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At least 55 records · Page 3

Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects

Existing analyses of the pulsed response of an MOS capacitor for minority-carrier lifetime determination result in a lifetime value averaged over most of the depletion region width. In this report, an analysis of MOS C-t data is presented that enables minority-carrier generation lifetime to be plotted as a function of depletion region depth. The technique is shown to be useful for samples with bulk or buried interfacial layer defects that have defect-free surfaces. Data are presented for intrinsically gettered bulk crystals and extrinsically gettered Si(2-pct Ge) epitaxial layers with misfit dislocations. In addition, for samples that do have uniform lifetimes, the measurement time required for determining carrier lifetime has been reduced by more than an order of magnitude.

Radzimski, Zbignew

Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

Lee, Hsing-Chung

A theoretical analysis of the current-voltage characteristics of solar cells

The current-voltage characteristics and efficiencies of solar cells are discussed. For one solar cell structure detailed curves are presented which include carrier densities, current densities, potential, and quasi-Fermi levels at different voltage levels both with and without optically generated carriers (AMO conditions). In addition some results are presented concerning the influence of various parameter variations such as lifetime, cell thickness, and high-low junction width on solar cell performance.

Hauser, J. R.

Response of silicon solar cell to pulsed laser illumination

The response of silicon solar cell(s) to pulsed laser illumination is discussed. The motivation was due to the interest of Earth to space/Moon power beaming applications. When this work began, it was not known if solar cells would respond to laser light with pulse lengths in the nanosecond range and a repetition frequency in the kHz range. This is because the laser pulse would be shorter than the minority carrier lifetime of silicon. A 20-nanosecond (ns) full width half max (FWHM) pulse from an aluminum-gallium/arsenide (Al-Ga-As) diode laser was used to illuminate silicon solar cells at a wavelength of 885 nanometers (nm). Using a high-speed digital oscilloscope, the response of the solar cells to individual pulses across various resistive loads was observed and recorded.

Willowby, D.

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING

A newly observed solar feature - Macrospicules in He II 304 A

He II 304 A spectroheliograms, obtained with the NRL extreme-ultraviolet slitless spectrograph during the Skylab mission, show spikelike structures at the sun's polar limb which resemble the familiar H-alpha spicules. However, the relatively large size and long life of these He II features has led to distinguishing them by the name 'macrospicules'. The macrospicules appear as protuberances or jets, ranging from 5 to over 60 sec in length, from 5 to 30 sec in width, and from 5 to over 40 minutes in lifetime. Perhaps the most radical departure from H-alpha spicules is that macrospicules occur only within the chromospheric boundaries of coronal holes. Thus macrospicules are most easily visible over the solar poles due to the coronal holes normally present there, and much less frequently at lower latitudes during limb passage of relatively rare, low-latitude coronal holes.

Bohlin, J. D.

Automated array assembly task, phase 1

Various aspects of a sensitivity analysis, in particular, the impact of variations in metal sheet resistivity, metal line width, diffused layer sheet resistance, junction depth, base layer lifetime, optical coating thickness and optical coating refractive index and on process reproducibility for A's diffusion from a polymer dopant source and on module fabrication were studied. Model calculations show that acceptable process windows exist for each of these parameters.

Carbajal, B. G.

Doubly differential cross sections for galactic heavy-ion fragmentation

An abrasion-ablation T-matrix formulation is applied to the calculation of double differential-cross sections in projectile fragmentation of 2.1 GeV/nucleon O-16 on Be-9 and 86 MeV/nucleon C-12 on C-12 and Ag-108. An exponential parameterization of the ablation T-matrix is used and the total width of the intermediate states is taken as a parameter. Fitted values of the total width to experimental results are used to predict the lifetime of the ablation stage and indicate a decay time on the order of 10 to the -19th power sec.

Cucinotta, Francis A.

Widths of atomic 4s and 4p vacancy states, 46 less than or equal to Z less than or equal to 50

Auger and X-ray photoelectron spectra involving N1, N2, and N3 vacancy states of Pd, Ag, Cd, In, and Sn were measured and compared with results of free atom calculations. As previously observed in Cu and Zn Auger spectra that involve 3d-band electrons, free-atom characteristics with regard to widths and structure were found in the Ag and Cd M4-N4,5N4,5 and M5-N4,5N4,5 Auger spectra that arise from transitions of 4d-band electrons. Theoretical N1 widths computed with calculated free-atom Auger energies agree well with measurements. Theory however predicts wider N2 than N3 vacancy states (as observed for Xe), while the measured N2 and N3 widths are nearly equal to each other and to the average of the calculated N2 and N3 widths. The calculations are made difficult by the exceedingly short lifetime of some 4p vacancies and by the extreme sensitivity of super-Coster-Kronig rates, which dominate the deexcitation, to the transition energy and to the fine details of the atomic potential.

Hsiungchen, M.

Widths of atomic 4s and 4p vacancy states, Z between 46 and 50

X-ray photoelectron and Auger spectra involving N sub 1, N sub 2, and N sub 3 vacancy states of Pd, Ag, Cd, In, and Sn were measured and compared with results of free-atom calculations. As previously observed in Cu and Zn Auger spectra that involve 3d-band electrons, free-atom characteristics are found, with regard to widths and structure, in the Ag and Cd M sub 4-N sub 4,5 N sub 4,5 and M sub 5-N sub 4,5 N sub 4,5 Auger spectra that arise from transitions of 4d-band electrons. Theoretical N sub 1 widths computed with calculated free-atom Auger energies agree well with measurements. Theory, however, predicts wider N sub 2 than N sub 3 vacancy states (as observed for Xe), while the measured N sub 2 and N sub 3 widths are nearly equal to each other and to the average of the calculated N sub 2 and N sub 3 widths. The calculations are made difficult by the exceedingly short lifetime of some 4 p vacancies and by the extreme sensitivity of super-Coster-Kronig rates, which dominate the deexcitation to the transition energy and to the fine details of the atomic potential.

Chen, M. H.

Absolute OH absorption cross sections (for lidar measurements)

Experimental data are employed to calculate absorption cross sections for several rotational lines in the OH A-X system. The cross sections are computed as functions of the spectral and line widths and temperature of a laser beam, and account for lifetimes and branching ratios. Detection limits for the P1(2) transition of the (1,0) band were examined. The oscillator strengths and cross-sections obtained are important for quantifying OH concentrations in the stratosphere from lidar return signals.

Mcgee, T. J.

Star formation and the distribution of HI and infrared emission in M51

H I, infrared, CO, H alpha and beta band observations of M51, the prototypical grand-design spiral galaxy, are used to study the consequences of star formation for the distribution of H I and dust. Using the H I and CO data sets new tests of the idea that the H I is largely dissociation product in star-forming regions were performed. It was confirmed that the H I spiral arms are generally coincident with the H I region arms, and offset downstream from the CO arms. The radial distributions of total gas, H alpha and H I surface density have a simple explanation in the dissociation picture. The distributions also demonstrate how the surface density of H I might be related to the star formation efficiency in molecule-rich galaxies. The large width of the regions along the arms compared to that of the H II regions can be understood in terms of a simple Stroemgren sphere calculation. The long lifetime of the stars producing dissociating radiation vs. those producing ionizing radiation will also contribute to the greater width of the H I arms if stars are continuously forming on the arms. The lack of detailed coincidence of the H I and H II regions along the inner arms has a variety of possible explanations within the dissociation scenario. Two simple tests to probe the origin of the IRAS emission in M51 were performed.

Rand, Richard J.

Investigation of the 1-0 pressure-induced vibrational absorption spectrum of hydrogen at temperatures below ambient

A theoretical fit has been made to laboratory measurements of the 1-0 collisionally induced H2 absorption band over a temperature range of 100-273 K and for densities up to 22 amagats. Both the Birnbaum-Cohen and the MacTaggert-Hunt line shape profiles were used. In addition, an intermolecular potential of either a Lennard-Jones 6-12 or a Morse-spline-van der Waals has been used for each line shape. The best fit resulted in a chi-square of 5%. Line widths have also been derived as a function of temperature. The lifetimes of the states were calculated.

Goorvitch, D.

Investigation of the 2-0 pressure-induced vibrational absorption spectrum of hydrogen at temperatures below ambient

A theoretical fit has been made to our laboratory measurements of the 2-0 collisionally induced H2 absorption band for temperatures of 122 and 273.3 K and at a density of 20 amagats. A Lennard-Jones 6-12 intermolecular potential and a Birnbaum-Cohen line profile have been used. The fit resulted in a chi-square of 0.2%. Line widths have also been derived as a function of temperature. The lifetimes of the states have been calculated.

Silvaggio, P. M.

Star formation and the distribution of HI and infrared emission in M51

H I, infrared, CO, H alpha and beta band observations of M51, the prototypical grand-design spiral galaxy, are used to study the consequences of star formation for the distribution of H I and dust. Using the H I and CO data sets new tests of the idea that the H I is largely a dissociation product in star-forming regions were performed. It was confirmed that the H I spiral arms are generally coincident with the H II region arms, and offset downstream from the CO arms. The radial distributions of total gas, H alpha and H I surface density have a simple explanation in the dissociation picture. The distributions also demonstrate how the surface density of H I might be related to the star formation efficiency in molecule-rich galaxies. The large width of the H I regions along the arms compared to that of the H II regions can be understood in terms of a simple Stroemgren sphere calculation. The longer lifetime of the stars producing dissociating radiation vs. those producing ionizing radiation will also contribute to the greater width of the H I arms if stars are continuously forming on the arms. The lack of detailed coincidence of the H I and H II regions along the inner arms has a variety of possible explanations within the dissociation scenario. Two simple tests to probe the origin of the IRAS emission in M51 were performed.

Rand, Richard J.

Polar Coronal Hole Ephemeral Regions, the Fast Solar Wind and the Global Magnetic Dynamo

The X-Ray Telescope aboard Hinode has been regularly observing both the north and south solar polar coronal holes from November 2006 through March 2009. We use the observations of emerged flux regions within the coronal hole as evidenced by small x-ray bright points to study the physical properties of these regions. The width of the emerged flux region loop footpoints, the duration of the x-ray emission lifetime for the emerged flux region, the latitude of formation and whether an x-ray or EUV jet was observed were all recorded. In the present work we detail these observations and show a dependence on the width of the emerged flux region (bright point) to the number of x-ray jets observed. The distribution of base width is then related to a power law for number of emerged flux regions as a function of base width.

Cirtain, Jonathan W.

A cloud collision model for water maser excitation

High-velocity collisions between small, dense, neutral clouds or between a dense cloud and a dense shell can provide the energy source required to excite H2O maser emission. The radiative precursor from the surface of the collisional shock front rapidly diffuses through the cloud, heating the dust grains but leaving the H2 molecules cool. Transient maser emission occurs as the conditions for the Goldreich and Kwan (1974) 'hot-dust cold-gas' maser pump scheme are realized locally within the cloud. In time, the local maser action quenches due to the heating of the H2 molecules by collisions against the grains. Although this model cannot explain the very long-lived steady maser features, it is quite successful in explaining a number of the observed properties of the high-velocity features in such sources as Orion, W51, and W49. In particular, it provides a natural explanation for the rapid time variations, the narrow line widths, juxtaposition of high- and low-velocity features, and the short lifetimes which are frequently observed for the so-called high-velocity maser 'bullets' thought to be accelerated by strong stellar winds.

Tarter, T. C.

Proximity Effects and Nonequilibrium Superconductivity in Transition-Edge Sensors

We have recently shown that normal-metal/superconductor (N/S) bilayer TESs (superconducting Transition-Edge Sensors) exhibit weak-link behavior.l Here we extend our understanding to include TESs with added noise-mitigating normal-metal structures (N structures). We find TESs with added Au structures also exhibit weak-link behavior as evidenced by exponential temperature dependence of the critical current and Josephson-like oscillations of the critical current with applied magnetic field. We explain our results in terms of an effect converse to the longitudinal proximity effect (LoPE) 1, the lateral inverse proximity effect (LaiPE), for which the order parameter in the N/S bilayer is reduced due to the neighboring N structures. Resistance and critical current measurements are presented as a function of temperature and magnetic field taken on square Mol Au bilayer TESs with lengths ranging from 8 to 130 {\mu}m with and without added N structures. We observe the inverse proximity effect on the bilayer over in-plane distances many tens of microns and find the transition shifts to lower temperatures scale approximately as the inverse square of the in- plane N-structure separation distance, without appreciable broadening of the transition width. We also present evidence for nonequilbrium superconductivity and estimate a quasiparticle lifetime of 1.8 \times 10-10 s for the bilayer. The LoPE model is also used to explain the increased conductivity at temperatures above the bilayer's steep resistive transition.

Sadleir, John E.