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This is a poster presentation given at the 2024 AIChE Annual Meeting, San Diego, CA, October 27-31, 2024. In this poster we describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors.
The synthesis of ultrathin 2D amorphous dielectric film represents a major challenge due to the metastable nature of amorphous phases. We describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors. The prepared atomically thin 2D amorphous carbon can be suspended over cavities as freestanding membranes with high modulus of 400±100 GPa and demonstrate robust dielectric properties with dielectric strength above 20 MV·cm-1 and leakage current density below 10-4 A·cm-2 through a scaled thickness of three-atomic layers. When implemented as ultrathin gate dielectrics in 2D transistors or ion-transport media in memristors, they enable exceptional device performance and spatiotemporal uniformity, resulting from their amorphous form, intrinsic ultrathinness, and 2D atomic structures.
invited presentation
Carbon nanotube (CNT) baud nanotechnology appears to be promising for future Theoretical analysis and results for the ballistic current carrying capacity of nanotube wires am presented. Aspects of metal-nanotube coupling are examined. Results am also presented for chemical vapor deposition of CNT from hydrocarbon feedstock.
Since its invention in 1948, the transistor has revolutionized our everyday life - transistor radios and TV's appeared in the early 1960s, personal computers came into widespread use in the mid-1980s, and cellular phones, laptops, and palm-sized organizers dominated the 1990s. The electronics revolution is based upon transistor miniaturization; smaller transistors are faster, and denser circuitry has more functionality. Transistors in current generation chips are 0.25 micron or 250 nanometers in size, and the electronics industry has completed development of 0.18 micron transistors which will enter production within the next few years. Industry researchers are now working to reduce transistor size down to 0.13 micron - a thousandth of the width of a human hair. However, studies indicate that the miniaturization of silicon transistors will soon reach its limit. For further progress in microelectronics, scientists have turned to nanotechnology to advance the science. Rather than continuing to miniaturize transistors to a point where they become unreliable, nanotechnology offers the new approach of building devices on the atomic scale [see sidebar]. One vision for the next generation of miniature electronics is atomic chain electronics, where devices are composed of atoms aligned on top of a substrate surface in a regular pattern. The Atomic Chain Electronics Project (ACEP) - part of the Semiconductor Device Modeling and Nanotechnology group, Integrated Product Team at the NAS Facility has been developing the theory of understanding atomic chain devices, and the author's patent for atomic chain electronics is now pending.
This viewgraph presentation is focused on the general aspect of atomic chain electronics that I have been studying. Results have been published before, but are being rederived here using a new physical/mathematical picture/model, which deepens the physical understanding. Precise adatom structures can be used as a template on a regulated surface with no uncertainty.
Topics discussed include: (1) Light-Weight Multi-Functional Materials: Nanomechanics; Nanotubes and Composites; Thermal/Chemical/Electrical Characterization; (2) Biomimetic/Revolutionary Concepts: Evolutionary Computing and Sensing; Self-Heating Materials; (3) Central Computing System: Molecular Electronics; Materials for Quantum Bits; and (4) Molecular Machines.
The topics covered by the panels of this viewgraph presentation include phonon scattering, layered structures, DNA as a device, the influence of twist and rise in the DNA molecule, counter-ions, conductance versus length, and intrinsic resonant tunneling.
Quantitative simulations of carrier transport in physical systems that are of the size of a few nanometers require the use of quantum mechanical models at a very fundamental level.
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Explore the source record for details and available documents.
Explore the source record for details and available documents.
This viewgraph presentation reviews the use of Carbon Nanotube electronics in the bioelectronics. Included is a brief review of the carbon nanotube manufacturing, the use of carbon nanotubes in Atomic Force Microscopy (AFM), and Computational Nanotechnology, that allows designers to understand nanotube characteristics and serves as a design tool.
Several years ago, NASA started making plans to send robots to explore the deep, dark craters on the Moon. As part of these plans, NASA needed modeling tools to help engineer unique electronics to withstand extremely cold temperatures. According to Jonathan Pellish, a flight systems test engineer at Goddard Space Flight Center, "An instrument sitting in a shadowed crater on one of the Moon s poles would hover around 43 K", that is, 43 kelvin, equivalent to -382 F. Such frigid temperatures are one of the main factors that make the extreme space environments encountered on the Moon and elsewhere so extreme. Radiation is another main concern. "Radiation is always present in the space environment," says Pellish. "Small to moderate solar energetic particle events happen regularly and extreme events happen less than a handful of times throughout the 7 active years of the 11-year solar cycle." Radiation can corrupt data, propagate to other systems, require component power cycling, and cause a host of other harmful effects. In order to explore places like the Moon, Jupiter, Saturn, Venus, and Mars, NASA must use electronic communication devices like transmitters and receivers and data collection devices like infrared cameras that can resist the effects of extreme temperature and radiation; otherwise, the electronics would not be reliable for the duration of the mission.
No abstract available
It was demonstrated recently that the nano-optical and nanoelectronic properties of VO 2 can be spatially programmed through the local injection of oxygen vacancies by atomic force microscope writing. In this work, we study the dynamic evolution of the patterned domain structures as a function of the oxygen vacancy concentration and the time. A threshold doping level is identified that is critical for both the metal–insulator transition and the defect stabilization. The diffusion of oxygen vacancies in the monoclinic phase is also characterized, which is directly responsible for the short lifetimes of sub-100 nm domain structures. This information is imperative for the development of oxide nanoelectronics through defect manipulations.