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All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Data for: Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001)

Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide, provided an important step towards integration of the graphene-based system into active components in post-silicon micro- and nano-electronics. However, the exact atomic-scale structure and the complex bonding configurations of the first epitaxial graphene carbon layer remain an open problem. Our recent report has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the Cbuffer-SiC bonds was observed. Here, using scanning tunneling microscopy and spectroscopy (STM and STS), we present the direct evidence of silicon (Si) vacancies at the interface and provide their distribution at the topmost reconstructed SiC(0001) layer. Experimental STM and density functional theory modeling data were used in the preparation of figures in a published article in the Journal of Physical Chemistry Letters. Files related to the figures and supplementary materials in the article are present in this dataset in .txt format.

Condensed matter imaging↗
NASA NTRS1987

Improving the method of calculating electronic properties of narrow bandgap semiconductors

A previously developed code for calculating the mobility of charge carriers in narrow bandgap semiconductors does not predict the correct temperature dependence in all cases. It is thought that this is due to the way the electronic screening of the carriers is treated in the model. The objective of this research is to improve the handling of the screening by going beyond the current first Born approximation. Much of this work is directly related to the alloy semiconductor Hg sub 1-xCd sub xTe which is important for infrared detectors and is a good candidate for microgravity crystal growth. The principal conclusion, so far, is that the major difficulty is probably the treatment of short range screening at higher temperatures.

Patterson, James D.↗
DOE OSTI2025

Structural, magnetic, optical, dielectric and electronic properties of R 2 NiIrO 6 (R = Pr and Nd): A comprehensive experimental and theoretical investigation

Double perovskites are highly promising materials capable of exhibiting a wide variety of phenomena. In this work, we perform a comprehensive experimental and theoretical study of polycrystalline R 2 NiIrO 6 (R = Pr and Nd) compounds. Both compounds were synthesised using the solid-state reaction method. Rietveld refinement confirmed a monoclinic structure with the P2 1 /n space group for both compounds. The scanning electron images showed the average grain sizes of 0.55 μm for R = Pr and 0.46 μm for R = Nd. Fourier transform infrared ra- diation spectra of the two compounds presented two intense bands at 470 cm -1 and 540 cm -1 . The optical measurements revealed that the band gaps of the compounds were in the visible absorption range. The field- cooled magnetisation - field hysteresis measurements indicated exchange bias properties in the synthesised compounds at low temperatures. Both temperature and frequency variation of dielectric constant and loss tangent measurements were conducted. The frequency-dependent ac conductivity measurements indicated that the conductivity increases with the increase of frequency as well as temperature. The Nd 2 NiIrO 6 compound showed lower ac conductivities compared to its isostructural Pr 2 NiIrO 6 compound. The atomic and electronic structures of Nd 2 NiIrO 6 and Pr 2 NiIrO 6 were explored using the spin-polarised calculations performed within the DFT+U method. Our results suggested that the inclusion of on-site correlations and repulsions for the d-states of atoms was necessary in order to obtain finite band gaps of Nd 2 NiIrO 6 and Pr 2 NiIrO 6 systems.

36 MATERIALS SCIENCE↗
NASA NTRS1975

Surface structure and electronic properties of materials

A surface potential model is developed to explain dopant effects on chemical vapor deposition. Auger analysis of the interaction between allotropic forms of carbon and silicon films has shown Si-C formation for all forms by glassy carbon. LEED intensity measurements have been used to determine the mean square displacement of surface atoms of silicon single crystals, and electron loss spectroscopy has shown the effect of structure and impurities on surface states located within the band gap. A thin film of Al has been used to enhance film crystallinity at low temperature.

Siekhaus, W. J.↗
DOE OSTI2025

Electronic properties of ThC − and ThC

The present study investigates the properties of low-lying states of ThC − and ThC using correlated wave function theories. To this end, we employed multireference calculations and various coupled-cluster approaches in combination with large correlation-consistent basis sets. These methods were applied to examine potential energy curves (PECs), electron configurations, energetics, spectroscopic constants, and spin–orbit coupling effects for 9 states of ThC − and 18 states of ThC. The ground states of ThC − and ThC were identified as single-reference 2 Σ + 1/2 (I) and $^3Σ^+_{0^-} (\textrm{I})$, respectively. Electron detachment from the 7s orbital of the Th center in ThC − [ 2 Σ + (I); 1σ 2 2σ1 3 σ2 1 π 4 ] yields ThC [ 3 Σ + (I); 1σ 2 2σ 1 3σ 1 1π 4 ]. The calculated adiabatic detachment energy (ADE) and vertical detachment energy (VDE) for this process are 1.591 and 1.604 eV, respectively. Furthermore, the dissociation energy (D 0 ) of ThC [$^3Σ^+_{0^-} (\textrm{I})$] is predicted to be 5.099 eV. The standard enthalpy of formation, $ΔH^{°}_{\textrm{f}}$ (298 K), of ThC is estimated to be 822.52 ± 6 kJ mol −1 .

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2026

Role of Surface Termination in the Structural and Electronic Properties of Sc$_2$CT$_\textrm{x}$ MXene

Graphene-like layered transition metal carbides, nitrides, or carbonitrides, called MXenes, obey the stoichiometric formula of M n+1 X n T x , where M is an early transition metal such as scandium (Sc), n is a natural number, X is C, N, or CN, and T x is a functional group such as –O, –F, or –OH that passivates the surface of the MXene. The electronic structure of bare Sc 2 C and functionalized Sc 2 CT x MXenes are explored by performing first-principles density functional theory (DFT) calculations. The bare Sc 2 C is metallic, but less stable than its passivated structure. The Sc 2 C MXene has an interlayer 2D electron gas not bound to Sc or C atoms but free to move, making it an electride. DFT calculations show that functionalization can open an energy gap in Sc 2 CT x MXenes. The size and type (direct versus indirect) of the bandgap vary with the functional groups, which provides a means for opening and tuning of the band gap.

DFT↗
NASA NTRS1989

Analysis of suprathermal electron properties at the magnetic pile-up boundary of Comet P/Halley

Among the plasma discontinuities detected by the Giotto spacecraft around Comet P/Halley, the magnetic pile-up boundary, located at about 135,000 km from the nucleus, has a sharpness which was not foreseen by theoretical models. At this boundary, which marks the beginning of the region where the field lines draped around the nucleus have been piled up, the magnetic field jumps sharply. Electron measurements provided by the RPA experiment show that a clear plasma discontinuity coincides with this magnetic feature. Significant changes occur here in the suprathermal electron distribution function. A magneto-plasma sheet is clearly defined after the boundary. Inside this sheet, close correlations exist between the parameters describing the magnetic field and the electron population. The polytropic equation of state governing the suprathermal electrons in the sheet has been deduced from RPA measurements. Some implications of this law are discussed.

Mazelle, C.↗
NASA NTRS1998

Substrate Effects on Electronic Properties of Atomic Chains

When the device size is reduced down to 0.07 micrometers, the number of dopant atoms in the channel will no longer be macroscopic, typically less than a hundred. A spatial distribution of these dopant atoms will fluctuate statistically from device to device even in identically designed devices, and this places a serious limitation for integration. It is, however, impractical to control dopant positions within atomic dimension. One fundamental solution to this problem is to create electronics with atomically precise, but preferably simple structures. Atomic chains, precise structures of adatoms created on an atomically regulated surface, are candidates for constituent components in future electronics. All the adatoms will be placed at designated positions on the substrate, and all the device structures will be precise, free from any deviations. It was predicted using the tight-binding calculation with universal parameters that silicon chains were metallic and magnesium chains were semiconducting regardless of the lattice spacing, and a possible doping method was also proposed. In these treatments, the substrate was assumed to serve as a non-interacting template holding the adatoms without a formation of chemical bonding with substrate atoms. However, this scheme may not be easy to implement experimentally. Adatoms will have to be fixed with a van der Waals force on the substrate, but the force is generally weak and an extremely low temperature environment has to be prepared to suppress their unwanted thermal displacement. It may be logical to seek a scheme to allow the adatoms to form chemical bonding with the substrate atoms and secure their positions. The substrate effects are studied in detail.

Yamada, Toshishige↗
NASA NTRS1982

Microdistribution of oxygen in silicon and its effects on electronic properties

The effects of interstitial oxygen on the electrical characteristics of Czochralski-grown silicon crystals were investigated for the first time on a microscale. It was found that the generation of thermal donors is not a direct function of the oxygen concentration. It was further found that the minority carrier life-time decreases with increasing oxygen concentration, on a microscale in as-grown crystals. It was thus shown, again for the first time, that oxygen in as grown crystals is not electronically inert as generally believed. Preannealing at 1200 C commonly employed in device fabrication, was found to suppress the donor generation at 450 C and to decrease the deep level concentrations.

Gatos, H. C.↗
NASA NTRS1984

Optical and interfacial electronic properties of diamond-like carbon films

Hard, semitransparent carbon films were prepared on oriented polished crystal wafers of silicon, indium phosphide and gallium arsenide, as well as on KBr and quartz. Properties of the films were determined using IR and visible absorption spectrocopy, ellipsometry, conductance-capacitance spectroscopy and alpha particle-proton recoil spectroscopy. Preparation techniques include RF plasma decomposition of methane (and other hydrocarbons), ion beam sputtering, and dual-ion-beam sputter deposition. Optical energy band gaps as large as 2.7 eV and extinction coefficients lower than 0.1 at long wavelengths are found. Electronic state densities at the interface with silicon as low as 10 to the 10th states/eV sq cm per were found.

Woollam, J. A.↗
DOE OSTI2025

Tuning effect of vanadium substitution on the structural and electronic properties of potassium hollandite surfaces

Metal oxide surfaces possess unique properties that are crucial for a wide variety of applications. Herein, density functional theory calculations are performed to study surfaces of potassium hollandite, KMn 8 O 16 , a promising cathode material for electrochemical energy storage, and the vanadium-substituted analog KMn 7 VO 16 . The results show that there is a clear increase in the stability of KMn 8 O 16 with (001) < (110) < (100) or (010), apt to adopt an elongated rod-like morphology. The vanadium (V)-substitution lowers the crystal symmetry and prefers to occupy the surface sites, resulting in electron redistribution and selective tuning of surface energy depending on the surface structures. In particular, the higher stability of substituted V 4+ compared with Mn 4+ ions leads to stabilization of the (001) surface due to the direct interaction of reduced Mn δ+ ions on the surface, while such tuning effect decreases with the increase in surface stability, (110) > (100) and (010). As a result, the KMnO 16 rod is shortened upon V-substitution as observed experimentally, effectively facilitating the ion transport during discharge. The V substituents also introduce stabilization to the defect surfaces resulting from Mn 2+ dissolution during cycling, thereby hindering further structural decay. In conclusion, our study demonstrates the potential tuning effect of V-substitution to promote the ion transport and mitigate the capacity degradation of α-MnO 2 -based materials.

25 ENERGY STORAGE↗
NASA NTRS1995

Structural, dynamical and electronic properties of CaCuO2

The scalar relativistic version of an accurate first principles full potential self-consistent linearized muffin tin orbital (LMTO) method has been employed for describing the physical properties of the parent system of the high-T(sub c) oxide superconductors, i.e., CaCuO2. The presently employed modified version of the LMTO method is quite fast and goes beyond the usual LMTO ASA method in the sense that it permits a completely general shape of the potential and the charge density. Also, in contrast to LMTO ASA, the present method is also capable of treating distorted lattice structures accurately. The calculated values of the lattice parameters of pure CaCuO2 lie within 3% of the experimentally measured values for the Sr-doped system Ca(0.86)Sr(0.14)CuO(2). The computed electronic structures and the density of states is quite similar to those of the other oxide superconductors, except of their three- dimensional character because of the presence of strong coupling between the closely spaced CuO2 layers. The van Hove singularity peak appears slightly below the Fermi level and a small concentration of oxygenation /or/ substitutional doping may pin it at the Fermi level. The calculated frequencies for some symmetric frozen phonons for undoped CaCuO2 are quite near to the measured data for the Sr-doped CaCuO2.

Agrawal, Bal K.↗
DOE OSTI2025

Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001)

Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide (SiC) [Zhao, J. Nature 2024, 625 (7993), 60−65, 10.1038/s41586-023-06811-0] provided an important step toward integration of the graphene-based system into active components in postsilicon micro- and nanoelectronics. However, the exact atomic-scale structure and complex bonding configurations of the first epitaxial graphene carbon layer (C buffer ) remain an open problem. Our recent report [Kolmer, M. Communications Physics 2024, 7 (1), 16, 10.1038/s42005-023-01515-3] has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the C buffer –SiC bonds was observed. Here, using scanning tunneling microscopy and spectroscopy (STM and STS), we present direct evidence of silicon (Si) vacancies at the interface and provide their distribution at the topmost reconstructed SiC(0001) layer. Bias voltage and epitaxial graphene thickness-dependent characterization of the collective C buffer –SiC interface showed that “Si” vacancy sites beneath C buffer are stable under STM electric fields. Moreover, the vacancies introduce localized electronic states below the Fermi level, thereby enhancing the charge-transfer phenomenon across the interface.

Thupakula, Umamahesh [Ames Laboratory (AMES), Ames↗
DOE OSTI2025

Tuning of electronic properties in highly lattice-mismatched epitaxial SmN

Here, we establish the relationship between native N vacancies, introduced through varying growth parameters, and the structural and transport properties in SmN thin films grown via molecular beam epitaxy grown on MgO(001). The varying levels of N vacancies introduced by varying the ratio of Sm to N atoms during deposition creates excess carriers that radically transform the electrical behavior of the film, over a range of five orders of magnitude, from highly resistive to highly conductive, and unlocking a phase transition evidenced by the presence of a ferromagnetic feature in resistivity. X-ray photoelectron spectroscopy results show that this effect is much less pronounced when varying the available nitrogen species. These samples retain a highly crystal quality despite being grown on a substrate with a lattice mismatch of 20%, alleviating the strain by forming a highly strained SmO oxide layer. The integration between SmN and several transition metal nitride compounds has the potential to unlock new architectures for Josephson junction devices.

36 - MATERIALS SCIENCE↗
NASA NTRS1979

Electronic properties of PbMo6S8 and CuxMo6S8

Normal-state properties of sputtered, evaporated, and sintered PbMo6S8 and CuxMo6S8 (where x is between 1.6 and 2.5) samples are reported. These include the temperature dependence of resistivity, magnetoresistance, and Hall effect. When combined with superconducting properties (measured on the same samples) and theory, a number of Fermi-surface and superconducting parameters are derived. Fits to the temperature dependence of the resistivity are compared with similar fits for A-15 structure superconductors.

Woollam, J. A.↗