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49 records · Page 3

Intrinsic even-odd thickness-driven anomalous Hall effect in epitaxial MnBi2⁢Te4 thin films

We demonstrate precise control of magnetism in MnBi2⁢Te4 thin films through careful synthesis by molecular beam epitaxy, achieving minimal defects and accurate layer thickness control. By optimizing Mn-Bi-Te ratios and growth temperatures, we minimize detrimental self-doping effects and accurately target integer-layer films. X-ray diffraction and reflectivity provide quantitative measures of film quality and thickness. When these macroscale probes of structure and thickness are integrated with magnetotransport measurements, a striking even-odd layer dependence of the anomalous Hall effect is revealed. Odd-layer films exhibit a large hysteresis up to the Néel temperature (∼25K), consistent with noncompensated antiferromagnetism, while even-layer films show minimal response, as expected for an antiferromagnet. The sign of the anomalous Hall effect exhibits a sign reversal for intrinsic magnetism versus magnetism associated with defects. This work identifies critical factors for inducing pure, noncompensated ferromagnetism and reveals the characteristics of the intrinsic anomalous Hall effect in MnBi2⁢Te4, which together is a step toward realizing the zero-field quantum anomalous Hall effect in topological materials.

Mallick, Deb [ORNL] (ORCID:000900005806411X)↗

Torus geometry eigenfunctions of an interacting multi-Landau-level Hamiltonian

A short-ranged, rotationally symmetric multi-Landau-level model Hamiltonian for strongly interacting electrons in a magnetic field was proposed [A. Anand et al., Phys. Rev. Lett. 126, 136601 (2021)] with the key feature that it allows exact many-body eigenfunctions on the disk not just for quasiholes but for all charged and neutral excitations of the entire Jain sequence filling fractions. We extend this to geometries without full rotational symmetry, namely, the torus and cylinder geometries, and present their spectra. Exact diagonalization of the interaction on the torus produces the low-energy spectra at filling fraction v = n/(2⁢pn + 1) that is identical, up to a topological (2⁢pn + 1)-fold multiplicity, to that of the integer quantum Hall spectra at v = n, for the incompressible state as well as all excitations. While the ansatz eigenfunctions in the disk geometry cannot be generalized to closed geometries such as torus or sphere, we show how to extend them to cylinder geometry. Meanwhile, we show eigenfunctions for charged excitations at filling fractions between 1/3 and 2/5 can be written on the torus and the spherical geometries.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Green’s functions on a renormalized lattice: An improved method for the integer quantum Hall transition

Highlights: • Speed up of numerical calculations by exact renormalization group steps. • Practical approach to handle delicate scaling analysis. • Absence of evidence to prefer marginal corrections over power-law corrections. We introduce a performance-optimized method to simulate localization problems on bipartite tight-binding lattices. It combines an exact renormalization group step to reduce the sparseness of the original problem with the recursive Green’s function method. We apply this framework to investigate the critical behavior of the integer quantum Hall transition of a tight-binding Hamiltonian defined on a simple square lattice. In addition, we employ an improved scaling analysis that includes two irrelevant exponents to characterize the shift of the critical energy as well as the corrections to the dimensionless Lyapunov exponent. We compare our findings with the results of a conventional implementation of the recursive Green’s function method, and we put them into broader perspective in view of recent development in this field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Microwave and rf Spectroscopy of 2D Carrier Systems and Bilayers (Final Technical Report)

We performed microwave spectroscopic studies of two dimensional electron systems (2DES) exhibiting the quantum Hall effect (QHE) in GaAs/Al${_x}$Ga$_{1-x}$As heterostructures. A common theme of the proposed work is electron solids, of which the simplest is the Wigner crystal, a triangular lattice of individual carriers. The solids are stabilized by carrier-carrier interaction and occur under conditions when the kinetic energy of the system is "frozen out" by high magnetic field, $B$. One of the main reasons for microwave spectroscopic study of 2DES is that the solid phases have striking microwave or rf spectra. In the low wave vector ($q$) limit these spectra exhibit a resonance that is understood as a pinning mode, a small collective oscillation of pieces of the solid within the disorder potential. Pinning modes can be very sharp, with quality factors up to around 30, and are valuable as signatures of the electron solids, and can reveal a solid even when standard dc transport shows an insulator, an integer QHE, or even a fractional QHE The pinning mode also is sensitive to the solid properties, and can reveal transitions between solids.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Stacking disorder and thermal transport properties of α-RuCl 3

α-RuCl 3 , a well-known candidate material for Kitaev quantum spin liquid, is prone to stacking disorder due to the weak van der Waals bonding between the honeycomb layers. After a decade of intensive experimental and theoretical studies, the detailed correlation between stacking degree of freedom, structure transition, magnetic, and thermal transport properties remains unresolved. In this work, we reveal the effects of a small amount of stacking disorder inherent even in high quality α-RuCl 3 crystals. This small amount of stacking disorder results in the variation of the magnetic ordering temperature, and it suppresses the structure transition and thermal conductivity. Crystals with a minimal amount of stacking disorder have a T N > 7.4 K and exhibit a well-defined structure transition around 140 K upon cooling. For those with more stacking faults and a T N below 7 K, the structure transition occurs well below 140 K upon cooling and is incomplete, manifested by the diffuse streaks and the coexistence of both high-temperature and low-temperature phases down to the lowest measurement temperature. Both types of crystals exhibit oscillatory field-dependent thermal conductivity and a plateaulike feature in thermal Hall resistivity in the field-induced quantum spin liquid state. However, α-RuCl 3 crystals with a minimal amount of stacking disorder have a higher thermal conductivity that pushes the thermal Hall conductivity to be closer to the half-integer quantized value. Importantly, these findings demonstrate a strong correlation between layer stacking, structure transition, magnetic, and thermal transport properties, underscoring the importance of interlayer coupling in α-RuCl3 despite the weak van der Waals bonding.

36 MATERIALS SCIENCE↗

Generalized multifractality at spin quantum Hall transition

Generalized multifractality characterizes scaling of eigenstate observables at Anderson-localization critical points. We explore generalized multifractality in 2D systems, with the main focus on the spin quantum Hall (SQH) transition in superconductors of symmetry class C. Relations and differences with the conventional integer quantum Hall (IQH) transition are also studied. Using the field-theoretical formalism of non-linear sigma-model, we derive the pure-scaling operators representing generalizing multifractality and then “translate” them to the language of eigenstate observables. Performing numerical simulations on network models for SQH and IQH transitions, we confirm the analytical predictions for scaling observables and determine the corresponding exponents. Remarkably, the generalized-multifractality exponents at the SQH critical point strongly violate the generalized parabolicity of the spectrum, which implies violation of the local conformal invariance at this critical point.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Competing Zero-Field Chern Insulators in Superconducting Twisted Bilayer Graphene

The discovery of magic angle twisted bilayer graphene has unveiled a rich variety of superconducting, magnetic, and topologically nontrivial phases. Here, we show that the zero-field states at odd integer filling factors in h-BN nonaligned devices are consistent with symmetry broken Chern insulators, as is evidenced by the observation of the anomalous Hall effect near moiré cell filling factor ν = +1. The corresponding Chern insulator has a Chern number C = ±1 and a relatively high Curie temperature of T c ≈ 4.5 K. In a perpendicular magnetic field above B > 0.5 T we observe a transition of the ν = +1 Chern insulator from Chern number C = ±1 to C = 3, characterized by a quantized Hall plateau with R yx = h/3e 2 . These observations demonstrate that interaction-induced symmetry breaking leads to zero-field ground states that include almost degenerate and closely competing Chern insulators, and that states with larger Chern numbers couple most strongly to the B field. In addition, the device reveals strong superconducting phases with critical temperatures of up to T c ≈ 3.5 K. By providing the first demonstration of a system that allows gate-induced transitions between magnetic and superconducting phases, our observations mark a major milestone in the creation of a new generation of quantum electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

In this work, we report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing top and bottom gates, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor v T =1 and v T =2 are observed in both density regimes, and the evolution of their excitation gaps is reported as a function of the density. The v T =1 gap evolution departs from the behavior generally observed for valley splitting in the single layer regime. Furthermore, by comparing the v T =2 gap to the single particle tunneling energy, Δ SAS , obtained from Schrödinger–Poisson (SP) simulations, evidence for the onset of spontaneous interlayer coherence is observed for a relative filling fraction imbalance smaller than ~50%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Microwave Imaging of Edge Conductivity in Graphene at Charge Neutrality and Quantum Hall States

Here, we report local conductivity imaging of edge states in monolayer graphene by millikelvin microwave impedance microscopy. At the charge-neutrality point, as the magnetic field increases, the local conductivity at the edge drops to zero more slowly than in the bulk. This behavior is consistent with the calculated spatial profile of the charge gap in the canted antiferromagnetic phase. For comparison, we also perform microwave imaging of integer quantum Hall states away from neutrality, which host dissipationless chiral edge channels. The evolution of the edge signal as a function of the bulk gap is fundamentally different between the Landau level filling factor 𝜈 = 0 and |𝜈| ≥ 1 integer quantum Hall states, which can be qualitatively explained by numerical simulations and theoretical analysis. Our results provide a comprehensive microscopic picture of the edge and bulk states as the Fermi level moves across the unique Landau-level spectrum of graphene.

Hall effect↗

Partial equilibration of anti-Pfaffian edge modes at ν = 5 / 2

The thermal Hall conductance K of the fractional quantum Hall state at filling fraction ν = 5/2 has recently been measured to be K = 2.5π 2 $k$$^{2}_{B}$T/3h [M. Banerjee et al. Nature (London) 559, 205 (2018)]. Here, the half-integer value of this result (in units of π 2 $k$$^{2}_{B}$T/3h) provides strong evidence for the presence of a Majorana edge mode and a corresponding quantum Hall state hosting quasiparticles with non-Abelian statistics. Whether this measurement points to the realization of the PH-Pfaffian or the anti-Pfaffian state has been the subject of debate. Here we consider the implications of this measurement for anti-Pfaffian edge-state transport. We show that in the limit of strong Coulomb interaction and an approximate spin degeneracy in the lowest Landau level, the anti-Pfaffian state admits low-temperature edge phases that are consistent with the Hall conductance measurements. Furthermore, these edge phases can exhibit fully equilibrated electrical transport coexisting with partially equilibrated heat transport over a range of temperatures. Through a study of the kinetic equations describing low-temperature electrical and heat transport of these edge states, we determine regimes of parameter space, controlling the interactions between the different edge modes that agree with experiment.

36 MATERIALS SCIENCE↗

Phase diagram of superconductivity in the integer quantum Hall regime

An interplay between pairing and topological orders has been predicted to give rise to superconducting states supporting exotic emergent particles, such as Majorana particles obeying non-Abelian braid statistics. We consider a system of spin polarized electrons on a Hofstadter lattice with nearest-neighbor attractive interaction and solve the mean-field Bogoliubov–de Gennes equations in a self-consistent fashion, leading to gauge-invariant observables and a rich phase diagram as a function of the chemical potential, the magnetic field, and the interaction. As the strength of the attractive interaction is increased, the system first makes a transition from a quantum Hall phase to a skyrmion lattice phase that is fully gapped in the bulk but has topological chiral edge current, characterizing a topologically nontrivial state. This is followed by a vortex phase in which the vortices carrying Majorana modes form a lattice; the spectrum contains a low-energy Majorana band arising from the coupling between neighboring vortex-core Majorana modes but does not have chiral edge currents. For some parameters, a dimer vortex lattice occurs with no Majorana band. The experimental feasibility and the observable consequences of skyrmions as well as Majorana modes are indicated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Higher Vortexability: Zero-Field Realization of Higher Landau Levels

The rise of moiré materials has led to experimental realizations of integer and FCIs in small or vanishing magnetic fields. At the same time, a set of minimal conditions sufficient to guarantee an Abelian fractional state in a flat band were identified, namely “ideal" or “vortexable" quantum geometry. Such vortexable bands share essential features with the LLL, while excluding the need for more fine-tuned aspects such as flat Berry curvature. A natural and important generalization is to ask if such conditions can be extended to capture the quantum geometry of higher Landau levels, particularly the first (1LL), where non-Abelian states at ν = 1/2, 2/5 are known to be competitive. The possibility of realizing these states at zero magnetic field, and perhaps even more exotic ones, could become a reality if we could identify the essential structure of the 1LL in Chern bands. In this work, we introduce a precise definition of 1LL quantum geometry, along with a figure of merit that measures how closely a given band approaches the 1LL. Furthermore, periodically strained Bernal graphene is shown to realize such a 1LL structure even in zero magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States

Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moiré superlattices (MSLs) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography-defined semiconductor MSLs, in which three fundamental parameters electron−electron interaction, spin−orbit coupling, and band topology are designable. We experimentally investigate quantum-transport properties in a moiré specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum-information and microelectronics technologies.

36 MATERIALS SCIENCE↗