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At least 55 records · Page 3

Design of an 8-channel 40 GS/s 20 mW/Ch waveform sampling ASIC in 65 nm CMOS

One picosecond timing resolution is the entry point to signature based searches relying on secondary/tertiary vertices and particle identification. We describe PSEC5, an 8-channel 40 GS/s waveform-sampling ASIC in TSMC 65 nm process targetting one picosecond resolution at 20 mW power per channel. Each channel consists of four fast and one slow switched capacitor arrays (SCA), allowing for picosecond time resolution combined with a long effective buffer. Each fast SCA is 1.6 ns long and has a nominal sampling rate of 40 GS/s. The slow SCA is 204.8 ns long and samples at 5 GS/s. Recording of the analog data for each channel is triggered by a fast discriminator capable of multiple triggering during the window of the slow SCA. To achieve a large dynamic range, low leakage, and high bandwidth, the SCA sampling switches are implemented as 2.5 V nMOSFETs controlled by 1.2 V shift registers. Stored analog data are digitized by an external ADC at 10 bits or better. Specifications on operational parameters include a 4 GHz analog bandwidth and a dead time of 20 microseconds, corresponding to a 50 kHz readout rate, determined by the choice of the external ADC. PSEC5 has been submitted for fabrication.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

A 24-channel ultra-low-noise preamplifier for dN/dx measurements with drift tube detectors

Cluster counting $(dN/dx)$ is a promising method to enhance particle identification for gaseous detectors, especially in next-generation collider experiments like the FCC-ee, where good $π/K$ separation over a broad momentum range is essential. However, its implementation in large-scale systems has been limited by the challenging requirements for high-resolution signal amplification and readout. This paper presents a 24-channel ultra-low-noise preamplifier board designed for drift tube detectors to enable $dN/dx$ measurements. The three-stage amplification topology employs SiGe transistors and integrates dedicated noise-minimization techniques, achieving a charge gain of 21.11 mV/fC from 0.3 fC to 50 fC, a bandwidth of 542 MHz, and a voltage gain of 47.8 dB. The measured voltage noise density is 0.35 nV/$\sqrt{\textrm{Hz}}$ , surpassing most of the state-of-the-art preamplifiers for gaseous and silicon detectors. Validation tests conducted on the sMDT chambers at the CERN Proton Synchrotron test beam facility demonstrate that the proposed design meets the stringent preamplifier requirements for implementing the $dN/dx$ method in drift-tube detector systems, achieving an equivalent noise charge of 0.14 fC and a signal-to-noise ratio of 73 when operated with a He:iC 4 H 10 (90:10) gas mixture. The design also shows promise for broader application in other gaseous or semiconductor detectors.

Drift tube detector↗

An 82 to 84 percent efficient, small size, 2 and 4 stage depressed collector for octave bandwidth high performance TWT's

Improvements were carried out on a TWT (traveling wave tube) for use in EMC (electronic countermeasure) systems by applying MDC (multi-stage depressed collector) and spent-beam refocusing techniques. The MDC geometric design consists of six collecting elements (electrodes) at ground and cathode potentials operating in 2 or 4 stage configuration. The refocusing system designed allows a controlled beam expansion to the point that space charge becomes negligible at the MDC entrance. Simultaneously, the standard deviation of the radial velocity (angular spread) is reduced. This system provides an analog real time readout of P(recovered). Data on all tests is obtained with an automated data acquisition system.

Kosmahl, H.↗

Multiplexed Readout for an Experiment with a Large Number of Channels Using Single-Electron Sensitivity Skipper-CCDs

This paper presents the implementation of a multiplexed analog readout electronics system that can achieve single-electron counting using Skipper-CCDs with non-destructive readout. The proposed system allows the best performance of the sensors to be maintained, with sub-electron noise-level operation, while maintaining low-bandwidth data transfer, a minimum number of analog-to-digital converters (ADC) and low disk storage requirement with zero added multiplexing time, even for the simultaneous operation of thousands of channels. These features are possible with a combination of analog charge pile-up, sample and hold circuits and analog multiplexing. The implementation also aims to use the minimum number of components in circuits to keep compatibility with high-channel-density experiments using Skipper-CCDs for low-threshold particle detection applications. Performance details and experimental results using a sensor with 16 output stages are presented along with a review of the circuit design considerations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Noise limits for dc SQUID readout of high- Q resonators below 300 MHz

We present the limits on noise for the readout of cryogenic high-Q resonators using dc Superconducting Quantum Interference Devices (SQUIDs) below 300 MHz. This analysis uses realized first-stage SQUIDs (previously published), whose performance is well described by Tesche–Clarke (TC) theory, coupled directly to the resonators. We also present data from a prototype second-stage dc SQUID array designed to couple to this first-stage SQUID as a follow-on amplifier with high system bandwidth. This analysis is the first full consideration of dc SQUID noise performance referred to a high-Q resonator over this frequency range and is presented relative to the standard quantum limit. We include imprecision, backaction, and backaction–imprecision noise correlations from TC theory, the noise contributed by the second-stage SQUIDs, wiring, and preamplifiers, and optimizations for both on-resonance measurements and off-resonance scan sensitivity. This architecture has modern relevance due to the increased interest in axion searches and the requirements of the DMRadio-m 3 axion search, which uses dc SQUIDs in this frequency range.

Bosons↗

A Low Cost SIPM Evaluation and Control Prototyping System including accurate bias voltage generation, leakage current measurement, and temperature control using Peltier cooling

We describe an electronics system to operate SIPMs in the laboratory. The system is comprised of a single channel amplifier board (SIPM Amp) and a 4-channel control board to which up to 4 SIPM Amp boards can be connected. The control board supplies a common low voltage power for the amplifiers. All channels feature individually regulated bias and Peltier power voltages, along withPt10K RTD readout. A graphical user interface allows control of the bias voltages, amplifier voltage, Peltier voltages, and also provides for readback of leakage currents and other voltages. The GUI app has a feedback loop to measure the SIPM temperature (with the PT10K) and generate correction voltages to the Peltier to regulate the temperature. The temperatures, which can be achieved by Peltier cooling depend on the thermal design of the setup, the practical limit being about 50C below ambient. The SIPM Amp. board is a small (3x5cm) PCB that has a single SIPM readout channel. The SIPM scan be surface mounted on the pcb or connected to a 2-pin 0.100" socket. The area around the SIPM footprint is thermally isolated by perforations in the PCB. The RTD is located inside the thermal break. Onboard is BV and LV filtering. The 10X amplifier is based on MiniCircuits' GALI-S66+ integrated circuit, tweaked for a 6V power. The amplifier was selected for a combination of high bandwidth, low noise, and low power. An accoupled amplifier output is connected to an SMA connector. For best operation of this inverting amplifier the output signal should be in the range of 0 to -1V.The Amplifier board is connected to the Control board with a 10-conductor 0.025" pitch ribbon cable, carrying all the services. Peltier power for currents more than 1A should use a separate 2-contact connector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Sensor requirements for Earth and planetary observations

Future generations of Earth and planetary remote sensing instruments will require extensive developments of new long-wave and very long-wave infrared detectors. The upcoming NASA Earth Observing System (EOS) will carry a suite of instruments to monitor a wide range of atmospheric and surface parameters with an unprecedented degree of accuracy for a period of 10 to 15 years. These instruments will observe Earth over a wide spectral range extending from the visible to nearly 17 micrometers with a moderate to high spectral and spacial resolution. In addition to expected improvements in communication bandwidth and both ground and on-board computing power, these new sensor systems will need large two-dimensional detector arrays. Such arrays exist for visible wavelengths and, to a lesser extent, for short wavelength infrared systems. The most dramatic need is for new Long Wavelength Infrared (LWIR) and Very Long Wavelength Infrared (VLWIR) detector technologies that are compatible with area array readout devices and can operate in the temperature range supported by long life, low power refrigerators. A scientific need for radiometric and calibration accuracies approaching 1 percent translates into a requirement for detectors with excellent linearity, stability and insensitivity to operating conditions and space radiation. Current examples of the kind of scientific missions these new thermal IR detectors would enhance in the future include instruments for Earth science such as Orbital Volcanological Observations (OVO), Atmospheric Infrared Sounder (AIRS), Moderate Resolution Imaging Spectrometer (MODIS), and Spectroscopy in the Atmosphere using Far Infrared Emission (SAFIRE). Planetary exploration missions such as Cassini also provide examples of instrument concepts that could be enhanced by new IR detector technologies.

Chahine, Moustafa T.↗

Initial astronomical results with a new 5-14 micron Si:Ga 58x62 DRO array camera

A new array camera system was developed using a 58 x 62 pixel Si:Ga (gallium doped silicon) DRO (direct readout) photoconductor array detector manufactured by Hughes/Santa Barbara Research Center (SBRC). The camera system is a broad band photometer designed for 5 to 14 micron imaging with large ground-based optical telescopes. In a typical application a 10 micron photon flux of about 10(exp 9) photons sec(exp -1) m(exp -2) microns(exp -1) arcsec(exp -2) is incident in the telescope focal plane, while the detector well capacity of these arrays is 10(exp 5) to 10 (exp 6) electrons. However, when the real efficiencies and operating conditions are accounted for, the 2-channel 3596 pixel array operates with about 1/2 full wells at 10 micron and 10% bandwidth with high duty cycle and no real experimental compromises.

Gezari, Dan↗

Star sensor/mapper with a self deployable, high-attenuation light shade for SAS-B

A star sensor/mapper to determine positional data for the small astronomy satellites was tested to detect stars of plus 4 visual magnitude. It utilizes two information channels with memory so that it can be used with a low-data-rate telemetry system. One channel yields star amplitude information; the other yields the time of star occurrence as the star passes across an N-slit reticle/photomultiplier detector system. Some of the features of the star sensor/mapper are its low weight of 6.5 pounds, low power consumption of 0.4 watt, bandwidth switching to match the satellite spin rate, optical equalization of sensitivity over the 5-by-10 deg field of view, and self-deployable sunshade. The attitude determination accuracy is 3 arc minutes. This is determined by such parameters as the reticle configuration, optical train, and telemetry readout. The optical and electronic design of the star sensor/mapper, its expansion capabilities, and its features are discussed.

Schenkel, F. W.↗

Microwave Kinetic Inductance Detector with Selective Polarization Coupling

A conventional low-noise detector requires a technique to both absorb incident power and convert it to an electrical signal at cryogenic temperatures. This innovation combines low-noise detector and readout functionality into one device while maintaining high absorption, controlled polarization sensitivity, and broadband detection capability. The resulting far-infrared detectors can be read out with a simple approach, which is compact and minimizes thermal loading. The proposed microwave kinetic inductance detector (MKID) consists of three basic elements. The first is the absorptive section in which the incident power is coupled to a superconducting resonator at far-infrared frequency above its superconducting critical frequency (where superconductor becomes normal conductor). This absorber's shape effectively absorbs signals in the desired polarization state and is resonant at the radio frequency (RF) used for readout of the device. Control over the metal film used in the absorber allows realization of structures with either a 50% broadband or 100% resonance absorptance over a 30% fractional bandwidth. The second element is a microwave resonator - which is realized from the thin metal films used to make the absorber as transmission lines - whose resonance frequency changes due to a variation in its kinetic inductance. The resonator's kinetic inductance is a function of the power absorbed by the device. A low-loss dielectric (mono-crystalline silicon) is used in a parallel-plate transmission line structure to realize the desired superconducting resonators. There is negligible coupling among the adjacent elements used to define the polarization sensitivity of each detector. The final component of the device is a microwave transmission line, which is coupled to the resonator, and allows detection of changes in resonance frequency for each detector in the focal plane array. The spiral shape of the detector's absorber allows incident power with two polarizations to couple to the detector equally. A stepped impedance resonator was used that allows the incident power absorbed in the detecting membrane area to be uniformly distributed in the detector's transmission line at the RF readout frequency. This maximizes the sensitivity of the detector. The signal is read out via a frequency multiplexing technique that requires a minimum number of interface transmission lines for readout. This reduces the packaging complexity and coupling to the device's thermal environment.

Wollack, Edward↗

A Highly Sensitive Multi-Element HgCdTe E-APD Detector for IPDA Lidar Applications

An HgCdTe electron avalanche photodiode (e-APD) detector has been developed for lidar receivers, one application of which is integrated path differential absorption lidar measurements of such atmospheric trace gases as CO2 and CH4. The HgCdTe APD has a wide, visible to mid-wave-infrared, spectral response, high dynamic range, substantially improved sensitivity, and an expected improvement in operational lifetime. A demonstration sensor-chip assembly consisting of a 4.3 lm cutoff HgCdTe 4 9 4 APD detector array with 80 micrometer pitch pixels and a custom complementary metal-oxide-semiconductor readout integrated circuit was developed. For one typical array the APD gain was 654 at 12 V with corresponding gain normalized dark currents ranging from 1.2 fA to 3.2 fA. The 4 9 4 detector system was characterized at 77 K with a 1.55 micrometer wavelength, 1 microsecond wide, laser pulse. The measured unit gain detector photon conversion efficiency was 91.1%. At 11 V bias the mean measured APD gain at 77 K was 307.8 with sigma/mean uniformity of 1.23%. The average, noise-bandwidth normalized, system noise-equivalent power (NEP) was 1.04 fW/Hz(exp 1/2) with a sigma/mean of 3.8%. The measured, electronics-limited, bandwidth of 6.8 MHz was more than adequate for 1 microsecond pulse detection. The system had an NEP (3 MHz) of 0.4 fW/Hz(exp 1/2) at 12 V APD bias and a linear dynamic range close to 1000. A gain-independent quantum-limited SNR of 80% of full theoretical was indicative of a gain-independent excess noise factor very close to 1.0 and the expected APD mode quantum efficiency.

NEP↗

Combining quantum noise reduction resources: A practical approach

Optomechanical sensors are capable of transducing external perturbations to resolvable optical signals. A particular regime of interest is that of high-bandwidth force detection, where an impulse is delivered to the system over a short period of time. Exceedingly sensitive impulse detection has been proposed to observe very weak signals like those due to long-range interactions with dark matter that require much higher sensitivities than current sensors can provide. Quantum resources to go beyond the traditional standard quantum limit of these sensors include squeezing of the light used to transduce the signal, backaction evasion by measuring the optimal quadrature, and quantum nondemolition (QND) measurements that reduce backaction directly. These methods have been developed in the context of gravitational wave detection for target frequencies in the audio band range. Here, we provide the theoretical limits to quantum noise reduction for higher and broader frequency targets, such as those from dark matter signals, while combining quantum-enhanced readout techniques based on squeezed light and QND measurements with optomechanical sensors. Here, we demonstrate that backaction evasion through QND techniques dramatically reduces the technical challenges presented when using squeezed light for broadband force detection, paving the way for combining multiple quantum noise reduction techniques for enhanced sensitivity in the context of impulse metrology.

Optomechanics↗

Investigation of Microwave Transducers for Linearity Dependence and Applications in Quantum Networking

Quantum devices have the potential to revolutionize applications in computing, communications, and sensing; however, current state-of-art resources must operate at extremely low temperatures, making the routing of microwave control and readout signals challenging to scale. Interest in microwave photonic solutions to this problem has grown in recent years, in which control signals are delivered to the cold stage via optical fiber, where they are converted to electrical signals through photodetection. Overall link performance depends strongly on the characteristics of the photodiode, yet detailed measurements of many detector properties remain lacking at cold temperatures. In this work, we examine and compare the performance of a modified uni-traveling carrier photodiode (MUTC-PD) at both room (300 K) and liquid nitrogen (80 K) temperatures, focusing in particular on responsivity, bandwidth, and linearity. In line with previous work, we find a sharp reduction in responsivity at 1550 nm as temperature decreases, while RF bandwidth remains steady. Interestingly, our linearity tests reveal that the RF output saturates more quickly at 80 K, suggesting reduced linearity with lower temperature, the cause of which is still under investigation. Our results should help contribute to the understanding and future design of highly linear cryogenic quantum links.

Bolton, Summer↗

Multiabsorber Transition-Edge Sensors for X-Ray Astronomy

We are developing arrays of position-sensitive microcalorimeters for future x-ray astronomy applications. These position-sensitive devices commonly referred to as hydras consist of multiple x-ray absorbers, each with a different thermal coupling to a single-transition-edge sensor microcalorimeter. Their development is motivated by a desire to achieve very large pixel arrays with some modest compromise in performance. We report on the design, optimization, and first results from devices with small pitch pixels (<75 μm) being developed for a high-angular and energy resolution imaging spectrometer for Lynx. The Lynx x-ray space telescope is a flagship mission concept under study for the National Academy of Science 2020 decadal survey. Broadband full-width-half-maximum (FWHM) resolution measurements on a 9-pixel hydra have demonstrated ΔE(FWHM) = 2.23 ± 0.14 eV at Al-Kα, ΔE(FWHM) = 2.44 ± 0.29 eV at Mn-Kα, and ΔE(FWHM) = 3.39 ± 0.23 eV at Cu-Kα. Position discrimination is demonstrated to energies below <1 keV and the device performance is well-described by a finite-element model. Results from a prototype 20-pixel hydra with absorbers on a 50-μm pitch have shown ΔE(FWHM) = 3.38 ± 0.20 eV at Cr-Kα1. We are now optimizing designs specifically for Lynx and extending the number of absorbers up to 25/hydra. Numerical simulation suggests optimized designs could achieve ∼3 eV while being compatible with the bandwidth requirements of the state-of-the art multiplexed readout schemes, thus making a 100,000 pixel microcalorimeter instrument a realistic goal.

Smith, Stephen J.↗

Nanoscale Compositional and Strain Gradients Enable High‐Speed and Amplitude‐Resolved Pyroelectric Sensing

The frequency response of pyroelectric sensors is fundamentally governed by thermal time constant (τth, determined by thermal mass and thermal conductance) and electrical impedance arising from film capacitance and readout circuit. Conventional bulk LiTaO3 detectors are optimized for high responsivity at low modulation frequencies (0.1-10 Hz), possessing a large τth that thermally averages rapid temperature oscillations at elevated modulation frequencies, limiting fidelity in resolving dynamic varying thermal signals. Here, compositional and strain gradients are introduced into 100-nm-thick relaxor-ferroelectric films reducing τth to ≈2 µs and producing built-in potentials (≈1.45 V or 145 kV cm-1) that enhance the pyroelectric coefficient and suppress the dielectric constant. This enables complementary dual-mode operation by enhancing current-mode electrical responsivity and improving the voltage-mode figure of merit - advantageous for superior temperature resolution (ΔTmin ≈ 30 µK). The responsivity peak shifts to near 1 kHz (>2500-times higher than conventional bulk sensors), with measurable responsivity extending to a carrier frequency of 100 kHz and amplitude-resolved detection at modulation frequencies up to 15 kHz. These results establish nanoscale internal-field engineering can reshape electro-thermal trade-off in pyroelectric thin films toward zero-bias, high-thermal-sensitivity, and amplitude-resolved thermal sensing across a wide frequency bandwidth.

Lin, Ching‐Che↗

Design and Fabrication of Quantum Information Processing Devices (Final Report)

The goal of this work is to develop a wideband Josephson Parametric Amplifier (JPA) by the combination of a coplanar impedance transformer and a lumped Josephson Parametric Amplifier. Josephson Parametric Amplifiers take advantage of the nonlinear inductance of Josephson junctions and the nearly lossless superconductor circuits to achieve wave mixing and amplification with only quantum-limited added noise, which makes it a key component in quantum measurements, such as single-shot qubit measurement. However, the current JPAs generally have a relatively high quality factor and small bandwidth (around 50MHz to 100MHz), which limits their ability in measuring signals from a broad spectrum. Therefore, the work planned to use a coplanar impedance transformer to enhance the coupling between JPA and the signals, resulting in a small quality factor and large bandwidth. By decreasing the quality factor of JPA to around 3, one can achieve around 20dB gain within a bandwidth of several hundred MHz. Moreover, the wideband feature allows this device to explore the frequency dependence of the coupling between the JPA and the signals. Because the impedance transformer is based on a coplanar transmission line and requires no modifications of the lumped JPA, it is relatively straightforward to embed it in the current fabrication, package, and testing process for lumped JPA. The impedance transformer can be fabricated by liftoff or etching process with the lumped JPA together, which adds no fabrication complexity. The only difference is the size, which is around 3~5 times larger than lumped JPA. This may make the number of available chips on a single wafer lower. As for the public benefits, the development of this wideband JPA will make it possible to use just a single JPA device for multi-frequency signals, for example, the readout signals of a superconducting qubit chip with multiplexed readout bus. This would greatly decrease the demand for JPAs in quantum measurements.

42 ENGINEERING↗

Downsampling Photodetector Array with Windowing

In a photon counting detector array, each pixel in the array produces an electrical pulse when an incident photon on that pixel is detected. Detection and demodulation of an optical communication signal that modulated the intensity of the optical signal requires counting the number of photon arrivals over a given interval. As the size of photon counting photodetector arrays increases, parallel processing of all the pixels exceeds the resources available in current application-specific integrated circuit (ASIC) and gate array (GA) technology; the desire for a high fill factor in avalanche photodiode (APD) detector arrays also precludes this. Through the use of downsampling and windowing portions of the detector array, the processing is distributed between the ASIC and GA. This allows demodulation of the optical communication signal incident on a large photon counting detector array, as well as providing architecture amenable to algorithmic changes. The detector array readout ASIC functions as a parallel-to-serial converter, serializing the photodetector array output for subsequent processing. Additional downsampling functionality for each pixel is added to this ASIC. Due to the large number of pixels in the array, the readout time of the entire photodetector is greater than the time between photon arrivals; therefore, a downsampling pre-processing step is done in order to increase the time allowed for the readout to occur. Each pixel drives a small counter that is incremented at every detected photon arrival or, equivalently, the charge in a storage capacitor is incremented. At the end of a user-configurable counting period (calculated independently from the ASIC), the counters are sampled and cleared. This downsampled photon count information is then sent one counter word at a time to the GA. For a large array, processing even the downsampled pixel counts exceeds the capabilities of the GA. Windowing of the array, whereby several subsets of pixels are designated for processing, is used to further reduce the computational requirements. The grouping of the designated pixel frame as the photon count information is sent one word at a time to the GA, the aggregation of the pixels in a window can be achieved by selecting only the designated pixel counts from the serial stream of photon counts, thereby obviating the need to store the entire frame of pixel count in the gate array. The pixel count se quence from each window can then be processed, forming lower-rate pixel statistics for each window. By having this processing occur in the GA rather than in the ASIC, future changes to the processing algorithm can be readily implemented. The high-bandwidth requirements of a photon counting array combined with the properties of the optical modulation being detected by the array present a unique problem that has not been addressed by current CCD or CMOS sensor array solutions.

Patawaran, Ferze D.↗

High-Density, High-Bandwidth, Multilevel Holographic Memory

A proposed holographic memory system would be capable of storing data at unprecedentedly high density, and its data transfer performance in both reading and writing would be characterized by exceptionally high bandwidth. The capabilities of the proposed system would greatly exceed even those of a state-of-the art memory system, based on binary holograms (in which each pixel value represents 0 or 1), that can hold .1 terabyte of data and can support a reading or writing rate as high as 1 Gb/s. The storage capacity of the state-of-theart system cannot be increased without also increasing the volume and mass of the system. However, in principle, the storage capacity could be increased greatly, without significantly increasing the volume and mass, if multilevel holograms were used instead of binary holograms. For example, a 3-bit (8-level) hologram could store 8 terabytes, or an 8-bit (256-level) hologram could store 256 terabytes, in a system having little or no more size and mass than does the state-of-the-art 1-terabyte binary holographic memory. The proposed system would utilize multilevel holograms. The system would include lasers, imaging lenses and other beam-forming optics, a block photorefractive crystal wherein the holograms would be formed, and two multilevel spatial light modulators in the form of commercially available deformable-mirror-device spatial light modulators (DMDSLMs) made for use in high speed input conversion of data up to 12 bits. For readout, the system would also include two arrays of complementary metal oxide/semiconductor (CMOS) photodetectors matching the spatial light modulators. The system would further include a reference-beam sterring device (equivalent of a scanning mirror), containing no sliding parts, that could be either a liquid-crystal phased-array device or a microscopic mirror actuated by a high-speed microelectromechanical system. Time-multiplexing and the multilevel nature of the DMDSLM would be exploited to enable writing and reading of multilevel holograms. The DMDSLM would also enable transfer of data at a rate of 7.6 Gb/s or perhaps somewhat higher.

Chao, Tien-Hsin↗