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At least 55 records · Page 3

Thermophysical Properties and Structural Transition of Hg(0.8)Cd(0.2)Te Melt

Thermophysical properties, namely, density, viscosity, and electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt were measured as a function of temperature. A pycnometric method was used to measure the melt density in the temperature range of 1072 to 1122 K. The viscosity and electrical conductivity were simultaneously determined using a transient torque method from 1068 to 1132 K. The density result from this study is within 0.3% of the published data. However, the current viscosity result is approximately 30% lower than the existing data. The electrical conductivity of Hg(sub o.8)Cd(sub 0.2)Te melt as a function of temperature, which is not available in the literature, is also determined. The analysis of the temperature dependent electrical conductivity and the relationship between the kinematic viscosity and density indicated that the structure of the melt appeared to be homogeneous when the temperature was above 1090 K. A structural transition occurred in the Hg(sub 0.8)Cd(0.2)Te melt as the temperature was decreased from 1090 K to the liquidus temperature.

Li, C.↗

Trace elements profiles, notably Hg, from a preliminary study of the Apollo 15 deep-drill core.

The possible thermal gradient near the surface during a lunation is considered together with the heat flow from the interior, the physical process of Hg migration, the results from core and trench samples from previous missions, and other temperature sensitive phenomena that may help understand the processes. U, Os, and Ru concentrations in the deep drill core samples are of potential interest and are summarized in a table. The Os tends to parallel the Hg profile with depth.

Jovanovic, S.↗

Increased capabilities of the 30-cm diameter Hg ion thruster

Some space flight missions require advanced ion thrusters which operate at conditions much different than those for which the baseline 30-cm Hg thruster was developed. Results of initial tests of a 30-cm Hg thruster with two and three grid ion accelerating systems, operated at higher values of both thrust and power and over a greater range of specific impulse than the baseline conditions are presented. Thruster lifetime at increased input power was evaluated both by extended tests and real time spectroscopic measurements.

Rawlin, V. K.↗

Defect chemistry and characterization of Hg(1-x)Cd(x)Te

Undoped mercury cadmium telluride crystals were subjected to high temperature equilibration at temperatures ranging from 400 C to 655 C in various Hg atmospheres. Hall effect and mobility measurements were carried out on the crystals quenched to room temperature subsequent to the high temperature equilibration. The variation of the hole concentration in the cooled crystals at 77 K as a function of the partial pressure of Hg at the equlibration temperatures, together with a comparison of the hole mobility in the undoped samples with that in the copper and phosphorous doped samples yielded a defect model for the undoped crystals, according to which, the undoped crystals are essentially intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. Native donor defects appear to be negligible in concentration, implying that the p to n conversion in these alloys is mainly due to residual foreign donor impurities. The thermodynamic constants for the intrinsic excitation process as well as for the incorporation of the doubly ionized native acceptor defects in the undoped crystals were obtained.

Vydyanath, H. R.↗

Application of the regular associated solution model to the Cd-Te and Hg-Te binary systems

The regular associated solution model is used to treat the phase diagrams of the binary II-VI semiconductor alloy systems Hg-Te and Cd-Te. The equations for the species activity coefficients are used without approximations regarding the magnitudes of the various binary interchange energies or the functional dependence on component mol fraction. The values of the four-adjustable parameters required for description of each system are fixed by fitting liquidus data, and the resulting activity coefficients are used to calculate component partial pressures, which are compared with experimental values as an indpendent check of the validity of the model. The results show that the regular associated solution model provides a usefully accurate, but not complete, description for both the Hg-Te and Cd-Te systems. The relationship of this work to previous investigations is discussed.

Kelley, J. D.↗

Density of liquid Hg(1-x)Cd(x)Te

Negative thermal expansion has been established in liquid Hg(1-x)Cd(x)Te for x less than 0.2 employing a pycnometric method. Pure HgTe increases in density from its melting point at 670 C to a maximum value at 750 C, where normal thermal expansion progressively resumes. The dependence of density on temperature for liquid Hg(1-x)Cd(x)Te arises almost exclusively from the HgTe portion of the melt, while CdTe acts as a diluent. The temperature corresponding to the maximum density changes slightly with composition, increasing by about 5 C for x = 0.1.

Chandra, D.↗

Growth and characterization of Hg(1-x)Zn(x)Se

Hg sub 1-xZn sub xSe alloys of composition x=0.10 were grown in a Bridgman-Stockbarger growth furnace at translation rates of 0.3 and 0.1 micron sec. The axial and radial composition profiles were determined using precision density measurements and IR transmission-edge-mapping, respectively. A more radially homogeneous alloy was produced at the slower growth rate, while the faster growth rate produced more axially homogeneous alloys. A determination of the electrical properties of the Hg sub 1-xZn sub xSe samples in the temperature range 300K-20K was also made. Typical carrier concentrations were on the order of magnitude of 10 to the 18th power cu/cm, and remained fairly constant as a function of temperature. A study was also made of the temperature dependence of the resistivity and Hall mobility. The effect of annealing in a selenium vapor on both the IR transmission and the electrical properties was determined. Annealing was effective in reducing the number of native donor defects and at the resulting lower carrier concentrations, charge carrier concentration was shown to be a function of temperature. Annealing caused the mobility to increase, primarily at the lower temperature, and the room temperature resistivity to increase. Annealing was also observed to greatly enhance the % IR transmittance of the samples. This was due primarily to the effect of annealing on decreasing the charge carrier concentration.

Andrews, R. N.↗

The heat of formation of Mercury vacancies in Hg(0.8)Cd(0.2)Te

A modified mass loss measurement technique has been employed for the first time for the direct in situ determination of vacancy concentrations in Hg(0.8)Cd(0.2)Te at elevated temperatures. This technique can also be used to establish the pressure-temperature phase diagram for this type of system. The derived mean value for the heat of formation of mercury vacancies in the above alloy is 0.43 eV. Theoretical considerations concerning the vacancy formation in HgTe and in Hg(0.8)Cd(0.2)Te are in qualitative agreement with the experimental value.

Wiedemeier, H.↗

Growth and characterization of Hg(1-x)Cd(x)Se alloys

A detailed evaluation of the influence of growth conditions on the radial and axial compositional variations in directionally solidified Hg(1-x)Cd(x)Se alloys was performed. The measured axial compositional profiles were fitted to theoretical profiles to determine the effective solute (CdSe) diffusion coefficient (D) for the Hg(1-x)Cd(x)Se system. The value for D was estimated to be 3.0 + or - 0.5 x 10 to the -5th sq cm/s and did not appear to be significantly affected by the rate of crystal growth. The axial crystal uniformity was shown to be highly growth-rate dependent, with the faster growth rates producing crystals of more uniform composition in the axial direction. The magnitude of the radial variations was also shown to be highly growth-rate dependent, with the slower growth rates producing crystals of greater radial uniformity. This translation rate dependence of the radial uniformity is discussed in terms of lateral solute diffusion and convective interfacial fluid flows.

Andrews, R. N.↗

Penning type of ionizing energy transfer collisions in a Hg-Ar discharge detected by the optogalvanic effect

The temporal evolution of the optogalvanic signals has been investigated in detail in a Hg-argon discharge by irradiating it with an excimer pumped dye laser. The signals at 4510.7, 4596 and 4628.4 A exhibited anomalous behavior. Analysis of the data revealed that the excited Ar and Hg atoms respectively in the 1P1 and 3P1 states participated in energy transfer collisions, causing atomic mercury to excite to an ionized energy state, while simultaneously the argon atom relaxes to its ground state.

Reddy, B. R.↗

A high-performance Hg(+) trapped ion frequency standard

A high-performance frequency standard based on (199)Hg(+) ions confined in a hybrid radio frequency (RF)/dc linear ion trap is demonstrated. This trap permits storage of large numbers of ions with reduced susceptibility to the second-order Doppler effect caused by the RF confining fields. A 160-mHz-wide atomic resonance line for the 40.5-GHz clock transition is used to steer the output of a 5-mHz crystal oscillator to obtain a stability of 2 x 10(exp -15) for 24,000-second averaging times. Measurements with a 37-mHz line width for the Hg(+) clock transition demonstrate that the inherent stability for this frequency standard is better than 1 x 10(exp -15) at 10,000-second averaging times.

Prestage, J. D.↗

Ultra-stable Hg(+) trapped ion frequency standard

We report the development of a fieldable frequency standard based on Hg-199(+) ions confined in a hybrid r.f./dc linear ion trap. This trap permits storage of large numbers of ions with reduced susceptibility to the second-order Doppler effect caused by the r.f. confining fields. A 160 mHz wide atomic resonance line for the 40.5 GHz clock transition is used to steer the output of a 5 MHz crystal oscillator to obtain a stability of 2 x 10 exp -15 for 24,000 s averaging times. For longer averaging intervals, measurements are limited by instabilities in available hydrogen maser frequency standards. Measurements with 37 mHz linewidth for the Hg(+) clock transition demonstrate that the inherent stability for this frequency standard is at least as good as 1 x 10 exp -15.

Prestage, J. D.↗

The abundances of Pt, Au, and Hg in the chemically peculiar HgMn-type stars kappa Cancri and chi Lupi

Echelle mode spectra obtained with the Goddard High Resolution Spectrograph (GHRS) onboard the Hubble Space Telescope (HST) have been used to determine the abundances of the heavy elements Pt, Au, and Hg in the chemically peculiar HgMn-type stars kappa Cancri and chi Lupi. The abundances were determined by fitting observed line profiles with synthetically generated spectra and are found to be enhanced relative to solar system values by between three and five orders of magnitude in both stars. The Hg isotope mixture in kappa Cancri is found to resemble the terrestrial mixture while that of chi Lupi is dominated by the heaviest isotope. As determined from multiple ionization states, the abundances place constraints upon theories attempting to explain the large superficial abundances of heavy elements.

Wahlgren, Glenn M.↗

Thermal Diffusivity and Conductivity of Hg(1-x)Zn(x)Te Solids and Melts

The thermal diffusivity of pseudobinary Hg(1-x)Zn(x)Te solids and melts was measured by the laser flash method. The measured diffusivities for the solids of 0.10 less than or equal to x less than or equal to 0.30 are about 60% of that of the HgTe solid. Those for the melts rise rapidly with temperature but less so with increasing x. For x = 0.30, the diffusivity of the melt is about one third of that of the HgTe melt. Using the calculated beat capacity data from the associated solution model and measured density values, the thermal conductivity for the pseudobinary Hg(1-x)Zn(x)Te solids of 0.10 less than or equal to x less than or equal to 0.30 and for the melts of x = O.10, 0.16, and 0.30 was determined.

Sha, Yi-Gao↗

Intrinsic Carrier Concentration and Electron Effective Mass in Hg(1-x) Zn(x) Te

In this work, the intrinsic carrier concentration and electron effective mass in Hg(l-x)Zn(x)Te were numerically calculated. We adopt the procedures similar to those used by Su et. al. for calculating intrinsic carrier concentrations in Hg(1-x)Cd(x)Te which solve the exact dispersion relation in Kane model for the calculation of the conduction band electron concentrations and the corresponding electron effective masses. No approximation beyond those inherent in the k centered dot p model was used here.

Sha, Yi-Gao↗

Microstructural Development of Directionally Solidified Hg(1-x)Zn(x)Se Alloys

Hg(1-x)Zn(x)Se alloys have been studied as an alternative to HgCdTe for the detection of electromagnetic radiation, because the shorter ZnSe and HgSe bonds were predicted to improve lattice stability. Previous studies showed that optical properties were stable with time and that the microhardness was higher than for HgTe based alloys. However, for this material to be commercially viable, compositional variations must be reduced, and the distribution of defects induced by the growth process must be understood. The basic structural properties of bulk materials were characterized, and dislocation etch pit densities were measured to determine whether the addition of Zn to the HgSe lattice reduced the potential for dislocation formation. Hg(0.9)Zn(0.1)Se alloys were directionally solidified using a modified Bridgman-Stockbarger method and in an applied magnetic field. Radial compositional variations were greatly reduced when solidification occurred in an applied magnetic field. The combination of a convex liquid-solid interface shape and a method for reduced wetting produced boules that were a single crystal after reaching full diameter. Observed surface features indicated ampoule wetting could be eliminated using a graphite getter. Microstructural characteristics were greatly improved over HgCdTe alloys, In six boules, a total of only one twin was observed, and no inclusions were found. A method for polishing and producing dislocation etch pits was developed for these alloys, revealing dislocation etch pit densities one to two orders of magnitude less than HgTe based alloys. A kink in the thermal profile during processing of one boule generated more dislocations than did lattice mismatch due to compositional variations. The results of this investigation indicate this alloy has improved microstructural properties and resistance to dislocation formation compared with similar II-VI alloys, and should be further investigated for the detection of electromagnetic radiation.

Cobb, S. D.↗

Determination of the Solid/Liquid Interface Shape and Resultant Radial Homogeneity in Directionally Solidified Hg(0.89)Mn(0.11)Te

Directional solidification and interrupted directional solidification experiments were used to determine tile shape of the solid/liquid interface and the resultant radial homogeneity in Hg(0.89)Mg(0.11)Te. For directionally solidified samples solidified at a rate of 0.09 microns/sec in a thermal gradient of 83 C/cm, a maximum of 0.006 molar percent MnTe radial variation across the Hg0.89)Mn(0.11)Te boules at specific locations was determined using an FTIR technique. This FTIR evaluation of the radial homogeneity also indicated an asymmetrical, convex interface shape during solidification. The asymmetrical, convex shape of the growth interface was confirmed by interrupted directional solidification experiments. These were performed under the same growth conditions as the normally completed directional solidification experiments except that the samples were quenched before the final growth transient was reached. In these experiments, etching and scanning X-ray fluorescence were used to reveal the shape of the solid/liquid interface. Microprobe analysis of composition gradients across the interface was used to confirm the authors' previous work in evaluating the segregation coefficient of Hg(0.89)Mn(0.11)Te alloy. Microprobe analysis of the interface region of the interrupted growth sample revealed a dendritic structure containing secondary and tertiary dendritic arms.

Price, M. W.↗