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At least 55 records · Page 3

Kinetics of the luminescence decay of Fe{sup 2+} impurity centres in polycrystalline ZnSe upon excitation by an electron beam

The kinetics of the decay of the luminescence of Fe{sup 2+} ions is measured at nitrogen temperature in polycrystalline ZnSe excited by a short pulse of accelerated electrons. The time dependence of the luminescence intensity differs from the exponential one, observed upon excitation of luminescence by a short light pulse. The obtained nonexponential dependence is theoretically described. The explanation is based on the quenching effect of the excited state of the Fe{sup 2+} ion by free electrons of the volume charge of the current of accelerated electrons in the sample (Auger effect). It was shown that the relaxation of the volume charge after the electron-accelerating voltage is removed makes a significant contribution to the decay kinetics of the impurity luminescence. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Trap‐Engineering the Persistent Luminescence of Ca 3 Ga 4 O 9 :Tb 3+ via Al 3+ Substitution for Optical Data Storage

Abstract Optically stimulated luminescence (OSL) materials hold great potential for optical data storage (ODS) and anticounterfeiting applications. Nevertheless, the scarcity of suitable luminescent materials with deep‐level traps remains a significant obstacle. Herein, a host substation strategy have been employed to tune the persistent luminescence (PersL) and OSL properties of Ca 3 Ga 4 O 9 :Tb 3+ by Al 3+ substitution through trap engineering and demonstrated their potential. Specifically, the photoluminescence of the Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ of Tb 3+ is first investigated due to its different occupancies of Ca 2+ . The influence of host substitution on the crystal structure, trap depth, trap density, PersL, and OSL properties have further investigated. A series of strong PersL and OSL peaks from the Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ with bluish‐green emissions have been observed. The Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ have shown controllable photon release upon thermal and optical stimuli, enhancing their performance for ODS. Thermally stimulated luminescence suggests that vacancy and defect concentrations inside the Ca 3‐x% (Ga 1‐y% Al y% ) 4 O 9 :x%Tb 3+ can be manipulated by Tb 3+ doping and Al 3+ substitution, which ultimately leads to the formation of deep traps and a broad distribution of traps with increased deep trap concentration. The work demonstrates that trap engineering through Al 3 ⁺ substitution is an effective method for tuning PersL and OSL properties of Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ for ODS.

Abeywickrama, Thulitha M. [Department of Chemistry↗

High-pressure Cr 3+ luminescence and Raman spectroscopy of a natural MgAl 2 O 4 spinel to ∼60 GPa

Cr 3+ luminescence and Raman spectroscopy of a natural spinel were collected up to ∼60 GPa at ambient temperature using a Ne or a 4:1 methanol-ethanol mixture as the pressure transmitting media. Here, in the Ne experiments above ∼40 GPa, and in the 4:1 methanol–ethanol experiments above ∼20 GPa, all luminescence emission lines shift non-linearly, and by 59 GPa the spectra are broadened and are significantly changed. The Raman modes shift smoothly to higher frequencies with pressure, with a slight change in slope above 40 GPa, with no kinks or discontinuities. By ∼60 GPa, only the most intense Eg mode remains resolvable, appearing broadened and reduced in intensity. The change in slope in the Raman modes and luminescence bands may be due to a change in the compression mechanism of spinel. When spinel was decompressed from 40 GPa all changes were fully reversible; however, when the samples were decompressed from 54 to 60 GPa in Ne and 59 GPa in 4:1 methanol-ethanol the spectra were irreversibly changed. The change in the luminescence spectra and the Raman spectra are likely due to a pressure induced disorder of the anions or partial amorphization between 40 and 60 GPa.

Cr3+↗

Imaging local luminescence variations in CdSe 0.1 Te 0.9 thin films grown by the colossal grain growth process

Clear visualization and understanding of luminescence properties of grain interiors and grain boundaries in polycrystalline thin-film photovoltaic materials are crucial to achieving high-performance solar cells. Luminescence-based measurements, for example, reveal sub-bandgap energetic disorder or impurity-related radiative transitions in these materials, and when performed in the absolute scale, they can show the extent of voltage-limiting non-radiative recombination. Here we use a hyperspectral imaging technique to investigate inter- and intra-grain photoluminescence variations in polycrystalline CdSe 0.1 Te 0.9 films made by the colossal grain growth process. We observe that grain boundaries show higher luminescence than grain interiors for all energies below the bandgap energy. Multiple distinct sub-bandgap defect transitions are detected and determined to be related to donor-acceptor pair impurities. A comparison of the excitation-intensity-dependent photoluminescence at the grain boundaries with grain interiors suggests that carrier concentration is higher at grain boundaries. This finding is supported by photoemission electron microscopy imaging of the films, showing approximately 70 meV upward energy shift in the band structure at the grain boundaries. Finally, we investigate a dramatic thermal quenching behavior related to the donor-acceptor pairs luminescence over a temperature range and use a rate-equation model to attribute it to the sudden redirection of the radiative recombination channels to non-radiative channels with increasing temperature.

14 SOLAR ENERGY↗

Family of Robust and Strongly Luminescent CuI-Based Hybrid Networks Made of Ionic and Dative Bonds

The CuI-derived inorganic–organic hybrid compounds are considered as promising phosphors for the lighting industry. Herein, exploiting N-monoalkylated hexaminium salts, [R-HMTA]X (R = Me, Et, Pr, and propargyl; X = Cl and I), as multibridging ligands, we have designed and synthesized a unique class of one-dimensional and two-dimensional hybrid CuI-materials. The reactions of these salts with CuI give rise to All-in-One (AIO) type compounds combining ionic and dative bonds between inorganic and organic components. The latter is formed by structurally unique inorganic [Cu x I y ] (y–x)– clusters, chains, or sheets interconnected through [R-HMTA] + cations via multiple Cu–N bonds. The so-designed compounds at ambient temperature exhibit tunable luminescence spanning from deep blue to red color (λ em = 430–625 nm) with microsecond lifetimes and the quantum efficiency of up to 78%. Remarkably, the AIO materials feature nontrivial excitation- (ED) and temperature-dependent (TD) luminescence, allowing their emission color to be finely adjusted from deep blue to red through changing the excitation wavelength and/or temperature. Based on the TD emission spectroscopy and theoretical calculations, a possible mechanism of the luminescence has been proposed. In conclusion, the very interesting luminescence characteristics coupled with good thermal and photostability render these AIO hybrid materials possible candidates for applications in energy-efficient lighting devices.

36 MATERIALS SCIENCE↗

Luminescence mechanism in hydrogenated silicon quantum dots with a single oxygen ligand

Though photoluminescence (PL) of Si quantum dots (QDs) has been known for decades and both theoretical and experimental studies have been extensive, their luminescence mechanism has not been elaborated. Several models have been proposed to explain the mechanism. A deep insight into the origin of light emissions in Si QDs is necessary. This work calculated the ground- and excited state properties of hydrogenated Si QDs with various diameters, including full hydrogen passivation, single Si=O ligands, single epoxide and coexisting Si=O and epoxide structures in order to investigate the dominant contribution states for luminescence. The results revealed that even a single oxygen atom in hydrogenated Si QDs can dramatically change their electronic and optical properties. Intriguingly, we found that a size-independent emission, the strongest among all possible emissions, was induced by the single Si=O passivated Si-QDs. In non-oxidized Si-QDs exhibiting a core-related size-tunable emission, the luminescence properties can be modulated by the ligands of Si QDs, and a very small number of oxygen ligands can strongly influence the luminescence of nanocrystalline silicon. Our findings deepen the understanding of the PL mechanism of Si QDs and can further promote the development of silicon-based optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Pressure-stimulus-responsive behaviors of core–shell InP/ZnSe nanocrystals: remarkable piezochromic luminescence and structural assembly

Piezochromic luminescence materials with optical properties can be adjusted (the colors most sensitive to the human eye range from red to green) to provide powerful means for information acquisition in various applications. Inorganic quantum dots, typically based on heavy metals such as cadmium and lead, have congenital advantages as luminescence materials, including strong inoxidizability and excellent photoelectric properties. However, small band-gap shifts under pressure have hindered the development of inorganic-based piezochromic materials. In this study, we combined in situ high-pressure photoluminescence (PL) and absorption measurements with synchrotron X-ray scattering spectra to elucidate the remarkable modulation of optical properties and morphologies by pressure, particularly that of the piezochromic luminescence, in all-inorganic core–shell InP/ZnSe nanocrystals (NCs). We observed a stepwise PL color change from red to green, and an ultrabroad bandgap tunability of 0.46 eV was observed from 1.99 to 2.45 eV in the pressure range of 14.2 GPa for InP/ZnSe NCs. Moreover, two-dimensional (2D) InP/ZnSe nanosheets were synthesized by the stress-driven attachment of nanoparticles. These results demonstrate the ability of the pressure-stimulus response to trigger remarkable piezochromic luminescence and 2D nanosheet assembly in InP/ZnSe NCs, which paves the way for new applications of all-inorganic InP-based semiconductor NCs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Room temperature crystal field splitting of curium resolved by circularly polarized luminescence spectroscopy

Coordination of Cm(III) with a chiral decadentate ligand N,N,N',N'-tetrakis[(6-carboxypyridin-2-yl)methyl]-1,2-diaminocyclohexane (tpadac) generated complexes with strong luminescence allowing for the unprecedented measurement of well-resolved Cm(III) circularly polarized luminescence spectra. Quantitative resolution of the electronic structure of the [Cm(tpadac)][K] complexes was achieved at room temperature, highlighting the strength of the combination of luminescence and circularly polarized luminescence spectroscopies to unravel the fundamental electronic structure of Cm(III). These results are a clear demonstration that these spectroscopies are powerful yet simple tools for the fundamental understanding of electronic structure, which opens the door to future investigations of other Cm(III) complexes in geometries relevant to nuclear applications, and even other 5f-elements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Spectral reflectance change and luminescence of selected salts during 2-10 KeV proton bombardment - Implications for Io

Radiation damage and luminescence caused by magnetospheric charged particles have been suggested by several investigators as mechanisms that are capable of explaining some of the peculiar spectral/albedo features of Io. In the present paper, this possibility is pursued by measuring the UV-visual spectral reflectance and luminescent efficiency of several proposed Io surface constituents during 2 to 10 keV proton irradiation at room and low temperatures. The luminescence efficiencies of pure samples, studied in the laboratory, suggest that charged-particle induced luminescence from Io's surface might be observable by spacecraft such as Voyager when viewing Io's dark side.

Nelson, R. M.↗

The occurrence of blue luminescing enstatite in E3 and E4 chondrites

Two compositional types of enstatite that emit cathodoluminescence (CL) are known to exist in E3 and E4 chondrites. The first type consists of the most common enstatites that are relatively FeO-poor and emit a red CL. Their CL is apparently activated by the presence of MnO and Cr2O3 in concentrations of 0.2 and 0.6 weight percent. The second type of enstatite is nearly FeO-free, contains no MnO or Cr2O3 and emits a blue CL. The origin of these two types of enstatite and their accompanying chemical and CL differences has long been a subject of discussion. Leitch and Smith first observed to two types and felt the compositional differences were too great to have formed under the same conditions. They postulated the two types of enstatite formed on separate parent bodies and were mixed when these bodies collided. McKinley et al. observed a continuous range of compositions between blue luminescing and red luminescing enstatites and concluded the two types of enstatite formed evidence that blue luminescing pyroxenes were relics that did not completely melt during the heating event which melted other precursor grains, and are distinct from the red CL pyroxene in the chondrules in E chondrites. In order to further clarify the nature and origin of the pyroxene that emits blue CL, the sections listed in another work were examined for the occurrence of blue luminescing enstatite.

Dehart, John M.↗

Near Infrared Luminescence Properties of Mn(5+): Ca5(PO4)3F

We report a spectroscopic investigation of Mn(5+) doped Ca5(PO4)(sub 3)F or FAP. Mn(5+) doped crystals have recently attracted world wide attention for potential solid-state laser applications. Following optical excitation of Mn: FAP with the 600 nm output of a Nd: YAG OPO laser system, we observed a strong near infrared luminescence centered at around 1150 nm. The room temperature luminescence decay time was measured to be approximately 635 microseconds. We attribute the infrared luminescence to the(1)E yields (3)A2 transition of tetrahedrally coordinated Mn5+ ions located in a strong crystal field environment. Absorption, luminescence and lifetime data of Mn: FAP will be presented and discussed.

Davis, Valetta R.↗

Borescope Imaging System Developed for Luminescent Paint Measurements

The luminescent paint measurement technique utilizes a coating that is applied to a test article, allowing the air pressure or temperature of a surface to be measured. These coatings are commonly referred to as pressure- or temperature-sensitive paints. These paints are excited with short wavelength light and emit light at a longer wavelength. By measuring the change of intensity of the emitted light from a known reference condition, researchers can determine the pressure or temperature. The technique of measuring full-field surface pressure and temperatures using luminescent coatings has required a direct line-of-sight from the camera to the surface under study. In most experiments that have used pressure-or temperature-sensitive paints, the test surfaces are mounted so it is straightforward to position the camera and excitation source. In other cases, the luxury of having optical access through a window is not available or even possible. We developed a borescope imaging system to gain optical access in these confined areas. The commercially available 10-mm-diameter rigid borescope contains relay optics to transmit the detected light to a charge-coupled device (CCD) camera as well as an internal fiber-optic light guide to provide the excitation source for the luminescent coatings. The coupled light source can be continuous for the intensity method but also can be pulsed or have a variable intensity for a newer method of acquisition that measures the decay or phase lag of the emitted light. This type of borescope focuses the image directly on the CCD chip without using a fiber-optic relay, eliminating unwanted honeycomb patterns that are typical of fiber-optic type borescopes. This produces images of much higher clarity and uniformity, which are critical for acquiring accurate measurements from the luminescent coatings.

Bencic, Timothy J.↗

Temperature Sensing Above 1000 C Using Cr-Doped GdAlO3 Spin-Allowed Broadband Luminescence

Cr-doped GdAlO3 (Cr:GdAlO3) is shown to produce remarkably high-intensity spin-allowed broadband luminescence with sufficiently long decay times to make effective luminescence-decay-time based temperature measurements above 1000 C. This phosphor is therefore an attractive alternative to the much lower luminescence intensity rare-earth-doped thermographic phosphors that are typically utilized at these elevated temperatures. In particular, Cr:GdAlO3 will be preferred over rare-earth-doped phosphors, such as Dy:YAG, at temperatures up to 1200 C for intensity-starved situations when the much lower emission intensity from rare-earth-doped phosphors is insufficient for accurate temperature measurements in the presence of significant radiation background. While transition-metal-doped phosphors such as Cr:Al2O3 (ruby) are known to exhibit high luminescence intensity at low dopant concentrations, quenching due to nonradiative decay pathways competing with the (sup 2)E to (sup 4)A(sub 2) radiative transition (R line) has typically restricted their use for temperature sensing to below 600 C. Thermal quenching of the broadband (sup 4)T(sub 2) to (sup 4)A(sub 2) radiative transition from Cr:GdAlO3, however, is delayed until much higher temperatures (above 1000 C). This spin-allowed broadband emission persists to high temperatures because the lower-lying (sup 2)E energy level acts as a reservoir to thermally populate the higher shorter-lived (sup 4)T(sub 2) energy level and because the activation energy for nonradiative crossover relaxation from the (sup 4)T(sub 2) level to the (sup 4)A(sub 2) ground state is high. The strong crystal field associated with the tight bonding of the AlO6 octahedra in the GdAlO3 perovskite structure is responsible for this behavior.

Eldridge, Jeffrey I.↗

Temperature and Pressure Sensors Based on Spin-Allowed Broadband Luminescence of Doped Orthorhombic Perovskite Structures

Systems and methods that are capable of measuring pressure or temperature based on luminescence are discussed herein. These systems and methods are based on spin-allowed broadband luminescence of sensors with orthorhombic perovskite structures of rare earth aluminates doped with chromium or similar transition metals, such as chromium-doped gadolinium aluminate. Luminescence from these sensors can be measured to determine at least one of temperature or pressure, based on either the intense luminescence of these sensors, even at high temperatures, or low temperature techniques discussed herein.

Eldridge, Jeffrey I.↗

Morphology and Luminescence Properties of Transition Metal Doped Zinc Selenide Crystals

Zinc selenide is an excellent matrix material to dope with rare-earth and transition metal to achieve mid-infrared luminescence to develop high power lasers. The luminescence, morphology and refractive index is significantly affected by the doping and defects generated due to size and valency of dopants, concentration, growth process and convection during the growth. The aim of the study is to investigate effect of point and line defects generated due to low doping of iron and chromium on the emission and morphology of the zinc selenide. Luminescence and morphological properties of large iron and chromium doped zinc selenide single crystals were studied to evaluate the effect of extremely low residual impurities and defects associated with the doping process. The emission properties following both short wavelength (i.e., ultraviolet; 350 – 370 nm) excitation and longer wavelength (i.e., near infrared; 850 – 870 nm) excitation were characterized. Luminescence emission bands were identified in both doped crystals. In addition to the primary emission bands, satellite peaks and intra-center transitions were also observed. Due to local population defects associated with the residual impurities (ppm to ppb) in the Fe-ZnSe and Cr-ZnSe crystals, peak emission wavelengths were observed to shift. Raman studies using 266 and 532 – nm excitation revealed different positions of longitudinal and transverse peaks for Fe-ZnSe and Cr-ZnSe crystals, associated with different levels of defects due to the different ion sizes. The emission bands were found to decrease in intensity due to recombination of residual impurity co-dopants and complex defects generated during growth and fabrication. Cryogenic temperature analyses revealed a very clean emission band due to freezing of some of the point and line defects. An emission band observed at 980 nm for both crystals at room temperature as well as cryogenic temperatures indicates a vibronic peak in ZnSe. The scanning electron microscopy (SEM) images of the local morphology support the conclusion that small crystallites in doped crystals are also present.

Zinc selenide↗

Luminescent solar concentrators and related methods of manufacturing

Luminescent solar concentrators in accordance with various embodiments of the invention can be designed to minimize photon thermalization losses and incomplete light trapping using various components and techniques. Cadmium selenide core, cadmium sulfide shell (CdSe/CdS) quantum dot (“QD”) technology can be implemented in such devices to allow for near-unity QDs and sufficiently large Stokes shifts. Many embodiments of the invention include a luminescent solar concentrator that incorporates CdSe/CdS quantum dot luminophores. In further embodiments, anisotropic luminophore emission can be implemented through metasurface/plasmonic antenna coupling. In several embodiments, red-shifted luminophores are implemented. Additionally, top and bottom spectrally-selective filters, such as but not limited to selectively-reflective metasurface mirrors and polymeric stack filters, can be implemented to enhance the photon collection efficiency. In some embodiments, luminescent solar concentrator component is optically connected in tandem with a planar Si subcell, forming a micro-optical tandem luminescent solar concentrator.

Needell, David R.↗

High luminescence plastic scintillators

A plastic scintillator includes a polymeric matrix comprising a primary fluorophore capable of forming an amorphous glass in its pure form. The primary fluorophore is also capable of generating luminescence in the presence of ionizing radiation and includes: a central species including silicon; a luminescent organic group bonded to the central species or to an optional organic linker group, the luminescent organic group including fluorene or an analog thereof; and the optional organic linker group, if present, is bonded to the central species and the luminescent organic group.

Myllenbeck, Nicholas↗

High luminescence plastic scintillators

A plastic scintillator includes a polymeric matrix comprising a primary fluorophore capable of forming an amorphous glass in its pure form. The primary fluorophore is also capable of generating luminescence in the presence of ionizing radiation and includes: a central species including silicon; a luminescent organic group bonded to the central species or to an optional organic linker group, the luminescent organic group including fluorene or an analog thereof; and the optional organic linker group, if present, is bonded to the central species and the luminescent organic group.

Myllenbeck, Nicholas↗