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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Mitigating challenges in aberration-corrected electron-beam lithography on electron-opaque substrates

Aberration-corrected electron-beam lithography (AC-EBL) using ultra-thin electron transparent membranes has achieved single-digit nanometer resolution in two widely used electron-beam resists: poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane. On the other hand, AC-EBL implementation on thick, electron-opaque substrates is appealing for conventional top-down fabrication of quantum devices with nanometer-scale features. To investigate the performance of AC-EBL on thick substrates, we measured the lithographic point spread function of a 200 keV aberration-corrected scanning transmission electron microscope by defining both positive and negative patterns in PMMA thin films, spin-cast on thick SiO 2 /Si substrates. We present the problems encountered during pre-exposure beam focusing and discuss methods to overcome them. In addition, applying some of these methods using commercial 50 nm thick SiN X membranes with thick Si support frames, we printed arrays of holes in PMMA with pitches around 26 nm on SiN X /Si substrates with increasing Si thickness. Here, our results show that proximity effects from even 50 nm thick SiN X membranes limit hole arrays to 20 nm pitch; however, down to this limit, the effect of the substrate thickness on the pattern quality is minimal. These results highlight the need for novel resists less susceptible to proximity effects, or resists which can be used directly, after development, as the dielectric material in periodic gates in 2D quantum devices.

2D quantum devices↗
DOE OSTI2021

Facet Suppression in (100) GaAs Spalling via Use of a Nanoimprint Lithography Release Layer

Controlled spalling is an emerging technique developed for fast, scalable wafer reuse, but for the commonly used (100) GaAs substrate system, the process leaves large facets ranging from 5-10 µm on the wafer surface. Removing them for wafer reuse requires a costly re-polishing step that limits the cost savings that can be achieved with spalling as a wafer reuse technique. In this study, we investigate facet suppression in spalling of (100) GaAs by redirecting the fracture front along features created by buried nanoimprint lithography (NIL)-patterned SiO 2 . We show successful facet suppression using patterns that result in favorable fracture along the SiO 2 /GaAs interface. The results from this work show NIL patterned interlayers are a promising method for faceting suppression in (100) GaAs spalling.

controlled spalling↗
DOE OSTI2023

Effects of Focused Ion Beam Lithography on La 2– x Sr x CuO 4 Single Crystals

Focused ion beam (FIB) milling is a mask-free lithography technique that allows the precise shaping of 3D materials on the micron and sub-micron scale. The recent discovery of electronic nematicity in La 2–x Sr x CuO 4 (LSCO) thin films triggered the search for the same phenomenon in bulk LSCO crystals. With this motivation, we have systematically explored FIB patterning of bulk LSCO crystals into micro-devices suitable for longitudinal and transverse resistivity measurements. We found that several detrimental factors can affect the result, ultimately compromising the possibility of effectively using FIB milling to fabricate sub-micrometer LSCO devices, especially in the underdoped regime.

36 MATERIALS SCIENCE↗
DOE OSTI2026

TCF Base Technology-Specific Final Report: Negative Cracked Film Lithography for PERC CdTe

NLR worked with the world's leading thin-film photovoltaic manufacturer - First Solar, an American company - to develop electrical contacting methods that improve the power conversion efficiency of First Solar's cells by 0.5% absolute. We met this milestone but contrary to our hypothesis, these performance gains are not passivation (PERC)-based. Instead, we identified another mechanism by which our micropatterned Al 2 O 3 contacts improve efficiency. Using the results of this project, we will adapt NLR's cracked film lithography intellectual property (IP) toward the application we identified, which is a new route to commercialization.

14 SOLAR ENERGY↗
DOE OSTI2021

Cost and Time Effective Lithography of Reusable Millimeter Size Bone Tissue Replicas With Sub‐15 nm Feature Size on A Biocompatible Polymer

Abstract The ability to replicate the microenvironment of biological tissues creates unique biomedical possibilities for stem cell applications. Current fabrication methods are limited by either the control on feature size and shape, or by the throughput and size of the replicas. Here, a novel platform is reported that combines thermal scanning probe lithography (tSPL) with innovative methodologies for the low‐cost and high‐throughput nanofabrication of large area quasi‐3D bone tissue replicas with high fidelity, sub‐15 nm lateral precision, and sub‐2 nm vertical resolution. This bio‐tSPL platform features a biocompatible polymer resist that withstands multiple cell culture cycles, allowing the reuse of the replicas, further decreasing costs and fabrication times. The as‐fabricated replicas support the culture and proliferation of human induced mesenchymal stem cells, which display broad therapeutic and biomedical potential. Furthermore, it is demonstrated that bio‐tSPL can be used to nanopattern the bone tissue replicas with amine groups, for subsequent tissue‐mimetic biofunctionalization. The achieved level of time and cost‐effectiveness, as well as the cell compatibility of the replicas, make bio‐tSPL a promising platform for the production of tissue‐mimetic replicas to study stem cell‐tissue microenvironment interactions, test drugs, and ultimately harness the regenerative capacity of stem cells and tissues for biomedical applications.

Liu, Xiangyu↗
DOE OSTI2020

Automated detection of part quality during two-photon lithography via deep learning

Two-photon lithography (TPL) is an additive manufacturing technique for fabricating three-dimensional objects with nanoscale features. A main challenge of TPL is the routine and labor-intensive task of finding suitable light dosage parameters, i.e. writing speed and laser intensity that induce photo-polymerization within a wide variety of candidate photo-curing polymers. Another challenge is the monitoring required during fabrication. In this work, we apply machine learning (ML) models to accelerate the process of identifying optimal light dosage parameters and automate the detection of part quality. We curate TPL videos of different parts fabricated under a range of light dosage parameters using different resins and train spatial-temporal ML models on this data. Our results show that ML models can detect TPL part quality with a 95.1% accuracy in milliseconds. We also evaluate classification failures and identify two operating modes: parameter optimization and part quality detection. Last but not least, we publicly release this labelled dataset so that it may serve as a useful benchmark to the community. Our approach to process optimization and part quality detection addresses important aspects of TPL industrialization, is applicable beyond TPL and should benefit other additive manufacturing techniques with similar barriers to operating at industrial scale.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is critical for sub-1 nm technology nodes but remains constrained by inherent trade-offs among resolution, line-edge roughness (LER), and sensitivity. Stochastic effects originating from photon shot noise, low-energy secondary electron blur, and the random distribution of resist components further limit its advancement toward high numerical-aperture (NA, NA = 0.55) and hyper-NA (NA ≥0.75) EUVL. While the optimization of spin-on chemically amplified resists (CARs) continues, metal-oxide resists (MORs) have emerged as strong candidates for next-generation EUVL by incorporating metals with high EUV absorption coefficients, which enhances both resist sensitivity and etch resistance during pattern transfer. Besides spin-coating, recent advances in vapour-phase techniques, such as vapour-phase infiltration (VPI), chemical vapour deposition (CVD), and molecular atomic layer deposition (MALD), offer promising pathways to achieve new resist platforms, such as dry resists, that satisfy the stringent thickness and uniformity requirements of next-generation EUVL. These methods enable the direct incorporation of metal species into existing resist matrices or the formation of hybrid inorganic–organic resist platforms, thereby improving film uniformity, etch durability, and pattern fidelity while mitigating stochastic defects. This review highlights the latest advancements in vapour-phase-synthesized EUV resists, emphasizing material design, lithographic performance, and the underlying exposure mechanisms. Although still emerging, vapour-phase strategies are paving the way for an all-dry integration framework that could improve EUV patterning workflows and meet the demands of future technology nodes.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Suppressing proximity effects during rapid serial two-photon lithography through tuning of reaction–diffusion kinetics

The ability of two-photon lithography (TPL) to print deterministic nanoporous 3D structures is highly valuable for many applications. However, it is challenging to print such structures rapidly due to the proximity effects that cause closely spaced features to enlarge and merge. A key challenge is the limited understanding of the origins and spatiotemporal dynamics of the long-range proximity effects that extend beyond the optical focal spot. Here, we empirically investigate these proximity effects in serial TPL using custom-made acrylate-based photoresists. We demonstrate that the complex spatiotemporal dynamics of the proximity effects can be explained through the kinetics of the reaction–diffusion photopolymerization mechanisms that underlie the curing process. Specifically, we show that the proximity effects arise due to comparable timescales of reaction and diffusion of oxygen. Furthermore, we demonstrate that long-range proximity effects can be suppressed by introducing phenolic inhibitors, which reduce oxygen consumption through non-inhibiting side reactions and promote faster termination of curing reactions. These insights enabled improving the linewidths from >400 to 260 nm during printing of nanoporous 3D woodpiles at scanning speeds of 50 mm s −1 . Thus, the knowledge generated here can be applied to deterministically tune the proximity effects and enable rapid printing of high-resolution nanoporous 3D structures.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Multi-diagnostic characterization of laser-produced tin plasmas for EUV lithography

We present a comprehensive characterization of laser-produced tin (Sn) plasmas relevant to extreme ultraviolet (EUV) lithography using a multi-diagnostic suite integrated into the new experimental platform, “SparkLight.” Tin plasmas are generated by irradiating a continuously moving tin-coated wire with laser pulses (1064 nm, 10 ns, up to 5.7 × 10 10 W/cm 2 ) and probed via coherent Thomson scattering, laser interferometry, and EUV emission spectroscopy. Thomson scattering measurements reveal electron temperatures and densities that decay with distance from the target. Densities derived from Thomson scattering are cross-validated against laser interferometry, showing excellent agreement. Correlating the results of these laser diagnostics with spatially resolved EUV spectroscopy suggests that the bulk of useful EUV emission originates within 150 μm of the target and is generated under suboptimal plasma conditions. This work demonstrates a practical integrated approach for plasma characterization in EUV source development.

Musikhin, S. [Princeton Plasma Physics Laboratory ↗
DOE OSTI2020

Demonstration of a ring-FEL as an EUV lithography tool

In this work, we present the required structure and function of a ring-FEL as a radiation source for extreme ultraviolet radiation lithography (EUVL). A 100 m-long straight section that conducts an extremely low emittance beam from a fourth-generation storage ring can increase the average power at 13.5 nm wavelength to up to 1 kW without degrading the beam in the rest of the ring. Here, simulation results for a ring-FEL as a EUVL source are described.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2022

Surface Heater Fabrication Using Micro-Lithography for Transpiration Cooling Heat Transfer Coefficient Measurements

Abstract Transpiration cooling is able to provide more uniform coolant coverage than film cooling to effectively protect the component surface from contacting the hot gas. Due to numerous coolant ejection outlets within a small area at the target surface, the experimental thermo-fluid investigation on transpiration cooling becomes a significant challenge. Two classic methods to investigate film cooling, the steady-state foil heater method and the transient thermography technique, fail for transpiration cooling because the foil heater would block numerous coolant outlets, and the semi-infinite solid conduction model no longer holds for porous plates. In this study, a micro-lithography method to fabricate a silver coil pattern on top of the additively manufactured polymer porous media as the surface heater was proposed. The circuit was deliberately designed to cover the solid surface in a combination of series connection, and parallel connection to ensure the power in each unit cell area at the target surface was identical. With uniform heat flux generation, the steady-state tests were conducted to obtain distributions of a pair of parameters, adiabatic cooling effectiveness, and heat transfer coefficient (HTC). The results showed that the adiabatic cooling effectiveness could reach 0.65 with a blowing ratio lower than 0.5. Meanwhile, the heat transfer coefficient ratio (hf/h0) of transpiration cooling was close to 1 with a small blowing ratio at 0.125. A higher HTC ratio was observed for smaller pitch-to-diameter cases due to more turbulence intensity generated at the target surface.

Engineering↗
DOE OSTI2022

Technical and personal remembrances of David A. Shirley in studies of surface magnetism, photoelectron spectroscopy, EUV lithography, and hydrogen storage

This article describes the influence of Professor David A. Shirley on the research science of one of his Ph.D. students in the diverse areas of surface magnetism, x-ray photoelectron spectroscopy (XPS), spin-resolved XPS (SRXPS), extreme ultraviolet (EUV) lithography, and hydrogen storage materials science. Examples are given from the author's work on Cr(001) surface magnetism, XPS, and SRXPS studies of multiplet-splitting in core-level photoemission from Fe. In addition, Dave's influence in understanding the radiation-induced deposition of carbon on EUV optics is described, along with the use of XPS in deciphering how hydrogen storage materials are modified by repeated hydrogen adsorption/desorption cycling. The current status of these particular topics is briefly summarized. These technical remembrances are combined with some fond personal stories about Dave, in recognition of his passing on March 29, 2021.

Klebanoff, L. E.↗
DOE OSTI2022

Volumetric additive manufacturing of silica glass with microscale computed axial lithography

Glass is increasingly desired as a material for manufacturing complex microscopic geometries, from the micro-optics in compact consumer products to microfluidic systems for chemical synthesis and biological analyses. As the size, geometric, surface roughness, and mechanical strength requirements of glass evolve, conventional processing methods are challenged. We introduce microscale computed axial lithography (micro-CAL) of fused silica components, by tomographically illuminating a photopolymer-silica nanocomposite that is then sintered. We fabricated three-dimensional microfluidics with internal diameters of 150 micrometers, free-form micro-optical elements with a surface roughness of 6 nanometers, and complex high-strength trusses and lattice structures with minimum feature sizes of 50 micrometers. As a high-speed, layer-free digital light manufacturing process, micro-CAL can process nanocomposites with high solids content and high geometric freedom, enabling new device structures and applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Functional Lithography for Advanced Additive Manufacturing

The viability of 3D printing as a manufacturing technology is limited by the material properties of the printed parts. polySpectra successfully developed a scalable, efficient, and economic print process using commercially available hardware in order to 3D print production parts using novel functional lithography resins. The printed parts exhibited unmatched physical and chemical properties. The combination of the novel resin with unique properties and a facile, economic print process will help elevate additive manufacturing from a prototyping tool to a viable manufacturing technology.

42 ENGINEERING↗
DOE OSTI2023

Electrochemical polymer pen lithography

Disclosed herein is a massively parallel patterning tool for the deposition of single metals or metal alloys with size and composition control. Methods of the disclosure use a hydrogel array of pyramidal pen tips as a medium for localized electrodeposition, in conjunction with a scanning probe lithography platform and a three-electrode cell. This versatile technique can be used for high-throughput 3D printing, biomolecule patterning, or screening of catalyst nanoparticles or thin films.

Mirkin, Chad A.↗
DOE OSTI2021

Direct Optical Lithography of CsPbX 3 Nanocrystals via Photoinduced Ligand Cleavage with Postpatterning Chemical Modification and Electronic Coupling

Microscale patterning of solution-processed nanomaterials is important for integration in functional devices. Colloidal lead halide perovskite (LHP) nanocrystals (NCs) can be particularly challenging to pattern due to their incompatibility with polar solvents and lability of surface ligands. Here, we introduce a direct photopatterning approach for LHP NCs through the binding and subsequent cleavage of a photosensitive oxime sulfonate ester (-C=N-OSOO-). The photosensitizer binds to the NCs through its sulfonate group and is cleaved at the N-O bond during photoirradiation with 405 nm light. This bond cleavage decreases the solubility of the NCs, which allows patterns to emerge upon development with toluene. Postpatterning ligand exchange results in photoluminescence quantum yields of up to 79%, while anion exchange provides tunability in the emission wavelength. Finally, the patterned NC films show photoconductive behavior, demonstrating that good electrical contact between the NCs can be established.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Tin removal by an annular surface wave plasma antenna in an extreme ultraviolet lithography source

Tin contamination of the collector mirror surface remains one of the crucial issues of EUV (Extreme Ultraviolet) sources, directly impacting the availability of the tool. Hydrogen plasma-based tin removal processes employ hydrogen radicals and ions to interact with tin deposits to form gaseous tin hydride (SnH 4 ), which can be removed through pumping. An annular surface wave plasma (SWP) source developed at the University of Illinois—Urbana Champaign is integrated into the cone and perimeter of the collection mirror for in situ tin removal. The SWP is characterized by high ion and radical densities, low electron temperature, and local generation where etching is needed. This method has the potential to significantly reduce downtime and increase mirror lifetime. Radical probe measurements show hydrogen radical densities in the order of 10 19 m -3 , while Langmuir probe measurements show electron temperatures of up to 6 eV and plasma densities on the order of 10 17–18 m -3 . The generated ions are essential to the tin cleaning and have sufficiently low energy to cause no damage to the collector capping layer. Tin etch rates of up to 270 nm/min were observed in a variety of experimental conditions, including various powers, pressures, flowrates, and temperatures. In conclusion, the high etch rates demonstrated in this study exceed the expected contamination rate of the EUV source.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗