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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Fabrication and Performance of Lateral GaN Vacuum Nanoelectronic Devices.
Abstract not provided.
GaN Vacuum Nanoelectronics
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On-chip, Ultra-Low Voltage GaN Vacuum Nanoelectronics
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2D Amorphous Carbon Dielectric Prepared from Solution Precursor for Nanoelectronics
The preparation of amorphous 2D nanodielectrics represents a major challenge due to the metastable nature of amorphous phases. We describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors. The prepared atomically thin 2D amorphous carbon can be suspended over cavities as freestanding membranes with high modulus of 400±100 GPa and demonstrate robust dielectric properties with dielectric strength above 20 MV·cm-1 and leakage current density below 10-4 A·cm-2 through a scaled thickness of three-atomic layers. When implemented as ultrathin gate dielectrics in 2D transistors or ion-transport media in memristors, they enable exceptional device performance and spatiotemporal uniformity, resulting from their amorphous form, intrinsic ultrathinness, and 2D atomic structures.
Solution-based Synthesis of Ultrathin Quasi-2D Amorphous Carbon for Nanoelectronics
This is a poster presentation given at the 2024 AIChE Annual Meeting, San Diego, CA, October 27-31, 2024. In this poster we describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors.
Solution-Based Synthesis of Ultrathin Quasi-2D Amorphous Carbon for Nanoelectronics
The synthesis of ultrathin 2D amorphous dielectric film represents a major challenge due to the metastable nature of amorphous phases. We describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors. The prepared atomically thin 2D amorphous carbon can be suspended over cavities as freestanding membranes with high modulus of 400±100 GPa and demonstrate robust dielectric properties with dielectric strength above 20 MV·cm-1 and leakage current density below 10-4 A·cm-2 through a scaled thickness of three-atomic layers. When implemented as ultrathin gate dielectrics in 2D transistors or ion-transport media in memristors, they enable exceptional device performance and spatiotemporal uniformity, resulting from their amorphous form, intrinsic ultrathinness, and 2D atomic structures.
Lateral GaN Vacuum Nanoelectronic Devices for Photonic Applications and Beyond
invited presentation
Nanotubes in Nanoelectronics: Transport, Growth and Modeling
Carbon nanotube (CNT) baud nanotechnology appears to be promising for future Theoretical analysis and results for the ballistic current carrying capacity of nanotube wires am presented. Aspects of metal-nanotube coupling are examined. Results am also presented for chemical vapor deposition of CNT from hydrocarbon feedstock.
Smallest Nanoelectronic with Atomic Devices with Precise Structures
Since its invention in 1948, the transistor has revolutionized our everyday life - transistor radios and TV's appeared in the early 1960s, personal computers came into widespread use in the mid-1980s, and cellular phones, laptops, and palm-sized organizers dominated the 1990s. The electronics revolution is based upon transistor miniaturization; smaller transistors are faster, and denser circuitry has more functionality. Transistors in current generation chips are 0.25 micron or 250 nanometers in size, and the electronics industry has completed development of 0.18 micron transistors which will enter production within the next few years. Industry researchers are now working to reduce transistor size down to 0.13 micron - a thousandth of the width of a human hair. However, studies indicate that the miniaturization of silicon transistors will soon reach its limit. For further progress in microelectronics, scientists have turned to nanotechnology to advance the science. Rather than continuing to miniaturize transistors to a point where they become unreliable, nanotechnology offers the new approach of building devices on the atomic scale [see sidebar]. One vision for the next generation of miniature electronics is atomic chain electronics, where devices are composed of atoms aligned on top of a substrate surface in a regular pattern. The Atomic Chain Electronics Project (ACEP) - part of the Semiconductor Device Modeling and Nanotechnology group, Integrated Product Team at the NAS Facility has been developing the theory of understanding atomic chain devices, and the author's patent for atomic chain electronics is now pending.
Smallest Nanoelectronics with Adatom Chains
This viewgraph presentation is focused on the general aspect of atomic chain electronics that I have been studying. Results have been published before, but are being rederived here using a new physical/mathematical picture/model, which deepens the physical understanding. Precise adatom structures can be used as a template on a regulated surface with no uncertainty.
Nanotube Heterojunctions and Endo-Fullerenes for Nanoelectronics
Topics discussed include: (1) Light-Weight Multi-Functional Materials: Nanomechanics; Nanotubes and Composites; Thermal/Chemical/Electrical Characterization; (2) Biomimetic/Revolutionary Concepts: Evolutionary Computing and Sensing; Self-Heating Materials; (3) Central Computing System: Molecular Electronics; Materials for Quantum Bits; and (4) Molecular Machines.
Computational Nanoelectronics: Applications to DNA, Carbon Nanotubes and Nanotransistors
The topics covered by the panels of this viewgraph presentation include phonon scattering, layered structures, DNA as a device, the influence of twist and rise in the DNA molecule, counter-ions, conductance versus length, and intrinsic resonant tunneling.
Numerical algorithms developed for carrier transport in nanoelectronic devices: recursive green functions, NEGF, and multiple sequential scattering
Quantitative simulations of carrier transport in physical systems that are of the size of a few nanometers require the use of quantum mechanical models at a very fundamental level.
Nanoelectronic device calculations from an atomistic point of view: empirical tight-binding models for semiconductor heterostructures
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Status of the nanoelectronic modeling tool (NEMO 1-D and 3-D) and its planned extension to spintronics
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