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All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Characterization and novel application of power over fiber for electronics in a harsh environment

Power-over-Fiber (PoF) technology has been used extensively in settings where high voltages require isolation from ground. In a novel application of PoF, power is provided to photon detector modules located on a surface at ∼ 300 kV with respect to ground in the planned DUNE experiment. In cryogenic environments, PoF offers a reliable means of power transmission, leveraging optical fibers to transfer optical power. PoF technology excels in maintaining low noise levels when delivering power to sensitive electronic systems operating in extreme temperatures and high voltage environments. This paper presents the R&D effort of PoF in extreme conditions and underscores its capacity to revolutionize power delivery and management in critical applications, offering a dependable solution with low noise, optimal efficiency (∼ 51%), and superior isolation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy

Presently, thermal neutron detectors fabricated from boron-10 enriched hexagonal boron nitride (h-10BN) ultrawide bandgap semiconductor grown by metal organic chemical vapor deposition (MOCVD) hold the record high detection efficiency among all solid-state detectors at 59%. To overcome the short comings of MOCVD growth, including inherently low growth rate and unavoidable impurities such as carbon in metal organic source, we demonstrate here the growth of natural hexagonal boron nitride (h-BN) semi-bulk wafers using halide vapor phase epitaxy (HVPE), which is an established technique for producing GaN semi-bulk crystals at a high growth rate. Electrical transport characterization results revealed that these HVPE grown materials possess an electrical resistivity of 1 × 1013 Ω cm, and a charge carrier mobility and lifetime product of 2 × 10−4 cm2/V s. Detectors fabricated from a 100 μm thick h-BN wafer have demonstrated a thermal neutron detection efficiency of 20%, corresponding to a charge collection efficiency of ∼60% at an operating voltage of 500 V. This initial demonstration opens the door for mass producing high efficiency h-BN semiconductor neutron detectors at a reduced cost, which could create unprecedented applications in nuclear energy, national security, nuclear waste monitoring and management, the health care industry, and material sciences.

Physics↗
DOE OSTI2024

ML based control systems for nuclear physics experiments

The Experimental Physics Software and Computing Infrastructure (EPSCI) group at Jefferson Lab is leading the use of machine learning (ML) to enhance control systems in nuclear physics experiments. Collaborating closely with domain experts and data scientists, we have developed an ML-based control system that uses a Gaussian process to dynamically adjust the high voltage of the GlueX Central Drift Chamber. This results in stable detector performance by adapting to environmental changes, thereby reducing the offline calibration effort. Furthermore, we are developing ML-driven systems for optimizing the polarization of photon beams and polarized cryotargets. These systems will maintain the optimal microwave frequency in cryogenic targets and make real-time adjustments to diamond radiators for polarized photon sources, tasks traditionally handled by human operators. By automating these functions, we aim to optimize the polarization, reduce downtime, and minimize human error. This talk will highlight the development of reliable ML-based control systems and the policies to ensure they are both effective and trustworthy.

Jeske, Torri↗
DOE OSTI2023

Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes

A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.

Tsai, Hsinhan↗
DOE OSTI2024

Design, characterization and installation of the NEXT-100 cathode and electroluminescence regions

NEXT-100 is currently being constructed at the Laboratorio Subterráneo de Canfranc in the Spanish Pyrenees and will search for neutrinoless double beta decay using a high-pressure gaseous time projection chamber (TPC) with 100 kg of xenon. Charge amplification is carried out via electroluminescence (EL) which is the process of accelerating electrons in a high electric field region causing secondary scintillation of the medium proportional to the initial charge. The NEXT-100 EL and cathode regions are made from tensioned hexagonal meshes of 1 m diameter. This paper describes the design, characterization, and installation of these parts for NEXT-100. Simulations of the electric field are performed to model the drift and amplification of ionization electrons produced in the detector under various EL region alignments and rotations. Measurements of the electrostatic breakdown voltage in air characterize performance under high voltage conditions and identify breakdown points. Furthermore, the electrostatic deflection of the mesh is quantified and fit to a first-principles mechanical model. Measurements were performed with both a standalone test EL region and with the NEXT-100 EL region before its installation in the detector. Finally, we describe the parts as installed in NEXT-100, following their deployment in Summer 2023.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Ultrahigh‐Flux X‐ray Detection by a Solution‐Grown Perovskite CsPbBr 3 Single‐Crystal Semiconductor Detector

Abstract Solution‐processed perovskites are promising for hard X‐ray and gamma‐ray detection, but there are limited reports on their performance under extremely intense X‐rays. Here, a solution‐grown all‐inorganic perovskite CsPbBr 3 single‐crystal semiconductor detector capable of operating at ultrahigh X‐ray flux of 10 10 photons s −1 mm −2 is reported. High‐quality solution‐grown CsPbBr 3 single crystals are fabricated into detectors with a Schottky diode structure of eutectic gallium indium/CsPbBr 3 /Au. A high reverse‐bias voltage of 1000 V (435 V mm − 1 ) can be applied with a small and stable dark current of ≈60–70 nA (≈9–10 nA mm − 2 ), which enables a high sensitivity larger than 10 000 µC Gy air −1 cm − 2 and a simultaneous low detection limit of 22 nGy air s − 1 . The CsPbBr 3 semiconductor detector shows an excellent photocurrent linearity and reproducibility under 58.61 keV synchrotron X‐rays with flux from 10 6 to 10 10 photons s − 1 mm − 2 . Defect characterization by thermally stimulated current spectroscopy shows a similar low defect density of a synchrotron X‐ray and a lab X‐ray irradiated device. Solid‐state nuclear magnetic resonance spectroscopy suggests that the excellent performance of the solution‐grown CsPbBr 3 single crystal may be associated with its good short‐range order, comparable to the spectrometer‐grade melt‐grown CsPbBr 3 .

Pan, Lei↗
DOE OSTI2024

Irradiation Results of Commercial Neutron and Gamma Sensors at the Ohio State University Research Reactor

This report serves to present the evaluation results of commercial radiation detectors (SPNDs) with the potential to accomplish the data objectives—having sufficient gamma and fast neutron sensitivity—at temperatures near 650°C. The detectors chosen for evaluation are gamma ion chambers from Exosens (previously known as Photonis) models CRGA11 and CRGE32 and tantalum-based self-powered neutron detectors (Ta-SPND) from Mirion. The evaluation was performed in a series of heat irradiations from ambient to 850°C in the 9.5-inch dry tube furnace at the Ohio State University Research Reactor (OSURR). Ion chamber counting curves were measured to evaluate sensor operability at temperature. Detector sensitivity to reactor power and temperature were measured and presented in curve fit parameters. The curve fit equations were used to identify the suggested operational temperatures based on reactor power. Overall, it was evaluated that the CRGA11 was not significantly affected by temperatures up to 650°C and is operable—with higher temperature-contributed signals—up to 700°C. The CRGE32 was more affected by the high temperatures compared to the CRGA11. As a result of increasing temperature, the leakage current was a dominating factor. While the detector can operate up to 600°C and 700°C with lowered high voltage, it is not recommended unless a suitably strong gamma flux field is present. Finally, Ta SPND did not demonstrate good performance beyond 350°C due to the presence of an unknown phenomenon at changing temperatures. The study of the phenomenon is an active research topic outside the scope of this project.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2022

Boron Nitride Solid-State Neutron Detectors

The goal of this project is to build upon the work performed under the Texas Tech IDEAS project (DE-AR0000964 monitored by Dr. Isik Kizilyalli) to bring the developed B-10 enriched hexagonal boron nitride (h- 10 BN or 10 BN or BN) semiconductor neutron detector technology to the next level of maturity. In comparison to He-3 ( 3 He) gas detectors, BN neutron detectors possess all the intrinsic advantages of semiconductor devices: light weight, compact size, fast response speed, high spatial resolution, high temperature and low voltage operation capability, ease of mass production via existing semiconductor infrastructures, low cost of operation and maintenance, flexible form factors, and durability. The project will develop a prototype h- 10 BN neutron detector as a potential replacement for the 3 He gas neutron detectors (LND 25185 or equivalent) used in various neutron survey meters currently produced and commercialized by Ludlum Measurements, Inc. (LMI). To increase the overall detection efficiency, it is essential to maximize the collection efficiency of charge carriers (electrons and holes) generated by the nuclear reaction, which demands a further push to achieve 10 BN epilayers with improved material quality. The material growth processes will be guided by characterization of structural, optical, and electrical properties of h-BN. Selective devices will be calibrated at LMI. During ARPA-E supporting period, the key material parameters of h-BN produced by metal organic chemical vapor deposition (MOCVD), including the layer thickness, mobility-lifetime product, surface recombination field and detector size for maintaining a high charge collection efficiency all have been improved by several orders of magnitude. These improvements have enabled the realization of high-performance h 10BN semiconductor thermal neutron detectors. Presently, h- 10 BN thermal neutron detectors developed under ARPA-E’s support hold the record high detection efficiency among all solid-state detectors at 59%. With further development in manufacturing, there is no question that h-BN detectors will replace the traditional He-3 gas detectors in certain application areas by offering obvious advantages of semiconductor technologies over gas detectors and opportunities for users to dedicate the scarce and expensive supply of He-3 gas to other application areas where substitutes of He-3 gas are not possible.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Deep Learning Approach for High-accuracy Electron Counting of Monolithic Active Pixel Sensor-type Direct Electron Detectors at Increased Electron Dose

Abstract Electron counting can be performed algorithmically for monolithic active pixel sensor direct electron detectors to eliminate readout noise and Landau noise arising from the variability in the amount of deposited energy for each electron. Errors in existing counting algorithms include mistakenly counting a multielectron strike as a single electron event, and inaccurately locating the incident position of the electron due to lateral spread of deposited energy and dark noise. Here, we report a supervised deep learning (DL) approach based on Faster region-based convolutional neural network (R-CNN) to recognize single electron events at varying electron doses and voltages. The DL approach shows high accuracy according to the near-ideal modulation transfer function (MTF) and detector quantum efficiency for sparse images. It predicts, on average, 0.47 pixel deviation from the incident positions for 200 kV electrons versus 0.59 pixel using the conventional counting method. The DL approach also shows better robustness against coincidence loss as the electron dose increases, maintaining the MTF at half Nyquist frequency above 0.83 as the electron density increases to 0.06 e−/pixel. Thus, the DL model extends the advantages of counting analysis to higher dose rates than conventional methods.

Materials Science↗
DOE OSTI2022

Characterization of Multianode Photomultiplier Tubes for use in the CLAS12 RICH detector

In this work, we present results of the detailed study of several hundred Hamamatsu H12700 Multianode Photomultiplier Tubes (MaPMTs), characterizing their response to the Cherenkov light photons in the second Ring Imaging Cherenkov detector, a part of the CLAS12 upgrade at Jefferson Lab. The total number of pixels studied was 25536. The single photoelectron spectra were measured for each pixel at different high voltages and light intensities of the laser test setup. Using the same dedicated front-end electronics as in the first RICH detector, the setup allowed us to characterize each pixel’s properties such as gain, quantum efficiency, signal crosstalk between neighboring pixels, and determine the signal threshold values to optimize their efficiency to detect Cherenkov photons. A recently published state-of-the-art mathematical model, describing photon detector response functions measured in low light conditions, was extended to include the description of the crosstalk contributions to the spectra. The database of extracted parameters will be used for the final selection of the MaPMTs, their arrangement in the new RICH detector, and the optimization of the operational settings of the front-end electronics. The results show that the characteristics of the H12700 MaPMTs satisfy our requirements for the position-sensitive single photoelectron detectors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

R$\&$D of Power Over Fiber in harsh environments and its novel application for the DUNE Photon Detection System

The Deep Underground Neutrino Experiment (DUNE) is a next generation long-baseline neutrino experiment that will send an intense beam of neutrinos through two detector complexes: a near detector complex located at Fermilab (Chicago), and a far detector complex located $\sim$ 1.5 km underground at Sanford Underground Research Facility (SURF) in South Dakota. One of the DUNE Far Detector (FD) modules will employ the Vertical Drift (VD) Technology, which will vertically drift the ionized electrons from the cathode plane suspended at the mid-height of the active volume of the cryostat. The Photon Detection System (PDS) will be installed along the cathode and behind the field cage to increase the photon detection coverage. Due to the high voltage ($\sim$300 kV) present at the cathode, conventional copper cables cannot be used to power the photon detectors. Therefore, Power-over-Fiber (PoF) technology will be deployed to power the PDS based on optical power transmission over optical fibers. This poster presents the R$&$D campaign on different PoF components under harsh environments and its novel application in the DUNE PDS.

Martinez caicedo, David Alejandro [South Dakota Sc↗
DOE OSTI2024

Characterization of High-Temperature SiPM Noise

Introduction • Background: Silicon photomultipliers (SiPMs) are compact, low-power, and high-efficiency detectors that are increasingly used in radiation detection applications like medical imaging and nuclear safeguards. The have advantages of PMTs because they are smaller, operate at lower voltages, and offer high photon detection efficiency. • Challenges: SiPMs suffer from increased dark count rate (DCR) and optical crosstalk (OCT), which degrades performance. • Purpose of study: This study compares the Advansid ASD-NUV3S-P-40, Broadcom AFBR-S4K33C0147L, and Onsemi MicroFJ-30035-TSVTR under four different temperatures to compare their performance in harsh environments.

Fritchie, Jacob↗
DOE OSTI2023

Perovskite CsPbBr 3 Single-Crystal Detector Operating at 10 10 Photons s -1 mm -2 for Ultra-High Flux X-ray Detection

Semiconductors for detecting hard radiation are confronted with considerable problems when operating at high photon fluxes. A perovskite CsPbBr 3 single-crystal detector capable of operating at X-ray fluxes of up to 10 10 photons s -1 mm -2 with beam area ≤ 0.25 mm 2 at 58.61 keV for current-mode X-ray detection is reported. The spectrometer-grade melt-grown CsPbBr 3 detectors show a gamma-ray energy resolution of ~7.5% at 122 keV for 57 Co and dark current as low as 4.3 nA (0.5 nA mm -2 ) at a reverse bias voltage of 200 V (118 V mm -1 ). The detector is tested at X-ray energies of 8.2, 10, and 58.61 keV at a synchrotron light source under a reverse bias voltage of up to 1000 V (588 V mm -1 ). Under a sufficiently high bias voltage and within several hundreds of seconds X-ray exposure, good photocurrent linearity (goodness of fit R 2 > 0.99) and reproducibility are obtained up to a flux of ≈10 10 photons s -1 mm -2 at beam area 0.25 mm 2 with Lower Limit of Detection of ≈10 5 photons s -1 mm -2 and Charge Collection Efficiency of ≈100% for 58.61 keV X-rays. Therefore, wide application of CsPbBr 3 detectors in high-flux X-ray detection is anticipated.

36 MATERIALS SCIENCE↗
DOE OSTI2025

FNCL Enhancements Implementation (FY25 Annual Report)

The FNCL investigations team at Lawrence Livermore National Laboratory (LLNL) has completed research and development of hardware, signal processing, and analysis tools to enhance the measurement capabilities of both the current CAEN SyS VeryFuel Fast Neutron Collar (FNCL) instrument and a next-generation FNCL prototype. The team successfully built and commissioned the LLNL Demonstrator System: a fully integrated, three-panel detector system featuring higher segmentation, plastic scintillators (EJ-276D), Silicon Photomultipliers (SiPMs), no high-voltage requirement, a reduced electronic footprint, and the LLNL-developed Gaussian Mixture Model Pulse Shape Discrimination (GMM-PSD) signal processing. An extensive experimental campaign was conducted at LLNL’s Inherently Safe Subcritical Assembly (ISSA) facility using both the baseline FNCL and the LLNL Demonstrator. The campaign results validated system performance, calibration stability, and the effectiveness of advanced signal processing and analysis algorithms in a relevant environment.

and physical protection↗
DOE OSTI2023

The brighter-fatter effect in the JWST MIRI Si:As IBC detectors: I. Observations, impact on science, and modeling

Context.The Mid-Infrared Instrument (MIRI) on board theJames WebbSpace Telescope (JWST) uses three Si:As impurity band conduction (IBC) detector arrays. The output voltage level of each MIRI detector pixel is digitally recorded by sampling up the ramp. For uniform or low-contrast illumination, the pixel ramps become nonlinear in a predictable way, but in areas of high contrast, the nonlinearity curve becomes much more complex. The origin of the effect is poorly understood and currently not calibrated out of the data. Aims.We provide observational evidence of the brighter-fatter effect (BFE) in MIRI conventional and high-contrast coronagraphic imaging, low-resolution spectroscopy, and medium-resolution spectroscopy data, and we investigate the physical mechanism that gives rise to the effect on the MIRI detector pixel raw voltage integration ramps. Methods.We used public data from the JWST/MIRI commissioning and Cycle 1 phase. We also developed a numerical electrostatic model of the MIRI detectors using a modified version of the publicPoisson_CCDcode. Results.We find that the physical mechanism behind the BFE manifesting in MIRI data is fundamentally different to that of charge-coupled devices and photodiode arrays such as the Hawaii-XRG near-infrared detectors used by the NIRISS, NIRCam, and NIRSpec instruments on board JWST. Observationally, the BFE makes the JWST MIRI data yield 10–25% larger point sources and spectral line profiles as a function of the relative level of de-biasing of neighboring detector pixels. This broadening impacts the MIRI absolute flux calibration, time-series observations of faint companions, and point spread function modeling and subtraction. We also find that the intra-pixel 2D profile of the shrinking Si:As IBC detector depletion region directly impacts the accuracy of the pixel ramp nonlinearity calibration model.

Astronomy & Astrophysics↗
DOE OSTI2024

Determining Optimal Running Conditions for TinyTPC Detector

Liquid argon time projection chambers, (LArTPCs), are particle detectors used to collect ionization charge information from particle trajectories, facilitating detailed particle track analysis. They are currently used as particle detectors in major physics projects such as the deep underground neutrino experiment (DUNE), to detect and study the nature of the elusive neutrino particle. TinyTPC is a small scale LArTPC featuring a pixelated readout system (LArPix) that we will use to study liquid argon doping. We expect this doping to enhance the resolution of LAr detectors, especially for low energy particles below 10 MeV which would expand the capabilities of currently running experiments. Housed within a cryostat filled with liquid argon, the TinyTPC will rely on a high and a low voltage system to collect data. In preparation for deployment we found and resolved issues in the HV and LV systems and we determined optimal running conditions in a test vessel. This presentation will go over the detector commissioning process that enabled data taking with the TinyTPC.

Gonzalez, Rebecca↗
DOE OSTI2020

Overview of CMOS Sensors for Future Tracking Detectors

Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity, due to the direct collection of the sensor signal by the readout electronics. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detectors. In this contribution, a general perspective of the state of the art of CMOS detectors for High Energy Physics experiments is given. The main developments carried out with regard to these devices in the framework of the CERN RD50 collaboration are summarized.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Impedance matched superconducting nanowire photodetector for single- and multi-photon detection

Conventional readout of a superconducting nanowire single-photon detector (SNSPD) sets an upper bound on the output voltage to be the product of the bias current and the load impedance, IB×Zload, where Zload is limited to 50Ω in standard RF electronics. This limit is broken/exceeded by interfacing the 50Ω load and the SNSPD using an integrated superconducting transmission line taper. The taper is a transformer that effectively loads the SNSPD with high impedance without latching. The taper increases the amplitude of the detector output while preserving the fast rising edge. Using a taper with a starting width of 500 nm, a 3.6× higher pulse amplitude, 3.7× faster slew rate, and 25.1 ps smaller timing jitter was observed. The taper also makes the detector's output voltage sensitive to the number of photon-induced hotspots and enables photon number resolution.

Zhu, Di↗