Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Ion implantation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Tuning Chiral Anomaly Signature in a Dirac Semimetal via Fast-Ion Implantation

Cd 3 As 2 is a Dirac semimetal that hosts a chiral anomaly, functioning as a platform to realize energy applications. We use fast-ion implantation to enhance the negative longitudinal magnetoresistance (NLMR)─signature of a chiral anomaly─in Nb-doped Cd 3 As 2 thin films. High-energy ion implantation is used to investigate semiconductors and nuclear materials but is rarely employed to study topological materials. We use electrical transport and transmission electron microscopy to characterize the NLMR and crystallinity of Nb-doped Cd 3 As 2 . We find surface-doped thin films display a maximum NLMR around B = 7 T and bulk-doped thin films display a maximum over B = 9 T─all while maintaining crystallinity. This is more than a 100% relative enhancement of the maximum NLMR compared to pristine Cd 3 As 2 . As a result, our work demonstrates the potential of high-energy ion implantation as a practical route to explore chiralitronic properties in topological semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1972

Development of ion implanted gallium arsenide transistors

Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.

Hunsperger, R.↗
DOE OSTI2023

Combining femtosecond laser annealing and shallow ion implantation for local color center creation in diamond

A common technique for color center creation in wideband gap semiconductors employs ion implantation and a subsequent thermal annealing. In general, this annealing process is conducted in a vacuum oven. Here, we exploit the annealing based on femtosecond laser pulses. For that purpose, we implant fluorine ions at 54 keV and chlorine ions at 74 keV in diamond and perform micrometer precise annealing using focused femtosecond laser pulses at 800 ± (30) nm with different pulse numbers and repetition rates. In this way, we were able to create shallow spots with color centers of varying brightness.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2003

High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

Alterovitz, S. A.↗
DOE OSTI2021

A fitting algorithm for optimizing ion implantation energies and fluences

In this work we describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given Ν energies, we then optimize a set of Ν energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum Ν such that the error between the target defect density profile and the defect density profile generated by the Ν energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 μm surface layers of 15 N or vacancies (using 4 He).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Stress engineering for crack and dendrite prevention in solid electrolytes via ion implantation

Solid-state batteries represent a promising technology that offers safer and more densely packed energy storage. A primary cause of failure in solid-state cells is the penetration of metal dendrites through the solid electrolyte. Here, we report that fluorine-ion implantation can enhance the mechanical resistance of solid electrolyte Li 6.5 La 3 Zr 1.5 Ta 0.5 O 12 to dendrite propagation by inducing residual compressive stress in the subsurface of the electrolyte. Ion implantation modifies subsurface residual stress and also alters the electrolyte’s surface, resulting in multifunctional enhancement. The combined chemical and mechanical effects of ion implantation enable reversible lithium metal stripping and plating at elevated current densities while enhancing air stability and mitigating the formation of a harmful carbonate layer at the surface. This study provides new insights into a scalable dendrite-suppression strategy for designing solid-state batteries suitable for cycling at room temperature and low stack pressures.

25 ENERGY STORAGE↗
DOE OSTI2025

Ion implantation of magnesium guests into type II silicon clathrate films: an alternate approach to doping a cage-like silicon allotrope

Type II silicon clathrates, with their unique cage-like structure, offer exciting potential for applications in thermoelectrics, photovoltaics, and quantum materials due to their tunable electronic and thermal properties. This study investigates the use of ion implantation to introduce targeted guest atoms, which act as dopants, into type II Si clathrate films. The focus is on Mg as a test case for implantation, a dopant previously unreported in type II Si clathrates. The effects of ion implantation on the metastable Si clathrate structure were examined through systematic investigation of implant parameters. Time-of-flight secondary ion mass spectrometry depth profiling confirmed the successful implantation of Mg, while X-ray diffraction and confocal Raman spectroscopy demonstrated minimal structural damage at lower fluences, with the clathrate framework retaining its integrity without converting to other phases. At the higher end of the fluence range implantation caused localized transitions from clathrate to amorphous silicon. Implant activation using rapid thermal annealing was examined with the clathrate structure stable up to 500 °C and being converted to diamond silicon above this temperature. Post-implantation and activation structural characterization showed evidence of damage reversal. Electron paramagnetic resonance studies provided indirect evidence of dopant incorporation. These findings establish a foundation for introducing alternative guests/dopants into the Si clathrate cages through ion implantation, advancing their tunability for next-generation quantum and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Synthesis of magnesiowüstite nanocrystallites embedded in an amorphous silicate matrix via low energy multiple ion implantations

The synthesis process is presented for experimentally simulating modifications in cosmic dust grains using sequential ion implantations or irradiations followed by thermal annealing. Cosmic silicate dust analogues were prepared via implantation of 20–80 keV Fe - , Mg - , and O - ions into commercially available p-type silicon (100)wafers. The as-implanted analogues are amorphous with a Mg/(Fe+Mg) ratio of 0.5 tailored to match theoretical abundances in circumstellar dusts. Before the ion implantations were performed, Monte-Carlo-based ion-solid interaction codes were used to model the dynamic redistribution of the implanted atoms in the silicon substrate. 600 keV helium ion irradiation was performed on one of the samples before thermal annealing. Two samples were thermally annealed at a temperature appropriate for an M-class stellar wind, 1000 K, for 8.3 h in a vacuum chamber with a pressure of 1 x 10 -7 torr. The elemental depth profiles were extracted utilizing Rutherford Backscattering Spectrometry (RBS) in the samples before and after thermal annealing. X-ray diffraction (XRD)analysis was employed for the identification of various phases in crystalline minerals in the annealed analogues. Transmission electron microscopy (TEM) analysis was utilized to identify specific crystal structures. RBS analysis shows redistribution of the implanted Fe, Mg, and O after thermal annealing due to incorporation into the crystal structures for each sample type. XRD patterns along with TEM analysis showed nanocrystalline Mg and Fe oxides with possible incorporation of additional silicate minerals.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1980

A study of the factors which control the efficiency of ion-implanted silicon solar cells

The objective of this work was to determine experimentally the ion-implantation parameters and furnace annealing conditions required to produce high-efficiency solar cells. A comprehensive experimental study was conducted in which the optimum ion-implantation parameters were found by a systematic variation of the implant parameters followed by detailed studies of solar-cell devices. Two furnace heat-treatment techniques were found which effectively anneal the implanted layers and at the same time preserve or improve the diffusion length in the bulk silicon. Detailed characteristics of both the junction and bulk properties of solar cells fabricated over the spectrum of implant parameters are discussed. Optimized implant parameters and annealing conditions were found which allow for the fabrication of 14-15-percent (AM1) efficient solar cells.

Douglas, E. C.↗
NASA NTRS1986

Four-micron period ion-implanted bubble test circuits

Packaged magnetic bubble test circuits made with 4-micron period ion-implanted circuits were operated over -55 to +110 C. The circuits used bidirectional transfer and nondestructive detection and were made on bismuth-containing magnetic garnet films. Passivated circuits that incorporated an improved transfer conductor design were operated on films with higher Gilbert damping parameters. Potential advantages to using films with lower bubble aspect ratios for ion-implanted circuits are discussed. However nondestructive read-out detection was not realized with these 'flat' bubbles.

Nelson, T. J.↗
NASA NTRS1991

Ion-implanted extrinsic Ge photodetectors with extended cutoff wavelength

Far-IR Ge detectors fabricated using boron ion implantation are shown to exhibit operating characteristics compatible with requirements for low background applications. Device parameters such as low dark currents, reasonably good sensitivity, and extended wavelength threshold demonstrate that ion-implanted Ge far-IR detectors offer promise for use in astrophysics instrumentation.

Wu, I. C.↗
NASA NTRS1975

Ion implanted photodiode detectors in epitaxial /Ga/x/In/1-x//As

Ion implanted p-n junction photodiodes in epitaxially grown (Ga(x)In(1-x))As material are reported on here. Photoresponse in these diodes was investigated for approximately the entire composition range of x between zero and one. High values for quantum efficiency were obtained for the devices with a high value of x.

Ajmera, P. K.↗
NASA NTRS1977

Applications of ion implantation for high efficiency silicon solar cells

Ion implantation is utilized for the dopant introduction processes necessary to fabricate a silicon solar cell. Implantation provides a versatile powerful tool for development of high efficiency cells. Advantages and problems of implantation and the present status of developmental use of the technique for solar cells are discussed.

Minnucci, J. A.↗
NASA NTRS1980

Automated ion implantation for IC's

Report discusses automated ion-implantation facility under development at Marshall Space Flight Center. Facility will produce ultra-reliable IC's with minimal human intervention.

Kennedy, B. W.↗