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At least 55 records · Page 3

Nanosecond, Time-Resolved Shift of the Photoluminescence Spectra of Organic, Lead-Halide Perovskites Reveals Structural Features Resulting from Excess Organic Ammonium Halide

The effort to drive solution-based perovskite solar cells toward higher efficiency has been considerable, reaching over 24%. Such progress has been made possible by the low-energy barrier to crystallization. The low-energy barrier in the reverse direction, however, also renders them susceptible to dissociation from heat, moisture, and photoexcitation. Consequently, studies that provide information on the stability of perovskites are of considerable importance. It has been reported that perovskite crystals formed using different stoichiometries of the organic precursors and metal halide are equivalent. Our findings, however, suggest that the difference in reaction pathways affects the quality of the final crystal and that changes in morphology and the production of any defects can lead to differences in behavior under illumination. Here, we present photoluminescence spectra subsequent to nanosecond photoexcitation of perovskites synthesized under various conditions. Our results indicate that the presence of excess precursors (i.e., CH 3 NH 3 X, X = I and surfactant) gives rise to an ~20 ns relaxation time with which the photoluminescence spectrum achieves its equilibrium value. This relaxation is absent in bulk, polycrystalline materials. This is, to our knowledge, the first report of the ~20 ns relaxation time, which we attribute to cation migration. Furthermore, these structural changes are not detectable subsequent to photoexcitation by X-ray diffraction nor are they detectable by in situ X-ray diffraction during photoexcitation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Integration of Highly Luminescent Lead Halide Perovskite Nanocrystals on Transparent Lead Halide Nanowire Waveguides through Morphological Transformation and Spontaneous Growth in Water

The integration of highly luminescent CsPbBr 3 quantum dots on nanowire waveguides has enormous potential applications in nanophotonics, optical sensing and quantum communications. On the other hand, CsPb 2 Br 5 nanowires have also attracted a lot of attention due to their unique water stability and controversial luminescent property. Here we first report the growth of CsPbBr 3 nanocrystals on CsPb 2 Br 5 nanowires by simply immersing CsPbBr 3 powder into pure water, CsPbBr 3-γ X γ (X = Cl, I) nanocrystals on CsPb 2 Br 5-γ X γ nanowires are then synthesized for tunable light sources. Systematic structure and morphology studies, including in-situ monitoring, revealed that CsPbBr 3 powder was first converted to CsPb 2 Br 5 microplatelets in water, followed by a morphological transformation from CsPb 2 Br 5 microplatelets to nanowires, which is a kinetic dissolution-recrystallization process controlled by electrolytic dissociation and supersaturation of CsPb 2 Br 5 . CsPbB r3 nanocrystals are spontaneously formed on CsPb 2 Br 5 nanowires when nanowires are collected from the aqueous solution. Raman spectroscopy, combined photoluminescence and SEM imaging confirm that the bright emission originates from CsPbBr 3-γ X γ nanocrystals while CsPb 2 Br 5-γ X γ nanowires are transparent waveguides. In conclusion, the intimate integration of nanoscale light sources with a nanowire waveguide is demonstrated through the observation of the wave guiding of light from nanocrystals and Fabry-Perot interference modes of the nanowire cavity.

42 ENGINEERING↗

Toward High-Throughput Deposition of III-V Materials and Devices Using Halide Vapor Phase Epitaxy: Preprint

III-V devices are used in countless applications due to their excellent physical properties. They could become more prevalent, especially in area-intensive applications such as solar power, if they can achieve significant cost decreases through increasing scale. The development of high-throughput growth systems can help to achieve this scale, leading to the use of III-V devices in areas where they are not currently economically feasible. Here, we describe a pilot production, pseudo inline HVPE reactor with the potential to greatly increase the throughput of III-V devices. We show computational modeling results that both informed system design and the understanding of the impact of different process parameters on the deposition. We show the throughput possibilities of this reactor with an example solar cell device design but note that this system is agnostic to the device structure and can be used to increase the throughput of lasers, LEDs, transistors, and more III-V devices.

high throughput↗