Vertical Gallium Nitride (GaN) Transistors For Extreme Environments
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Ewing, Daniel↗
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Vertical Gallium nitride transistors for extreme environment operation
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Ewing, Daniel↗
Predictions for Yellow Luminescence In Cubic Gallium Nitride Under Pressure.
Abstract not provided.
Edwards, Arthur H.↗
Ultra-Wide-Bandgap Aluminum Gallium Nitride for Power-Conversion and Radio-Frequency Applications.
Abstract not provided.
Reza, Shahed↗
Investigating Lock On in Gallium Nitride Photoconductive Solid State Switches.
Abstract not provided.
Lehr, Jane↗
Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique.
Abstract not provided.
Rummel, Brian↗
Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique.
Abstract not provided.
Rummel, Brian↗
Investigating Operation Modes in Gallium Nitride Photoconductive Switches
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Gonzalez Padilla, Nicolas↗
New Concepts for a High Power 805 MHz RF Amplifier for LANSCE using Gallium Nitride Semiconductors
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Accelerator Design, Technology, and Operations↗
Advanced Design Concepts for Vertical Gallium Nitride MOSFETs
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Binder, Andrew↗
Gallium Nitride Nonlocal Metasurfaces with Broken Vertical Symmetry
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Malek, Stephanie Claudia [Sandia National Laborato↗
Chiral nonlocal metasurfaces in gallium nitride with lithographically-defined vertical symmetry breaking
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Malek, Stephanie Claudia [Sandia National Laborato↗
Final Scientific/Technical Report, P-TYPE GALLIUM NITRIDE DOPING BY CONTROLLED MAGNESIUM DIFFUSION, DE-AR0001040
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99 GENERAL AND MISCELLANEOUS↗
Ultra-Wide-Bandgap Aluminum Gallium Nitride for Power-Conversion and Radio-Frequency Applications.
Abstract not provided.
Reza, Shahed↗
INVESTIGATING OPERATIONAL MODES IN GALLIUM NITRIDE PHOTOCONDUCTIVE SWITCHES.
Abstract not provided.
Maynard, Bradley↗
Gallium nitride electromagnetic pulse arrestor
A GaN diode EMP arrestor exhibits breakdown in <10 ns at reverse-bias voltage >20 kV. Additionally, the arrestor exhibits avalanche ruggedness at 1 kA/cm 2 in a 1 mm 2 device (i.e. 10 A absolute current) over a period of 500 ns following the onset of breakdown. Finally, the specific on-resistance in the forward direction is <20 mΩ cm 2 .
Kaplar, Robert↗