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Proposed npn AlxGa1-xAs phototransistor incorporates multiple-quantum-well (MQW) infrared photodetector. Has n-doped contacts and is embedded between p-doped base region and n-doped collector region of transistor. Photocurrent amplified, and dark current suppressed.
Cosmic-ray sensor comprises planar rectangular array of lateral bipolar npn floating-base transistors each of which defines pixel. Collector contacts of all transistors in each row connected to same X (column) line conductor; emitter contacts of all transistors in each column connected to same Y (row) line conductor; and current in each row and column line sensed by amplifier, output of which fed to signal-processing circuits.
The design of the transformer designated as T101 (061-0351) in the Filament/Bias module (061-0119) in the Planet-B NMS instrument was verified because of the differences from the GCMS and INMS instrument designs. A breadboard of a representation of the Hybrid 2301065, Bias Drive A driving a 2N3700 NPN transistor, with dual 75V secondaries, with loads, was used to test the circuit. The initial transformer design that was wound with bifilar secondaries was too unstable to test. The second 1408 transformer with a split bobbin and the feedback winding below the primary was also found to be unstable. (It was nearly impossible to keep the circuit from squeeging). The third transformer tested has the feedback on the outside of the resonant winding. The primary goal of the design was to have as tight a magnetic coupling as possible to the resonant winding, and as loose a coupling as possible to the primary. Further, the circuit AC ground is connected to the winding at the feedback end of the secondary winding. This transformer proved to be very stable - it is virtually impossible to make this design squeg. An emitter resistor (Rl29A) was added to this circuit, as referenced to the GCMS design, to protect Q102 from thermal runaway in the event of a turn on with a non- resonate circuit or load short. This was verified to protect Q102 for at least 30 seconds in the event of a short. Approximately 1% of the 4lmW input power is lost in this protection resistor under normal operation. The circuit was verified to operate normally when a radiated Q102 (2N3700), (low Beta) transistor was substituted for the normal 2N3700. It should be noted that the monitored drive voltage went to approximately 2.7V with this low gain transistor.
This paper presents a physics-based model describing the current-induced formation of a parasitic barrier in the conduction band at the base collector heterojunction in npn SiGe heterojunction bipolar transistors (HBTs). Due to the valence band discontinuity DELTA E(sub v), hole injection into the collector at the onset of base pushout is impeded, which gives rise to formation of a barrier to electron transport which degrades the device's high frequency performance. In this paper, we present results from an analytical model for the height of the barrier calculated from the device's structure as a function of the collector junction bias and collector current density.
Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.
Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.
Environment has significant effects on the nutrient content of field-grown crop plants. Little is known, however, about compositional changes caused by controlled environments in which plants receive only artificial radiation and soilless, hydroponic culture. This knowledge is essential for developing a safe, nutritious diet in a Controlled Ecological Life-Support System (CELSS). Three crops that are candidates for inclusion in a CELSS (rice, wheat, and white potato) were grown both in the field and in controlled environments where the hydroponic nutrient solution, photosynthetic photon flux (PPF), and CO2 level were manipulated to achieve rapid growth rates. Plants were harvested at maturity, separated into discrete parts, and dried prior to analysis. Plant materials were analyzed for proximate composition (protein, fat, ash, and carbohydrate), total nitrogen (N), nitrate, minerals, and amino-acid composition. The effect of environment on nutrient content varied by crop and plant part. Total N and nonprotein N (NPN) contents of plant biomass generally increased under controlled-environment conditions compared to field conditions, especially for leafy plant parts and roots. Nitrate levels were increased in hydroponically-grown vegetative tissues, but nitrate was excluded from grains and tubers. Mineral content changes in plant tissue included increased phosphorus and decreased levels of certain micronutrient elements under controlled-environment conditions. These findings suggest that cultivar selection, genetic manipulation, and environmental control could be important to obtain highly nutritious biomass in a CELSS.
Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from 23 to 200 C. All testing was done in a pulse mode at low duty cycle (approx. 0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of either 7 or 0.6 V. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 OMEGA non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 81 to 97 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 30 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 61 to 77 ns with the 7 V sweep-out and 130 to 150 ns with the 0.6 V sweep-out. At a fixed temperature and I(sub C), the turn-off time decreased slightly with decreasing I(sub B), for I(sub B) sufficient to still provide full turn-on. The ratio of conduction to switching losses is estimated, based on the observed I(sub C) transition times and static curves. An estimate at 200 kHz and a 50 percent duty cycle shows that under practicable conditions the two losses can be comparable. Hence the evidence obtained does not support the occasionally voiced concern of necessarily unacceptably high conduction losses in SiC-based BJTs.
High quality infrared (IR) quantum detectors are important for several applications, such as atmospheric remote sensing, chemical detection and absorption spectroscopy. Although several IR detectors are commercially available, with different materials and structures, they provide limited performance regarding the signal-to-noise ratio and the corresponding minimum detectable signal. InGaAsSb/AlGaAsSb heterojunction based phototransistors show strong potential for developing IR sensors with improved performance. In this paper, the performance of a novel npn InGaAsSb/AlGaAsSb heterojunction phototransistor is presented. This performance study is based on experimental characterization of the device dark current, noise and spectral response. Detectivity of 1.7x10(exp 9) cmHz(exp 1/2)/W at 2 microns was obtained at 100 C temperature and 2 V bias voltage. This corresponds to a responsivity of 94.7 A/W and an internal gain of 156 with about 37.7% quantum efficiency. Reducing the temperature to -30 C allows to increase the bias to 3V and enhance the detectivity to 8.7x10(exp 10) cmHz(exp 1/2)/W at the same wavelength, which corresponds to a responsivity of 386.5 A/W and an internal gain of 288.2 with about 83.3% quantum efficiency. The device impulse response and linearity, including the corresponding dynamic range, also are presented. Impulse response analysis indicated a settling time of about 1.1 s at 2V and 100 C, while linearity measurements indicated a constant responsivity in the radiation intensity range of 1.6x10(exp -7) W/sq cm and 31.6 mW/sq cm.
Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from room to 200 C. All testing was done in a pulse mode at low duty cycle (approx.0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of 7 V. These base drive signals were implemented by 850 V, gated power pulsers, having rise-times of roughly 10 ns, or less. Base charge sweep-out with a 7 V negative pulse did not produce the large reverse base current pulse seen in a comparably rated Si-based BJT. This may be due to a very low charge storage time. The decay of the collector current was more linear than its exponential-like rise. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 Omega non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 80 to 94 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 34 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 72 to 84 ns with the 7 V sweep-out.
Electronics designed for space exploration missions must display efficient and reliable operation under extreme temperature conditions. For example, lunar outposts, Mars rovers and landers, James Webb Space Telescope, Europa orbiter, and deep space probes represent examples of missions where extreme temperatures and thermal cycling are encountered. Switching transistors, small signal as well as power level devices, are widely used in electronic controllers, data instrumentation, and power management and distribution systems. Little is known, however, about their performance in extreme temperature environments beyond their specified operating range; in particular under cryogenic conditions. This report summarizes preliminary results obtained on the evaluation of commercial-off-the-shelf (COTS) automotive-grade NPN small signal transistors over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these transistors and to determine suitability for use outside their recommended temperature limits.
This paper presents radiation test results for several different precision voltage devices. Their degradation is compared to that expected for the basic bandgap reference circuit, which is used as a theoretical benchmark, and uses only npn transistorss.