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Results for “High-voltage performance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

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NASA NTRS1971

Multi-phase, 2-kilowatt, high-voltage, regulated power supply.

Development of a flight configured experimental power supply delivering 2 kw of conditioned power represents a concentrated effort at advancing the state-of-the-art in high voltage power supplies for space application. The power supply described herein was designed for use with the Jet Propulsion Laboratory (JPL) 20 cm Mercury Ion Thruster. However, its modularized design philosophy allows adaptation to various high voltage, high power requirements. Areas of principal concern are design of power and control circuits, performance parameters, packaging, efficiency, and weight.

Garth, D. R.↗

NASA NTRS1972

Electric power processing, distribution and control for advanced aerospace vehicles.

The results of a current study program to develop a rational basis for selection of power processing, distribution, and control configurations for future aerospace vehicles including the Space Station, Space Shuttle, and high-performance aircraft are presented. Within the constraints imposed by the characteristics of power generation subsystems and the load utilization equipment requirements, the power processing, distribution and control subsystem can be optimized by selection of the proper distribution voltage, frequency, and overload/fault protection method. It is shown that, for large space vehicles which rely on static energy conversion to provide electric power, high-voltage dc distribution (above 100 V dc) is preferable to conventional 28 V dc and 115 V ac distribution per MIL-STD-704A. High-voltage dc also has advantages over conventional constant frequency ac systems in many aircraft applications due to the elimination of speed control, wave shaping, and synchronization equipment.

Krausz, A.↗

NASA NTRS1976

Solid state remote power controllers for 120 VDC power systems

Remote Power controllers (RPCs) are devices that combine in one unit the capability to perform all the needed functions of load switching and provide total system protection of equipment and wires. The unique developments of solid-state RPCs for 120 Vdc power distribution systems are reviewed. The discussion covers design guidelines, power switch design concepts, and performance effectiveness. An NPN transistor is used as the the basic switch element. Since the ultimate goal of the 120 Vdc RPC program is to demonstrate technology readiness, the final phase is directed to the design, fabrication, and testing of multi-chip hybrid prototypes in hermetically sealed packages. RPCs have potential application in spacecraft and aircraft electrical systems, in transportation systems, and various industrial applications. The upper voltage limitation on the RPC design is related to the capability and availability of suitable high-voltage power transistors. The merits of solid-state RPCs are noted.

Sundberg, G. R.↗

NASA NTRS1979

Radiation damage in high-voltage silicon solar cells

Three types of open circuit high voltage solar cells were tested to determine their performance after exposure to 1 MeV electron irradiations. The cells with a relatively deep n-type emitter were more susceptible to radiation damage than other high open circuit high voltage cells. The use of diffused or ion implanted junctions leads to open circuit high voltage cell designs that are less susceptible to radiation damage. These latter two types of cells show degradations that are typical of the 0.1 ohm-cm material from which they are fabricated. Furthermore, exposure to ionizing radiation causes oxide degradation and decreased cell performance in cells that depend on a charged oxide to achieve significant cell properties. Hence, the combination of a charged oxide and a relatively deep n-type emitter is not recommended for incorporation into a cell designed for use in the particulate radiation environment of space.

Weinberg, I.↗

NASA NTRS1979

Primary Electric Propulsion Technology Study

An investigation of the 30-cm engineering-model-thruster technology with emphasis placed on the development of models for understanding and predicting the operational characteristics and wear-out mechanisms of the thruster as a function of operating or design parameters is presented. The task studies include: (1) the wear mechanisms and wear rates that determine the useful lifetime of the thruster discharge chamber; (2) cathode lifetime as determined by the depletion of barium from the barium-aluminate-impregnated-porous-tungsten insert that serves as a barium reservoir; (3) accelerator-grid-system technology; (4) a verification of the high-voltage propellant-flow-electrical-isolator design developed under NASA contract NAS3-20395 for operation at 10-kV applied voltage and 10-A equivalent propellant flow with mercury and argon propellants. A model was formulated for predicting performance.

Poeschel, R. L.↗

NASA NTRS1980

Planar multijunction high voltage solar cells

Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Evans, J. C., Jr.↗

NASA NTRS1980

The planar multijunction cell - A new solar cell for earth and space

A new family of high-voltage solar cells, called the planar multijunction (PMJ) cell is being developed. The new cells combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell area. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Evans, J. C., Jr.↗

NASA NTRS1981

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

Berning, D.↗

NASA NTRS1980

High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

Nussberger, A. A.↗

NASA NTRS1982

Component technology for space power systems

Progress made by NASA toward implementation of equipment for the conversion, management, and distribution of voltage power in space applications are reviewed. Work has been carried forward on components such as bipolar transistors, deep impurity semiconductors, conductors, dielectrics, magnetic devices, and rotary power transfer. Specific programs for the high voltage systems have included research on lightweight, low-cost conductors featuring graphite fibers containing electron donor materials for wires and cables with reduced mass and the conductivity of copper. Attention has also been given p-n junction technology for high-speed, high-current, high-voltage materials and diamond-like dielectric films which are hard, have high dielectric strength, and can operate up to 300 C. A transistor has been fabricated with a voltage of 1200 V at 100 A, with a gain of 10 and a 0.5 microsec rise/fall time. A 25 kW transformer has also been built which performs at 20 kHz with an efficiency of 99.2%.

Finke, R. C.↗

NASA NTRS1985

Characterization of EMI generated by the discharge of a VOLT solar array

The interaction of a high-voltage solar array with the space plasma environment is investigated in a laboratory simulation experiment. Discharges are observed to occur when the solar array is at a sufficiently high negative bias with respect to the plasma. The frequency of occurrence of discharge is found to depend critically on the plasma density and on the geometry of the array. The electromagnetic interference (EMI) associated with a discharge is also measured. The amplitude of EMI increases with the magnitude of the high voltage. Since the discharge-generated EMI is of significant amplitude, its effect on the performance of systems in space must be evaluated.

Leung, P.↗

NASA NTRS1987

Plasma electron collection through biased slits in a dielectric

A large number of experimental and analytical efforts have been directed toward understanding the plasma sheath growth and discharge phenomena which lead to high-voltage solar array/space plasma interactions. An important question which has not been addressed is how the voltage gradient in the plasma sheath near the surface of such an array may affect these interactions. The purpose of the experimental study described in this paper is to examine the merging of the sheaths around biased slits in a dielectric and how this affects the collection of electrons through these slits. The data, which are obtained by emissive probes and direct measurement of the current collected through the slits, indicate that when the sheaths merge the current collection by the slits is significantly altered with the most positive slit collecting more electrons than it otherwise would. Therefore, the effect of a voltage gradient in the sheath around a solar array should be considered when evaluating solar array performance.

Carruth, M. R., Jr.↗

NASA NTRS1987

Evaluation of high-voltage, high-power, solid-state remote power controllers for amps

The Electrical Power Branch at Marshall Space Flight Center has a Power System Development Facility where various power circuit breadboards are tested and evaluated. This project relates to the evaluation of a particular remote power controller (RPC) energizing high power loads. The Facility equipment permits the thorough testing and evaluation of high-voltage, high-power solid-state remote power controllers. The purpose is to evaluate a Type E, 30 Ampere, 200 V dc remote power controller. Three phases of the RPC evaluation are presented. The RPC is evaluated within a low-voltage, low-power circuit to check its operational capability. The RPC is then evaluated while performing switch/circuit breaker functions within a 200 V dc, 30 Ampere power circuit. The final effort of the project relates to the recommended procedures for installing these RPC's into the existing Autonomously Managed Power System (AMPS) breadboard/test facility at MSFC.

Callis, Charles P.↗

NASA NTRS1990

Improved high-voltage, high-frequency square-wave generator

This paper describes the design and operation of a prototype high-voltage full-floating high-frequency square-wave generator which is an improved version of the generator developed by Bernius and Chutjian (1989). The present design overcomes possible momentary simultaneous ON states in the MOSFET configuration and is less susceptible to deleterious effects caused by the component aging and replacements with nonidentical parts. The circuit performs well over a wide voltage and frequency range, until a limit is imposed by the operating characteristics of the active MOSFET elements. Circuit diagrams are presented.

Bernius, Mark T.↗

NASA NTRS1990

High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs

A GaAs material grown by molecular beam epitaxy at a low substrate temperature was used to fabricate a photoconductor switch that produces 6-V picosecond electrical pulses. The pulses were produced on a microwave coplanar-strip transmission line lithographically patterned on the low-temperature (LT) GaAs. A 150-fs laser pulse was used to generate carriers in the LT GaAs gap between the metal strips, partially shorting a high DC voltage placed across the lines. The 6-V magnitude of the electrical pulses obtained is believed to be limited by the laser pulse power and not by the properties of the LT GaAs. Experiments were also performed on a picosecond photoconductor switch fabricated on a conventional ion-damaged silicon-on-sapphire substrate. Although comparable pulse durations were obtained, the highest pulse voltage achieved with the latter device was 0.6 V.

Frankel, Michael Y.↗

NASA NTRS1992

Dielectric breakdown studies of Teflon perfluoroalkoxy at high temperature

Teflon perfluoroalkoxy (PFA) was evaluated for use as a dielectric material in high-temperature high-voltage capacitors for space applications. The properties that were characterized included the dc dielectric strength at temperatures up to 250 C and the permittivity and dielectric loss as a function of frequency, temperature and voltage. To understand the breakdown mechanism taking place at high temperatures, the pre-breakdown discharge and conduction currents, and the dependence of dielectric strength on thickness of the film were determined. Confocal laser microscopy was performed to diagnose for microimperfections within the film structure. The results obtained show a significant decrease in the dielectric strength and an increase in dielectric loss with an increase in temperature, suggesting that impulse thermal breakdown could be a responsible mechanism in PFA film at temperatures above 150 C.

Suthar, J. L.↗

NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

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NASA NTRS2002

13-kV Ion-Extraction System Being Developed for Inert Gas Ion Engines

A high-voltage ion optics design was chosen for an assumed outer planet or interstellar precursor mission that would require a long-life, high-power, high-specific-impulse krypton ion engine. Such an engine could support energetic space missions to the outer planets or beyond. Detailed performance and lifetime analyses and several inexpensive subscale grid tests were conducted at the NASA Glenn Research Center and at the Colorado State University under a NASA Glenn grant. A subscale grid set of the selected geometry shown was tested at voltages up to 13,000 V. This yielded a krypton ion beam current that would, when scaled to a full-size 50-cm diameter, produce an ion beam with a power of 30 kW at a specific impulse over 14,000 sec. The operational ion beam focusing limits, as a function of ion current per hole, were found to impose requirements of high uniformity on the discharge chamber plasma density. A full-size set of two-grid, 50-cm-diameter titanium ion optics has been fabricated and awaits testing.

Rawlin, Vincent K.↗