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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

High-efficiency GaAs concentrator space cells

High efficiency Al sub x Ga sub 1-x As/GaAs heteroface solar concentrator cells have been developed for space applications. The cells, which were grown using metalorganic chemical vapor deposition (MOCVD), have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as the p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm by 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C.

Werthen, J. G.↗
NASA NTRS1986

High-efficiency GaAs solar concentrator cells for space and terrestrial applications

High-efficiency Al(x)Ga(1-x)As/GaAs heteroface solar concentrator cells have been developed for both space and terrestrial applications. The cells, which were grown using metalorganic chemical vapor deposition, have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm x 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C. The terrestrial cells have a circular illuminated area 0.2 inches in diameter and are intended for use in a module which operates at 940 suns, AM1.5. These cells have shown a peak efficiency of 26 percent at 753 suns and over 25 percent at greater than 1000 suns.

Hamaker, H. C.↗
NASA NTRS1990

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Landis, Geoffrey A.↗
NASA NTRS1991

Improvements in contact resistivity and thermal stability of Au-contacted InP solar cells

Specific contact resistivities for as-fabricated Au contacts on n-p InP solar cells are typically in the 10(exp -3) ohm/sq cm range, but contact resistivities in the 10(exp -6) ohm/sq cm range can be obtained if the cells are heat treated at 400 C for a few minutes. This heat treatment, however, results in a dramatic drop in the open circuit voltage of the cell due to excessive dissolution of the emitter into the metallization. It was found that low values of contact resistivity can be secured without the accompanying drop in the open circuit voltage by adding Ga and In in the Au metallization. It is shown that Au contacts containing as little as 1 percent atomic Ga can suppress the reaction that takes place at the metal-InP interface during heat treatment, while exhibiting contact resistivity values in the low 10(exp -5) ohm/sq cm. Detailed explanations for the observed superior thermal stability of these contacts are presented.

Fatemi, Navid S.↗
NASA NTRS1991

Recent advancements in monolithic AlGaAs/GaAs solar cells for space applications

High efficiency, two terminal, multijunction AlGaAs/GaAs solar cells were reproducibly made with areas of 0.5 sq cm. The multiple layers in the cells were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE) on GaAs substrates in the n-p configuration. The upper AlGaAs cell has a bandgap of 1.93 eV and is connected in series to the lower GaAs cell (1.4 eV) via a metal interconnect deposited during post-growth processing. A prismatic coverglass is installed on top of the cell to reduce obscuration caused by the gridlines. The best 0.5 sq cm cell has a two terminal efficiency of 23.0 pct. at 1 sun, air mass zero (AM0) and 25 C. To date, over 300 of these cells were grown and processed for a manufacturing demonstration. Yield and efficiency data for this demonstration are presented. As a first step toward the goal of a 30 pct. efficient cell, a mechanical stack of the 0.5 sq cm cells described above, and InGaAsP (0.95 eV) solar cells was made. The best two terminal measurement to date yields an efficiency of 25.2 pct. AM0. This is the highest reported efficiency of any two terminal, 1 sun space solar cell.

Wickham, K. R.↗
NASA NTRS1992

Accelerator measurement of NaI response to medium energy neutrons and application to a satellite-borne spectrometer

We report on the response of a prototype detector to medium energy neutrons. The neutrons were produced by n-p scattering of a neutron beam on a hydrogen target. The measurements provide unique data on the efficiency and response of large NaI scintillators to neutrons in the energy range 36-709 MeV. We apply the results to the high-energy mode of the Gamma-Ray Spectrometer (GRS) on the Solar Maximum Mission satellite by estimating its efficiency for neutron detection. This estimate is compared to earlier Monte Carlo calculations of the GRS efficiency.

Dunphy, P. P.↗
NASA NTRS1992

Evaluation of high quantum efficiency silicon photodiodes for calibration in the 400 nm to 900 nm spectral region

The reflectance and internal quantum efficiency (QE) of three single-element photodiodes are determined using two different light-trapping devices. The QED-200 light trapping device which is based on inversion layer photodiodes exhibits the best performance within the short wavelengths of the visible spectrum (VIS), while the A-O device based on p-n photodiodes, performs best in the long wave VIS up to 950 nm. The combination of the two light-traps provides nearly 100 percent external QE coverage from 400 to 950 nm. The reflectances and internal QE were determined within this spectral range for three photodiodes: UV100, an inversion layer photodiode; X-UV100, a shallow diffused n-p photodiode; and 10DPI/SB, a blue-enhanced p-n photodiode.

Jorquera, Carlos↗
NASA NTRS1994

Advances in polycrystalline thin-film photovoltaics for space applications

Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical methods. Both laser and mechanical scribing operations are used to monolithically integrate (series interconnect) the individual cells into modules. Results will be presented at the cell and module development levels with a brief description of the test methods used to qualify these devices for space applications. The approach and development efforts are directed towards large-scale manufacturability of established thin-film, polycrystalline processing methods for large area modules with less emphasis on maximizing small area efficiencies.

Lanning, Bruce R.↗
NASA NTRS1995

Dominant takeover regimes for genetic algorithms

The genetic algorithm (GA) is a machine-based optimization routine which connects evolutionary learning to natural genetic laws. The present work addresses the problem of obtaining the dominant takeover regimes in the GA dynamics. Estimated GA run times are computed for slow and fast convergence in the limits of high and low fitness ratios. Using Euler's device for obtaining partial sums in closed forms, the result relaxes the previously held requirements for long time limits. Analytical solution reveal that appropriately accelerated regimes can mark the ascendancy of the most fit solution. In virtually all cases, the weak (logarithmic) dependence of convergence time on problem size demonstrates the potential for the GA to solve large N-P complete problems.

Noever, David↗
NASA NTRS1996

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, Basab↗
NASA NTRS1999

A Goal Seeking Strategy for Constructing Systems from Alternative Components

This paper describes a methodology to efficiently construct feasible systems then modify feasible systems to meet successive goals by selecting from alternative components, a problem recognized to be n-p complete. The methodology provides a means to catalog and model alternative components. A presented system modeling Structure is robust enough to model a wide variety of systems and provides a means to compare and evaluate alternative systems. These models act as input to a methodology for selecting alternative components to construct feasible systems and modify feasible systems to meet design goals and objectives. The presented algorithm's ability to find a restricted solution, as defined by a unique set of requirements, is demonstrated against an exhaustive search of a sample of proposed shuttle modifications. The utility of the algorithm is demonstrated by comparing results from the algorithm with results from three NASA shuttle evolution studies using their value systems and assumptions.

Valentine, Mark E.↗
NASA NTRS2000

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗
DOE OSTI2022

Thermoelectric coatings for waste heat recovery and photo-thermal power

An energy harvesting system for collecting energy from sources of thermal energy that exist in the environment and convert the energy to electricity. The system has N-P junctions mounted on the outer surface of a conduit, pipe or flue. A hot medium flows through the conduit, pipe or flue. The p-n junctions operate as thermoelectric power generators. Heat absorbed at the p-n junctions increases the kinetic energy of charge carriers causing migration of the charge carriers. This thermally-driven migration of charge carriers is used to drive an electrical current in an external circuit.

Farmer, Joseph C.↗
DOE OSTI2020

Materials Data on P3N5 by Materials Project

P3N5 crystallizes in the orthorhombic Imm2 space group. The structure is three-dimensional. there are two inequivalent P5+ sites. In the first P5+ site, P5+ is bonded to five N3- atoms to form PN5 square pyramids that share corners with four equivalent PN5 square pyramids, corners with two equivalent PN4 tetrahedra, and edges with two equivalent PN5 square pyramids. There is one shorter (1.72 Å) and four longer (1.75 Å) P–N bond length. In the second P5+ site, P5+ is bonded to four N3- atoms to form PN4 tetrahedra that share corners with four equivalent PN5 square pyramids and corners with two equivalent PN4 tetrahedra. There is two shorter (1.58 Å) and two longer (1.68 Å) P–N bond length. There are three inequivalent N3- sites. In the first N3- site, N3- is bonded in a distorted trigonal planar geometry to three equivalent P5+ atoms. In the second N3- site, N3- is bonded in a distorted trigonal planar geometry to three P5+ atoms. In the third N3- site, N3- is bonded in a bent 120 degrees geometry to two equivalent P5+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on P3N5 by Materials Project

P3N5 crystallizes in the monoclinic C2/c space group. The structure is three-dimensional. there are two inequivalent P5+ sites. In the first P5+ site, P5+ is bonded to four N3- atoms to form corner-sharing PN4 tetrahedra. There is two shorter (1.57 Å) and two longer (1.68 Å) P–N bond length. In the second P5+ site, P5+ is bonded to four N3- atoms to form a mixture of edge and corner-sharing PN4 tetrahedra. There are a spread of P–N bond distances ranging from 1.56–1.72 Å. There are three inequivalent N3- sites. In the first N3- site, N3- is bonded in a distorted trigonal planar geometry to three P5+ atoms. In the second N3- site, N3- is bonded in a bent 150 degrees geometry to two P5+ atoms. In the third N3- site, N3- is bonded in a linear geometry to two equivalent P5+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on PN2 by Materials Project

PN2 is quartz (alpha)-like structured and crystallizes in the orthorhombic P2_12_12_1 space group. The structure is three-dimensional. P5+ is bonded to four N+2.50- atoms to form corner-sharing PN4 tetrahedra. All P–N bond lengths are 1.61 Å. There are two inequivalent N+2.50- sites. In the first N+2.50- site, N+2.50- is bonded in a bent 150 degrees geometry to two equivalent P5+ atoms. In the second N+2.50- site, N+2.50- is bonded in a bent 150 degrees geometry to two equivalent P5+ atoms.

36 MATERIALS SCIENCE↗