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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Unconventional unidirectional magnetoresistance in heterostructures of a topological semimetal and a ferromagnet

Unidirectional magnetoresistance (UMR) in a bilayer heterostructure, consisting of a spin-source material and a magnetic layer, refers to a change in the longitudinal resistance on the reversal of magnetization and originates from the interaction of non-equilibrium spin accumulation and magnetization at the interface. Since the spin polarization of an electric-field-induced non-equilibrium spin accumulation in conventional spin-source materials is restricted to be in the film plane, the ensuing UMR can only respond to the in-plane component of magnetization. However, magnets with perpendicular magnetic anisotropy are highly desired for magnetic memory and spin-logic devices, whereas the electrical read-out of perpendicular magnetic anisotropy magnets through UMR is critically missing. Here, in this study, we report the discovery of an unconventional UMR in the heterostructures of a topological semimetal (WTe 2 ) and a perpendicular magnetic anisotropy ferromagnetic insulator (Cr 2 Ge 2 Te 6 ), which allows to electrically read the up and down magnetic states of the Cr 2 Ge 2 Te 6 layer through longitudinal resistance measurements.

Kao, I-Hsuan [Carnegie Mellon Univ., Pittsburgh, P↗
DOE OSTI2025

Off-state magnetoresistance in long-channel germanium Schottky-barrier MOSFETs

An increasing magnetic field perpendicular to an undoped semiconductor surface at low temperature is known to strengthen the binding of localized electrons to stationary ions, as the wavefunction's tails evolve from exponential to Gaussian. It is also known that application of a high bias voltage to a depleted semiconductor can liberate bound charge and induce a large drop in electrical resistance. We connect these established results to experimental electrical transport measurements on off-state germanium Schottky-barrier metal–oxide–semiconductor field-effect transistor (MOSFETs) with an aluminum oxide insulating dielectric and platinum germanide contacts. We make measurements at the three distinct orientations of the magnetic field with respect to the substrate and the current. At 6 K, we observe sharp attenuation of current by more than 2 orders of magnitude, within 60 mT, at a crossover magnetic field perpendicular to the substrate. A 1 T magnetic field attenuates the current by more than 4 orders of magnitude. The strength of the attenuation and the value of the crossover field are controlled by both the gate–source and drain–source voltages. The attenuation is much weaker when the magnetic field is parallel to the current. Finally, we orient the magnetic field parallel to the substrate, but perpendicular to the current, allowing us to distinguish charge hopping at the oxide interface from charge hopping in the bulk. In conclusion, this large off-state magnetoresistance can be exploited for cryogenic magnetic- and photo-detection, and for high-bias, low-leakage MOSFETs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Emergent ferromagnetism and unusual irreversible magnetoresistance in an intercalated van der Waals antiferromagnet

Orthorhombic air-stable two-dimensional (2D) antiferromagnet (AFM) CrSBr has attracted much research interest lately thanks to its rich magnetic behaviors together with its remarkable electronic, excitonic, and polaritonic properties. Here, we report a reliable electrochemical intercalation method by inserting large tetrabutylammonium (TBA + ) ions into CrSBr layers. Magnetically, such intercalation efficiently suppresses the interlayer AFM and induces a ferromagnetic (FM) order with a much-enhanced transition temperature up to 200 K, nearly 70 K higher than the AFM onset of 132 K in pristine CrSBr. Electronically, the TBA + intercalation not only increases the electric conductivity of CrSBr, which is further enhanced by magnetic fields, but also introduces a giant negative irreversible magnetoresistance. This work demonstrates the tunable magnetic and electronic properties of CrSBr as well as their interplay, paving the way for advanced spintronic and magnetic memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Incommensurate Magnetism Drives Singular Angular Magnetoresistance in the Magnetic Weyl Semimetal CeAlGe

Here, we demonstrate that a multi-𝐤 incommensurate magnetic state in the Weyl semimetal CeAlGe gives rise to a singular angular magnetoresistance (SAMR), which is an electrical transport signature capable of detecting magnetic field direction with exceptional precision. In contrast, its sister compound CeAlSi is devoid of both multi-𝐤 order and SAMR. We reveal that both phenomena appear upon 57% Ge substitution in CeAlSi 1−𝑥⁢ Ge 𝑥 and coincide with electronic structure changes that soften the single-ion in-plane anisotropy and enhance Weyl-mediated magnetic interactions. These results unveil a remarkable connection between band topology, electronic transport, and collective magnetism in Weyl semimetals.

Yao, Xiaohan [Boston College, Chestnut Hill, MA (U↗
DOE OSTI2025

Electronic structure complexity and extremely large magnetoresistance in antiferromagnetic semimetal SmAgSb 2

SmAgSb 2 , a layered magnetic semimetal in the tetragonal 𝑅⁢𝑇⁢ Sb 2 family (𝑅 = Y, Sc, rare earth; 𝑇 = transition metal), is known to exhibit extremely large magnetoresistance (XMR) below its antiferromagnetic (AFM) transition temperature. Here, in this work, we present a comprehensive investigation combining magnetotransport measurements, density functional theory calculations accounting for electron correlation, and angle-resolved photoemission spectroscopy. Our results reveal a complex electronic structure characterized by a multiband Fermi surface and intricate magnetic ground states. We demonstrate that simple two-band models, previously employed in the literature, fail to consistently describe the observed transport phenomena. Notably, we report an XMR of approximately 25200% at 2 K under a 14 T magnetic field, significantly exceeding earlier reports for this material family and rivaling the performance of prominent nonmagnetic XMR systems. This pronounced enhancement below 𝑇 𝑁 suggests that the XMR originates from a combination of multiband electron-hole compensation and enhanced magnetic scattering in this correlated AFM semimetal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Large negative magnetoresistance in the off-stoichiometric topological semimetal PrSb x Te 2- x

Magnetic topological materials LnSbTe (Ln = lanthanide) have attracted intensive attention because of the presence of interplay between magnetism, topological, and electron correlations depending on the choices of magnetic Ln elements. Varying Sb and Te composition is an efficient approach to control structural, magnetic, and electronic properties. Here we report the composition-dependent properties in PrSb x Te 2-x . We identified the tetragonal-to-orthorhombic structure transitions in this material system, and very large negative magnetoresistance in the x = 0.3 composition, which might be ascribed to the coupling between magnetism and transport. Such unusual magnetotransport enables PrSb x Te 2-x topological materials as a promising platform for device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1978

Optical, spin-resonance, and magnetoresistance studies of /tetrathiatetracene/2/iodide/3 - The nature of the ground state

A recent investigation in which Isett and Perez-Albuerne (1977) found that (tetrathiatetracene)2(iodine)3 is a stable organic metal down to 3.3 K is of considerable interest. In view of the diversity of suggestions made regarding this compound, measurements, were made of its electrical, magnetic, and optical properties. The results obtained indicate a metallic state at high temperatures, but also support a nonmetallic state at temperatures below 30 K. At 20-30 K, a metal-to-insulator phase transition occurs. This is indicated by the onset of a large and positive magnetoresistance, the leveling off in the temperature dependence of the ESR linewidth, and by recent derivative analysis of the electrical conductivity in this region. The investigated compound represents an interesting one-dimensional electronic system in which it may be possible to study the combined effects of disorder and interchain coupling on charge transport processes.

Somoano, R. B.↗
NASA NTRS1986

Anticorrelation of Shubnikov-deHaas amplitudes and negative magnetoresistance magnitudes in intercalated pitch based graphite fibers

In pitch based carbon fibers at low temperatures, simultaneous presence of a negative magnetoresistance and the Shubnikov-deHaas effect are found. The strengths of these effects correlate inversely. These results can be understood in terms of the amount of order vs disorder in the fiber, as described by Guigon and Oberlin from structural studies.

Woollam, John A.↗
NASA NTRS1992

Intermodulation in the oscillatory magnetoresistance of a two-dimensional electron gas

The oscillatory magnetoresistance wave form of a 2-D electron gas shows multiple structures when two subbands are populated. In addition to high-field oscillations at a frequency equal to the sum of the two frequencies corresponding to the concentrations of the subbands, and to a superposition at intermediate fields, we observed oscillations at the difference frequency at low fields and higher temperatures. The field range at which the frequency difference is observed increases with increasing temperature. The crossover from superposition to frequency difference is accompanied by a beat. Similar beats, whose field location shows identical temperature dependence, can be observed in data obtained by other groups on different structures. The various components of the wave form can be attributed to different phase relations between the diagonal and off-diagonal elements of the conductivity tensor. It is shown how the intermodulation term, when inserted into the extended oscillatory equation, can give rise to all three structures.

Schacham, S. E.↗
NASA NTRS1992

Intermodulation in the oscillatory magnetoresistance of a two-dimensional electron gas

The oscillatory magnetoresistance wave form of a 2-D electron gas shows multiple structures when two subbands are populated. In addition to high-field oscillations at a frequency equal to the sum of the two frequencies corresponding to the concentrations of the subbands, and to a superposition at intermediate fields, we observed oscillations at the difference frequency at low fields and higher temperatures. The field range at which the frequency difference is observed increases with increasing temperature. The crossover from superposition to frequency difference is accompanied by a beat. Similar beats, whose field location shows identical temperature dependence, can be observed in data obtained by other groups on different structures. The various components of the wave form can be attributed to different phase relations between the diagonal and off-diagonal elements of the conductivity tensor. It is shown how the intermodulation term, when inserted into the extended oscillatory equation, can give rise to all three structures.

Schacham, S. E.↗
NASA NTRS1995

Angular dependence of critical current density and magnetoresistance of sputtered high-T(sub c)-films

The angular dependence of the critical current density and the magnetoresistance of high-T(sub c)-films in high and low magnetic fields and for different temperatures were measured to investigate the flux pinning and the superconducting properties. A comparison of the results for the different superconductors shows their increasing dependence on the angle Theta between the magnetic field and the c-axis of the film due to the anisotropy of the chosen superconductor. Furthermore the influence of the current direction to the Theta-rotation plane is discussed.

Geerkens, A.↗
NASA NTRS2001

A Magnetoresistive Heat Switch for the Continuous ADR

In compensated elemental metals at low temperature, a several Tesla field can suppress electronic heat conduction so thoroughly that heat is effectively carried by phonons alone. In approximately one mm diameter single crystal samples with impurity concentrations low enough that electron conduction is limited by surface scattering, the ratio of zerofield to high-field thermal conductivity can exceed ten thousand. We have used this phenomenon to build a compact, solid-state heat switch with no moving parts and no enclosed fluids. The time scale for switching states is limited by time scale for charging the magnet that supplies the controlling field. Our design and fabrication techniques overcome the difficulties associated with manufacturing and assembling parts from single crystal tungsten. A clear disadvantage of the magnetoresistive switch is the mass and complexity of the magnet system for the controlling field. We have discovered a technique of minimizing this mass and complexity, applicable to the continuous adiabatic demagnetization refrigerator.

Canavan, E. R.↗