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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

A continuous record of tectonic evolution from 3.5 Ga to 2.6 Ga in Swaziland and northern Natal

The approx. 3.5 Ga-old bimodal suite underlying an extensive area in southwestern Swaziland comprises the oldest-dated sialic rocks in the Kaapvaal structural province. The suite consists of leucocratic, layered tonalitic-trondhjemitic gneisses and amphibolites characterized by the effects of repeated high strains. This suite is considered to represent a sialic basement on which metavolcanic and metasedimentary rocks, now preserved as scattered greenstone remnants, accumulated. Direct evidence to confirm this temporal relationship is lacking, but structural data from the Dwalile, Assegaai and Commondale areas indicate that (1) the bimodal gneisses experienced a complex structural history prior to the first recognizable deformation in the supracrustal rocks (i.e., D1 in the supracrustals is equivalent to Dn + 1 in the gneisses) and (2) scattered remnants of the Dwalile rocks infolded with the bimodal suite structurally overlie the gneisses and are preserved in synformal keels. Significant proportions of metaquartzites and metapelites are present in the Assegaai greenstone sequence, the presence of which implies the existence of felsic crust in the source area from which these sediments were derived, a conclusion that is consistent with the structural data.

Hunter, D. R.↗
NASA NTRS1986

Determination of carrier saturation velocity in high-performance In(y)Ga(1-y)As/Al(x)Ga(1-x)As modulation-doped field-effect transistors (with y between 0 and 0.2)

The relation between the intrinsic transconductance per unit gate width and the carrier saturation velocity, v(sat), is used to determine v(sat) for several high-performance pseudomorphic MODFET's with different InAs mole fractions (y). Measurements of In(y)Ga(1-y)As/AlGaAs MODFET's grown by MBE were found to give accurate v(sat) values at 77 K. Devices with y between 0 and 0.20 were shown to have higher v(sat) than conventional GaAs/AlGaAs MODFET's. An optimum y value for peak v(sat), which may optimize overall device performance, is expected.

Henderson, T. S.↗
NASA NTRS1992

Oxygen-induced Al surface segregation in Al(x)Ga(1-x)As and the effect of Y overlayers on the oxidation of the Y/Al(x)Ga(1-x)As interface

The oxidation of Al(x)Ga(1-x)As (x = 0.15, AlGaAs) was studied by AES and XPS at 350 C and different oxygen exposures (up to 5 x 10 exp 4 L). Also studied were the effects of yttrium overlayers (theta = 3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and nonyttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the nonyttriated surface. Also, while oxidation of the nonyttriated AlGaAs yielded mainly Al2O(x) (x less than 3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and nonyttriated surfaces were found to contain metallic As within the oxide layer.

Mesarwi, A.↗
NASA NTRS2002

Synthetic Vision Systems in GA Cockpit-Evaluation of Basic Maneuvers Performed by Low Time GA Pilots During Transition from VMC to IMC

An experimental investigation was conducted to study the effectiveness of modern flight displays in general aviation cockpits for mitigating Low Visibility Loss of Control and the Controlled Flight Into Terrain accidents. A total of 18 General Aviation (GA) pilots with private pilot, single engine land rating, with no additional instrument training beyond private pilot license requirements, were recruited to evaluate three different display concepts in a fixed-based flight simulator at the NASA Langley Research Center's General Aviation Work Station. Evaluation pilots were asked to continue flight from Visual Meteorological Conditions (VMC) into Instrument Meteorological Conditions (IMC) while performing a series of 4 basic precision maneuvers. During the experiment, relevant pilot/vehicle performance variables, pilot control inputs and physiological data were recorded. Human factors questionnaires and interviews were administered after each scenario. Qualitative and quantitative data have been analyzed and the results are presented here. Pilot performance deviations from the established target values (errors) were computed and compared with the FAA Practical Test Standards. Results of the quantitative data indicate that evaluation pilots committed substantially fewer errors when using the Synthetic Vision Systems (SVS) displays than when they were using conventional instruments. Results of the qualitative data indicate that evaluation pilots perceived themselves to have a much higher level of situation awareness while using the SVS display concept.

Takallu, M. A.↗
DOE OSTI2020

Liquid–Solid Mixtures of Ga Metal Infused with Cu Microparticles and Nanoparticles for Microscale and Nanoscale Patterning of Solid Metals at Room Temperature

This paper demonstrates and characterizes a simple ink for nanopatterning of solid metallic structures under ambient conditions by taking advantage of the low melting point of gallium and its affinity to form intermetallics with other metals. Bare copper micro- and nanoparticles readily mix with liquid gallium near room temperature to form a paste that ultimately amalgamates into a dense solid when mixed at the appropriate concentration ratios. The paste has sufficient shelf life that can be extruded from a nozzle at modest temperatures to form solid three-dimensional (3D) shapes. Additionally, the paste can be molded at room temperature to replicate feature sizes ranging from a few millimeters down to hundreds of nanometers. In situ X-ray diffraction (XRD) and thermo-mechanical analysis (TMA) data show gallium and copper readily interdiffuse to form the thermodynamically expected intermetallic phase. We describe the capabilities and limitations of a simple way to pattern solid metals in an additive fashion (syringe-based extrusion) and with high resolution (molding) at or near room temperature. Here, the use of a paste that solidifies provides a novel route for 3D printing of solid metals at ambient temperatures as well as the creation of micro- and nanostructured metallic surfaces that may be useful for optics, non-wetting surfaces, or electronic microcomponents.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Setting up resistive wall modeling for the GA Compact Advanced Tokamak (GA FPP) (Final Report)

Resistive wall implementation for tokamaks has been achieved by both a 'thin wall' approximation in which time-varying fields are matched across a boundary for all modes; and, by meshing the region from the first wall to the outer boundary and setting certain fields to mimic a resistive wall. Both implementations were tested on existing tokamaks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1991

Pseudomorphic In(y)Ga(1-y)As/GaAs/Al(x)Ga(1-x)As single quantum well surface-emitting lasers with integrated 45 deg beam deflectors

The paper reports on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-deg beam deflectors fabricated by ion beam etching. 100-micron-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-micron-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of about 20 deg. Lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

Kim, Jae-Hoon↗
NASA NTRS1991

Theoretical branching ratios for the 5I7 to 5I7 levels of Ho(3+) in the garnets A3B2C3O12 (A = Y,La,Lu,Gd; B = Al,Lu,Sc,Ga; C = Al,Ga)

Results are reported from an experimental study investigating triply ionized holmium in 10 garnets using the point-change model to predict theoretical energy levels and temperature-dependent branching ratios for the 5I7 to 5I8 manifolds for temperatures between 50 and 400 K. Plots were made for the largest lines at 300 K. YScAG was plotted twice, once for each set of X-ray data available. Energy levels are predicted based on theoretical crystal-field parameters, and good agreement to experiment is found. It is suggested that the present set of theoretical crystal-field parameters provides good estimates of the energy levels for the other hosts on which there are no experimental optical data. X-ray and index-of-refraction data are used to evaluate the performance of 10 lasers via a quantum mechanical model to predict the position of the energy levels and the temperature-dependent branching rations of the 5I7 to 5I8 levels of holmium. The fractional population inversion required for threshold is also evaluated.

Filer, Elizabeth D.↗
DOE OSTI2020

Materials Data on Ga by Materials Project

Ga crystallizes in the orthorhombic Cmcm space group. The structure is three-dimensional. there are six inequivalent Ga sites. In the first Ga site, Ga is bonded in a 9-coordinate geometry to nine Ga atoms. There are a spread of Ga–Ga bond distances ranging from 2.66–3.04 Å. In the second Ga site, Ga is bonded in a 6-coordinate geometry to eight Ga atoms. There are a spread of Ga–Ga bond distances ranging from 2.61–3.17 Å. In the third Ga site, Ga is bonded in a 3-coordinate geometry to eight Ga atoms. There are a spread of Ga–Ga bond distances ranging from 2.63–3.09 Å. In the fourth Ga site, Ga is bonded in a 3-coordinate geometry to ten Ga atoms. There are a spread of Ga–Ga bond distances ranging from 2.68–3.12 Å. In the fifth Ga site, Ga is bonded in a 2-coordinate geometry to nine Ga atoms. There are two shorter (2.64 Å) and one longer (2.94 Å) Ga–Ga bond lengths. In the sixth Ga site, Ga is bonded in a 9-coordinate geometry to nine Ga atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ga by Materials Project

Ga crystallizes in the trigonal R-3m space group. The structure is three-dimensional. there are five inequivalent Ga sites. In the first Ga site, Ga is bonded in a 6-coordinate geometry to six Ga atoms. There are a spread of Ga–Ga bond distances ranging from 2.61–2.89 Å. In the second Ga site, Ga is bonded in a 8-coordinate geometry to eight Ga atoms. There are a spread of Ga–Ga bond distances ranging from 2.77–3.01 Å. In the third Ga site, Ga is bonded in a 8-coordinate geometry to eight Ga atoms. There are one shorter (2.77 Å) and two longer (2.91 Å) Ga–Ga bond lengths. In the fourth Ga site, Ga is bonded in a distorted q6 geometry to ten Ga atoms. In the fifth Ga site, Ga is bonded in a distorted octahedral geometry to six equivalent Ga atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Zn acceptors in β-Ga 2 O 3 crystals

Electron paramagnetic resonance (EPR) is used to identify and characterize neutral zinc acceptors in Zn-doped β-Ga 2 O 3 crystals. Two EPR spectra are observed at low temperatures, one from Zn ions at tetrahedral Ga(1) sites (the $Zn$$^{0}_{Ga 1}$ acceptor) and one from Zn ions at octahedral Ga(2) sites (the $Zn$$^{0}_{Ga 2}$ acceptor). These Zn acceptors are small polarons, with the unpaired spin localized in each case on a threefold coordinated oxygen O(I) ion adjacent to the Zn ion. Resolved hyperfine interactions with neighboring 69 Ga and 71 Ga nuclei allow the EPR spectra from the two acceptors to be easily distinguished: $Zn$$^{0}_{Ga 1}$ acceptors interact equally with two Ga(2) ions and $Zn$$^{0}_{Ga 2}$ acceptors interact unequally with a Ga(1) ion and a Ga(2) ion. The as-grown crystals are compensated, with the Zn ions initially present as singly ionized acceptors ($Zn$$^{-}_{Ga 1}$ and $Zn$$^{-}_{Ga 2}$). Exposing a crystal to 325 nm laser light, while being held at 140 K, primarily produces neutral $Zn$$^{0}_{Ga 2}$ acceptors when photoinduced holes are trapped at $Zn$$^{-}_{Ga 2}$ acceptors. This suggests that there may be significantly more Zn ions at Ga(2) sites than at Ga(1) sites. Warming the crystal briefly to room temperature, after removing the light, destroys the EPR spectrum from the shallower $Zn$$^{0}_{Ga 2}$ acceptors and produces the EPR spectrum from the more stable $Zn$$^{0}_{Ga 1}$ acceptors. Furthermore, the $Zn$$^{0}_{Ga 2}$ acceptors decay in the 240–260 K region with a thermal activation energy near 0.65 eV, similar to $Mg$$^{0}_{Ga 2}$ acceptors, whereas the slightly deeper $Zn$$^{0}_{Ga 1}$ acceptors decay close to room temperature with an approximate thermal activation energy of 0.78 eV.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Unraveling the transformation pathway of the 𝛽 to 𝛾 phase transition in Ga 2 ⁢O 3 from atomistic simulations

Defect spinel 𝛾−Ga 2 ⁢O 3 is the least stable polymorph of Ga 2 ⁢O 3 , so its frequent appearance as a structural defect within or on the surface of monoclinic 𝛽−Ga 2 ⁢O 3 remains a mystery. Through first-principles calculations, we explore potential pathways for the phase transition from 𝛽−Ga 2⁢ O 3 to 𝛾−Ga 2 ⁢O 3 , and examine two key driving forces: tensile strain and Ga deficiency. When configurational entropy contributions to phase energies are included, the 𝛾 phase becomes energetically competitive with the 𝛽 phase, with the free energy difference between these phases diminishing even further under Ga-deficient conditions. Notably, a stability crossover occurs at room temperature at high vacancy concentrations ([V$^{3−}_{Ga}$]>3%) . A simple model 𝛽 → 𝛾 transformation pathway is identified, comprising two primary reactions, that enables the formation of the 𝛾 phase via simultaneous migration of Ga atoms from tetrahedral lattice sites to octahedral interstitial positions. The transformation barriers are prohibitively large in pristine Ga 2 ⁢O 3 , but can be substantially reduced by: (1) the presence of Ga vacancies, (2) elongational strains along the crystallographic 𝑎-axis, and (3) when volumetric relaxations are possible during transformation. These results elucidate prior experimental observations, where 𝛾−Ga 2⁢ O 3 is seen on damaged surfaces or in highly 𝑛-type 𝛽−Ga 2⁢ O 3 environments, which support Ga deficiency and mechanical strain. The insights into the driving forces and mechanisms of 𝛾−Ga 2⁢ O 3 formation enhance understanding of how localized strain and nonequilibrium defect concentrations may facilitate its formation from the 𝛽 phase.

Defects↗
DOE OSTI2020

Ga speciation in Ga/H-ZSM-5 by in-situ transmission FTIR spectroscopy

H-ZSM-5 supported Ga (Ga/H-ZSM-5) has long been recognized as a promising catalyst for nonoxidative dehydrogenation and dehydroaromatization of alkanes. However, Ga speciation under reaction conditions remains controversial. In this work, in-situ transmission Fourier Transform infrared (FTIR) spectroscopy is employed to systematically investigate Ga speciation in Ga/H-ZSM-5 with three Si/Al ratios (15, 28 and 39) and a wide range of Ga/Al ratios (0–1.7). Quantitative FTIR spectroscopy with pyridine reveals that one Ga atom roughly replaces one Brønsted acid site (BAS) at Ga/BAS ratio up to 0.7, however, only up to ~80% of the BAS on the H-ZSM-5 can be exchanged even with excess amounts of Ga. At a low Si/Al ratio of 15, the intensity of GaH x bands on reduced Ga/H-ZSM-5 at 550 °C increases almost linearly at low Ga loadings (Ga/Al < 0.13), and then levels off. In contrast, no detectable GaH x bands are observed on Ga/H-ZSM-5 with a high Si/Al ratio of 39, with Ga/Al ratios up to 1.3. The dependence of GaH x bands on both the Si/Al ratios and the Ga/Al ratios shows that Ga speciation varies with BAS density in the zeolite. We hypothesize that paired BAS sites are preferentially exchanged with Ga + , leading to the formation of Ga + –H + pair sites, while the exchange of isolated BAS form isolated Ga+ species. Using water as a probe molecule, we show that isolated Ga + and Ga + –H + pair sites have distinct properties, i.e., the former can be easily oxidized by water at 150 °C to form GaOOH species, while the latter is inactive under the same conditions. Furthermore, these results provide direct experimental evidence for the existence of two types of Ga species on reduced Ga/H-ZSM-5, highlighting the possibility that they have different catalytic activities in alkane dehydrogenation reactions.

03 NATURAL GAS↗
DOE OSTI2020

Temperature-induced structural evolution in liquid Ag-Ga alloys

Temperature-dependent atomic structural evolutions of liquid Ag 60 Ga 40 and Ag 70 Ga 30 alloys have been studied by in situ high-energy x-ray-diffraction (HEXRD) experiments combined with ab initio molecular-dynamics simulations. The experimental data show a reversible structural crossover at about 1050 ~ 1100 (± 50) K in both liquid Ag 60 Ga 40 and Ag 70 Ga 30 alloys. Obvious changes of the electrical resistivity, absolute thermoelectric power, and atomic diffusivity around the similar temperature range for both Ag-Ga liquids strongly support the HEXRD results. The origin of the liquid-to-liquid crossover in both Ag-Ga liquids was suggested to link with the rearrangements of Ag and Ga atoms, i.e., Ag and Ga atoms prefer to associate with themselves in the higher temperature range above 1100 K, consistent with the accelerated increase of the strong covalently bonded Ga–Ga dimers in both Ag-Ga liquids. In addition, more studies from the energy aspect are still desirable to understand the rearrangements of Ag and Ga atoms in the higher temperature range in both Ag-Ga liquids.

36 MATERIALS SCIENCE↗