Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Ion beams”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

A perpendicular ion beam instability - Solutions to the linear dispersion relation

A 200-eV Xe(+) ion beam directed perpendicular to the terrestrial magnetic field in the F region ionosphere produced very narrow band electrostatic emissions just above multiples of the hydrogen cyclotron frequency. Although the plasma conditions associated with the ion beam were undoubtedly very complex, a simple ion beam in a background ionosphere is considered first. The dispersion relation for flute mode waves and an unmagnetized perpendicular ion beam is solved for a diffuse H(+) plasma and then for a combination of dense O(+) and diffuse H(+). These solutions account for most of the wave properties, including the observation of narrow spectral peaks separated by the hydrogen cyclotron frequency and the observation of no spectral peaks below 2000 Hz. We cannot dismiss field-aligned currents associated with the Xe(+) beam as an alternate source of free energy for the narrow band emissions. However, our intention here is to examine closely the Xe(+) beam as a source for directly exciting the plasma waves.

Kintner, P. M.↗
NASA NTRS1982

Deposition of reactively ion beam sputtered silicon nitride coatings

An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

Grill, A.↗
NASA NTRS1984

Etching of diamond with argon and oxygen ion beams

The angular dependences of the sputter yield of (100) single crystal diamond under argon and oxygen ion beams were investigated. For argon ion beams a large increase in the sputter yield was observed as the angle of incidence was increased from the normal, with a maximum occurring at approximately 60 deg from the normal. The magnitude of the increase and the angle at which the maximum was observed were dependent on the ion energy and species. The shape of the yield versus angle of incidence curve indicated the presence of a highly damaged surface layer. Large deviations from this curve were observed where ion incidence was along channeling directions. Studies with oxygen ion beams showed almost no angular dependence for 500 eV ions while at an energy of 1000 eV the angular dependence was similar to that for argon ions. At normal incidence the yield for 500 eV oxygen ions was seven times larger than that for 500 eV argon ions. For 1000 eV oxygen and argon ions the corresponding ratio is only 2.5. Implications for mechanisms of inert and reactive ion etching are discussed. Application of the data to ion beam shaping of diamond tips for ultrahigh pressure research is discussed.

Whetten, T. J.↗
NASA NTRS1983

Surface modification using MeV ion beams

Electronic excitation induced by MeV/amu ion beams in a variety of materials has been employed successfully for a number of applications. The examples that will be presented are: modification of the surface reflectivities of optical materials; sputter-erosion of dielectrics; and enhancement of the adhesion of thin film coatings. All of these effects arise from the loss of energy by the ion beam to electrons in the target material; the mechanisms involved are at best qualitatively understood. This paper will stress not only the exploitation of such high energy bombardment techniques but will also briefly review attempts to expose the underlying causes.

Tombrello, T. A.↗
NASA NTRS1963

NEUTRALIZATION OF ION BEAMS

Space charge neutralization for ion beam propulsion system based on time-independent solutions of relevant equations that predict large positive space charge

ION BEAM↗
NASA NTRS1984

Ion-beam-textured and coated surfaces experiment (S1003)

The objective of this LDEF experiment is to measure the effects of exposure to the shuttle launch and near Earth space environments on the optical properties of ion beam textured high absorptance solar thermal control surfaces, the optical and electrical properties of ion beam sputtered conductive solar thermal control surfaces, and the weight loss of ion beam deposited oxide polymer films. The various types of surfaces to be tested include six major categories: (1) ion beam textured surfaces suitable for space solar thermal (solar concentration) application; (2) painted and/or state of the art solar thermal surfaces; (3) ion beam sputtered conductive coatings for thermal and space charge control (e.g., indium-oxide coated metalized FEP Teflon); (4) ion beam sputtered conductive coated solar sail materials for space charge control and cooling through emittance; (5) micrometeoroid sensitive samples whose optical properties change only as a result of micrometeoroid impact; and (6) Kapton coated with oxide polymer films to minimize oxygen degradation at near Earth orbit altitudes.

Mirtich, M. J., Jr.↗
NASA NTRS1978

Ion beam divergence characteristics of two-grid accelerator systems

The first comprehensive experimental investigation of two-grid accelerator systems is presented. A wide range of geometrical grid parameters and grid set operating conditions were investigated for their effect on ion beam divergence. Ion beam divergence was found to depend most strongly on normalized perveance per hole, grid separation ratio, net-to-total accelerating voltage ratio, and discharge-to-total accelerating voltage ratio variations. The graphical results contained herein provide guidelines for the design of ion accelerator systems. A general ion beam divergence angle correlation was developed to permit approximate beam divergence estimates, at parametric values other than those tested, of present grid set designs. Although argon was the main test gas used in this study, it is shown that the results are applicable to other propellants as well.

Aston, G.↗
NASA NTRS1980

Energetic ion beam magnetosphere injection and solar power satellite transport

The effects of ion beam injection in the magnetosphere are considered. The beam's parameters are those characteristic of the ion propulsion engines envisioned for use in solar power satellite placement (Hanley and Guttman, 1978). Specifically, from a detailed analysis of the beam's propagation through the magnetosphere it is shown that the bulk of the ion beam is not stopped in the magnetosphere. However, the relatively small fraction of the beam which is deposited via the beam's sheath loss may give rise to a large distortion in the magnetospheric plasma population. Possible loss mechanisms from the magnetosphere for this artificial energetic ion component are evaluated. Electron Coulomb scattering yields the shortest lifetime throughout most of the plasmasphere provided that plasmasphere heating by beam ions is not too intense. Charge exchange dominates beyond the plasmasphere. The effects of pitch angle scattering due to beam ion turbulence may appreciably shorten beam ion lifetimes throughout the magnetosphere

Curtis, S. A.↗
DOE OSTI2025

On the role of self-generated magnetic fields in focused ion beams driven by intense picosecond laser pulses

We investigate the physics of ion beam focusing in the interaction of intense picosecond laser pulses with concave foils, using two-dimensional particle-in-cell simulations. Curved targets have been observed to deliver brighter multi-MeV ion beams than flat targets, and they could be used to ignite pre-compressed ICF fusion capsules in a scheme called ion fast ignition. Focusing is achieved by shaping the target and relying on an ion acceleration mechanism in which the ions are accelerated normal to the target surface; subsequently, the plasma expansion grows magnetic fields that advect with the plasma and deflect ions away from the target symmetry axis, causing the focal spot to shift downstream from its geometric location. The drop in both electric and magnetic field strengths in the expanding plasma makes the ion beam envelope asymmetric with respect to the focusing plane.

Focused ion beam↗
NASA NTRS1978

Ion beam sputter etching and deposition of fluoropolymers

Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

Banks, B. A.↗
NASA NTRS1978

Ion beam sputter etching and deposition of fluoropolymers

Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanisms and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

Banks, B. A.↗
NASA NTRS1983

Nitriding of titanium and titanium: 8 percent aluminum, 1 percent molybdenum, 1 percent vanadium alloy with an ion-beam source

Titanium and Ti-8Al-1Mo-1V alloy were nitrided with an ion-beam source of nitrogen or argon and nitrogen at a total pressure of 2 x 10 to the minus 4th power to 10 x 10 to the minus 4th power torr. The treated surface was characterized by surface profilometry, X-ray diffractometry, Auger electron spectroscopy and microhardness measurements. The tetragonal Ti2N phase formed in pure titanium and Ti-8Al-1Mo-1V alloy with traces of AlN in the alloy. Two opposite processes competed during the ion-beam-nitriding process: (1) formation of nitrides in the surface layer and (2) sputtering of the nitrided layers by the ion beam. The highest surface hardnesses, about 500 kg/sq mm in titanium and 800 kg/sq mm in Ti-8Al-1Mo-1V, were obtained by ion nitriding with an ion beam of pure nitrogen at 4.2 x 10 to the minus 4th power torr at a beam voltage of 1000 V.

Gill, A.↗
NASA NTRS1980

Broad beam ion source operation with four common gases

A Kaufman-type broad beam ion source, used for sputtering and etching purposes, has been operated with Ar, Kr, O2 and N2 gas inputs over a wide range of beam energies (200-1200 eV) and gas flow rates (1-10 sccm). The maximum ion beam current density for each gas saturates at about 2.5 mA/sq cm as gas flow is increased. The discharge threshold voltage necessary to produce a beam and the beam efficiency (beam current/molecular current), however, varied considerably. Kr had the lowest threshold and highest efficiency, Ar next, then N2 and O2. The ion beam current varied only weakly with beam energy for low gas flow rates, but showed a factor of two increase when the gas flow was higher.

Pak, S.↗
DOE OSTI2026

Low-energy ion beam sputtering of polycrystalline diamond

Ion beam milling is a highly versatile and precise technique for the microfabrication of diamond films, enabling controlled material removal at both micrometer and sub-micrometer scales while accommodating complex geometries and surface features. Comprehensive sputtering yield data are essential for process optimization. In this work, we systematically measure the sputter yield of polycrystalline diamond bombarded with $\textrm{N}_2^+$, Ne + , Ar + , Kr + , and Xe + ions over an energy range of 300–900 eV and beam incidence angles of 0°−80°, providing data critical for precision machining applications. Results show that the sputter yield increases with both ion energy and the incidence angle and decreases with increasing ion mass. For $\textrm{N}_2^+$ ions, the sputter yield is largely insensitive to ion energy and exceeds values expected for pure physical sputtering. The concurrent formation of volatile C 2 N 2 molecules during $\textrm{N}_2^+$ ion bombardment suggests that the process is dominated by chemical sputtering. The absence of a peak in the dependence of the sputter yield on the beam incidence angle expected at oblique incidence angles is attributed to the effects of surface roughness.

Materials science↗
NASA NTRS1977

Ion-beam sputtering increases solar-cell efficiency

Ion-beam sputtering, fabrication of oxide-semiconductor-on-silicon (OSOS) solar cells, results in cells of 12% efficiency. Ion-beam sputtering technique is compatible with low-cost continuous fabrication and requires no high-temperature processing.

Burk, D. E.↗