Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Ga”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures

The potential of wide-band-gap III-V nitrides as solar-blind ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN super lattices (digital alloys); and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, it should be possible to tailor the band gap of the composite to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a close lattice match (< 3%) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers could enable an extension of direct band-gap material towards the visible.

microscopy GaN AlN semiconductor SiC↗
NASA NTRS2010

An Approximately 4.35 Ga Ar-Ar Age for GRA 8 and the Complex Chronology of its Parent Body

GRA06128 and GRA06129 (hereafter GRA 8 and GRA 9) are partial melts of a parent body of approximately chondritic composition. We reported a conventional Sm-147-Nd-143 isochron age of 4.559+/-0.096 Ga and a 146 Sm-142Nd model age of 4.549+/-0.036 for combined data for the two rocks. Plagioclase plus whole rock and leachate (approx.phosphate) samples gave a secondary Sm-147-Nd-143 age of 3.4+/-0.4 Ga. An Ar-39-Ar-40 age of 4.460+/-0.028 Ga was interpreted as dating metamorphism in GRA 9. We report Ar-39-Ar-40 ages in the range approx.4344-4366 Ma for GRA 8, establishing similar but different Ar-39-Ar-40 ages for the two rocks, consistent with their different Sr-isotopic systematics, and discuss these ages in the context of the complex sequence of events that affected these samples.

Park, J.↗
NASA NTRS2010

An Approximately 4.35 Ga Ar-Ar Age for GRA 8 and the Complex Chronology of its Parent Body

GRA06128 and GRA06129 (hereafter GRA 8 and GRA 9) are partial melts of a parent body of approximately chondritic composition. We reported a conventional SM-147Sm-ND_143 isochron age of 4.559 +/-.096 Ga and a SM-146-142Nd model age of 4.549 +/- 0.036 for combined data for the two rocks. Plagioclase plus whole rock and leachate (approximately phosphate) samples gave a secondary SM-147-ND-143 age of 3.4 +/-0.4 Ga. An Ar-39-Ar-40 age of 4.460+/-0.028 Ga was interpreted by as dating metamorphism in GRA 9. We report Ar-39-Ar-40 ages in the range approximately 4344-4366 Ma for GRA 8, establishing similar but different Ar-39-Ar-40 ages for the two rocks, consistent with their different Sr-istopic systematics, and discuss these ages in the context of the complex sequence of events that affected these samples

Park, J.↗
NASA NTRS1975

Effectiveness of spoilers on the GA(W)-1 airfoil with a high performance Fowler flap

Two-dimensional wind-tunnel tests were conducted to determine effectiveness of spoilers applied to the GA(W)-1 airfoil. Tests of several spoiler configurations show adequate control effectiveness with flap nested. It is found that providing a vent path allowing lower surface air to escape to the upper surface as the spoiler opens alleviates control reversal and hysteresis tendencies. Spoiler cross-sectional shape variations generally have a modest influence on control characteristics. A series of comparative tests of vortex generators applied to the (GA-W)-1 airfoil show that triangular planform vortex generators are superior to square planform vortex generators of the same span.

Wentz, W. H., Jr.↗
NASA NTRS1977

On the dissolution properties of GaAs in Ga

The dissolution of GaAs in Ga was studied to determine the nature and cause of faceting effects. Ga was allowed to dissolve single crystalline faces under isothermal conditions. Of the crystalline planes with low number indices, only the (100) surface showed a direct correlation of dissolution sites to dislocations. The type of dissolution experienced depended on temperature, and there were three distinct types of behavior.

Davidson, M. C.↗
NASA NTRS1977

Force and pressure tests of the GA(W)-1 airfoil with a 20% aileron and pressure tests with a 30% Fowler flap

Wind tunnel force and pressure tests were conducted for the GA(W)-1 airfoil equipped with a 20% aileron, and pressure tests were conducted with a 30% Fowler flap. All tests were conducted at a Reynolds number of 2.2 and a Mach number of 0.13. The aileron provides control effectiveness similar to ailerons applied to more conventional airfoils. Effects of aileron gaps from 0% to 2% chord were evaluated, as well as hinge moment characteristics. The aft camber of the GA(W)-1 section results in a substantial up-aileron moment, but the hinge moments associated with aileron deflection are similar to other configurations. Fowler flap pressure distributions indicate that unseparated flow is achieved for flap settings up to 40 deg., over a limited angle of attack range. Theoretical pressure distributions compare favorably with experiments for low flap deflections, but show substantial errors at large deflections.

Wentz, W. H., Jr.↗
NASA NTRS1978

Ge:Ga and Ge:Be photoconductive detectors for far infrared astronomy from a space platform

The paper describes some of the development work on gallium-doped germanium (Ge:Ga) and beryllium-doped germanium (Ge:Be) photoconductive detectors for use in far-infrared astronomical observations from a space platform such as IRAS. The paper is concerned primarily with detector performance and is divided into two major parts. The first presents the operating principles of this type of detector, while the second presents measured performance data under low-background flux conditions. It is shown that high sensitivity can be obtained from Ge:Ga and Ge:Be detectors under low-background and low-temperature conditions of operation. These detectors are useful for astronomical observations in the far-infrared over the wavelength range 30-120 microns. Major conclusions of the research work done so far are mentioned, including that detectors cut from the same crystal show reasonably good reproducibility of operating characteristics.

Bratt, P. R.↗
NASA NTRS1984

Coordination of Fe, Ga and Ge in high pressure glasses by Moessbauer, Raman and X-ray absorption spectroscopy, and geological implications

For some time, it has been recognized that the structure of silicate liquids has a great bearing on such magma properties as viscosity, diffusivity, and thermal expansion and on the extrapolation of thermodynamic quantities outside of the experimentally measurable range. In this connection it is vital to know if pressure imposes changes in melt structure similar to the pressure-induced reconstructive transformations in crystals. In the present study on 1 bar and high pressure glasses, an investigation is conducted regarding the coordination of Fe(3+) in Fe silicate glasses by Moessbauer spectroscopy. Raman spectroscopy is employed to explore the coordinations of Ge(4+) in GeO2 glasses and of Ga(3+) in NaGa silicate glasses, while the coordination of Ga(3+) in NaGaSiO4 glasses is studied with the aid of methods of X-ray absorption spectroscopy.

Fleet, M. E.↗
NASA NTRS1986

Variation of refractive index in strained In(x)Ga(1-x)As-GaAs heterostructures

In(x)Ga(1-x)As-GaAs heterostructures and strained-layer superlattices can be used as optical waveguides. For such applications it is important to know explicitly the refractive index variation with mismatch strain and with alloying in the ternary layer. Starting from the Kramers-Kronig integral dispersion relations, a model has been developed from which the refractive index change in the ternary layer of In(x)Ga(1-x)As-GaAs heterojunctions can be calculated. The results are presented and discussed. The expected changes in a superlattice have been qualitatively predicted.

Das, U.↗
NASA NTRS1986

Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

Dhar, S.↗
NASA NTRS1988

Development of a unit cell for a Ge:Ga detector array

Two modules of gallium-doped germanium (Ge:Ga) infrared detectors with integrated multiplexing readouts and supporting drive electronics were designed and tested. This development investigated the feasibility of producing two-dimensional Ge:Ga arrays by stacking linear modules in a housing capable of providing uniaxial stress for enhanced long-wavelength response. Each module includes 8 detectors (1x1x2 mm) mounted to a sapphire board. The element spacing is 12 microns. The back faces of the detector elements are beveled with an 18 deg angle, which was proved to significantly enhance optical absorption. Each module includes a different silicon metal-oxide semiconductor field effect transistor (MOSFET) readout. The first circuit was built from discrete MOSFET components; the second incorporated devices taken from low-temperature integrated circuit multiplexers. The latter circuit exhibited much lower stray capacitance and improved stability. Using these switched-FET circuits, it was demonstrated that burst readout, with multiplexer active only during the readout period, could successfully be implemented at approximately 3.5 K.

Source record↗
NASA NTRS1988

The growth of continents and some consequences since 1.5 Ga

The budget of Earth's oceanic sediment masses was discussed in terms of crustal growth and recycling. Based on estimates of the volume of oceanic sediments and the average age of oceanic crust, a continental denudation rate of 1.65 cu km/yr was computed. This crudely balances estimated crustal production rates of about 1 cu km/yr, but the efficiency of sediment loss via subduction, for example, must be considered. It was argued, on the basis of earthquake focal solutions, imagery of subduction zones, and plate kinematic reconstructions that little, if any, sediment was lost in this way. This yields a present day crustal growth rate of about 1 cu km/yr. The volume of continents to 1.5 Ga ago was discussed, assuming constant continental thickness and freeboard, and a constant hydrosphere volume. It was concluded that ocean ridge length was a factor of about 1.75 greater 1.5 Ga ago, but a major uncertainty is the average spreading rate in the past.

Howell, David G.↗
NASA NTRS1988

Characterization of direct readout Si:Sb and Si:Ga infrared detector arrays for space-based astronomy

Preliminary test results from the evaluation of Si:Sb and Si:Ga 58 x 62-element infrared detector arrays are presented. These devices are being characterized under background conditions and readout rates representative of operation in orbiting, crogenically-cooled infrared observatories. The arrays are hybridized to silicon direct-readout multiplexers which allow random-access and nondestructive readout. Array performance optimization is being conducted with a flexible microcomputer-based drive and readoaut electronics system. Preliminary Si:Sb measurements indicate a sense node capacitance of 0.06 pF, peak (28-micron) responsivity above 3 A/W at 2V bias, read noise of 130 rms e(-), dark current approximately 10 e(-)/s, and a well capacity greater than 10 to the 5th e(-). The limited test data available on the performance of the Si:Ga array are also discussed.

Mckelvey, Mark E.↗
NASA NTRS1988

Temperature stability of Al(x)Ga(1-x)As (x = 0-1) thermal oxide masks for selective-area epitaxy

The use of thermal oxides of Al(x)Ga(1-x)As (x = 0-1) as masking materials for selective-area epitaxy by a organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to 600 C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al(0.4)Ga(0.6)As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.

Jones, Stephen H.↗
NASA NTRS1988

Shubnikov-de Haas measurements of the 2-D electron gas in pseudomorphic In(0.1)Ga(0.9)As grown on GaAs

Shubnikov-de Hass (SdH) measurements performed on a 200 A layer of pseudomorphic In(0.10)Ga(0.90)As grown by MBE on undoped GaAs with an overlayer of Al(0.15)Ga(0.85)As are presented. These measurements were performed in magnetic fields up to 1.4 tesla at T in the range of 1.4-10 K. It was found that only one subband was populated with a density of 5.8 x 10 to the 11/cm-squared and an effective mass at the Fermi level m(asterisk) = (0.060 + or - 0.001)m(0).

Szydlic, P. P.↗
NASA NTRS1989

Stressed Ge:Ga photoconductors for space-based astronomy. (Is there life beyond 120 micron)

Information is given in viewgraph form. Information is given on the characteristics of stressed Ge:Ga, a spring type stress cavity, mounting hardware, materials parameters affecting dark current, and the behavior of low dark current stressed Ge:Ga. It is concluded that detectors exist today for background-limited detection at 200 microns, that researchers are narrowing in on the significant parameters that effect dark current in stressed photoconductors, that these findings may be applied to other photoconductor materials, and that some creative problem solving for an ionizing effect reset mechanism is needed.

Beeman, J. W.↗
NASA NTRS1990

Low-temperature microwave characteristics of pseudomorphic In(x)Ga(1-x) As/In(0.52)Al(0.48)As modulation-doped field-effect transistors

Low-temperature microwave measurements of both lattice-matched and pseudomorphic In(x)Ga(1-x)As/In(0.48)As (x = 0.53, 0.60, and 0.70) channel MODFETs on InP substrates were carried out in a cryogenic measurement system. The measurements were done in the temperature range of 77 to 300 K and in the frequency range of 0.5 to 11.0 GHz at different bias conditions. The cutoff frequency (fT) for the In(x)Ga(1-x)As/In(0.52)Al(0.48)As MODFETs improved from 22 to 29 GHz, 29 to 38 GHz, and 39 to 51 GHz, for x = 0.53, 0.60, and 0.70, respectively, as the temperature was lowered from 300 to 77 K, which is approximately a 31 percent increase at each composition. No degradations were observed in device performance. These results indicate an excellent potential of the pseudomorphic devices at low temperatures.

Lai, R.↗
NASA NTRS1983

Performance of Ge:Ga far infrared detectors

A systematic study was carried out of the properties of Ge:Ga photoconductive infrared detectors for wavelengths approx. 100 micron. The detectors studied were made from Ge:Ga with acceptor concentration N sub A approx. 2 x 10 exp 14/cu cm with both low compensation (10 exp -2) and ultralow compensation (10 exp -4). Noise measurements have been made as a function of background photon rate, bias voltage, and chopping frequency. Detective quantum efficiencies approaching unity have been observed over a side range of experimental parameters. Photocurrent has been measured as a function of voltage and temperature. Hall mobility and lifetime have been measured to determine their effect on detector properties. A small potential drop has been observed in nominally ohmic contacts produced by implantation of B ions.

Hueschen, M. R.↗