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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Materials Data on Ge(BrF5)2 by Materials Project

Ge(BrF5)2 crystallizes in the monoclinic P2_1/c space group. The structure is one-dimensional and consists of two Ge(BrF5)2 ribbons oriented in the (1, 0, 0) direction. Ge is bonded in an octahedral geometry to six F atoms. There is two shorter (1.76 Å) and four longer (1.89 Å) Ge–F bond length. Br is bonded in a rectangular see-saw-like geometry to four F atoms. There are a spread of Br–F bond distances ranging from 1.78–2.20 Å. There are five inequivalent F sites. In the first F site, F is bonded in a single-bond geometry to one Br atom. In the second F site, F is bonded in a single-bond geometry to one Br atom. In the third F site, F is bonded in a distorted bent 120 degrees geometry to one Ge and one Br atom. In the fourth F site, F is bonded in a distorted bent 120 degrees geometry to one Ge and one Br atom. In the fifth F site, F is bonded in a single-bond geometry to one Ge atom.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Single crystal growth and thermoelectric properties of Nowotny chimney-ladder compound Fe 2 Ge 3

Fe 2 Ge 3 with an incommensurate Nowotny chimney-ladder (NCL) structure is a promising material for thermoelectric applications due to its low thermal conductivity. Previous experimental studies on Fe 2 Ge 3 have mainly focused on polycrystalline samples, resulting in a limited understanding of the material's intrinsic thermoelectric properties and the underlying causes of its low thermal conductivity. Here we report the synthesis and thermoelectric properties of single crystalline Fe 2 Ge 3 . Millimeter-sized Fe 2 Ge 3 single crystals grown by the chemical vapor transport method enable the study of the intrinsic thermoelectric properties. The Seebeck coefficient of Fe 2 Ge 3 is negative and its magnitude increases linearly with temperature, showing a degenerate n-type semiconductor behavior. Analysis of the electrical resistivity and specific heat data indicates the existence of an Einstein mode with a characteristic temperature of about 60 K, suggesting the presence of low-energy optical phonons. Further, the thermal conductivity of Fe 2 Ge 3 along the c axis is as low as 1.9Wm -1 K -1 at 300 K and exhibits a nearly temperature-independent characteristic, which is distinct from the previous theoretical calculations with a stronger temperature dependence. The low thermal conductivity may be attributed to the scattering of acoustic phonons by low-energy optical modes and the presence of non-extended diffuson modes, as reported in another NCL compound, MnSi 1.74 . This study provides valuable insights into the electrical and thermal properties of Fe 2 Ge 3 , which can open up possibilities for future advances in thermoelectric applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Unidirectional growth of graphene nano-islands from carbon cluster seeds on Ge(1 1 0)

The anisotropic twofold symmetry of Ge(1 1 0) makes it a unique substrate for the growth of single-crystalline graphene. However, the underlying mechanism during the initial stage of growth of graphene on Ge(1 1 0) surface is not well understood. Here, we use in-situ cryogenic scanning tunneling microscopy (STM) and spectroscopy (STS), to study the initial growth properties of graphene synthesized on Ge(1 1 0) surface with ethylene precursor gases. The STM results reveal that the unidirectional growth of the graphene nanoribbons (GNRs) initiates from carbon cluster seeds on terraces during the early stage of the growth. The orientations of the GNRs show the same directions which are nearly parallel to the direction of the Ge(1 1 0) surface. This orientation is the same as that of the wafer-scale graphene grown on Ge(1 1 0). Subsequent growth, transformed the GNRs to graphene nanoislands (GNIs), which eventually coalesced to form single crystalline monolayer graphene. STS measurements demonstrated that the GNRs have small bandgaps induced by the confinement effect of graphene. Furthermore, this study provides an in-depth understanding of the growth mechanism of graphene on Ge(1 1 0) surface in various synthesis conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins

A recently discovered, enhanced Ge diffusion mechanism along the oxidizing interface of Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and quantum dots embedded in a defect-free, single-crystal SiGe matrix. Here, we report oxidation studies of Si/SiGe nanofins aimed at gaining a better understanding of this novel diffusion mechanism. Here, a superlattice of alternating Si/Si 0.7 Ge 0.3 layers was grown and patterned into fins. After oxidation of the fins, the rate of Ge diffusion down the Si/SiO 2 interface was measured through the analysis of HAADF-STEM images. The activation energy for the diffusion of Ge down the sidewall was found to be 1.1 eV, which is less than one-quarter of the activation energy previously reported for Ge diffusion in bulk Si. Through a combination of experiments and DFT calculations, we propose that the redistribution of Ge occurs by diffusion along the Si/SiO 2 interface followed by a reintroduction into substitutional positions in the crystalline Si.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is graphite structured and crystallizes in the hexagonal P6_3mc space group. The structure is two-dimensional and consists of two Ge sheets oriented in the (0, 0, 1) direction. Ge is bonded in a trigonal non-coplanar geometry to three equivalent Ge atoms. All Ge–Ge bond lengths are 2.44 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Structural and electronic characteristics of amorphous Ge 8 Sb 2 Te 11

GeTe-rich phase-change materials can be utilized in rewriteable optical memory due to the large contrast in reflectivity between amorphous and crystalline phases. Here we explored the structure and electronic properties of amorphous Ge 8 Sb 2 Te 11 using ab initio molecular dynamics simulations. The results indicate that amorphous Ge 8 Sb 2 Te 11 is dominantly composed of Ge-, Sb- and Te-centered octahedrons with distortions, while 30.4 % of Ge-centered clusters are in the form of tetrahedrons which are randomly distributed. The 5-fold rings possess a large proportion, and the Gesingle bondTe and Sbsingle bondTe bonds present larger formation energies than other bonds, leading to the ABAB bonding sequence (A: Ge and Sb, B: Te). The lone pair electrons locating at the opposite direction of bonds possess a large fraction of 14.8 %, which may enhance the distortions of local clusters. Importantly, these structural properties lead to the high stability of amorphous Ge 8 Sb 2 Te 11 and thus long data retention in the information storage.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Valence Disproportionation of GeS in the PbS Matrix Forms Pb 5 Ge 5 S 12 Inclusions with Conduction Band Alignment Leading to High n-Type Thermoelectric Performance

Converting waste heat into useful electricity using solid-state thermoelectrics has a potential for enormous global energy savings. Lead chalcogenides are among the most prominent thermoelectric materials, whose performance decreases with an increase in chalcogen amounts (e.g., PbTe>PbSe>PbS). Herein, we demonstrate the simultaneous optimization of the electrical and thermal transport properties of PbS-based compounds by alloying with GeS. The addition of GeS triggers a complex cascade of beneficial events as follows: Ge 2+ substitution in Pb 2+ and discordant off-center behavior; formation of Pb 5 Ge 5 S 12 as stable second phase inclusions through valence disproportionation of Ge 2+ to Ge0 and Ge 4+ . PbS and Pb 5 Ge 5 S 12 exhibit good conduction band energy alignment that preserves the high electron mobility; the formation of Pb 5 Ge 5 S 12 increases the electron carrier concentration by introducing S vacancies. Sb doping as the electron donor produces a large power factor and low lattice thermal conductivity (κ lat ) of ~0.61 Wm -1 K -1 . The highest performance was obtained for the 14% GeS-alloyed samples, which exhibited an increased room temperature electron mobility of ~121 cm 2 V -1 s -1 for 3 × 10 19 cm -3 carrier density, and a ZT, of 1.32 at 923 K. This is ~ 55% greater that the corresponding Sb-doped PbS sample and is one of the highest reported for the n-type PbS system. Moreover, the average ZT (ZT avg ) of ~0.76 from 400 to 923 K is the highest for PbS-based systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

Highly conductive Ge-doped AlN with conductivity of 0.3 (Ω cm) −1 and electron concentration of 2 × 10 18 cm −3 was realized via a non-equilibrium process comprising ion implantation and annealing at a moderate thermal budget. Similar to a previously demonstrated shallow donor state in Si-implanted AlN, Ge implantation also showed a shallow donor behavior in AlN with an ionization energy ∼80 meV. Ge showed a 3× higher conductivity than its Si counterpart for a similar doping level. Photoluminescence spectroscopy indicated that higher conductivity for Ge-doped AlN was achieved primarily due to lower compensation. This is the highest n-type conductivity reported for AlN doped with Ge to date and demonstration of technologically useful conductivity in Ge-doped AlN.

Bagheri, Pegah↗
DOE OSTI2020

Soft-mode enhanced type-I superconductivity in LiPd 2 Ge

The synthesis, crystal structure, and physical properties (magnetization, resistivity, heat capacity) in combination with theoretical calculations of the electronic structure and phonon properties are reported for intermetallic compounds LiPd 2 X ( X = Si, Ge, and Sn). LeBail refinement of powder x-ray diffraction data confirms that all compounds belong to the Heusler family (space group $\textit{F m-3m}$, No. 225). The lattice parameter increases with atomic size of X , and its value varies from $\textit{a}$ = 5.9059(4) Å for LiPd 2 Si and $\textit{a}$ = 6.0082(3)Å for LiPd 2 Ge, to $\textit{a}$ = 6.2644(1) Å for LiPd 2 Sn. The first compound, LiPd 2 Si, has apparently not been previously reported. All measured quantities demonstrate that LiPd 2 Ge exhibits superconductivity below $T_c$ = 1.96 K and the normal- and superconducting-state data indicate that it is a weak-strength type-I superconductor ($C/γT_c$ = 1.38) with electron-phonon coupling constant $λ_{e–p}$ = (0.53–0.56). LiPd 2 Si and LiPd 2 Sn are not superconducting above 1.68 K. The experimental observations are supported by theoretical calculations which show that LiPd 2 Ge has the highest computed $λ_{e–p}$ and $T_c$ of the group. A strong softening of the acoustic phonon mode is calculated, and in the case of X = Ge and Sn, imaginary phonon frequencies were computed. In this work, the soft mode is most pronounced in the case of LiPd 2 Ge, which suggests its correlation with superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Incommensurate spin density wave and magnetocaloric effect in the metallic triangular lattice HoAl 2 Ge 2

Here, we report the magnetic structure and the magnetocaloric effect (MCE) of the ternary compound HoAl 2 Ge 2 with a trigonal CaAl 2 Si 2 -type crystal structure. A neutron powder diffraction experiment reveals that HoAl 2 Ge 2 exhibits an incommensurate spin density wave (SDW) with a propagation vector k=(0.23,0,0.06). The special arrangement of magnetic moments in HoAl 2 Ge 2 induces interesting physical phenomena and large magnetocaloric effects. The rise in resistivity at low temperatures indicates the effect of the SDW state in the electronic transport. The maximum magnetic-entropy change is –16.1J/kg K under a magnetic field change of 0–70 kOe for an isotropic HoAl 2 Ge 2 powder and it increases to –17.9J/kg K for a single crystal when the magnetic field (H) is applied parallel to the ab plane. A large rotating magnetic-entropy change of –5.1J/kg K for H=20 kOe in a HoAl 2 Ge 2 single crystal is obtained, which is closely associated to the magnetic anisotropy of the SDW order and its response to the external magnetic field. We discuss the large MCE in terms of the field-induced metamagnetic transition from the incommensurate SDW order to the ferromagnetic order. Our study establishes the triangular lattice R Al 2 Ge 2 (R=rare-earth elements) as a unique family of compounds to explore the existence of the incommensurate spin density waves and the correlated physical properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Quenching of the octupole rotational band in 71 Ge

The main goal of this study was to enhance the knowledge of the properties of the known octupole rotational band in 71 Ge, including transition rates, and to investigate whether the band persists to higher spin. An experiment at Florida State University using the 62 Ni ( 14 C, 𝛼⁢𝑛) reaction at 50 MeV was used to produce 71 Ge at high spin. An array of ten Compton-suppressed Ge detectors, consisting of three Clover detectors and seven single-crystal detectors, was used to measure the 𝛾 decays in coincidence. An analysis of the resulting coincidence spectra resulted in the placement of 13 additional transitions in the 71 Ge level scheme, one of which (1092 keV) extends the octupole band to a (35/2 − ) state at 8206 keV. However, calculations of the kinematic moment of inertia show that the 1092-keV transition disrupts the rigid rotational pattern and is likely associated with a band crossing, potentially quenching the octupole deformation. Transition strengths inferred from lifetime measurements in the octupole band are not well reproduced by either shell-model calculations using the JUN45 interaction or a semimicroscopic cluster model, while those for the 𝜈⁢𝑔 9/2 band are in good agreement with the corresponding shell-model predictions. Comparisons between the octupole band in 71 Ge and negative-parity bands based on 3 − octupole states in some neighboring even-even nuclei show both similarities and differences. Systematic trends within the 𝜈⁢𝑔 9/2 bands among odd-𝐴 Ge isotopes point to increased collectivity near 𝑁 = 40.

59 ≤ A ≤ 89↗
DOE OSTI2020

Large anomalous Nernst and inverse spin-Hall effects in epitaxial thin films of kagome semimetal Mn 3 Ge

Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn 3 Ge , an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall/Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D 0 19 Mn 3 Ge that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our Mn 3 Ge films is estimated to be 0.1 μV/K and is comparable to that in ferromagnetic Fe, despite Mn 3 Ge having a weak magnetization of ~ 3.5 m μ B / Mn at room temperature. In this work, the spin-mixing conductance is 90.5 nm – 2 at the Py / Mn 3 Ge interface, and the spin-Hall angle in Mn 3 Ge is estimated to be about eight times of that in Pt.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Co 3 Ga 2 Ge 5 : Probing site mixing of the Ru 3 Sn 7 structure type with elements difficult to distinguish by diffraction

Co 3 Ga 2 Ge 5 was synthesized through arc-melting stoichiometric ratios of the elements, and a Ru 3 Sn 7 -type structure was confirmed by X-ray diffraction. Because Co 3 Ga 2 Ge 5 contains Ga and Ge, which have very similar X-ray and neutron scattering factors, any Ga/Ge crystallographic site preference cannot be determined with diffraction alone. The purpose of this study is to highlight the importance of using multiple techniques to characterize otherwise structurally ambiguous intermetallic compounds. Here, we utilize 71 Ga nuclear magnetic resonance spectroscopy and an analysis of the X-ray absorption fine structure to clarify the amount of Ga/Ge site mixing. Our combined use of X-ray diffraction and spectroscopy provides a comprehensive structural analysis of Ga site mixing across the Ge crystallographic sites, enhancing the understanding of the structure and properties of Co 3 Ga 2 Ge 5 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is Copper structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Ge is bonded to twelve equivalent Ge atoms to form a mixture of edge, face, and corner-sharing GeGe12 cuboctahedra. All Ge–Ge bond lengths are 3.03 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is diamond structured and crystallizes in the cubic Fd-3m space group. The structure is three-dimensional. Ge is bonded to four equivalent Ge atoms to form corner-sharing GeGe4 tetrahedra. All Ge–Ge bond lengths are 2.50 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is Tungsten structured and crystallizes in the cubic Im-3m space group. The structure is three-dimensional. Ge is bonded in a body-centered cubic geometry to eight equivalent Ge atoms. All Ge–Ge bond lengths are 2.94 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is beta Sn structured and crystallizes in the tetragonal I4_1/amd space group. The structure is three-dimensional. Ge is bonded to six equivalent Ge atoms to form a mixture of distorted edge and corner-sharing GeGe6 pentagonal pyramids. There are four shorter (2.69 Å) and two longer (2.87 Å) Ge–Ge bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ge by Materials Project

Ge is Lonsdaleite structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. Ge is bonded to four equivalent Ge atoms to form corner-sharing GeGe4 tetrahedra. There are three shorter (2.49 Å) and one longer (2.50 Å) Ge–Ge bond lengths.

36 MATERIALS SCIENCE↗