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DOE OSTI2024

Nuclear charge radii of germanium isotopes around N = 40

Collinear laser spectroscopy measurements were performed on 68−74 Ge isotopes (Z=32) at ISOLDE-CERN, by probing the 4s 2 4p 2 3 P 1 → 4s 2 4p5s 3 P$^{o}_{1}$ atomic transition (269~nm) of germanium. Nuclear charge radii are determined via the measured isotope shifts, revealing a larger local variation than the neighboring isotopic chains. Nuclear density functional theory with the Fayans functionals Fy(Δr,HFB) and Fy(IVP), and the SV-min Skyrme describes the experimental data for the differential charge radii δ⟨r 2 ⟩ and charge radii R c within the theoretical uncertainties. The observed large variation in the charge radii of germanium isotopes is better accounted for by theoretical models incorporating ground state quadrupole correlations. This suggests that the polarization effects due to pairing and deformation contribute to the observed large odd-even staggering in the charge radii of the Ge isotopic chain.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2025

Formation of distinctive nanostructured metastable polymorphs mediated by kinetic transition pathways in germanium

High-pressure β -Sn germanium may transform into diverse metastable allotropes with distinctive nanostructures and unique physical properties via multiple pathways under decompression. However, the mechanism and transition kinetics remain poorly understood. Here, we investigate the formation of metastable phases and nanostructures in germanium via controllable transition pathways of β -Sn Ge under rapid decompression at different rates. High-resolution transmission electron microscopy reveals three distinct metastable phases with the distinctive nanostructures: an almost perfect st12 Ge crystal, nanosized bc8/r8 structures with amorphous boundaries, and amorphous Ge with nanosized clusters (0.8–2.5 nm). Fast in situ x-ray diffraction and x-ray absorption measurements indicate that these nanostructured products form in certain pressure regions via distinct kinetic pathways and are strongly correlated with nucleation rates and electronic transitions mediated by compression rate, temperature, and stress. This work provides deep insight into the controllable synthesis of metastable materials with unique crystal symmetries and nanostructures for potential applications.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Evidence of Coherent Elastic Neutrino-Nucleus Scattering with COHERENT’s Germanium Array

We report the first detection of coherent elastic neutrino-nucleus scattering (CEvNS) on natural germanium, measured at the Spallation Neutron Source at Oak Ridge National Laboratory. The Ge-Mini detector of the COHERENT collaboration employs large-mass, low-noise, high-purity germanium spectrometers, enabling excellent energy resolution, and an analysis threshold of 1.5 keV electron-equivalent ionization energy. We observe an on-beam excess of 20.6$^{+7.1}_{−6.3}$ counts with a total exposure of 10.22 GWhkg, and we reject the no-CEvNS hypothesis with 3.9⁢𝜎 significance. The result agrees with the predicted standard model of particle physics signal rate within 2⁢𝜎.

Electroweak interaction↗

NASA NTRS1968

Hydrogen peroxide etching proves useful for germanium

Influence of process variations in the etching of germanium with hydrogen peroxide has been studied, along with damage effects due to radiation. The work advances the knowledge of the etching process for germanium.

Dayal, Y.↗

NASA NTRS1973

High temperature material interactions of thermoelectric systems using silicon germanium.

The efficient use of silicon germanium thermoelectric material for radioisotope thermoelectric generators (RTG) is achieved by operation at relatively high temperatures. The insulation technique which is most appropriate for this application uses multiple layers of molybdenum foil and astroquartz. Even so, the long term operation of these materials at elevated temperatures can cause material interaction to occur within the system. To investigate these material interactions, the Jet Propulsion Laboratory is currently testing a number of thermoelectric modules which use four silicon germanium thermoelectric couples in conjunction with the multifoil thermal insulation. The paper discusses the results of the ongoing four-couple module test program and correlates test results with those of a basic material test program.

Stapfer, G.↗

NASA NTRS1976

Germanium-overcoated niobium Dayem bridges

Overcoating constriction microbridges with semiconducting germanium provides additional thermal conductivity at liquid-helium temperatures to reduce the effects of self-heating in these Josephson junctions. Microwave-induced steps were observed in the I-V characteristics of an overcoated Dayem bridge fabricated in a 15-nm-thick niobium film; at least 20 steps could be counted at 4.2 K. No steps were observed in the I-V characteristics of the bridge prior to overcoating. In addition, the germanium overcoat can protect against electrical disturbances at room temperature.

Holdeman, L. B.↗

NASA NTRS1978

Radiation damage of germanium detectors

Energetic particles can produce interstitial-vacancy pairs in a crystal by knocking the atoms from their normal positions. Detectors are unique among semiconductor devices in depending on very low concentrations of electrically active impurities, and also on efficient transport of holes and electrons over relatively large distances. Because the dense regions of damage produced by energetic particles may result in donors and/or acceptors, and also provide trapping sites for holes and electrons, detectors are very sensitive to radiation damage. In addition to these effects occurring within the detector, radiation may also change the characteristics of the exposed surfaces causing unpredictable effects on the detector leakage current. Radiation-induced surface degradation has rarely, if ever, been observed for germanium detectors. The possibility of minimizing hole trapping in charge collection by the use of a high-purity germanium coaxial detector configured with the p (+) contact on the coaxial periphery is discussed.

Pehl, R. H.↗

NASA NTRS1983

Chemical Vapor Deposition of Germanium of Silicon

Experimental work shows chemical vapor deposition (CVD) by pyrolysis of gaseous germanium tetrahydride provides epitaxial layers of germanium on silicon. Relatively low temperature of CVD process (500 degrees to 900 degrees C) reduces stresses that occur at layer/substrate interface during growth and cooling.

Aharoni, H.↗

NASA NTRS1982

Quantitative determination of zero-gravity effects on electronic materials processing germanium crystal growth with simultaneous interface demarcation experiment MA-060, section 5

The crystal growth and segregation characteristics of a melt in a directional solidification configuration under near zero g conditions were investigated. The germanium (doped with gallium) system was selected because it was extensively studied on Earth and because it lends itself to a very detailed macroscopic and microscopic characterization. An extensive study was performed of the germanium crystals grown during the Apollo-Soyuz Test Project mission. It was found that single crystal growth was achieved and that the interface demarcation functioned successfully. On the basis of the results obtained to date, there is no indication that convection driven by thermal or surface tension gradients was present in the melt. The gallium segregation, in the absence of gravity, was found to be fundamentally different in its initial and its subsequent stages from that of the ground based tests. None of the existing theoretical models for growth and segregation can account for the observed segregation behavior in the absence of gravity.

Gatos, H. C.↗

NASA NTRS1982

Measurement of the dispersive and refractive indices of germanium using diode lasers

Germanium Fabry-Perot etalons are commonly used in diode laser spectroscopy to establish relative frequency calibration scales for molecular absorption spectra. Typically the channel spectrum of the etalon is recorded simultaneously with the molecular spectrum as the laser injection current is tuned linearly, and the etalon free spectral range (fringe spacing) is used to measure the frequency separations among lines in the molecular spectrum. For this purpose, the etalon free spectral range must be known for the measurement wavelength, and this in turn relies on knowledge of the etalon length and the dispersive index at this wavelength. It is pointed out that the most satisfactory approach is to measure directly the free spectral range or dispersive index of the etalon at the wavelength of interest. A description is presented of measurements of this type, performed near 7.9 and 10.1 micrometers for a 7.7-cm long germanium etalon.

Jennings, D. E.↗

NASA NTRS1983

Development of a segmented n-type germanium detector, and its application to astronomical gamma-ray spectroscopy

Extensive calculations and simulations have shown that the instrumental background in a coaxial germanium photon detector flown at balloon altitudes or in space, can be substantially reduced by segmenting the outer contact. The contact is divided into horizontal strips around the side of the detector, giving it many characteristics similar to that of a stack of planar detectors. By choosing different segment coincidence requirements in different energy ranges, one can obtain a factor of approx. 2 increase in sensitivity to spectral lines between 40 keV and 1 MeV, compared with an unsegmented detector. The reverse electrode configuration (using n-type germanium), with the p contact outside, is preferred for this application due to its thin dead layer and resistance to radiation damage in space. A small two segment n type detector is being developed to serve as a prototype for larger multisegment devices. Results of this development effort and of detector tests are presented.

Gehrels, N.↗

NASA NTRS1983

Neutron-transmutation-doped germanium bolometers

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

Palaio, N. P.↗

NASA NTRS1984

The development of a segmented N-type germanium detector, and its application to astronomical gamma-ray spectroscopy

Gehrels, N.↗

NASA NTRS1985

Extension of long wavelength response by modulation doping in extrinsic germanium infrared detectors

A new concept for infrared detectors based on multilayer epitaxy and modulation doping has been investigated. This permits a high doping concentration and lower excitation energy in the photodetecting layer as is necessary for longer wavelength response, without incurring the detrimental effects of increased dark current and noise as would be the case with conventional detector designs. Germanium photodetectors using conventional materials and designs have a long wavelength cutoff in the infrared at 138 microns, which can only be extended through the inconvenient application of mechanical stress or magnetic fields. As a result of this approach which was arrived at from theoretical considerations and subsequently demonstrated experimentally, the long wavelength cutoff for germanium extrinsic detectors was extended beyond 200 microns, as determined by direct infrared optical measurements.

Hadek, V.↗

NASA NTRS1986

Microstructures of niobium-germanium alloys processed in inert gas in the 100 meter drop tube

The 100 meter drop tube at NASA's Marshall Space Flight Center has been used for a series of experiments with niobium-germanium alloys. These experiments were conducted with electromagnetic levitation melting in a 200 torr helium environment. Liquid alloys experienced large degrees of undercooling prior to solidification in the drop tube. Several interesting metastable structures were observed. However, the recalescence event prevented extended solid solubility of germanium in the A-15 beta phase. Liquids of eutectic composition were found to undercool in the presence of solid alpha and solid Nb5Ge3.

Bayuzick, R. J.↗

NASA NTRS1991

Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

Johnson, Gregory A.↗

NASA NTRS1992

Variable-Temperature Cryostat For Radiation-Damage Testing Of Germanium Detectors

Variable-temperature cryostats developed to study radiation damage to, and annealing of, germanium gamma-ray detectors. Two styles: one accommodates large single detector and one accommodates two medium-sized detectors. New cryostats allow complete testing of large-volume germanium gamma-ray detectors without breaking cryostat vacuum and removing detectors for annealing.

Floyd, Samuel R.↗

NASA NTRS1993

Germanium Resistance Thermometer For Subkelvin Temperatures

Improved germanium resistance thermometer measures temperatures as small as 0.01 K accurately. Design provides large area for electrical connections (to reduce electrical gradients and increase sensitivity to changes in temperatures) and large heat sink (to minimize resistance heating). Gold pads on top and bottom of germanium crystal distribute electrical current and flow of heat nearly uniformly across crystal. Less expensive than magnetic thermometers or superconducting quantum interference devices (SQUID's) otherwise used.

Castles, Stephen H.↗