Fermi-Thomas response of a metal surface to an external point charge.
Dielectric response of semiinfinite metal surface to external point charge in linearized Fermi- Thomas approximation, discussing potential in metal and vacuum
Newns, D. M.↗
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Results for “Fermi surface”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The fermi acceleration of charged particles in the transition region beyond the magnetosphere
Fermi acceleration of charged particles in transition region
FERMI SURFACE↗
Thermal, field emission with a terminated image potential
Theory for thermal field emission with image potential terminated at Fermi level
IMAGE↗
Magnetic breakdown - Effective Hamiltonian and de Haas-van Alphen effect.
Magnetic breakdown on usual effective Hamiltonian theory for Bloch electrons in magnetic field, using simple two-dimensional rectangular model
SOLID STATE PHYSICS↗
Indirect exchange interaction in the rare-earth metals.
Exact calculation of indirect exchange interaction isotropic and nonisotropic terms in rare earth metals, with free electron model for conduction band
CONDUCTION BAND↗
Fermi-Compton scattering due to magnetopause surface fluctuations in Jupiter's magnetospheric cavity
The effects of boundary surface fluctuations on a spectrum of electromagnetic radiation trapped in a high Q (quality) cavity are considered. Undulating walls introduce small frequency shifts at reflection to the radiation, and it is argued that the process is entirely analogous to both Fermi (particle) acceleration and inverse Compton scattering. A Fokker-Planck formalism is pursued; it yields a diffusion equation in frequency for which the Green's function and steady-state solutions are found. Applying this analysis to the Jovian continuum radiation discovered by Voyager spacecraft, it is suggested that characteristic diffusion times are greater than 1 year, and that in order to account for the steep frequency spectra observed, an unidentified loss mechanism must operate in the cavity with a decay time constant approximately equal to the characteristic diffusion time divided by 28. A radiator-reactor model of the cavity is investigated to provide an estimate for the intrinsic luminosity of the low frequency (approximately 100 Hz) continuum source whose power is approximately 7 x 10 to the 6th W.
Barbosa, D. D.↗
Surface photovoltage spectroscopy applied to gallium arsenide surfaces
The experimental and theoretical basis for surface photovoltage spectroscopy is outlined. Results of this technique applied to gallium arsenide surfaces, are reviewed and discussed. The results suggest that in gallium arsenide the surface voltage may be due to deep bulk impurity acceptor states that are pinned at the Fermi level at the surface. Establishment of the validity of this model will indicate the direction to proceed to increase the efficiency of gallium arsenide solar cells.
Bynik, C. E.↗
Electronic structure Fermi liquid theory of high T(sub c) superconductors: Comparison with experiments
For years, there has been controversy on whether the normal state of the Cu-oxide superconductors is a Fermi liquid or some other exotic ground state. However, some experimentalists are clarifying the nature of the normal state of the high T(sub c) superconductors by surmounting the experimental difficulties in producing clean, well characterized surfaces so as to obtain meaningful high resolved photoemission data, which agrees with earlier positron-annihilation experiments. The experimental work on high resolution angle resolved photoemission by Campuzano et al. and positron-annihilation studies by Smedskjaer et al. has verified the calculated Fermi surfaces in YBa2Cu3O7 superconductors and has provided evidence for the validity of the energy band approach. Similar good agreement was found for Bi2Sr2CaCu2O8 by Olson et al. As a Fermi liquid (metallic) nature of the normal state of the high T(sub c) superconductors becomes evident, these experimental observations have served to confirm the predictions of the local density functional calculations and hence the energy band approach as a valid natural starting point for further studies of their superconductivity.
Freeman, A. J.↗
The effect of CO chemisorption on the metal surface CO/Ni(100)
The chemisorption of CO on Ni(100) is studied with a cluster model. The calculations suggest that chemisorption changes the nature of the Ni 3d orbitals. The open shell Ni 3d accepts charge from the Ni valence 4s4p orbitals, reducing the open shell 3d character on the Ni. The closed shell Ni 3d orbitals also mix with the Ni valence 4s4p orbitals and donate charge to the CO; thus helping to maintain the Ni 3d population near 9. These changes should affect the density of 3d states near the Fermi level and the surface magnetic moment. The variation in the bonding with the size of cluster is also discussed.
Bauschlicher, Charles, W., jr.↗
Relativistic effects in local inertial frames
The concept of a generalized Fermi frame is introduced with the aim of describing the relativistic effects due to a third, distant body (such as the sun) upon the motion of an earth satellite. This extends Fermi's construction of a local inertial frame to the case in which there are local gravitating masses. This is done in the slow-motion, weak-field approximation by splitting the metric into an external part and a local part; Fermi's construction of local inertial coordinates defined with respect to the external metric is then used to transform the complete metric. The results show that the main relativistic effects on an earth satellite are due to the nonlinear correction in the earth's own Schwarzschild field. There are much smaller relativistic corrections in the tidal field of the sun, and an earth-sun interaction term. The spatial axes of the local frame also undergo geodetic precession. Particular care must be taken with respect to the definition of the time coordinate in the generalized Fermi frame in order that the unit of time be consistent with readings of reasonable physical clocks on earth's surface. Also discussed more rigorously is the generalized Fermi frame for a system of two bodies revolving in circular orbits around a common barycenter.
Ashby, Neil↗
Fast Fermi and gradient drift acceleration of electrons at nearly perpendicular collisionless shocks
Electrons can be reflected and effectively energized at quasi-perpendicular shocks. At a curved shock this process is most prominent where the upstream magnetic field and the shock surface are tangent. A theoretical explanation of the underlying physical mechanism in terms of fast Fermi acceleration has been proposed in the literature. The theory uses properties of the de Hoffmann-Teller frame and assumes conservation of magnetic moment in a static, simplified shock profile. Here, the discussion is extended in order to clarify certain aspects of the reflection process and to pinpoint the physical mechanisms that are operative and dominant from the viewpoint of the normal incidence frame. By reducing the analysis to the essential physical content and solving the pertinent energy equation, the equivalence of fast Fermi and gradient drift acceleration is shown.
Krauss-Varban, D.↗
Studies of silicon p-n junction solar cells
To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.
Neugroschel, A.↗
Doping Scheme in Atomic Chain Electronics
Due to the dramatic reduction in MOS size, there appear many unwanted effects. In these small devices, the number of dopant atoms in the channel is not macroscopic and electrons may suffer significantly different scattering from device to device since the spatial distribution of dopant atoms is no longer regarded as continuous. This prohibits integration, while it is impossible to control such dopant positions within atomic scale. A fundamental solution is to create electronics with simple but atomically precise structures, which could be fabricated with recent atom manipulation technology. All the constituent atoms are placed as planned, and then the device characteristics are deviation-free, which is mandatory for integration. Atomic chain electronics belongs to this category. Foreign atom chains or arrays form devices, and they are placed on the atomically flat substrate surface. We can design the band structure and the resultant Fermi energy of these structures by manipulating the lattice constant. Using the tight-binding theory with universal parameters, it has been predicted that isolated Si chains and arrays are metallic, Mg chains are insulating, and Mg arrays have metallic and insulating phases [1]. The transport properties along a metallic chain have been studied, emphasizing the role of the contact to electrodes [2]. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along die chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of pant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.
Toshishige, Yamada↗
Surface structure of neutron stars with high magnetic fields
The equation of state of cold dense matter in strong magnetic fields is calculated in the Thomas-Fermi and Thomas-Fermi-Dirac approximations. For use in the latter calculation, a new expression is derived for the exchange energy of the uniform electron gas in a strong magnetic field. Detailed calculations of the density profile in the surface region of a neutron star are described for a variety of equations of state, and these show that the surface density profile is strongly affected by the magnetic field, irrespective of whether or not matter in a magnetic field has a condensed state bound with respect to isolated atoms. It is also shown that, as a consequence of the field dependence of the screening potential, magnetic fields can significantly increase nuclear reaction rates.
Fushiki, I.↗
Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistors
The paper presents an analytical treatment of transparent-emitter devices, particularly solar cells, that is more complete than previously available treatments. The proposed approach includes the effects of bandgap narrowing, Fermi-Dirac statistics, built-in field due to impurity profile, and a finite surface recombination velocity at the emitter surface. It is demonstrated that the transparent-emitter model can predict experimental values of Voc observed on n(plus)-p thin diffused junction silicon solar cells made on low-resistivity (0.1 ohm-cm) substrates. A test is included for the self-consistent validity of the transparent-emitter model. This test compares the calculated transit time of minority carriers across the emitter with the Auger-impact minority-carrier lifetime within the emitter region.
Shibib, M. A.↗
FERMI Observations of Gamma -Ray Emission From the Moon
We report on the detection of high-energy γ -ray emission from the Moon during the first 24 months of observations by the Fermi Large Area Telescope (LAT). This emission comes from particle cascades produced by cosmicray (CR) nuclei and electrons interacting with the lunar surface. The differential spectrum of the Moon is soft and can be described as a log-parabolic function with an effective cutoff at 2-3 GeV, while the average integral flux measured with the LAT from the beginning of observations in 2008 August to the end of 2010 August is F(greater than100 MeV) = (1.04 plus or minus 0.01 [statistical error] plus or minus 0.1 [systematic error]) × 10(sup −6) cm(sup −2) s(sup −1). This flux is about a factor 2-3 higher than that observed between 1991 and 1994 by the EGRET experiment on board the Compton Gamma Ray Observatory, F(greater than100 MeV)≈5×10(sup −7) cm(sup −2) s(sup −1), when solar activity was relatively high. The higher gamma -ray flux measured by Fermi is consistent with the deep solar minimum conditions during the first 24 months of the mission, which reduced effects of heliospheric modulation, and thus increased the heliospheric flux of Galactic CRs. A detailed comparison of the light curve with McMurdo Neutron Monitor rates suggests a correlation of the trends. The Moon and the Sun are so far the only known bright emitters of gamma-rays with fast celestial motion. Their paths across the sky are projected onto the Galactic center and high Galactic latitudes as well as onto other areas crowded with high-energy gamma-ray sources. Analysis of the lunar and solar emission may thus be important for studies of weak and transient sources near the ecliptic.
fermi↗
Double-injection, deep-impurity switch development
The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.
Selim, F. A.↗
X-ray photoelectron spectroscopy study of chemically-etched Nd-Ce-Cu-O surfaces
Acetic acid, Br2, and HCl solutions are investigated for removing insulating species from Nd(1.85)Ce(0.15)CuO(4-delta) (NCCO) thin film surfaces. X-ray photoelectron spectroscopy (XPS) shows that the HCl etch is most effective, yielding O 1s spectra comparable to those obtained from samples cleaned in vacuum and a clear Fermi edge in the valence band region. Reduction and oxidation reversibly induces and eliminates, respectively, Fermi level states for undoped samples, but has no clearly observable effect on the XPS spectra for doped samples. Reactivity to air is much less for NCCO compared to hole superconductors, which is attributed to the lack of reactive alkaline earth elements in NCCO.
Vasquez, R. P.↗