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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Proximity effect between superconductivity and normal metals

The SNS junctions were limited to having gold (n) layers of less than 3000 A in order to avoid having the tin (S) films become normal under the influence of the signal current in the gold. The gold layer was alloyed with 10 wt% copper to shorten its electronic mean free path, increasing the tin layer critical current while decreasing the Josephson critical current. It was also found that a previously reported anomalous voltage shift in the presence of I2 is caused by the tin being driven normal. After deposition, the samples were transferred to a conventional cryostat to provide better thermal contact to the films. This reduction of heating in the films produced more linear I-V characteristics and a change in the constant voltage current gain. In order to achieve power gain the SNS device must be operated at lower temperatures were the effects of fluctuations are less and be constructed such that the input resistance is much reduced and the dynamic output resistance increased. A geometry is proposed using a more sophisticated evaporator.

Meissner, H.↗
NASA NTRS1972

A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide

In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.

Lin, A. H.↗
NASA NTRS1973

Effects of proton irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

The 1 ohm-cm and 10 ohm-cm silicon solar cells were exposed to 1.0 MeV protons at a fixed flux of 10 to the 9th power P/sq cm-sec and fluences of 10 to the 10th power, 10 to the 11th power, 10 to the 12th power and 3 X 10 to the 12th power P/sq cm. I-V curves of the cells were made at room temperature, 65 C and 165 C after each irradiation. A value of 139.5 mw/sq cm was taken as AMO incident energy rate per unit area. Degradation occurred for both uncovered 1 ohm-cm and 10 ohm-cm cells. Efficiencies are generally higher than those of comparable U.S. cells tested earlier. Damage (loss in maximum power efficiency) with proton fluence is somewhat higher for 10 ohm-cm cells, measured at the three temperatures, for fluences above 2 X 10 to the 11th power P/sq cm. Cell efficiency, as expected, changes drastically with temperature.

Nicoletta, C. A.↗
NASA NTRS1973

Solar array synthesis computer program

Photovoltaic characteristics have been measured on solar cells irradiated by 1 MeV electrons to fluences ranging from 1 x 10 to the 13th power e/sq cm to 1 x 10 to the 16th power e/sq cm, for cell temperatures ranging from 123 K to 473 K and for illumination intensities ranging from 5m W/sq cm to 1830m W/sq cm. Empirical equations have been derived from these measurements to describe the behavior of light generated current, open circuit voltage and I-V curve shape over various portions of these temperature/illumination ranges. Both 10 ohms/cm and 17 ohms/cm n-p silicon solar cells were tested, and similar analytical expressions were formulated for easy comparison between the two resistivities.

Faith, T. J.↗
NASA NTRS1973

Design of nonlinear resistive networks with prescribed input-output behavior.

This paper considers the problem of designing nonlinear multiport resistive networks for prescribed driving point and transfer characteristics. It is shown that, if the topology of the desired network is given, then the i-v characteristics of the nonlinear elements can be obtained iteratively. This is achieved by implementation of a newly developed steepest descent criterion.

Peikari, B.↗
NASA NTRS1974

Methods of improving the efficiency of photovoltaic cells

Work on aluminum-alloyed silicon grating cells is continued. Optimization of the geometry (grating line width and spacing) confirms the analysis of such cells. A 1 sq cm grating cell was fabricated and its i-V characteristic was measured under an AMO solar simulator. It is found that the efficiency of this cell would be about 7.9%, if it were covered by the usual antireflection coating. The surface of the cell is not covered by a diffused junction. The response is blue shifted; the current is somewhat higher than that produced by a commercial Si cell. However, the open circuit voltage is low, and attempts to optimize the open circuit voltage of the aluminum-alloy junctions are described. A preliminary X-ray topographic examination of GaAs specimens of the type commonly used to make solar cells is studied. The X-ray study shows that the wafers are filled with regions having strain gradients, possibly caused by precipitates. It is possible that a correlation exists between the presence of low mechanical perfection and minority carrier diffusion lengths of GaAs crystals.

Loferski, J. J.↗
NASA NTRS1975

Direct solar energy conversion for large scale terrestrial use

Various techniques to increase the open circuit voltage are being explored. It had been previously observed that cells made on CdS deposited from a single source gave a consistently higher V sub oc. Further tests have now shown that this effect may in fact relate to differences in source and substrate temperatures. The resulting differences in CdS structure and crystallinity are being documented. Deposits of mixed CdS and ZnS are being produced and will be initially made into cells using the conventional barriering technique. Analysis of I-V characteristics at temperatures between 25 and 110 C is being perfected to provide nondestructive analysis of the Cu2S. Changes due to vacuum heat treatments and exposure to oxygen are also being monitored by the same technique. Detailed spectral response measurements are being made.

Boeer, K. W.↗
NASA NTRS1975

Current from a dilute plasma measured through holes in insulators

The current collected from a plasma through holes in insulated electrodes was measured. Holes of 0.051- and 2.54-cm diameters in Kapton H film and plasma number densities of 100 and 10,000 electrons/cu cm were used. The current collected by bare electrodes, that is, electrodes with no surrounding insulation, is also presented. For all the samples the current at a given voltage was a function of the surrounding insulator area rather than of the hole size or the underlying electrode size. In addition, at the low plasma density the I-V characteristic showed very steep rises for voltages below 1 kV. In one case the current jumped by a factor of approximately 70 to 200 V. Results are given for positive biases to 10 kV. For negative biases, sparking prevented testing most samples to the 10-kV limit.

Grier, N. T.↗
NASA NTRS1975

Solar cells for terrestrial applications

The power efficiency curves of photovoltaic solar cells were investigated as a function of the forbidden energy gap (E sub g) and the current-voltage characteristic of the diode. Minority carrier injection, depletion layer recombination, and interface recombination terms were considered in models for the I-V characteristic. The collection efficiency for photons with energy between (E sub g) and an upper energy cutoff (E sub w) was assumed to be 100% and zero otherwise. Results are presented in terms of a single parameter related to the ratio of depletion layer width and minority carrier diffusion length. It was found that increasing depletion layer recombination shifts the efficiency curves to larger values of the energy without changing the shape of the efficiency curve appreciably. It is believed that similar results would be obtained whenever the quality factors in the exponential energy gap and forward bias terms are equal.

Chernow, F.↗
NASA NTRS1988

Performance of GaAs concentrator cells under electron irradiations from 0.4 to 2.3 MeV

Gallium arsenide concentrator cells were irradiated with electrons with energies varying from 0.4 to 2.3 MeV, and their electrical performance was measured. The cells are 5 x 5 mm square with a 4-mm diameter illuminated area. At each of four different electron energy levels (0.4, 0.7, 1.0, and 2.3 MeV), three n/p and two p/n cells were irradiated. I-V performance measurements were made prior to irradiation and at several intermediate fluence levels. The final fluence level was 3 X 10 to the 15th e/sq cm. It is concluded that the power degradation is independent of the temperature at which it is measured.

Curtis, Henry B.↗