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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Radiation tolerance of aluminum-doped silicon

Data are presented that indicate that heat-treated Czochralski-grown aluminum doped silicon that undergoes an appreciable resistivity increase during heating at approximately 450 C is significantly more resistant to both neutron and gamma irradiation than boron doped material (or aluminum doped material that either has not been heat treated or does not experience an appreciable resistivity change during such a treatment). Data interpretation is, however, quite difficult due to the occurrence of severe trapping effects in heat treated material.

Curtis, O. L., Jr.↗
NASA NTRS1985

Performance and temperature dependencies of proton irradiated n/p GaAs and n/p silicon cells

The n/p homojunction GaAs cell is found to be more radiation resistant than p/nheteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increase temperature dependency of maximum power for the GaAs n/p cells is attributed largely to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Weinberg, I.↗
NASA NTRS1985

Photon radiation effects on CdS/CuInSe2 thin film solar cells

The unknown tolerance of CuInSe2 cells to proton irradiation, was tested. It was shown that CdS/CuInSe2 solar cells have an inherent tolerance to irradiation by 1 MeV electrons up to at least 2 x 10 to the 16th power electrons/sq cm. Eleven, unencapsulated, 1 sq cm cells deposited on alumina substrates were irradiated with 1 MeV protons at normal incidence. The cells were exposed to six fluences ranging from 2.5 x 10 to the 10th power protons/sq cm to 5.0 x 10 to the 13th power protons/sq cm. After each interval of exposure, the cells were removed from the radiation chamber to undergo current/voltage characterization. It is shown that none of the cells electrical characteristics exhibited any degradation up to and including a fluence of 1 x 10 to the 11th power protons/sq cm. At fluences greater than this, the damage to the CuInSe2 cells V sub oc and fill factor (FF) was more severe than that exhibited by the Isc. The CuInSe2 cells proved to be approximately a factor of 50 more resistant to 1 MeV proton irradiation than silicon or gallium arsenide cells. Annealing of a CuInSe2 cell at 225 deg C for 6 minutes restored it to within 95% of its initial efficiency.

Dursch, H.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1987

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Weinberg, I.↗
NASA NTRS1989

Progress in indium phosphide solar cell research

Progress, dating from the start of the Lewis program, is reviewed emphasizing processing techniques which have achieved the highest efficiencies in a given year. To date, the most significant achievement has been attainment of AM0 total area efficiencies approaching 19 percent. Although closed tube diffusion is not considered to be an optimum process, reasonably efficient 2cm x 2cm and 1cm x 2cm InP cells have been produced in quantity by this method with a satellite to be launched in 1990 using these cells. Proton irradiation of these relatively large area cells indicates radiation resistance comparable to that previously reported for smaller InP cells. A similar result is found for the initial proton irradiations of ITO/InP cells processed by D. C. sputtering. With respect to computer modelling, a comparison of n/p homojunction InP and GaAs cells of identical geometries and dopant concentrations has confirmed the superior radiation resistance of InP cells under 1 MeV electron irradiations.

Weinberg, Irving↗
NASA NTRS1978

Continued development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts.

Bratt, P. R.↗
NASA NTRS1980

GaAs shallow-homojunction solar cells

With the objective of demonstrating the feasibility of fabricating 2 x 2 cm efficient, shallow homojunction GaAs solar cells for space applications, this program addresses the basic problems of material preparation and device fabrication. Significant progress was made and conversion efficiencies close to 16 percent at AM0 were obtained on 2 x 2 cm cells. Measurements and computer analyses on the n(+)/p/p(+) shallow homojunction cells indicate that such cell configuration should be very resistant to 1 MeV electron irradiation.

Fan, J. C.↗
NASA NTRS1980

Proton-induced degradation of VUV transmission of LiF and MgF2

Proton-induced degradation of vacuum ultraviolet (VUV) transmittance of LiF and MgF2 was measured for 85- and 600-MeV protons for a fluence up to 2.8 x 10 to the 13th p/sq cm. Transmittances were measured from 105 to 210 nm. When the irradiation level for a given material is expressed in terms of absorbed energy per unit of volume of crystal, 85- and 600-MeV protons produce the same degradation. MgF2 is substantially more radiation resistant than LiF in the VUV. Irradiation of LiF with 1.8 x 10 to the 13th p/sq cm at 85 MeV changed the transmittance of the hydrogen Ly-alpha line at 121.6 nm from 55 to 23%. The corresponding change for MgF2 was from 52 to 42% for 2.8 x 10 to the 13th p/sq cm.

Reft, C. S.↗
NASA NTRS1985

Performance and temperature dependencies of proton irradiated n/p and p/n GaAs and n/p silicon cells

n/p homojunction GaAs cells are found to be more radiation resistant than p/n heteroface GaAs under 10 MeV proton irradiation. Both GaAs cell types outperform conventional silicon n/p cells under the same conditions. An increased temperature dependency of maximum power for the GaAs n/p cells is attributed to differences in Voc between the two GaAs cell types. These results and diffusion length considerations are consistent with the conclusion that p-type GaAs is more radiation resistant than n-type and therefore that the n/p configuration is possibly favored for use in the space radiation environment. However, it is concluded that additional work is required in order to choose between the two GaAs cell configurations.

Weinberg, I.↗
NASA NTRS1990

Effect of neutron irradiation on the thermoelectric properties of SiGe alloys

Zone-leveled and hot-pressed n- and p-type Si80Ge20 alloys were irradiated with neutrons to a fluence of 4 x 1018 n/sq cm and to a fluence of 5.4 x 1019 n/sq cm at a temperature of approximately 200-300 C. The effect of neutron irradiation on the thermoelectric properties of these alloys was evaluated. The carrier concentration and mobility (and hence the resistivity) were measured at room temperature while the thermal diffusivity was measured at 177-192 C both before and after the irradiation and after each subsequent 2-h heat treatment at 350 C, 600, and 1000 C. The irradiation increased the resistivity significantly, but the thermal conductivity decreased only by about 10-15 percent. This tends to indicate that the radiation produced only small defects (single pairs and small vacancy chains). The samples all returned to almost exactly their preirradiation state after the 1000 C anneal. This indicates that SiGe alloys can be operated in this neutron fluence at high temperatures without a degradation of thermoelectric properties.

Vandersande, Jan W.↗
NASA NTRS1988

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Weinberg, I.↗
NASA NTRS1988

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

The radiation resistance of ITO/InP cells processed by dc magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistances significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectrosocpy, and determinations of surface conductivity type are used to investigate the configuration of the ITO/InP cells. It is concluded that these latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Weinberg, I.↗
NASA NTRS1987

Comparative performance of diffused junction indium phosphide solar cells

A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.

Weinberg, I.↗
NASA NTRS1998

Radiation-induced instability and its relation to radiation carcinogenesis

PURPOSE: A model that identifies radiation-induced genetic instability as the earliest cellular event in the multi-step sequence leading to radiation-induced cancer was previously proposed. In this paper ongoing experiments are discussed which are designed to test this model and its predictions in mouse mammary epithelial cells. RESULTS: Several lines of evidence are presented that appear to support this model: first, the development of delayed mutations in p53 following irradiation in altered growth variants; secondly, the high frequencies for the induction of both instability and transformation following irradiation in mammary epithelial cells; and finally, the demonstration that susceptibility to the induction of cytogenetic instability is a heritable trait that correlates with susceptibility to transformation and radiation-induced mammary cancer. Mice resistant to transformation and mammary cancer development are also resistant to the development of instability after irradiation. In contrast, mice sensitive to transformation and cancer are also sensitive to the development of cytogenetic instability. CONCLUSIONS: Data from this laboratory and from the studies cited above suggest a specific, and perhaps unique, role for radiation-induced instability as a critical early event associated with initiation of the carcinogenic process.

Review↗
NASA NTRS1987

Radiation characteristics of low resistivity float zone silicon solar cells

The effects of 1-MeV electron irradiation on silicon solar cells with AM0 efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high-efficiency terrestrial silicon solar cells. Results indicate that these cells are more susceptible to radiation damage. However, they do maintain a greater overall power output than conventional cells to which they were compared. These cells do not demonstrate post-electron-irradiation photon decay as has been described for cells processed on 1-10 ohm-cm FZ silicon.

Crotty, G. T.↗