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At least 55 records · Page 3

Operating Lifetime Study of Ultraviolet (UV) Light-Emitting Diode (LED) Products

Light-emitting diodes (LEDs) can emit radiation that spans the range from near infrared (IR) to all three bands of ultraviolet (UV) radiation: UV-A, UV-B, and UV-C. This report focuses on LEDs that emit in one of the three UV bands because they have the potential to displace lowpressure mercury vapor (LPMV) lamps in a variety of industrial processes, including ink and adhesive curing, medical procedures, and germicidal disinfection. However, before emerging UV LED technologies can displace LPMV lamps, the efficiency and reliability of these sources must meet the user’s expectations in each application. An earlier report focused on the construction and initial performance of commercial UV LED products in radiometric and current-voltage (IV) tests [1]. This report focuses on the long-term performance and reliability of the same set of commercial products. The intent of this report is to provide to the lighting industry a benchmark of the state of UV LEDs as of mid-2021 when these products were purchased. Understanding the failure modes and failure rates of UV LEDs is important in improving UV product reliability at the LED, lamp, and luminaire level and is critical to developing products with higher efficiency, lower carbon footprint, and significantly reduced environmental impact than LPMV lamps.

42 ENGINEERING↗

Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching

Waste dust generated during manufacturing of LED contains significant amounts of gallium and indium, needs suitable treatment and can be an important resource for recovery. The LED industry waste dust contains primarily gallium as GaN. Leaching followed by purification technology is the green and clean technology. To develop treatment and recycling technology of these GaN bearing e-waste, leaching is the primary stage. In our current investigation possible process for treatment and quantitative leaching of gallium and indium from the GaN bearing e-waste or waste of LED industry dust has been developed. To recycle the waste and quantitative leaching of gallium, two different process flow sheets have been proposed. In one, process first the GaN of the waste the LED industry dust was leached at the optimum condition. Subsequently, the leach residue was mixed with Na{sub 2}CO{sub 3}, ball milled followed by annealing, again leached to recover gallium. In the second process, the waste LED industry dust was mixed with Na{sub 2}CO{sub 3}, after ball milling and annealing, followed acidic leaching. Without pretreatment, the gallium leaching was only 4.91 w/w % using 4 M HCl, 100 °C and pulp density of 20 g/L. After mechano-chemical processing, both these processes achieved 73.68 w/w % of gallium leaching at their optimum condition. The developed process can treat and recycle any e-waste containing GaN through ball milling, annealing and leaching. - Highlights: • Simplest process for treatment of GaN an LED industry waste developed. • The process developed recovers gallium from waste LED waste dust. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} revealed. • Solid-state chemistry involved in this process reported. • Quantitative leaching of the GaN was achieved.

54 ENVIRONMENTAL SCIENCES↗

Injection molding of high precision optics for LED applications made of liquid silicone rubber

Light Emitting Diodes (LED) conquer the growing global market of lighting technologies. Due to their advantages, they are increasingly used in consumer products, in lighting applications in the home and in the mobility sector as well as in industrial applications. Particularly, with regard to the increasing use of high-power LED (HP-LED) the materials in the surrounding area of the light emitting semiconductor chip are of utmost importance. While the materials behind the semiconductor chip are optimized for maximum heat dissipation, the materials currently used for the encapsulation of the semiconductor chip (primary optics) and the secondary optics encounter their limits due to the high temperatures. In addition certain amounts of blue UV radiation degrade the currently used materials such as epoxy resins or polyurethanes for primary optics. In the context of an ongoing joint research project with various partners from the industry, an innovative manufacturing method for high precision optics for LED applications made of liquid silicone rubber (LSR) is analyzed at the Institut of Plastics Processing (IKV), Aachen. The aim of this project is to utilize the material-specific advantages of high transparent LSR, especially the excellent high temperature resistance and the great freedom in design. Therefore, a high integrated injection molding process is developed. For the production of combined LED primary and secondary optics a LED board is placed in an injection mold and overmolded with LSR. Due to the integrated process and the reduction of subcomponents like the secondary optics the economics of the production process can be improved significantly. Furthermore combined LED optics offer an improved effectiveness, because there are no losses of the light power at the transition of the primary and secondary optics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Phosphors for near UV-Emitting LED's for Efficacious Generation of White Light

1) We studied phosphors for near-UV (nUV) LED application as an alternative to blue LEDs currently being used in SSL systems. We have shown that nUV light sources could be very efficient at high current and will have significantly less binning at both the chip and phosphor levels. We identified phosphor blends that could yield 4100K lamps with a CRI of approximately 80 and LPWnUV,opt equal to 179 for the best performing phosphor blend. Considering the fact that the lamps were not optimized for light coupling, the results are quite impressive. The main bottleneck is an optimum blue phosphor with a peak near 440 nm with a full width half maximum of about 25 nm and a quantum efficiency of >95%. Unfortunately, that may be a very difficult task when we want to excite a phosphor at ~400 nm with a very small margin for Stokes shift. Another way is to have all the phosphors in the blend having the excitation peak at 400 nm or slightly shorter wavelength. This could lead to a white light source with no body color and optimum efficacy due to no self-absorption effects by phosphors in the blend. This is even harder than finding an ideal blue phosphor, but not necessarily impossible. 2) With the phosphor blends identified, light sources using nUV LEDs at high current could be designed with comparable efficacy to those using blue LEDs. It will allow us to design light sources with multiple wattages using the same chips and phosphor blends simply by varying the input current. In the case of blue LEDs, this is not currently possible because varying the current will lower the efficacy at high current and alter the color point. With improvement of phosphor blends, control over CRI could improve. Less binning at the chip level and also at the phosphor blend level could reduce the cost of SSL light sources. 3) This study provided a deeper understanding of phosphor characteristics needed for LEDs in general and nUV LEDs in particular. Two students received Ph.D. degrees and three undergraduates participated in this work. Two of the undergraduate students are now in graduate school. The results were widely disseminated – 20 archival journal publications (published, accepted or in preparation) and three conference proceedings resulted. The students presented their work at 11 different national/international conferences (32 oral or poster presentations) and the PI’s delivered 12 invited, keynote or plenary lectures.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Improved InGaN LED System Efficacy and Cost via Droop Reduction

Efficiency droop is a non-thermal process intrinsic to indium gallium nitride light emitting diodes (LEDs) in which the external quantum efficiency (EQE) decreases with increasing drive current density. Mitigating droop would allow one to reduce the size of LEDs driven at a given current or to drive LEDs of given size at higher current while maintaining high efficiencies. In other words, droop mitigation can lead to significant gains in light output per dollar and/or light output per watt of input power. This project set an EQE improvement goal at high drive current density which was to be attained by improving the LED active region design and growth process following a droop mitigation strategy. The interactions between LED active region design parameters and efficiency droop were studied by modeling and experiments. The crystal defects that tend to form in more complex LED designs intended to mitigate droop were studied with advanced characterization methods that provided insight into the structural and electronic properties of the material. This insight was applied to improve the epitaxy process both in terms of active region design and optimization of growth parameters. The final project goals were achieved on schedule and an epitaxy process leading to LEDs with EQE exceeding the project target was demonstrated.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Laboratory Evaluation of Tunable White LEDs for Circadian Lighting in Commercial Offices

Tunable white Light-Emitting Diode (LED) systems that allow users to control Correlated Color Temperature (CCT) are often marketed for circadian health, which is an emerging priority in commercial office lighting. However, the energy impacts of meeting circadian criteria with standard non-tunable LEDs and with tunable white LEDs are not well understood. The goals of this project were to implement select commercial lighting systems, including tunable white LEDs, to meet visual and circadian criteria in an office environment, and to quantify lighting performance and energy usage. Most recent studies on tunable white LEDs, circadian lighting strategies, and energy impacts have relied on computer simulations and models. While little research has directly measured tunable LED energy usage for circadian criteria, EPRI has recently published results from a lab-based evaluation of illuminance, spectral output, and energy consumption for several LED products marketed for circadian performance. The research presented here contributes to the field by quantifying the performance of market-available technologies through detailed monitoring of performance parameters (such as illuminance, spectral output, glare, and energy consumption) in a physical space (an office environment).

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Microwave-Mediated Extraction of Critical Metals from LED E-Waste

This study introduces a microwave-assisted technique for extracting critical minerals from LED electronic waste. The process begins with microwave irradiation, which thermally decomposes the LED’s plastic lens into a brittle, charred residue. During this stage, the LED chip undergoes deflagration—being rapidly ejected from the reflective cavity and becoming embedded within the decomposed lens material. Consequently, the chip is encapsulated in the resulting charred residue. This composite, consisting of the charred lens and the LED chip, can be easily separated from the metallic pins (Fe, Ni, Ag), which remain almost undamaged. Subsequent calcination of the charred material in air exposes the materials making up the LED chip, which contain critical metals (e.g., Ga, As, In, Y, Au). These metals are then extracted through a two-step acid leaching process involving aqua regia followed by hot concentrated hydrochloric acid, yielding them in potentially recoverable forms. The synergistic effect of microwave irradiation and acid treatment achieves an average extraction efficiency of 96% for critical metals. Notably, this approach enables complete and loss-free recovery of the LED chip, offering a practical and efficient solution for LED e-waste recycling.

Bourlinos, Athanasios B.↗

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage V for is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in quantum wells has proven to be an important factor reducing V for . However, this does not suffice in the case of green LEDs because of their larger polarization-induced barrier. V-shaped defects (V-defects) have been proposed as another key factor in reducing V for to allow lateral injection into multiple quantum wells, thus bypassing the multiple energy barriers incurred by vertical transport. In this paper, to model carrier transport in the whole LED, we consider both random-alloy and V-defect effects. A fully two-dimensional drift-diffusion charge-control solver is used to model both effects. The results indicate that the turn-on voltages for blue and green LEDs are both affected by random alloy fluctuations and the V-defect density. For green LEDs, V for decreases more due to V-defects, where the smaller polarization barrier at the V-defect sidewall is the major path for lateral carrier injection. Then, we discuss how the V-defect density and size affects the results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

CALiPER Report 21.3: Cost-Effectiveness of Linear (T8) LED Lamps

Meeting performance expectations is important for driving adoption of linear LED lamps, but cost-effectiveness may be an overriding factor in many cases. Linear LED lamps cost more initially than fluorescent lamps, but energy and maintenance savings may mean that the life-cycle cost is lower. This report details a series of life-cycle cost simulations that compared a two-lamp troffer using LED lamps (38 W total power draw) or fluorescent lamps (51 W total power draw) over a 10-year study period. Variables included LED system cost ($40, $80, or $120), annual operating hours (2,000 hours or 4,000 hours), LED installation time (15 minutes or 30 minutes), and melded electricity rate ($0.06/kWh, $0.12/kWh, $0.18/kWh, or $0.24/kWh). A full factorial of simulations allows users to interpolate between these values to aid in making rough estimates of economic feasibility for their own projects. In general, while their initial cost premium remains high, linear LED lamps are more likely to be cost-effective when electric utility rates are higher than average and hours of operation are long, and if their installation time is shorter.

life-cycle cost simulations↗

Color Maintenance of LEDs in Laboratory and Field Applications

To date, consideration for parametric failure of LED products has largely been focused on lumen maintenance. However, color shift is a cause of early failure for some products, and is especially important to consider in certain applications, such as museum lighting, where visual appearance is critical. Field data collected by the U.S. Department of Energy's (DOE) GATEWAY program for LED lamps installed in museums shows that many have changed color beyond a reasonable tolerance well before their rated lifetimes have been reached. Laboratory data collected by DOE's CALiPER program between 2008 and 2010 reveals that many early LED products shifted beyond acceptable tolerances in as little as a few thousand hours. In contrast, data from the L Prize® program illustrates that commercially available LED products can have exemplary color stability that is unmatched by traditional light sources. In addition to presenting data from the aforementioned DOE programs, this report discusses the metrics used for communicating color shift, and provides guidance for end users on how to monitor chromaticity and what to look for in manufacturer warranties. Also covered are the physical changes that have been shown to lead to color shift in some types of LED packages. As with lamps and luminaires, the data presented for LED packages shows that a wide variety of products are available; in order for specifiers and consumers to make educated choices, more detailed and standardized information is necessary.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

CALiPER Report 21.3: Cost Effectiveness of Linear (T8) LED Lamps

Meeting performance expectations is important for driving adoption of linear LED lamps, but cost-effectiveness may be an overriding factor in many cases. Linear LED lamps cost more initially than fluorescent lamps, but energy and maintenance savings may mean that the life-cycle cost is lower. This report details a series of life-cycle cost simulations that compared a two-lamp troffer using LED lamps (38 W total power draw) or fluorescent lamps (51 W total power draw) over a 10-year study period. Variables included LED system cost ($\$$40, $\$$80, or $\$$120), annual operating hours (2,000 hours or 4,000 hours), LED installation time (15 minutes or 30 minutes), and melded electricity rate ($\$$0.06/kWh, $\$$0.12/kWh, $\$$0.18/kWh, or $\$$0.24/kWh). A full factorial of simulations allows users to interpolate between these values to aid in making rough estimates of economic feasibility for their own projects. In general, while their initial cost premium remains high, linear LED lamps are more likely to be cost-effective when electric utility rates are higher than average and hours of operation are long, and if their installation time is shorter.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Highly Enhanced Luminescence Performance of LEDs via Controllable Layer‐Structured 3D Photonic Crystals and Photonic Crystal Beads

Abstract Controllable layer‐structured 3D photonic crystals (PCs) are prepared using the combination of the Langmuir–Blodgett (LB) technique and layer‐by‐layer stacking method. They are used for research into the influence of the number of the layers on the enhancement of the efficiency of light emission from light‐emitting diodes (LEDs) and quantum dots (QDs). The luminescence properties of blue, green, and white LEDs are improved dramatically while applying such controllable layer‐structured 3D PCs as reflectors and the enhancement efficiencies are shown to increase with PC thickness. In addition, the fluorescence intensity increases 7.8‐fold and 5.4‐fold for red and green QDs, respectively, and the fluorescence intensity can be accurately controlled by using PCs with different layers. In addition, PC beads with yellow and red photonic bandgaps are used to improve the luminescence of a white LED with angle‐independent enhancement. These beads are simply doped into the phosphor without any other treatment. Interestingly, the light intensity of the PC bead based LED is remarkably enhanced. These quantized enhanced effect of light intensity on the thickness of PC layers, along with new generation of PC bead based LED, might offer a strategy for designing high brightness LEDs with energy‐saving performance.

Tian, Yu↗

Cr3+ doped ZnGa2O4 far-red emission phosphor-in-glass: Toward high-power and color-stable plant growth LEDs with responds to all of phytochrome

Highlights: • A high-power and color-stable far-red emission phosphor-convertor LEDs is proposed. • The Cr{sup 3+} ion as the center of luminescence not only increase choice in plant lighting but also provides far-red light. • The ZGO:Cr{sup 3+}-PiG shows a quantum efficiency of ∼52.8%. • The high-power plant growth LEDs was fabricated, triggering providing broad spectral range for plant growth LEDs. - Abstract: In present work, a series of luminescent glass ceramic plates were prepared via phosphor-in-glass (PiG) technology, in which included the phosphor of ZnGa{sub 2}O{sub 4}:Cr{sup 3+} (ZGO:Cr{sup 3+}) and glass host with composition of 30SiO{sub 2}-30ZnO-22B{sub 2}O{sub 3}-12BaO-6Al{sub 2}O{sub 3} as matrix. The structure of ZnGa{sub 2}O{sub 4}:Cr{sup 3+}-based PiG (ZGO:Cr{sup 3+}-PiG) samples are characterized by powder X-ray diffraction, scanning electron microscope, and energy dispersive spectrometer mapping. These phosphors are found to be embedded in glass matrix without interfacial reaction. In addition, the ZGO:Cr{sup 3+}-PiG sample shows a quantum efficiency of ∼52.8% and its fluorescence intensity maintains 68.2% when temperature reaching 150 °C. Finally, high-power and color-stable far-red emission plant growth LEDs was fabricated by ZGO:Cr{sup 3+}-PiG and 400 nm near-UV LED chip, which spectra matches well the absorption of plant's photosynthetic pigments. More importantly, it responds to all of phytochrome, triggering providing broad spectral range for plant growth LEDs.

36 MATERIALS SCIENCE↗

High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules

Commercial light emitting diode (LED) materials - blue (i.e., InGaN/GaN multiple quantum wells (MQWs) for display and lighting), green (i.e., InGaN/GaN MQWs for display), and red (i.e., Al 0.05 Ga 0.45 In 0.5 P/Al 0.4 Ga 0.1 In 0.5 P for display) are evaluated in range of temperature (77–800) K for future applications in high density power electronic modules. The spontaneous emission quantum efficiency (QE) of blue, green, and red LED materials with different wavelengths was calculated using photoluminescence (PL) spectroscopy. The spontaneous emission QE was obtained based on a known model so-called the ABC model. This model has been recently used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED. At 800 K, the spontaneous emission quantum efficiencies are around 40% for blue for lighting and blue for display LED materials, and it is about 44.5% for green for display LED materials. The spontaneous emission QE is approximately 30% for red for display LED material at 800 K. The advance reported in this paper evidences the possibility of improving high temperature optocouplers with an operating temperature of 500 K and above.

36 MATERIALS SCIENCE↗

Research on optimization of cooling structure of LED element (The 2nd report)

This report shows a design guideline on the parts dimension of LED light bulb for heat transfer. LED light bulb is popular owing to the high efficiency and long life. However, LED element is a point heat source. Therefore, LED light bulb has some problems about heat transfer when it is used for lighting. It sometimes causes deterioration by the raise of local temperature, resulting in lowering of efficiency and shorter life. Thus the thermal analysis focused on the number of element, all parts thickness, length, and radiant heat was studied, as systematic report on the points has not been found. In this report, heat radiation was taken into account in the thermal analysis in addition to natural heat convection. Furthermore the temperature of a heat sink model for LED light bulb was measured with thermocouples and thermo-viewer to verify the calculation. The emissivity of aluminum used for the calculation was 0.4. As the result of analysis, it was found that the maximum temperature was mainly influenced by ring length, ring diameter and disk thickness as a design guideline. Concretely, longer length, larger diameter and thicker disk gave lower temperature of LED element. The temperatures of the best and worst model were around 70 °C and 120 °C respectively in the above condition. The temperatures calculated were consistent with those in experiment.

42 ENGINEERING↗

Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution

Here we introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By employing the MCLM, we successfully explain the modulation response of V-pit engineered MQW LEDs, which exhibit an S 21 roll-off slower than –20 dB/decade. Using the proposed model and employing a gradient descent method, we extract effective recombination and escape lifetimes by averaging the carrier behavior across the quantum wells. Our results reveal slower effective carrier recombination and escape in MQW LEDs compared with LEDs emitting from a single QW, indicating the advantages of lower carrier density achieved through V-pit engineering. Notably, the effective carrier recombination time is more than one order of magnitude lower than the effective escape lifetime, suggesting that most carriers in the quantum wells recombine, while the escape process remains weak. To ensure the reliability and robustness of the MCLM, we subject it to a comprehensive threefold validation process. This work confirms the positive impact of spreading carriers into several quantum wells through V-pit engineering. In addition, the MCLM is applicable to other LEDs with a non-uniform carrier distribution, such as micro-LEDs with significant surface recombination and non-uniform lateral carrier profiles.

42 ENGINEERING↗

High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm 2 . LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

Ewing, Jacob J.↗

High-Power Warm-White Hybrid LED Package for Illumination

In this project, an integrated warm-white hybrid light engine was developed. The hybrid approach involves combining phosphor-converted off-white InGaN LEDs and direct-emitting red AlInGaP LEDs in a single light engine to achieve high efficacy together with high color rendering index. We developed and integrated technology improvements in InGaN and AlInGaP die technology, phosphor technology, package architecture and encapsulation, to realize a hybrid warm-white LED package with an efficacy of 140 lm/W at a correlated color temperature of 3000K and a color rendering index of 90, measured under representative operating conditions. This efficacy is 26% higher than the best warm-white LEDs of similar specification that are commercially available at the end of the project. Since the InGaN- and AlInGaP-based LEDs used in the hybrid engine show different behavior as a function of current and temperature, a control system needs to be in place to ensure a stable color point over all operating conditions. In this project, we developed an electronic control circuit that is fully integrated into the light engine in such a way that the module can simply be driven by a conventional single-channel driver. The integrated control circuit uses a switch-mode boost converter topology to control the LED drive currents based on the temperature and the input current of the light engine. A color control performance of 5 SDCM was demonstrated, and improvement to 3 SDCM is considered well within reach. The combination of high efficacy and ease of integration with existing single-channel drivers is expected to facilitate the adoption of the hybrid technology and accelerate the energy savings associated with solid-state lighting. In the product commercialization plan, downlights and indirect-lit troffers have been selected as the first target applications for this product concept. Fully functional integrated prototypes have been developed for both applications, and the business case evaluation is ongoing as of the end of the project.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗