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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Adherens junctions are involved in polarized contractile ring formation in dividing epithelial cells of Xenopus laevis embryos

Highlights: • The actomyosin contractile ring formation is polarized in epithelial cells. • Activation of the contractile ring is polarized in epithelial cells. • Adherens junctions are involved in the kinetics of the contractile ring formation. • Adherens junctions and the contractile ring are linked from the onset of cytokinesis. • High temporal resolution microscopy of epithelial cells in the Xenopus embryos. Cells dividing in the plane of epithelial tissues proceed by polarized constriction of the actomyosin contractile ring, leading to asymmetric ingression of the plasma mem brane. Asymmetric cytokinesis results in the apical positioning of the actomyosin contractile ring and ultimately of the midbody. Studies have indicated that the contractile ring is associated with adherens junctions, whose role is to maintain epithelial tissue cohesion. However, it is yet unknown when the contractile ring becomes associated with adherens junctions in epithelial cells. Here, we examined contractile ring formation and activation in the epithelium of Xenopus embryos and explored the implication of adherens junctions in the contractile ring formation. We show that accumulation of proteins involved in contractile ring formation and activation is polarized, starting at apical cell-cell contacts at the presumptive division site and spreading within seconds towards the cell basal side. We also show that adherens junctions are involved in the kinetics of contractile ring formation. Our study reveals that the link between the adherens junctions and the contractile ring is established from the onset of cytokinesis.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2023

Microscopic theory, analysis, and interpretation of conductance histograms in molecular junctions

Molecular electronics break-junction experiments are widely used to investigate fundamental physics and chemistry at the nanoscale. Reproducibility in these experiments relies on measuring conductance on thousands of freshly formed molecular junctions, yielding a broad histogram of conductance events. Experiments typically focus on the most probable conductance, while the information content of the conductance histogram has remained unclear. Here we develop a microscopic theory for the conductance histogram by merging the theory of force-spectroscopy with molecular conductance. The procedure yields analytical equations that accurately fit the conductance histogram of a wide range of molecular junctions and augments the information content that can be extracted from them. Our formulation captures contributions to the conductance dispersion due to conductance changes during the mechanical elongation inherent to the experiments. In turn, the histogram shape is determined by the non-equilibrium stochastic features of junction rupture and formation. The microscopic parameters in the theory capture the junction’s electromechanical properties and can be isolated from separate conductance and rupture force (or junction-lifetime) measurements. The predicted behavior can be used to test the range of validity of the theory, understand the conductance histograms, design molecular junction experiments with enhanced resolution and molecular devices with more reproducible conductance properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1991

Progress toward the development of dual junction GaAs/Ge solar cells

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Lillington, D. R.↗
NASA NTRS1991

Progress toward a 30 percent-efficient, monolithic, three-junction, two-terminal concentrator solar cell for space applications

Component efficiencies of 0.2/sq cm cells at approximately 100x AMO light concentration and 80 C temperatures are not at 15.3 percent for a 1.9 eV AlGaAs top cell, 9.9 percent for a 1.4 eV GaAs middle cell under a 1.9 eV AlGaAs filter, and 2.4 percent for a bottom 1.0 eV InGaAs cell under a GaAs substrate. The goal is to continue improvement in these performance levels and to sequentially grow these devices on a single substrate to give 30 percent efficient, monolithic, two-terminal, three-junction space concentrator cells. The broad objective is a 30 percent efficient monolithic two-terminal cell that can operate under 25 to 100x AMO light concentrations and at 75 to 100 C cell temperatures. Detailed modeling predicts that this requires three junctions. Two options are being pursued, and both use a 1.9 eV AlGaAs top junction and a 1.4 eV GaAs middle junction grown by a 1 atm OMVPE on a lattice matched substrate. Option 1 uses a low-doped GaAs substrate with a lattice mismatched 1.0 eV InGaAs cell formed on the back of the substrate. Option 2 uses a Ge substrate to which the AlGaAs and GaAs top junctions are lattice matched, with a bottom 0.7 eV Ge junction formed near the substrate interface with the GaAs growth. The projected efficiency contributions are near 16, 11, and 3 percent, respectively, from the top, middle, and bottom junctions.

Partain, L. D.↗
NASA NTRS1991

Performance of NbN superconductive tunnel junctions as SIS mixers at 205 GHz

Small area (less than 1 sq micron), high-current-density NbN/MgO/NbN tunnel junctions with I-V characteristics suitable for high-frequency mixers have been fabricated. Mesa-geometry junctions with an area of about 1 sq micron and critical current density of 5-10 kA/sq cm are integrated with superconducting microstrip lines designed to resonate out the junction capacitance. A study was made of the mixer gain and noise performance near 205 GHz as a function of the inductance provided by the microstrip line. This has confirmed, at a high millimeter-wave frequency, values of junction capacitance of 85 fF/sq micron and recently measured values of a magnetic penetration depth of 380 nm. Mixer noise temperatures as low as 134 K at 1.5 K have been obtained for properly tuned junctions. A significant improvement in mixer performance on cooling from 4.2 K to 1.5 K was observed. Edge-geometry junctions with an area of 0.3 sq microns and critical current density of 18-25 kA/sq cm have also been fabricated. These junctions give a mixer noise temperature of 145 K at 4.2 K without the use of integrated tuning elements. These are the best results ever achieved for NbN-based SIS mixers.

Mcgrath, W. R.↗
NASA NTRS2002

Progress in the Development of Metamorphic Multi-Junction III-V Space-Solar Cells at Essential Research Incorporated

Theoretical calculations have shown that highest efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single junction 1.1 eV and 1.2 eV InGaAs solar cells by Essential Research Incorporated (ERI), interest has grown in the development of multi-junction cells of this type using graded buffer layer technology. ERI is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 28%, and 100-sun efficiency of 37.5%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort at ERI involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AM0 efficiency of 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. In case of the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.

Sinharoy, Samar↗
NASA NTRS2017

Metallic Junction Thermoelectric Device Simulations

Thermoelectric junctions made of semiconductors have existed in radioisotope thermoelectric generators (RTG) for deep space missions, but are currently being adapted for terrestrial energy harvesting. Unfortunately, these devices are inefficient, operating at only 7% efficiency. This low efficiency has driven efforts to make high-figure-of-merit thermoelectric devices, which require a high electrical conductivity but a low thermal conductivity, a combination that is difficult to achieve. Lowered thermal conductivity has increased efficiency, but at the cost of power output. An alternative setup is to use metallic junctions rather than semiconductors as thermoelectric devices. Metals have orders of magnitude more electrons and electronic conductivities higher than semiconductors, but thermal conductivity is higher as well. To evaluate the viability of metallic junction thermoelectrics, a two dimensional heat transfer MATLAB simulation was constructed to calculate efficiency and power output. High Seebeck coefficient alloys, Chromel (90%Ni-10%Cr) and Constantan (55%Cu-45%Ni), produced efficiencies of around 20-30%. Parameters such as the number of layers of junctions, lateral junction density, and junction sizes for both series- and parallel-connected junctions were explored.

Duzik, Adam J.↗
DOE OSTI2022

Impact of ferromagnetic electrode length and thickness on Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSD)

A knowledge gap exists about the impact of variation in length and thickness of ferromagnetic(FM) electrodes on molecular spintronics devices’ ability to manifest molecular coupling impact. Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSDs) are potential candidates for inventing highly correlated materials and devices and investigating the fundamental science of organic spintronics. This paper reports our experi- mental observations providing the dramatic impact of variation in ferromagnetic electrode length and thickness on paramagnetic molecule-based MTJMSD. Room temperature transport studies were performed to investigate the effect of FM electrode thickness. On the other hand, magnetic force microscopy measurements were con- ducted to understand the effect of FM electrode length extending beyond the molecular junction area, i.e., the site where paramagnetic molecules bridged between two FM. In the strong molecular coupling regime, transport study suggested thickness variation caused ~1000 to million-fold differences in junction conductivity. MFM study revealed near-zero magnetic contrast for pillar-shaped MTJMSD without any extended FM electrode. However, MFM images showed a multitude of microscopic magnetic phases on cross junction shaped MTJMSD where FM electrodes extended beyond the junction area. To understand the intriguing experimental results, we conducted an in-depth theoretical study using Monte Carlo Simulation (MCS) approach. MCS study utilized a Heisenberg atomic model of cross junction shaped MTJMSD to gain insights about room temperature transport and MFM experimental observations of microscopic MTJMSD. To make this study applicable for a wide variety of MTJMSDs, we systematically studied the effect of variation in molecular coupling strength between magnetic molecules and ferromagnetic (FM) electrodes of various dimensions. Here, our theoretical results suggest 25 atoms thick FM electrode show very weak molecular coupling impact and of the same order of experimentally studied FM electrode dimensions showing weak effect. Also, MCS results agree with experimentally observed multiple magnetic phases on lengthy FM electrodes of an MTJMSD.

42 ENGINEERING↗
DOE OSTI2023

Spin Solar Cell Phenomenon on a Single-Molecule Magnet (SMM) Impacted CoFeB-Based Magnetic Tunnel Junctions

The single-molecule magnet (SMM) is demonstrated here to transform conventional magnetic tunnel junctions (MTJs), a memory device used in present-day computers, into solar cells. For the first time, we demonstrated an electronic spin-dependent solar cell effect on an SMM-transformed MTJ under illumination from unpolarized white light. We patterned cross-junction-shaped devices to form a CoFeB/MgO/CoFeB-based MTJ. The MgO barrier thickness at the intersection between the two exposed junction edges was less than the SMM extent, which enabled the SMM molecules to serve as channels to conduct spin-dependent transport. The SMM channels yielded a region of long-range magnetic ordering around these engineered molecular junctions. Our SMM possessed a hexanuclear [Mn 6 (μ 3 -O) 2 (H 2 N-sao) 6 (6-atha) 2 (EtOH) 6 ] [H 2 N-saoH = salicylamidoxime, 6-atha = 6-acetylthiohexanoate] complex and thioesters end groups to form bonds with metal films. SMM-doped MTJs were shown to exhibit a solar cell effect and yielded ≈80 mV open-circuit voltage and ≈10 mA/cm 2 saturation current density under illumination from one sun equivalent radiation dose. A room-temperature Kelvin Probe AFM (KPAFM) study provided direct evidence that the SMM transformed the electronic properties of the MTJ’s electrodes over a lateral area in excess of several thousand times larger in extent than the area spanned by the molecular junctions themselves. As a result, the decisive factor in observing this spin-photovoltaic effect is the formation of SMM spin channels between the two different ferromagnetic electrodes, which in turn is able to catalyze the long-range transformation in each electrode around the junction area.

14 SOLAR ENERGY↗
DOE OSTI2022

The influence of Holliday junction sequence and dynamics on DNA crystal self-assembly

The programmable synthesis of rationally engineered crystal architectures for the precise arrangement of molecular species is a foundational goal in nanotechnology, and DNA has become one of the most prominent molecules for the construction of these materials. In particular, branched DNA junctions have been used as the central building block for the assembly of 3D lattices. Here, crystallography is used to probe the effect of all 36 immobile Holliday junction sequences on self-assembling DNA crystals. Contrary to the established paradigm in the field, most junctions yield crystals, with some enhancing the resolution or resulting in unique crystal symmetries. Unexpectedly, even the sequence adjacent to the junction has a significant effect on the crystal assemblies. Six of the immobile junction sequences are completely resistant to crystallization and thus deemed “fatal,” and molecular dynamics simulations reveal that these junctions invariably lack two discrete ion binding sites that are pivotal for crystal formation. The structures and dynamics detailed here could be used to inform future designs of both crystals and DNA nanostructures more broadly, and have potential implications for the molecular engineering of applied nanoelectronics, nanophotonics, and catalysis within the crystalline context.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

Single-junction flat-plate terrestrial solar cells are fundamentally limited to about 30% solar-to-electricity conversion efficiency, but multiple junctions and concentrated light make much higher efficiencies practically achievable. Until now, four-junction III–V concentrator solar cells have demonstrated the highest solar conversion efficiencies. Here, we demonstrate 47.1% solar conversion efficiency using a monolithic, series-connected, six-junction inverted metamorphic structure operated under the direct spectrum at 143 Suns concentration. Furthermore, when tuned to the global spectrum, a variation of this structure achieves a 1-Sun global efficiency of 39.2%. Nearly optimal bandgaps for six junctions were fabricated using alloys of III–V semiconductors. To develop these junctions, it was necessary to minimize threading dislocations in lattice-mismatched III–V alloys, prevent phase segregation in metastable quaternary III–V alloys and understand dopant diffusion in complex structures. Further reduction of the series resistance within this structure could realistically enable efficiencies over 50%.

14 SOLAR ENERGY↗
DOE OSTI2021

Multi-junction solar cells paving the way for super high-efficiency

In order to realize a clean energy society by using renewable energies, high-performance solar cells are a very attractive proposition. The development of high-performance solar cells offers a promising pathway toward achieving high power per unit cost for many applications. As state-of-the-art of single-junction solar cells are approaching the Shockley–Queisser limit of 32%–33%, an important strategy to raise the efficiency of solar cells further is stacking solar cell materials with different bandgaps to absorb different colors of the solar spectrum. The III–V semiconductor materials provide a relatively convenient system for fabricating multi-junction solar cells providing semiconductor materials that effectively span the solar spectrum as demonstrated by world record efficiencies (39.2% under one-sun and 47.1% under concentration) for six-junction solar cells. This success has inspired attempts to achieve the same with other materials like perovskites for which lower manufacturing costs may be achieved. Recently, Si multi-junction solar cells such as III–V/Si, II–VI/Si, chalcopyrite/Si, and perovskite/Si have become popular and are getting closer to economic competitiveness. Here, we discuss the perspectives of multi-junction solar cells from the viewpoint of efficiency and low-cost potential based on scientific and technological arguments and possible market applications. In addition, this article provides a brief overview of recent developments with respect to III–V multi-junction solar cells, III–V/Si, II–VI/Si, perovskite/Si tandem solar cells, and some new ideas including so-called 3rd generation concepts.

14 SOLAR ENERGY↗
DOE OSTI2024

Improved coherence in optically defined niobium trilayer-junction qubits

Niobium offers the benefit of increased operating temperatures and frequencies for Josephson junctions, which are the core component of superconducting devices. However existing niobium processes are limited by more complicated fabrication methods and higher losses than now-standard aluminum junctions. Combining recent trilayer fabrication advancements, methods to remove lossy dielectrics and modern superconducting qubit design, we revisit niobium trilayer junctions and fabricate all-niobium transmons using only optical lithography. We characterize devices in the microwave domain, measuring coherence times up to $62~\mu$s and an average qubit quality factor above $10^5$: much closer to state-of-the-art aluminum-junction devices. We find the higher superconducting gap energy also results in reduced quasiparticle sensitivity above $0.16~$K, where aluminum junction performance deteriorates. Our junction process is readily applied to standard optical-based foundry processes, opening new avenues for direct integration and scalability, and paves the way for higher-temperature and higher-frequency quantum devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Superconducting proximity effect in a transparent van der Waals superconductor-metal junction

Here, we report on Andreev reflections at clean NbSe 2 -bilayer graphene junctions. The high transparency of the junction, which manifests as a large conductance enhancement of up to 1.8, enables us to see clear evidence of a proximity-induced superconducting gap in bilayer graphene and two Andreev reflections through a vertical NbSe 2 -graphene and a lateral graphene-graphene junction, respectively. Quantum transport simulations capture the complexity of the experimental data and illuminate the impact of various microscopic parameters on the transmission of the junction. Our work establishes the practice and understanding of an all-van-der-Waals, high-performance superconducting junction. The realization of a highly transparent proximized graphene-graphene junction opens up possibilities to engineer emergent quantum phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Bipolar Membranes with an Electrospun 3D Junction

Freestanding bipolar membranes (BPMs) with an entirely new and transformative morphology were fabricated and characterized. The key disruptive design element was a water-splitting/water-generation junction layer of finite thickness composed of interwoven and interlocking electrospun anion-exchange polymer (AEP) fibers and cation-exchange polymer (CEP) fibers. Methods were developed to sandwich the 3D junction layer between two pre-formed dense AEP and CEP films., with the closure of all interfiber voids, where the processing steps are easily incorporated into a commercial roll-to-roll membrane manufacturing scheme. A series of membranes were made using different polymers and junction layers to identify the optimum morphology and composition for water-splitting and water-generation applications. For water splitting, the 3D junction BPMs worked remarkably well with operating current densities at/above 1.0 A/cm2 (10X greater than commercial BPMs) at a transmembrane voltage drop of only 1.1 V. In water generation mode, the 3D junction BPMs operated at 0.5 A/cm2, a world-record current density. The membranes were found to exhibit outstanding durability and can be manufactured at scale for low cost. The high operating current densities and stable long-term operation are due to the 3D junction layer design, where there is a high interfacial area for water splitting or water generation reactions and where the interlocking fibers prevent delamination of the outer films. These new BPMs are ideal candidate materials for both existing water-splitting electrodialysis separations and new electrochemical processes, such as large-scale direct air capture of CO 2 , reactors for CO 2 reduction, self-hydrating fuel cells, and redox flow batteries.

30 DIRECT ENERGY CONVERSION↗
NASA NTRS1989

NbN/MgO/NbN SIS tunnel junctions for submm wave mixers

The authors report on the fabrication and testing of all-refractory NbN/MgO/NbN SIS (superconductor-insulator-superconductor) tunnel junctions for use as high-frequency mixers. Progress in the development of techniques for the fabrication of submicron-area tunnel junctions is described. Junction structures which have been investigated include mesa, crossline, and edge geometries. Using reactive sputtering techniques, NbN tunnel junctions with critical currents in excess of 104 A/sq cm have been fabricated with Vm values as high as 65 mV and areas down to 0.1 sq micron. Specific capacitance measurements on NbN/MgO/NbN mesa-type tunnel junctions give values in the range 60-90 fF/sq micron. These SIS tunnel junctions have been integrated with antennas and coupling structures for mixer tests in a waveguide receiver at 207 GHz. Preliminary mixer results are reported.

Stern, J. A.↗
NASA NTRS1989

The effects of ion gun beam voltage on the electrical characteristics of NbCN/PbBi edge junctions

The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.

Lichtenberger, A. W.↗
NASA NTRS1998

Incompressible Turbulent Wing-Body Junction Flow

The overall objective of this study is to contribute to the optimized design of fan bypass systems in advanced turbofan engines. Increasing the engine bypass ratios have provided a major boost in engine performance improvement over the last fifty years. An engine with high bypass ratio (11-16:1) such as the Advanced Ducted Propulsion (ADP) is being developed and is expected to provide an additional 25% improvement in overall efficiency over the early turbofans. Such significant improvements in overall efficiency would reduce the cost per seat mile, which is a major government and Industry challenge for the 21th century. The research is part of the Advanced Subsonic Technology (AST) program that involves a NASA, U.S. Industry and FAA partnership with the goal of a safe and highly productive global air transportation system. The immediate objective of the study is to perform numerical simulation of duct-strut interactions to elucidate the loss mechanisms associated with this configuration that is typical of advanced turbofan engines such as ADP. However, at present experimental data for a duct-strut configuration are not available. Thus, as a first step a wing-body junction flow would be studied and is the specific objective of the present study. At the outset it is to be recognized that while duct-strut interaction flow is similar to that of wing-body junction flows, there are some differences owing to the presence of a wall at both ends of the strut. Likewise, some differences are due to the sheared inflow (as opposed to a uniform inflow) velocity profile. It is however expected that some features of a wing-body junction flow would persist. Next, some of the salient aspects of the complex flow near a wing-body junction, as revealed by various studies reported in the literature will be reviewed. One of the principle characteristics of the juncture flow, is the presence of the mean flow components in a plane perpendicular to the direction of the oncoming free-stream flow. The lateral curvature of the wing/strat causes the oncoming turbulent layer to skew about am axis (x-axis) parallel to the plane (xz-plane) of the mean shear. This is the principle mechanism for the generation of secondary flow. Such skew-induced secondary flows are slow to be attenuated by Reynolds stresses. Additional contribution to the generation of secondary flow comes from anisotropies in Reynolds stresses. Upstream of the strut, the mean-vorticity is directed span wise (along the y-direction). The presence of secondary flow in the vicinity of the strut causes the vorticity to stretch around the obstacle in a horse-shoe shape, with each leg having a vorticity of the opposite sense. The blockage effect of the strut imposes a severe adverse pressure gradient on the oncoming turbulent shear layer, causing boundary layer separation ahead of the leading edge, resulting in a vortex that rolls up and flows downstream into the juncture region. The separation vortices trailing in the wake of the wing can alter the lift or drag characteristics of the surfaces downstream of the wing-body juncture. Likewise, on submarines, the wake flow behind the appendage can degrade the performance of the propeller located downstream. The complex nature of this flow is caused by the presence of all six components of Reynolds stresses. Devenport and Simpson report that in the vicinity of the horse-shoe vortex there is intense recirculation with turbulent stresses being much larger than those normally observed in turbulent flows. These features contribute to making this flow a challenge to predict numerically. Some of the past studies provide useful insights into this flow that would guide our numerical efforts. In measurements reported by Shabaka and Bradshaw, the eddy viscosity tensor is seen to be non-isotropic and has negative components in certain regions. In an effort to evaluate the closure assumptions of various turbulence models, Devenport and Simpson used their own extensive measurements in juncture flows around the nose of a wing-body junction. Measured values of mean-velocity and/or turbulence kinetic energy was used to predict the magnitude of the shear stress vector. Algebraic stress models performed the best followed by Cebeci-Smith eddy viscosity model. The flow is reported to be dominated by a pressure field produced by the wing and the velocity field generated by the horseshoe vortex that is wrapped around the junction between the wing and wall. Kubendran et al. conclude from an experimental study that the shape of leading edge of the wing as characterized by its slenderness ratio is a major factor in determining the flow fields in the juncture region. The more thinner the leading edge of the juncture, the weaker the horseshoe vortex is. Also, with a slender leading edge, the secondary flow in the juncture would be due mainly to the cross-stream gradients of Reynolds stresses rather than due to a lateral skewing of the shear layer.

Krishnamurthy, R.↗