deposition. Structural characterization shows uniform polycrystalline β-Sn shells forming a sharp, diffusion-free interface with InAs. Low-temperature transport measurements reveal a hard induced superconducting gap ≈ 600 μeV, switching currents up to ≈ 500 nA, and parallel magnetic field resilience beyond 1T. These results establish β-Sn/InAs nanowire networks as a promising platform for superconducting qubits, low-noise microwave devices, and the exploration of exotic superconducting phases including triplet pairing and topological superconductivity.

B-Sn↗
DOE OSTI2024

Dynamic Evolution of Copper Nanowires during CO 2 Reduction Probed by Operando Electrochemical 4D-STEM and X-ray Spectroscopy

Nanowires have emerged as an important family of one-dimensional (1D) nanomaterials owing to their exceptional optical, electrical, and chemical properties. In particular, Cu nanowires (NWs) show promising applications in catalyzing the challenging electrochemical CO 2 reduction reaction (CO 2 RR) to valuable chemical fuels. Despite early reports showing morphological changes of Cu NWs after CO 2 RR processes, their structural evolution and the resulting exact nature of active Cu sites remain largely elusive, which calls for the development of multimodal operando time-resolved nm-scale methods. Here, in this study, we report that well-defined 1D copper nanowires, with a diameter of around 30 nm, have a metallic 5-fold twinned Cu core and around 4 nm Cu 2 O shell. Operando electrochemical liquid-cell scanning transmission electron microscopy (EC-STEM) showed that as-synthesized Cu@Cu 2 O NWs experienced electroreduction of surface Cu 2 O to disordered (spongy) metallic Cu shell (Cu@Cu S NWs) under CO 2 RR relevant conditions. Cu@Cu S NWs further underwent a CO-driven Cu migration leading to a complete evolution to polycrystalline metallic Cu nanograins. Operando electrochemical four-dimensional (4D) STEM in liquid, assisted by machine learning, interrogates the complex structures of Cu nanograin boundaries. Correlative operando synchrotron-based high-energy-resolution X-ray absorption spectroscopy unambiguously probes the electroreduction of Cu@Cu 2 O to fully metallic Cu nanograins followed by partial reoxidation of surface Cu during postelectrolysis air exposure. This study shows that Cu nanowires evolve into completely different metallic Cu nanograin structures supporting the operando (operating) active sites for the CO 2 RR.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Nanowire implosion under laser amplified spontaneous emission pedestal irradiation

Nanowire array targets exhibit high optical absorption when interacting with short, intense laser pulses. This leads to an increased yield in the production of accelerated particles for a variety of applications. However, these interactions are sensitive to the laser prepulse and could be significantly affected. Here, we show that an array of aligned nanowires is imploded when irradiated by an Amplified Spontaneous Emission pedestal of a 1 PW laser with an intensity on the order of 10 11 W cm –2 . Using radiation hydrodynamics simulations, we demonstrate that the electron density profile is radially compressed at the tip by the rocket-like propulsion of the ablated plasma. The mass density compression increases up to 2.9x when a more dense nanowire array is used. This is due to the ablation pressure from the neighboring nanowires. These findings offer valuable information for selecting an appropriate target design for experiments aimed at enhancing production of accelerated particles.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Absolute laser energy absorption measurement of relativistic 0.7 ps laser pulses in nanowire arrays

Laser absorption is one of the most important parameters governing laser–matter interactions. The laser energy absorption on nanowire array targets is measured for the first time in the relativistic regime at intensities of 10 19 W=cm 2 and compared to foil targets. The results show that the laser energy absorption of 0.7 ps frequency doubled (527 nm) pulses on Au nanowire targets varies widely with nanowire parameters, reaching laser energy absorption values up to 71% of the incident energy, significantly exceeding those of solid flat targets obtained in similar irradiation conditions. The analysis shows that the increase in absorption strongly correlates with larger effective target surface area over a broad range of nanowire parameters explored. These direct absorption measurements provide valuable data to benchmark simulations of the relativistic laser pulse interactions with nanostructures.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets

Abstract We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale.

Materials Science↗
DOE OSTI2021

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

The controlled fabrication of vertical, tapered, and high-aspect ratio GaN nanowires via a two-step top-down process consisting of an inductively coupled plasma reactive ion etch followed by a hot, 85% H 3 PO 4 crystallographic wet etch is explored. The vertical nanowires are oriented in the $[0001]$ direction and are bound by sidewalls comprising of $\{33\bar{6}2\}$ semipolar planes which are at a 12° angle from the [0001] axis. High temperature H3PO4 etching between 60 °C and 95 °C result in smooth semipolar faceting with no visible micro-faceting, whereas a 50 °C etch reveals a micro-faceted etch evolution. High-angle annular dark-field scanning transmission electron microscopy imaging confirms nanowire tip dimensions down to 8–12 nanometers. The activation energy associated with the etch process is 0.90 ± 0.09 eV, which is consistent with a reaction-rate limited dissolution process. The exposure of the $\{33\bar{6}2\}$ type planes is consistent with etching barrier index calculations. The field emission properties of the nanowires were investigated via a nanoprobe in a scanning electron microscope as well as by a vacuum field emission electron microscope. Finally, the measurements show a gap size dependent turn-on voltage, with a maximum current of 33 nA and turn-on field of 1.92 V nm -1 for a 50 nm gap, and uniform emission across the array.

77 NANOSCIENCE AND NANOTECHNOLOGY↗