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We have systematically measured both the length and temperature dependence of the intermediate frequency (IF) bandwidth of hot-electron bolometer (HEB) mixer made form a high-T(sub c) superconductor (HTS).
We report on the first mixing experiments at submillimeter wavelengths with superconducting diffusion-cooled hot-electron bolometers (HEB's) made from aluminum.
We have measured the device length and temperature dependence of the intermediate frequency (IF) bandwidth and noise of hot-electron bolometert (HEB) mixers made from a high-T***subc*** superconductor.
Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.
A batch of experimental diffusion-cooled hot-electron bolometers (HEBs), suitable for use as mixers having input frequencies in the terahertz range and output frequencies up to about a gigahertz, exploit the superconducting/normal-conducting transition in a thin strip of tantalum. The design and operation of these HEB mixers are based on mostly the same principles as those of a prior HEB mixer that exploited the superconducting/normal- conducting transition in a thin strip of niobium and that was described elsewhere.
Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz frequency spectroscopy within astrophysics.
Recently we have presented a concept for a hot-electron direct detector (HEDD) capable of counting single millimeter-wave photons.
A new theoretical model is introduced to describe heterodyne mixer conversion efficiency and noise (from thermal fluctuation effects) in diffusion-cooled superconducting hot-electron bolometers.
The development of a YBa(sub 2)Cu(sub 3)O(sub 7-(kronecker delta))(YBCO) hot-electron bolometer (HEB) quasioptical mixer for a 2.5 heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate. The mixer performance expected for this device is analyzed in the framework of a two-temperature model which includes heating both of the electrons and the lattice. Also, the contribution of heat diffusion from the film through the substrate and from the film to the normal metal contacts is evaluated....a single sideband temperature of less than 2000k is predicted.
The noise performance of a Nb hot-electron bolometer mixer at 2.5 THz has been investigated. The devices are fabricated from a 12-nm-thick Nb film, and have a 0.30 micrometer x 0.15 micrometer in-plane size, thus exploiting diffusion as the electron cooling mechanism. The rf coupling was provided by a twin-slot planar antenna on an elliptical Si lens. The experimentally measured double sideband noise temperature of the receiver was as low as 2750 +/- 250 K with an estimated mixer noise temperature of approximately equal 900 K. The mixer bandwidth derived from both noise bandwidth and IF impedance measurements was approximately equal 1.4 GHz. These results demonstrate the low-noise operation of the diffusion-cooled bolometer mixer above 2 THz.
We discuss a new type of direct detector, a silicon hot-electron bolometer, for measurements in the far-infrared and submillimeter spectral ranges. High performance bolometers can be made using the electron-phonon conductance in heavily doped silicon to provide thermal isolation from the cryogenic bath. Noise performance is expected to be near thermodynamic limits, allowing background limited performance for many far infrared and submillimeter photometric and spectroscopic applications.
We have demonstrated the first very long wavelength (16 micrometer) infrared hot electron transistor (IHET). This device utilizes a bound to continuum quantum well infrared photodetector (QWIP) as a photosensitive emitter, a wide quantum well as a base, and a thick Al_xGa_(1-x)As barrier between the base and the collector as an energy discriminating filter. This energy filter blocks the lower energy electrons, which drain through the base while higher energy photo electrons pass to the collector. Therefore, the detectivity of the device at the collector is much higher than the detectivity at the emitter.
The relaxation dynamics of hot electrons in the X6 and X7 satellite and upper conduction bands in GaP was directly measured by femtosecond UV-pump-IR-probe absorption spectroscopy. From a fit to the induced IR-absorption spectra the dominant scattering mechanism giving rise to the absorption at early delay times was determined to be intervalley scattering of electrons out of the X7 upper conduction-band valley. For long delay times the dominant scattering mechanism is electron-hole scattering. Electron transport dynamics of the upper conduction band of GaP has been time resolved.
The prospects of a YBa2Cu3O7(delta)(YBCO) hot-electron bolometer (HEB) mixer for a THz heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate.
A document proposes the development of hot-electron photon counters (HEPCs) for detecting terahertz photons in spaceborne far-infrared astronomical instruments. These would be superconducting- transition-edge devices: they would contain superconducting bridges that would have such low heat capacities that single terahertz photons would cause transient increases in their electron temperatures through the superconducting- transition range, thereby yielding measurable increases in electrical resistance. Single devices or imaging arrays of the devices would be fabricated as submicron-sized bridges made from films of disordered Ti (which has a superconducting- transition temperature of .0.35 K) between Nb contacts on bulk silicon or sapphire substrates. In operation, these devices would be cooled to a temperature of .0.3 K. The proposed devices would cost less to fabricate and operate, relative to integrating bolometers of equal sensitivity, which must be operated at a temperature of approx. = 0.1 K.
We report on the first heterodyne measurements with a diffusion-cooled hot-electron bolometer mixer in the submillimeter wave band, using a waveguide mixer cooled to 2.2 K. The best receiver noise temperature at a local oscillator frequency of 533 GHz and an intermediate frequency of 1.4 GHz was 650 K (double sideband). The 3 dB IF roll-off frequency was around 1.7 to 1.9 GHz, with a weak dependence on the device bias conditions.
Diffusion-cooled Nb hot-electron bolometer (HEB) mixers have the potential to simultaneously achieve high intermediate frequency (IF) bandwidths and low mixer noise temperatures for operation at THz frequencies (above the superconductive gap energy). We have measured the IF signal bandwidth at 630 GHz of Nb devices with lengths L = 0.3, 0.2, and 0.1 micrometer in a quasioptical mixer configuration employing twin-slot antennas. The 3-dB EF bandwidth increased from 1.2 GHz for the 0.3 gm long device to 9.2 GHz for the 0.1 gm long device. These results demonstrate the expected 1/L squared dependence of the IF bandwidth at submillimeter wave frequencies for the first time, as well as the largest EF bandwidth obtained to date. For the 0.1 gm device, which had the largest bandwidth, the double sideband (DSB) noise temperature of the receiver was 320-470 K at 630 GHz with an absorbed LO power of 35 nW, estimated using the isothermal method. A version of this mixer with the antenna length scaled for operation at 2.5 THz has also been tested. A DSB receiver noise temperature of 1800 plus or minus 100 K was achieved, which is about 1,000 K lower than our previously reported results. These results demonstrate that large EF bandwidth and low-noise operation of a diffusion-cooled HEB mixer is possible at THz frequencies with the same device geometry.
We describe superconducting diffusion-cooled hot-electron bolometers that were fabricated fromtantalum films grown on a thin niobium seed layer. The seed layer promotes single-phase growth of the Ta films, resulting in high-quality bolometers with transition temperatures up to 2.35 K and transition widths of less than 0.2 K. An S-parameter measurement set-up in a He-3 cryostat was used to measure device impedance versus frequency of a 400 nm long device at a temperature of 400 mK. It is shown that a 3 dB roll-off frequency of about 1 GHz can be achieved when the device resistance matches the impedance of the embedding network (no electrothermal feedback). This would lead to a prediction of 16 GHz for a 100 nm device, and indicates that a heterodyne mixer using a Ta HEB should be able to operate at several GHz even with a significant amount of electrothermal feedback.