Stacking Order Engineering of Two-Dimensional Materials and Device Applications
Not provided.
Chemistry↗
SEARCH · Engineering Papers
Results for “Materials for Devices”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Key Device and Materials Specifications for a Repeater Enabled Quantum Internet
Not Available
Singh, Manish Kumar (ORCID:0000000221932689)↗
Characterization of ECRAM materials and devices
As the limits of Moore’s Law approaches, new computing paradigms are developing to breakthrough this bottleneck. One such computer architecture is neuromorphic computing, which models the brain. Electrochemical random-access memory (ECRAM) is a low power and energy efficient memory due to characteristics, such as in-memory compute, ion modulation of the channel conductance, and computation distribution with large scale array integration.
97 MATHEMATICS AND COMPUTING↗
Methods for producing and using perovskite materials and devices therefrom
The present disclosure describes solution methods for manufacturing perovskite halide films for use in solar cells. The methods include the use of additives that facilitate the formation of transitory, intermediate films that are later transformed into the final target perovskite halide films, such that the final films provide improved physical characteristics and operational performance.
14 SOLAR ENERGY↗
Accelerating machine learning using analogue materials memory devices and circuits.
Abstract not provided.
Li, Yiyang↗
ITRW: Formulating a Roadmap for WBG and UWBG Materials and Devices.
Abstract not provided.
Binder, Andrew↗
Simulating extreme environments using ion and electron beam irradiations for structural materials semiconductor devices and polymers.
Abstract not provided.
Young, Joshua Michael↗
Methods for producing and using perovskite materials and devices therefrom
The present disclosure describes solution methods for manufacturing perovskite halide films for use in solar cells. The methods include the use of additives that facilitate the formation of transitory, intermediate films that are later transformed into the final target perovskite halide films, such that the final films provide improved physical characteristics and operational performance.
Zhu, Kai↗
Organic electroluminescent materials and devices
A compound of Formula X wherein ring A is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; ring B is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; and at least one of ring A or ring B is present, and the hash line represents ring A fused to ring N—W 1 —W 3 and ring B fused to ring N—W 4 —W 6 ; W 1 , W 2 , W 3 , W 4 , W 5 , and W 6 are independently selected from CR 1 or N; Z is selected from CR Z or N; and Y is selected from a group consisting of C(R 2 ) 2 , B(R 2 ) 2 , Al(R 2 ) 2 , Si(R 2 ) 2 , and Ge(R 2 ) 2 . An optoelectronic device selected from the group consisting of a photovoltaic device, a photodetector device, a photosensitive device, and an OLED, the optoelectronic device including an organic layer that comprises a compound of Formula X. A consumer product that includes the optoelectronic device.
Thompson, Mark E.↗
Organic electroluminescent materials and devices
A compound of Formula X wherein ring A is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; ring B is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; and at least one of ring A or ring B is present, and the hash line represents ring A fused to ring N—W 1 —W 2 and ring B fused to ring N—W 3 —W 4 ; W 1 , W 2 , W 3 , W 4 , W 5 , and W 6 are independently selected from CR 1 or N; Z is selected from CR Z or N; and Y is selected from a group consisting of C(R 2 ) 2 , B(R 2 ) 2 , Al(R 2 ) 2 , Si(R 2 ) 2 , and Ge(R 2 ) 2 . An optoelectronic device selected from the group consisting of a photovoltaic device, a photodetector device, a photosensitive device, and an OLED, the optoelectronic device including an organic layer that comprises a compound of Formula X. A consumer product that includes the optoelectronic device.
Thompson, Mark E.↗
High Throughput Data-Driven Design of Laser-Crystallized 2D MoS 2 Chemical Sensors: A Demonstration for NO 2 Detection
High throughput characterization and processing techniques are becoming increasingly necessary to navigate multivariable, data-driven design challenges for sensors and electronic devices. For two-dimensional materials, device performance is highly dependent upon a vast array of material properties including the number of layers, lattice strain, carrier concentration, defect density, and grain structure. In this work, laser crystallization was used to locally pattern and transform hundreds of regions of amorphous MoS 2 thin films into 2D 2H-MoS 2 . Here a high throughput Raman spectroscopy approach was subsequently used to assess the process-dependent structural and compositional variations for each illuminated region, yielding over 6000 distinct nonresonant, resonant, and polarized Raman spectra. The rapid generation of a comprehensive library of structural and compositional data elucidated important trends between structure–property processing relationships involving laser-crystallized MoS 2 , including the relationships between grain size, grain orientation, and intrinsic strain. Moreover, extensive analysis of structure/property relationships allowed for intelligent design and evaluation of major contributions to device performance in MoS 2 chemical sensors. In particular, it is found that NO 2 sensor performance is strongly dependent on the orientation of the MoS 2 grains relative to the crystal plane.
36 MATERIALS SCIENCE↗
Thermoelectric materials based on tetrahedrite structure for thermoelectric devices
Thermoelectric materials based on tetrahedrite structures for thermoelectric devices and methods for producing thermoelectric materials and devices are disclosed. The thermoelectric device has a pair of conductors and a p-type thermoelectric material disposed between the conductors. The thermoelectric material is at least partially formed of a hot pressed high energy milled tetrahedrite formed of tetrahedrite ore and pure elements to form a tetrahedrite powder of Cu12-xMxSb4S13 disposed between the conductors, where M is at least one of Zn and Fe.
36 MATERIALS SCIENCE↗
Thermoelectric materials based on tetrahedrite structure for thermoelectric devices
Thermoelectric materials based on tetrahedrite structures for thermoelectric devices and methods for producing thermoelectric materials and devices are disclosed.
14 SOLAR ENERGY↗
Methods, materials systems, and devices for inhibiting infiltration and penetration of molten salts into solid materials
Methods, materials systems, and devices for inhibiting the infiltration and penetration of molten salts into solid materials, including porous materials at temperatures above the solidus temperature of the molten salt. The methods, materials systems, and devices utilize a non-wetted solid that is introduced into pores having entrances at an exterior surface of a porous solid material adapted to contact the molten salt.
Sandhage, Kenneth Henry↗
Advanced Functional Materials ZnO@ZIF-8 Heterostructures for Neuromorphic Synaptic Devices
Metal-Organic Frameworks have shown great promise for memristive synaptic devices because of their adaptable electrical properties and inherent porosity, which help in efficient ion transport and storage of functional molecules. However, the limited conductivity and sensitivity to moisture associated with most MOF materials hinder their use in electronic applications. In this study, MOFs derived from metabolites have been synthesized, using ZnO as a self-sacrificial metallic source to grow Zeolitic Imidazolate Framework-8 (ZIF-8), forming ZnO@ZIF-8 heteronanostructures for neuromorphic applications. These hybrids ZnO@ZIF-8 act as promising candidates for advanced electronic applications. Through systematic investigations, including a comparison of ZnO@ZIF-8 bilayer devices with ZnO single-layer counterparts, a significant discovery emerged. The bilayer synaptic devices outperformed their single layer counterparts in electrical characteristics, as evidenced by Current-Voltage curve analysis and Long-Term Potentiation/Long Term Depression (LTP/LTD) measurements. Additionally, the ZnO layer thickness (10, 30, 50 nm) has been emphasized and the effects of annealing at 300°C in a vacuum were carefully studied for Neuromorphic Synaptic Devices. Remarkably, the 10 nm ZnO layer exhibited the lowest set voltage and a consistent On/Off ratio. This work marks a significant advancement in understanding bilayer synaptic devices, highlighting the crucial role of ZIF-8 in shaping the future of neuromorphic systems
Kolleboyina, Jayaramulu↗
New Directions for Thermoelectrics: A Roadmap from High‐Throughput Materials Discovery to Advanced Device Manufacturing
Thermoelectric materials, which can convert waste heat into electricity or act as solid‐state Peltier coolers, are emerging as key technologies to address global energy shortages and environmental sustainability. However, discovering materials with high thermoelectric conversion efficiency is a complex and slow process. The emerging field of high‐throughput material discovery demonstrates its potential to accelerate the development of new thermoelectric materials combining high efficiency and low cost. The synergistic integration of high‐throughput material processing and characterization techniques with machine learning algorithms can form an efficient closed‐loop process to generate and analyze broad datasets to discover new thermoelectric materials with unprecedented performances. Meanwhile, the recent development of advanced manufacturing methods provides exciting opportunities to realize scalable, low‐cost, and energy‐efficient fabrication of thermoelectric devices. This review provides an overview of recent advances in discovering thermoelectric materials using high‐throughput methods, including processing, characterization, and screening. Advanced manufacturing methods of thermoelectric devices are also introduced to realize the broad impacts of thermoelectric materials in power generation and solid‐state cooling. In the end, this article also discusses the future research prospects and directions.
Song, Kaidong↗
Origins of heat transport anisotropy in MoTe2 and other bulk van der Waals materials
Knowledge of how heat flows anisotropically in van der Waals (vdW) materials is crucial for thermal management of emerging 2D materials devices and design of novel anisotropic thermoelectric materials. Despite the importance, anisotropic heat transport in vdW materials is yet to be systematically studied and is often presumably attributed to anisotropic speeds of sound in vdW materials due to soft interlayer bonding relative to covalent in-plane networks of atoms. In this work, we investigate the origins of the anisotropic heat transport in vdW materials, through time-domain thermoreflectance (TDTR) measurements and first-principles calculations of anisotropic thermal conductivity of three different phases of MoTe 2 . MoTe 2 is ideal for the study due to its weak anisotropy in the speeds of sound. We find that even when the speeds of sound are roughly isotropic, the measured thermal conductivity of MoTe 2 along the c-axis is 5–8 times lower than that along the in-plane axes. We derive meaningful characteristic heat capacity, phonon group velocity, and relaxation times from our first principles calculations for selected vdW materials (MoTe 2 , BP, h-BN, and MoS 2 ), to assess the contributions of these factors to the anisotropic heat transport. Interestingly, we find that the main contributor to the heat transport anisotropy in vdW materials is anisotropy in heat capacity of the dominant heat-carrying phonon modes in different directions, which originates from anisotropic optical phonon dispersion and disparity in the frequency of heat-carrying phonons in different directions. Further, the discrepancy in frequency of the heat-carrying phonons also leads to ~2 times larger average relaxation times in the cross-plane direction, and partially explains the apparent dependence of the anisotropic heat transport on the anisotropic speeds of sound. This work provides insight into understanding of the anisotropic heat transport in vdW materials.
36 MATERIALS SCIENCE↗
Density drop at the divertor target in the prototype material plasma exposure eXperiment (Proto-MPEX)
The steady-state linear device “Material Plasma Exposure eXperiment” (MPEX) is currently under construction at Oak Ridge National Laboratory with the goal of enabling Plasma-Material Interaction studies at future fusion reactor relevant plasma conditions. In this work, a newly in-house developed hybrid Particle-In-Cell code-PICOS++ is applied to understand the experimental results obtained from the prototype of MPEX referred to as the “Proto-MPEX” during its helicon-only and helicon with ion cyclotron resonance heating (ICRH) experiments. This study explains the physics of the experimentally observed plasma density-drop at the divertor target in Proto-MPEX device during ICRH. In contrast to previous work on ICRH in MPEX, this study demonstrates that the mirror force plays a central role in the Proto-MPEX plasma transport during ICRH, which has new features not previously explored. Force balance analyses reveal that the temperature anisotropy produced by ICRH leads to a significant increase in the mirror force downstream of the resonance where the magnetic field is diverging. This force accelerates ions toward the target and leads to a drop in plasma density to ensure conservation of particle flux. Simulations with ICRH where the magnetic field divergence downstream of the resonance has been removed, do not produce plasma acceleration nor density drop at the target despite efficient ion heating at the resonance. Moreover, simulation results demonstrate that for a given ICRH power, lowering the source rate produces ions with increased perpendicular energy which interact with the mirror force to produce higher plasma acceleration which increases the strength of the density-drop at the target. The strength of the density drop appears to reach an asymptotic limit at a certain threshold ICRH power. Simulations show that this threshold power increases with increasing particle source rate.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗