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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1970

Research on variable threshold transistor storage systems

A fully integrated, electrically alterable, nonvolatile, nondestructive readout control memory was developed, using as storage elements metal-nitride-silicon variable threshold transistors. An optimum approach to such a memory was developed in which a three dimensional selection technique was used, both for read and write operations. Electrical isolation of writing and memory circuits was obtained by means of separate memory and write circuit chips. This method provided protection from voltage breakdowns, increased circuit flexibility, and greater ease of testing of interim and final circuit elements.

Wegener, H. A. R.↗
NASA NTRS1979

Development of non-volatile semiconductor memory

A 256 word by 8-bit random access memory chip was developed utilizing p channel, metal gate metal-nitride-oxide-silicon (MNOS) technology; with operational characteristics of a 2.5 microsecond read cycle, a 6.0 microsecond write cycle, 800 milliwatts of power dissipation; and retention characteristics of 10 to the 8th power read cycles before data refresh and 5000 hours of no power retention. Design changes were implemented to reduce switching currents that caused parasitic bipolar transistors inherent in the MNOS structure to turn on. Final wafer runs exhibited acceptable yields for a die 250 mils on a side. Evaluation testing was performed on the device in order to determine the maturity of the device. A fixed gate breakdown mechanism was found when operated continuously at high temperature.

Heikkila, W. W.↗
NASA NTRS1983

Compositional depth profile of a native oxide LPCVD MNOS structure using X-ray photoelectron spectroscopy and chemical etching

It is pointed out that there is no report of an unambiguous analysis of the composition and interfacial structure of MNOS (metal-nitride oxide semiconductor) systems, despite the technological importance of these systems. The present investigation is concerned with a study of an MNOS structure on the basis of a technique involving the use of X-ray photoelectron spectroscopy (XPS) with a controlled stopped-flow chemical-etching procedure. XPS is sensitive to the structure of surface layers, while stopped-flow etching permits the controlled removal of overlying material on a scale of atomic layers, to expose new surface layers as a function of thickness. Therefore, with careful analysis of observed intensities at measured depths, this combination of techniques provides depth resolution between 5 and 10 A. According to the obtained data there is intact SiO2 at the substrate interface. There appears to be a thin layer containing excess bonds to silicon on top of the SiO2.

Wurzbach, J. A.↗
NASA NTRS1984

An evaluation of the directed flow graph methodology

The applicability of the Directed Graph Methodology (DGM) to the design and analysis of special purpose image and signal processing hardware was evaluated. A special purpose image processing system was designed and described using DGM. The design, suitable for very large scale integration (VLSI) implements a region labeling technique. Two computer chips were designed, both using metal-nitride-oxide-silicon (MNOS) technology, as well as a functional system utilizing those chips to perform real time region labeling. The system is described in terms of DGM primitives. As it is currently implemented, DGM is inappropriate for describing synchronous, tightly coupled, special purpose systems. The nature of the DGM formalism lends itself more readily to modeling networks of general purpose processors.

Snyder, W. E.↗
NASA NTRS1985

The VLSI design of error-trellis syndrome decoding for convolutional codes

A recursive algorithm using the error-trellis decoding technique is developed to decode convolutional codes (CCs). An example, illustrating the very large scale integration (VLSI) architecture of such a decode, is given for a dual-K CC. It is demonstrated that such a decoder can be realized readily on a single chip with metal-nitride-oxide-semiconductor technology.

Reed, I. S.↗
NASA NTRS1987

A comparison of VLSI architecture of finite field multipliers using dual, normal or standard basis

Three different finite field multipliers are presented: (1) a dual basis multiplier due to Berlekamp; (2) a Massy-Omura normal basis multiplier; and (3) the Scott-Tavares-Peppard standard basis multiplier. These algorithms are chosen because each has its own distinct features which apply most suitably in different areas. Finally, they are implemented on silicon chips with nitride metal oxide semiconductor technology so that the multiplier most desirable for very large scale integration implementations can readily be ascertained.

Hsu, I. S.↗
NASA NTRS1986

The VLSI design of an error-trellis syndrome decoder for certain convolutional codes

A recursive algorithm using the error-trellis decoding technique is developed to decode convolutional codes (CCs). An example, illustrating the very large scale integration (VLSI) architecture of such a decode, is given for a dual-K CC. It is demonstrated that such a decoder can be realized readily on a single chip with metal-nitride-oxide-semiconductor technology.

Reed, I. S.↗
NASA NTRS1988

A comparison of VLSI architecture of finite field multipliers using dual, normal, or standard bases

Three different finite-field multipliers are presented: (1) a dual-basis multiplier due to Berlekamp; the Massey-Omura normal basis multiplier; and (3) the Scott-Tavares-Peppard standard basis multiplier. These algorithms are chosen because each has its own distinct features that apply most suitably in different areas. Finally, they are implemented on silicon chips with nitride metal oxide semiconductor technology so that the multiplier most desirable for VLSI implementation can readily be ascertained.

Hsu, I. S.↗
NASA NTRS1996

Single Transducer Ultrasonic Imaging Method that Eliminates the Effect of Plate Thickness Variation in the Image

This article describes a single transducer ultrasonic imaging method that eliminates the effect of plate thickness variation in the image. The method thus isolates ultrasonic variations due to material microstructure. The use of this method can result in significant cost savings because the ultrasonic image can be interpreted correctly without the need for machining to achieve precise thickness uniformity during nondestructive evaluations of material development. The method is based on measurement of ultrasonic velocity. Images obtained using the thickness-independent methodology are compared with conventional velocity and c-scan echo peak amplitude images for monolithic ceramic (silicon nitride), metal matrix composite and polymer matrix composite materials. It was found that the thickness-independent ultrasonic images reveal and quantify correctly areas of global microstructural (pore and fiber volume fraction) variation due to the elimination of thickness effects. The thickness-independent ultrasonic imaging method described in this article is currently being commercialized under a cooperative agreement between NASA Lewis Research Center and Sonix, Inc.

Roth, Don J.↗
NASA NTRS1998

An Infrared Spectroscopic and Density Functional Theoretical Investigation of the Reaction Products of Laser-Ablated Scandium and Titanium Atoms with Nitric Oxide

Laser-ablated Sc and Ti atoms have been reacted with NO during condensation in excess argon. Matrix infrared spectra show that the major products are the side bonded Sc[NO] species and the inserted NScO and NTiO molecules based on isotopic substitution (15NI6O and 15N18O) and DIFT calculations of isotopic frequencies, which provide a match for two modes in three isotopic modifications for each molecule. The NScO and NTiO molecules are nitride/oxides with M-O stretching modes only 46-88/cm below the diatomic metal oxides but M-N stretching modes 314-442/cm lower than the diatomic metal nitride molecules. The ScN, ScO, TiN, and TiO molecules are observed as decomposition products. Evidence is also presented for the nitrosyls ScNO and TiNO, the Sc[NO]+ cation, and the NTiO- anion.

Bauschlicher, Charles W., Jr.↗
NASA NTRS1995

Depth Measurements Using Alpha Particles and Upsettable SRAMs

A custom designed SRAM was used to measure the thickness of integrated circuit over layers and the epi-layer thickness using alpha particles and a test SRAM. The over layer consists of oxide, nitride, metal, and junction regions.

upsettable SRAMs↗
NASA NTRS2011

Carbon Nanofibers Synthesized on Selective Substrates for Nonvolatile Memory and 3D Electronics

A plasma-enhanced chemical vapor deposition (PECVD) growth technique has been developed where the choice of starting substrate was found to influence the electrical characteristics of the resulting carbon nanofiber (CNF) tubes. It has been determined that, if the tubes are grown on refractory metallic nitride substrates, then the resulting tubes formed with dc PECVD are also electrically conducting. Individual CNFs were formed by first patterning Ni catalyst islands using ebeam evaporation and liftoff. The CNFs were then synthesized using dc PECVD with C2H2:NH3 = [1:4] at 5 Torr and 700 C, and approximately equal to 200-W plasma power. Tubes were grown directly on degenerately doped silicon <100> substrates with resistivity rho approximately equal to 1-5 meterohm-centimeter, as well as NbTiN. The approximately equal to 200-nanometer thick refractory NbTiN deposited using magnetron sputtering had rho approximately equal to 113 microohm-centimeter and was also chemically compatible with CNF synthesis. The sample was then mounted on a 45 beveled Al holder, and placed inside a SEM (scanning electron microscope). A nanomanipulator probe stage was placed inside the SEM equipped with an electrical feed-through, where tungsten probes were used to make two-terminal electrical measurements with an HP 4156C parameter analyzer. The positive terminal nanoprobe was mechanically manipulated to physically contact an individual CNF grown directly on NbTiN as shown by the SEM image in the inset of figure (a), while the negative terminal was grounded to the substrate. This revealed the tube was electrically conductive, although measureable currents could not be detected until approximately equal to 6 V, after which point current increased sharply until compliance (approximately equal to 50 nA) was reached at approximately equal to 9.5 V. A native oxide on the tungsten probe tips may contribute to a tunnel barrier, which could be the reason for the suppressed transport at low biases. Currents up to approximately 100 nA could be cycled, which are likely to propagate via the tube surface, or sidewalls, rather than the body, which is shown by the I-V in figure (a). Electrical conduction via the sidewalls is a necessity for dc NEMS (nanoelectromechanical system) applications, more so than for the field emission applications of such tubes. During the tests, high conductivity was expected, because both probes were shorted to the substrate, as shown by curve 1 in the I-V characteristic in figure (b). When a tube grown on NbTiN was probed, the response was similar to the approximately equal to 100 nA and is represented by curve 2 in figure (b), which could be cycled and propagated via the tube surface or the sidewalls. However, no measureable currents for the tube grown directly on Si were observed as shown by curve 3 in figure (b), even after testing over a range of samples. This could arise from a dielectric coating on the sidewalls for tubes on Si. As a result of the directional nature of ion bombardment during dc PECVD, Si from the substrate is likely re-sputtered and possibly coats the sidewalls.

Kaul, Anupama B.↗
NASA NTRS1975

Evaluation of refractory-metal-clad uranium nitride and uranium dioxide fuel pins after irradiation for times up to 10 450 hours at 990 C

The effects of some materials variables on the irradiation performance of fuel pins for a lithium-cooled space power reactor design concept were examined. The variables studied were UN fuel density, fuel composition, and cladding alloy. All pins were irradiated at about 990 C in a thermal neutron environment to the design fuel burnup. An 85-percent dense UN fuel gave the best overall results in meeting the operational goals. The T-111 cladding on all specimens was embrittled, possibly by hydrogen in the case of the UN fuel and by uranium and oxygen in the case of the UO2 fuel. Tests with Cb-1Zr cladding indicate potential use of this cladding material. The UO2 fueled specimens met the operational goals of less than 1 percent cladding strain, but other factors make UO2 less attractive than low-density UN for the contemplated space power reactor use.

Bowles, K. J.↗
NASA NTRS1976

Friction and transfer behavior of pyrolytic boron nitride in contact with various metals

Sliding friction experiments were conducted with pyrolytic boron nitride in sliding contact with itself and various metals. Auger emission spectroscopy was used to monitor transfer of pyrolytic boron nitride to metals and metals to pyrolytic boron nitride. Results indicate that the friction coefficient for pyrolytic boron nitride in contact with metals can be related to the chemical activity of the metals and more particularly to the d valence bond character of the metal. Transfer was found to occur to all metals except silver and gold and the amount of transfer was less in the presence than in the absence of metal oxide. Friction was less for pyrolytic boron nitride in contact with a metal in air than in vacuum.

Buckley, D. H.↗