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At least 55 records · Page 3

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NASA NTRS1981

Additional extensions to the NASCAP computer code, volume 1

Extensions and revisions to a computer code that comprehensively analyzes problems of spacecraft charging (NASCAP) are documented. Using a fully three dimensional approach, it can accurately predict spacecraft potentials under a variety of conditions. Among the extensions are a multiple electron/ion gun test tank capability, and the ability to model anisotropic and time dependent space environments. Also documented are a greatly extended MATCHG program and the preliminary version of NASCAP/LEO. The interactive MATCHG code was developed into an extremely powerful tool for the study of material-environment interactions. The NASCAP/LEO, a three dimensional code to study current collection under conditions of high voltages and short Debye lengths, was distributed for preliminary testing.

Mandell, M. J.↗

NASA NTRS1991

Free-piston Stirling Engine system considerations for various space power applications

Free-Piston Stirling Engines (FPSE) have the potential to provide high reliability, long life, and efficient operation. Therefore, they are excellent candidates for the dynamic power conversion module of a space-based, power-generating system. FPSE can be coupled with many potential heat sources (radioisotope, solar, or nuclear reactor), various heat input systems (pumped loop, heat pipe), heat rejection (pumped loop or heat pipe), and various power management and distribution systems (ac, dc, high or low voltage, and fixed or variable load). This paper reviews potential space missions that can be met using free-piston Stirling engines and discusses options of various system integration approaches. This paper briefly outlines the program and recent progress.

Dochat, George R.↗

NASA NTRS2011

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Adell, Philippe C.↗

NASA NTRS2021

Screening and Qualification of BME Feedthrough Capacitors for a Space Project

Surface mount technology feedthrough ceramic capacitors are gaining popularity in Hi-Rel systems due to small size and great filtering characteristics. In this work, BME feedthrough capacitors compliant with AEC-Q200 requirements have been evaluated, screened and qualified for a space project. Evaluation included analysis of the effect of post-soldering thermal shocks, temperature dependencies of leakage currents, distribution of breakdown voltages, assessments of high-current capability, and thermal resistance of the parts. The parts have been screened and qualified at conditions close to the military requirements for ceramic capacitors. No failures were detected during screening including burning-in, but two samples failed during monitored 2000 hour life testing at 125C and two times rated voltage. Failure analysis revealed manufacturing defects that required additional analysis of screening and qualification test conditions. Highly accelerated life testing (HALT) has been carried out to assess reliability acceleration factors and the probability of failure at the use conditions. An approach to selection of adequate burning-in and life test conditions is discussed.

Alexander Teverovsky↗

NASA NTRS2021

Screening and Qualification of BME Feedthrough Capacitors for a Space Project

Alexander Teverovsky↗

NASA NTRS2014

The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

reliability↗

NASA NTRS1988

The state-of-the-art of dc power distribution systems/components for space applications

This report is a survey of the state of the art of high voltage dc systems and components. This information can be used for consideration of an alternative secondary distribution (120 Vdc) system for the Space Station. All HVdc components have been prototyped or developed for terrestrial, aircraft, and spacecraft applications, and are applicable for general space application with appropriate modification and qualification. HVdc systems offer a safe, reliable, low mass, high efficiency and low EMI alternative for Space Station secondary distribution.

Krauthamer, S.↗

NASA NTRS2015

In Flight Calibration of the Magnetospheric Multiscale Mission Fast Plasma Investigation

The Fast Plasma Investigation (FPI) on the Magnetospheric Multiscale mission (MMS) combines data from eight spectrometers, each with four deflection states, into a single map of the sky. Any systematic discontinuity, artifact, noise source, etc. present in this map may be incorrectly interpreted as legitimate data and incorrect conclusions reached. For this reason it is desirable to have all spectrometers return the same output for a given input, and for this output to be low in noise sources or other errors. While many missions use statistical analyses of data to calibrate instruments in flight, this process is difficult with FPI for two reasons: 1. Only a small fraction of high resolution data is downloaded to the ground due to bandwidth limitations and 2: The data that is downloaded is, by definition, scientifically interesting and therefore not ideal for calibration. FPI uses a suite of new tools to calibrate in flight. A new method for detection system ground calibration has been developed involving sweeping the detection threshold to fully define the pulse height distribution. This method has now been extended for use in flight as a means to calibrate MCP voltage and threshold (together forming the operating point) of the Dual Electron Spectrometers (DES) and Dual Ion Spectrometers (DIS). A method of comparing higher energy data (which has low fractional voltage error) to lower energy data (which has a higher fractional voltage error) will be used to calibrate the high voltage outputs. Finally, a comparison of pitch angle distributions will be used to find remaining discrepancies among sensors.

Detection-system↗

NASA NTRS2015

In Flight Calibration of the Magnetospheric Multiscale Mission Fast Plasma Investigation

The Fast Plasma Investigation (FPI) on the Magnetospheric Multiscale mission (MMS) combines data from eight spectrometers, each with four deflection states, into a single map of the sky. Any systematic discontinuity, artifact, noise source, etc. present in this map may be incorrectly interpreted as legitimate data and incorrect conclusions reached. For this reason it is desirable to have all spectrometers return the same output for a given input, and for this output to be low in noise sources or other errors. While many missions use statistical analyses of data to calibrate instruments in flight, this process is insufficient with FPI for two reasons: 1. Only a small fraction of high resolution data is downloaded to the ground due to bandwidth limitations and 2: The data that is downloaded is, by definition, scientifically interesting and therefore not ideal for calibration. FPI uses a suite of new tools to calibrate in flight. A new method for detection system ground calibration has been developed involving sweeping the detection threshold to fully define the pulse height distribution. This method has now been extended for use in flight as a means to calibrate MCP voltage and threshold (together forming the operating point) of the Dual Electron Spectrometers (DES) and Dual Ion Spectrometers (DIS). A method of comparing higher energy data (which has low fractional voltage error) to lower energy data (which has a higher fractional voltage error) will be used to calibrate the high voltage outputs. Finally, a comparison of pitch angle distributions will be used to find remaining discrepancies among sensors.

Heliophysics↗

NASA NTRSDate not supplied

Wireless Sensor Instrumentation for Distributed Sensing in Ground-Test Facilities

Wireless sensors have a number of advantages over wired sensors for flexible or temporary diagnostic deployment in a field or lab setting. Relative to wireless alternatives, traditional wired systems encounter limitations including spatial and weight constraints, maintenance costs, and signal integrity in high-noise environments. Ground-test facilities often face these challenges and cause increase down-time costs and failure of data integrity. This paper describes the development and implementation of flexible wireless sensor boards for applications within ground-test facilities using different network architectures. These boards implement state-of-the- art STM32 microprocessor chips for high-speed data acquisition and computational power. Additionally, the design integrates long-range radio transceivers with power output of +20dBm, easily reaching 2 km range, while maintaining high interference immunity and minimizing current consumption. The wireless sensor boards were implemented to demonstrate performance through benchmark testing and by taking distributed electrically-isolated measurements on a high-voltage lab apparatus while using different network architectures. Although this test case is in a laboratory setting, this network architecture could be easily repurposed for various other forms of monitoring.

Wireless Sensor Network↗

NASA NTRS1979

Analysis of S-band solid-state transmitters for the solar power satellite

The possibility of replacing the Reference System antenna in which thermionic devices are used for the dc-to-microwave conversion, with solid-state elements was explored. System, device, and antenna module tradeoff investigations strongly point toward the desirability of changing the transmitter concept to a distributed array of relatively low power elements, deriving their dc power directly from the solar cell array and whose microwave power outputs are combined in space. The approach eliminates the thermal, weight, and dc-voltage distribution problems of a system in which high power tubes are simply replaced with clusters of solid state amplifiers. The proposed approach retains the important advantages of a solid state system: greatly enhanced reliability and graceful degradation of the system.

Belohoubek, E. F.↗

NASA NTRS2015

Non-Contact Thermal Characterization of NASA's HERMeS Hall Thruster

The thermal characterization test of NASA's 12.5-kW Hall Effect Rocket with Magnetic Shielding has been completed. This thruster was developed to support a number of potential Solar Electric Propulsion Technology Demonstration Mission concepts, including the Asteroid Redirect Robotic Mission concept. As a part of the preparation for this characterization test, an infrared-based, non-contact thermal imaging system was developed to measure the temperature of various thruster surfaces that are exposed to high voltage or plasma. An in-situ calibration array was incorporated into the setup to improve the accuracy of the temperature measurement. The key design parameters for the calibration array were determined in a separate pilot test. The raw data from the characterization test was analyzed though further work is needed to obtain accurate anode temperatures. Examination of the front pole and discharge channel temperatures showed that the thruster temperature was driven more by discharge voltage than by discharge power. Operation at lower discharge voltages also yielded more uniform temperature distributions than at higher discharge voltages. When operating at high discharge voltage, increasing the magnetic field strength appeared to have made the thermal loading azimuthally more uniform.

Hall Thrusters↗

NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗

NASA NTRS1992

Extracellular vesicles of calcifying turkey leg tendon characterized by immunocytochemistry and high voltage electron microscopic tomography and 3-D graphic image reconstruction

To gain insight into the structure and possible function of extracellular vesicles in certain calcifying vertebrate tissues, normally mineralizing leg tendons from the domestic turkey, Meleagris gallopavo, have been studied in two separate investigations, one concerning the electron microscopic immunolocalization of the 66 kDa phosphoprotein, osteopontin, and the other detailing the organization and distribution of mineral crystals associated with the vesicles as determined by high voltage microscopic tomography and 3-D graphic image reconstruction. Immunolabeling shows that osteopontin is related to extracellular vesicles of the tendon in the sense that its initial presence appears coincident with the development of mineral associated with the vesicle loci. By high voltage electron microscopy and 3-D imaging techniques, mineral crystals are found to consist of small irregularly shaped particles somewhat randomly oriented throughout individual vesicles sites. Their appearance is different from that found for the mineral observed within calcifying tendon collagen, and their 3-D disposition is not regularly ordered. Possible spatial and temporal relationships of vesicles, osteopontin, mineral, and collagen are being examined further by these approaches.

NASA Discipline Musculoskeletal↗

NASA NTRS2016

Degradation of Leakage Currents and Reliability Prediction for Tantalum Capacitors

Two types of failures in solid tantalum capacitors, catastrophic and parametric, and their mechanisms are described. Analysis of voltage and temperature reliability acceleration factors reported in literature shows a wide spread of results and requires more investigation. In this work, leakage currents in two types of chip tantalum capacitors were monitored during highly accelerated life testing (HALT) at different temperatures and voltages. Distributions of degradation rates were approximated using a general log-linear Weibull model and yielded voltage acceleration constants B = 9.8 +/- 0.5 and 5.5. The activation energies were Ea = 1.65 eV and 1.42 eV. The model allows for conservative estimations of times to failure and was validated by long-term life test data. Parametric degradation and failures are reversible and can be annealed at high temperatures. The process is attributed to migration of charged oxygen vacancies that reduce the barrier height at the MnO2/Ta2O5 interface and increase injection of electrons from the MnO2 cathode. Analysis showed that the activation energy of the vacancies' migration is ~ 1.1 eV.

acceleration factors↗

NASA NTRS2003

Characterization of Downstream Ion Energy Distributions From a High Current Hollow Cathode in a Ring Cusp Discharge Chamber

The presence of energetic ions produced by a hollow cathodes operating at high emission currents (greater than 10 Angstroms) has been documented in the literature. As part of an ongoing effort to uncover the underlying physics of the formation of these ions, ion efflux from a high current hollow cathode operating in an ion thruster discharge chamber was investigated. Using a spherical sector electrostatic energy analyzer located downstream of the discharge cathode, the ion energy distribution over a 0 to 60 eV energy range was measured. The sensitivity of the ion energy distribution function to zenith angle was also assessed at 3 different positions: 0, 15, and 25 degrees. The measurements suggest that the majority of the ion current at the measuring point falls into the analyzer with an energy approximately equal to the discharge voltage. The ion distribution, however, was found to be quite broad. The high energy tail of the distribution function tended to grow with increasing discharge current. Sensitivity of the profiles to flow rate at fixed discharge current was also investigated. A simple model is presented that provides a potential mechanism for the production of ions with energies above the discharge voltage.

Foster, John E.↗

NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗

NASA NTRS1979

Current leakage for low altitude satellites - Modeling applications

To simulate the behavior of a high voltage solar cell array in the ionospheric plasma environment, the large (90 ft x 55 ft diameter) vacuum chamber was used to measure the high-voltage plasma interactions of a 3 ft x 30 ft conductive panel. The chamber was filled with Nitrogen and Argon plasma at electron densities of up to 1,000,000 per cu cm. Measurements of current flow to the plasma were made in three configurations: (a) with one end of the panel grounded, (b) with the whole panel floating while a high bias was applied between the ends of the panel, and (c) with the whole panel at high negative voltage with respect to the chamber walls. The results indicate that a simple model with a constant panel conductivity and plasma resistance can adequately describe the voltage distribution along the panel and the plasma current flow. As expected, when a high potential difference is applied to the panel ends more than 95% of the panel floats negative with respect to the plasma.

Konradi, A.↗