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We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.
Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.
The importance of Cosmic Rays on the performance of integrated circuits (IC's) in a space environment is evident in the upset rate of the Tracking and Data Relay Satellite (TDRS) launched in Apr. 1983. This satellite experiences a single-event-upset (SEU) per day which must be corrected from the ground. Such experience caused a redesign of the Galileo spacecraft with SEU resistant IC's. The solution to the SEU problem continues to be important as the complexity of spacecraft grows, the feature size of IC's decreases, and as space systems are designed with circuits fabricated at non-radiation hardened foundries. This paper describes an approach for verifying the susceptibility of CMOS latches to heavy-ion induced state changes. The approach utilizes alpha particles to induce the upsets in test circuits. These test circuits are standard cells that have offset voltages which sensitize the circuits to upsets. These results are then used to calculate the upsetability at operating voltages. In this study results are presented for the alpha particle upset of a six-transistor static random access memory (SRAM) cell. Then a methodology is described for the analysis of a standard-cell inverter latch.
Testing high voltage (HV) electronic parts (greater than 300 V) for sudden event effects (SEE) caused by cosmic rays in the space environment, consisting of energetic heavy-ions, and neutron radiation in the upper atmosphere is a crucial step towards using these parts in spacecraft and aircraft. Due to the nature of cosmic radiation and neutrons, electronic parts are tested for SEE without any packaging and/or shielding over the top of the device. In the case of commercial HV parts, the top of the packaging is etched off and then a thin dielectric coating is placed over the part in order to avoid electrical arcing between the device surface and wire bonds and other components. Even though the effects of the thin dielectric layer on SEE testing can be accounted for, the dielectric layer significantly hinders post testing failure analysis. Replicating the test capability of state-of-the-art packaging while eliminating the need for post radiation test processing of the die surface (that obscures failure analysis) is the goal. To that end, a new packaging concept for HV parts has been developed that requires no dielectric coating over the part. Testing of prototype packages used with Schottky diodes (rated at 1200V) has shown no electrical arcing during testing and leakage currents during reverse bias testing are within the manufactures specifications.
This paper addresses the accuracy of radiation-induced upset-rate predictions in space using the results of ground-based measurements together with standard environmental and device models. The study is focused on two part types - 16 Mb NEC DRAM's (UPD4216) and 1 Kb SRAM's (AMD93L422) - both of which are currently in space on board the Microelectronics and Photonics Test Bed (MPTB). To date, ground-based measurements of proton-induced single event upset (SEM cross sections as a function of energy have been obtained and combined with models of the proton environment to predict proton-induced error rates in space. The role played by uncertainties in the environmental models will be determined by comparing the modeled radiation environment with the actual environment measured aboard MPTB. Heavy-ion induced upsets have also been obtained from MPTB and will be compared with the "predicted" error rate following ground testing that will be done in the near future. These results should help identify sources of uncertainty in predictions of SEU rates in space.
Single event rates (SER) can include contributions from low-energy particles such that the linear energy transfer (LET) is not constant. Previous work found that the environmental description that is most relevant to the low-energy contribution to the rate is a "stopping rate per unit volume" even when the physical mechanisms for a single-event effect do not require an ion to stop in some device region. Stopping rate tables are presented for four heavy-ion environments that are commonly used to assess device suitability for space applications. A conservative rate estimate utilizing limited test data is derived, and the example of SEGR rate in a power MOSFET is presented.
A significant number of spacecraft operational anomalies are believed to be associated with cosmic-ray-induced soft errors in the LSI memories. Test programs using a cyclotron to simulate cosmic rays have established conclusively that many common commercial memory types are vulnerable to heavy-ion upset. A description is given of the methodology and the results of a detailed analysis for predicting the bit-error rate in an assumed space environment for CMOS memory devices. Results are presented for three types of commercially available CMOS 1,024-bit RAMs. It was found that the HM6508 is susceptible to single-ion induced latchup from argon and krypton ions. The HS6508 and HS6508RH and the CDP1821 apparently are not susceptible to single-ion induced latchup.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. We also present data on the susceptibility of parts to functional degradation resulting from total ionizing dose at low dose rates (0.003-0.33 Rads(Si)/s). Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog to Digital Converters (ADCs), Digital to Analog Converters (DACs), and DC-DC converters, among others.
Report describes experimental study of use of microelectronic advanced laser scanner (MEALS) to cause single-event upsets (SEUs) in integrated logic circuits. Basic concepts of SEU testing by use of MEALS described in "Laser Scanner Tests for Single-Event Upsets" (NPO-18216), "Single-Event-Upset Laser Scanner With Optical Bias" (NPO-18217), and "More About Laser Scanner Tests for Single-Event Upsets" (NPO-18494). Study part of continuing effort to study SEU effects of ionizing radiation on such circuits and to use MEALS as relatively inexpensive SEU-prescreening laboratory apparatus serving as alternative to heavy-ion acclerator.
We calculate total cross sections for coherent pion production using localized plane-wave approximations for the shell-structure of valence nucleons that are excited to delta particles in the intermediate state in the (12C, 12B) and (12C, 12N) charge-exchange, heavy-ion reactions. We find comparable agreement to projectile downshift data for 12C(12C, 12B)12N. Then we improve the formalism by replacing the localized plane wave bound states with harmonic oscillator states which are imbedded in a multipole expansion approach and calculate pion differential cross sections to test for the sensitivity of the spectra to the single-particle mass parameter.
Report summarizes investigation of single-event upsets (SEU) in bipolar integrated-circuit set of flip-flops (memory cells). Device tested made by advanced digital bipolar silicon process of Honeywell, Inc. Circuit chip contained 4 cells. Construction enabled study of effect of size on SEU behavior. Each cell externally biased so effect of bias current on SEU behavior. Results of study provides important information for optimal design of devices fabricated using buried-layer bipolar process operating in heavy-ion SEU environments. Designers use information to provide required levels of suppression of SEU in specific applications via combinations of size and/or cell-current scaling.
Finite state-machines (FSMs) are used to control operational flow in application specific integrated circuits (ASICs) and field programmable gate array (FPGA) devices. Because of their ease of interpretation, FSMs simplify the design and verification process and consequently are significant components in a synchronous design.
For extended manned space missions, the radiation shielding design requires efficient and accurate cosmic-ray transport codes that can handle the physics processes in detail. The Langley Research Center galactic cosmic-ray transport code (HZETRN) is currently under development for such design use. The cross sections for the production of secondary nucleons in the existing HZETRN code are energy dependent only for nucleon collisions. The approximation of energy-independent, heavy-ion fragmentation cross section is now removed by implementing a mathematically simplified energy-dependent stepping formalism for heavy ions. The cross section at each computational grid is obtained by linear interpolation from a few tabulated data to minimize computing time. Test runs were made for galactic cosmic-ray transport through a liquid hydrogen shield and a water shield at solar minimum. The results show no appreciable change in total fluxes or computing time compared with energy-independent calculations. Differences in high LET (linear energy transfer) spectra are noted, however, because of the large variation in cross sections at the low-energy region. The high LET components are significantly higher in the new code and have important implications on biological risk estimates for heavy-ion exposure.
SEU from heavy-ions is measured for SOI PowerPC microprocessors. Results for 0.13 micron PowerPC with 1.1V core voltages increases over 1.3V versions. This suggests that improvement in SEU for scaled devices may be reversed. In recent years there has been interest in the possible use of unhardened commercial microprocessors in space because of their superior performance compared to hardened processors. However, unhardened devices are susceptible to upset from radiation space. More information is needed on how they respond to radiation before they can be used in space. Only a limited number of advanced microprocessors have been subjected to radiation tests, which are designed with lower clock frequencies and higher internal core voltage voltages than recent devices [1-6]. However the trend for commercial Silicon-on-insulator (SOI) microprocessors is to reduce feature size and internal core voltage and increase the clock frequency. Commercial microprocessors with the PowerPC architecture are now available that use partially depleted SOI processes with feature size of 90 nm and internal core voltage as low as 1.0 V and clock frequency in the GHz range. Previously, we reported SEU measurements for SOI commercial PowerPCs with feature size of 0.18 and 0.13 m [7, 8]. The results showed an order of magnitude reduction in saturated cross section compared to CMOS bulk counterparts. This paper examines SEUs in advanced commercial SOI microprocessors, focusing on SEU sensitivity of D-Cache and hangs with feature size and internal core voltage. Results are presented for the Motorola SOI processor with feature sizes of 0.13 microns and internal core voltages of 1.3 and 1.1 V. These results are compared with results for the Motorola SOI processors with feature size of 0.18 microns and internal core voltage of 1.6 and 1.3 V.
Transgenic mice that differed in their p53 genetic status were exposed to an acute dose of highly charged and energetic (HZE) iron particle radiation. Micronuclei (MN) in two distinct populations of circulating peripheral blood erythrocytes, the immature reticulocytes (RETs) and the mature normochromatic erythrocytes (NCEs), were measured using a simple and efficient flow cytometric procedure. Our results show significant elevation in the frequency of micronucleated RETs (%MN-RETs) at 2 and 3 days post-radiation. At 3 days post-irradiation, the magnitude of the radiation-induced MN-RET was 2.3-fold higher in the irradiated p53 wild-type animals compared to the unirradiated controls, 2.5-fold higher in the p53 hemizygotes and 4.3-fold higher in the p53 nullizygotes. The persistence of this radiation-induced elevation of MN-RETs is dependent on the p53 genetic background of the animal. In the p53 wild-type and p53 hemizygotes, %MN-RETs returned to control levels by 9 days post-radiation. However, elevated levels of %MN-RETs in p53 nullizygous mice persisted beyond 56 days post-radiation. We also observed elevated MN-NCEs in the peripheral circulation after radiation, but the changes in radiation-induced levels of MN-NCEs appear dampened compared to those of the MN-RETs for all three strains of animals. These results suggest that the lack of p53 gene function may play a role in the iron particle radiation-induced genomic instability in stem cell populations in the hematopoietic system.
Fragmentation processes of heavy nuclei in matter using the heavy-ion capability of the Bevatron were studied. The purpose was to obtain the single particle inclusive spectra of secondary nuclei produced at 0 deg by the fragmentation of heavy ion beam projectiles. The process being examined is B+T yields F + anything, where B is the beam nucleus, T is the target nucleus, and F is the detected fragment. The fragments F are isotopically identified by experimental procedures involving magnetic analysis, energy loss and time-of-flight measurements. Attempts were also made to: (1) measure the total and partial production cross section for all isotopes, (2) test the applicability of high-energy multi-particle interaction theory to nuclear fragmentation, (3) apply the cross-section data and fragmentation probabilities to cosmic ray transport theory, and (4) search for systematic behavior of fragment production as a means to improve existing semi-empirical theories of cross sections.
An energy-dependent, perturbation expansion solution for heavy-ion transport in one dimension was used to calculate the dose from Ne-20 beams at incident kinetic energies of 350, 670, and 2000 MeV/amu onto selected organic composites. Transport coefficients, applicable to arbitrary ion beams over a broad range of energies, are presented. Polyethylene and Kapton were tested as constituents of multilayered shielding for spacecraft and astronauts.
One major obstacle to human space exploration is the possible limitations imposed by the adverse effect of long-term exposure to the space environment. Even before human spaceflight began, the potentially brief exposure of astronauts to the very intense random solar particle events (SPE) were of great concern. A new challenge appears in deep space exploration from exposure to the low-intensity heavy-ion flux of the galactic cosmic rays (GCR) since the missions are of long duration and the accumulated GCR exposures can be high. Because cancer induction rates increase behind low to rather large thicknesses of aluminum shielding, according to available biological data on mammalian exposures to GCR like ions, the shield requirements for a Mars mission are prohibitively expensive in terms of mission launch costs. Therefore, a critical issue in the Human Exploration and Development of Space enterprise is cost effective mitigation of risk associated with ionizing radiation exposure. In order to estimate astronaut risk to GCR exposure and associated cancer risks and health hazards, it is necessary to do shield material studies. To determine an optimum radiation shield material it is necessary to understand nuclear interaction processes such as fragmentation and secondary particle production which is a function of energy dependent cross sections. This requires knowledge of material transmission characteristics either through laboratory testing or improved theoretical modeling. Here ion beam transport theory is of importance in that testing of materials in the laboratory environment generated by particle accelerators is a necessary step in materials development and evaluation for space use. The approximations used in solving the Boltzmann transport equation for the space setting are often not sufficient for laboratory work and those issues are a major emphasis of the present work.