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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The unique physicochemical properties of non-Ti-MXenes make them excellent class of materials for flexible and wearable electronics.
Abstract Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga 2 O 3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.
The planned final assembly of the Galileo spacecraft propulsion system tubing, which involves welding in close proximity to sensitive electronics, raised significant concerns about the effects of electromagnetic coupling of weld energy on CMOS and other sensitive integrated circuits. A test program was established to assess the potential of an orbital arc welder and an RF-induction brazing machine to damage sensitive electronic equipment. Test parameters were varied to assess the effectiveness of typical transient suppression practices such as grounding, bonding, and shielding. A technique was developed to calibrate the hazard levels at the victim-circuit location; this technique is described along with the results and conclusions of the test program.
The scientific devices designed for each of the Outer Planets Program Focuses will likely be groundbreaking not only with respect to their scientific role but also regarding the electronics required to perform such investigations. In the past, the performance of packaged electronics was limited by the components themselves, with minimal influence of the packaging technology. The rapid development of integrated circuit technology, however, has drastically increased the importance of packaging technology in the ultimate performance of devices. If not carefully considered in the overall design, the packaging may become the limiting factor in the operation of the system. Although industry is responsible for several significant accomplishments in the field of electronics packaging, deep space/outer planet missions must take into account additional requirements such as extremely low temperatures, high radiation levels, hermetic sealing, and severe size and weight limitations. Therefore, the present investigation has been designed to meet the needs of NASA's sensor intensive outer planets program by combining (using flip chip technology) an array of devices (including analog, digital, power volt-age, passives, and MEMS) into a miniaturized heterogeneous system and utilizing optical buses to enable autonomy. Additional information is contained in the original extended abstract.
Systems and techniques for transmitting and processing an electrical signal through an opto-electronic system with an optical Brillouin amplifier.
The space environment requires robust sensing, control, and automation, whether in support of human spaceflight or of robotic exploration. Spaceflight embodies the known extremes of temperature, radiation, shock, vibration, and static loads, and demands high reliability at the lowest possible mass. Because printed electronic circuits fulfill all these requirements, printed circuit technology and the exploration of space have been closely coupled throughout their short histories. In this presentation, we will explore the space (and space launch) environments as drivers of printed circuit design, a brief history of NASA's use of printed electronic circuits, and we will examine future requirements for such circuits in our continued exploration of space.
As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young’s modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS 2 field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.
Program runtime/timing attacks exploit variations in a program’s execution times to extract sensitive information from the program (e.g. encryption keys, sensitive variable data, intellectual property). State-of-the-art solutions to runtime side-channel attacks attempt to balance the execution time of the sensitive code for different control flow paths to eliminate the timing leakage. However, during the mitigation process, most techniques do not consider the underlying hardware/device on which the target program is supposed to run on. This can lead to over-fixing (unnecessary extra operations), under-fixing (not solving the imbalance properly), and even failures. Here, we propose DISARM, a joint hardware-software methodology (unlike any existing solution) for mitigating runtime side-channel vulnerabilities that utilizes timing values from real embedded devices to generate targeted software fixes. We implement DISARM to support C/C++/Java source codes and validate it across 22 standard benchmarks. DISARM outperforms state-of-the-art solutions such as PENDULUM and DifFuzzaR in terms of execution time overhead, code size overhead, and correctness on five different embedded/edge devices.
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conference oral presentation
An oscillator circuit and a thermistor, in close proximity to a light bulb, periodically alter the heat output of the bulb by varying the voltage across its filament. Use of this simulator permits checkout tests on pneumographs.
Nonlinear theory of multistream devices - klystron, traveling wave tube, and backward wave oscillator
Threshold extension device connected between demodulator output and filter output minimizes clicking noise. Device consists of click-eliminating signal transfer channel with follow-and-hold circuit and detector for sensing click impulses. Final output consists of signal plus low level noise without high amplitude impulses.
The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made of the high dose neutron and gamma hardening potential of bipolar, metal insulator semiconductors and junction field effect transistors. Experimental data is presented on device degradation for the high neutron and gamma doses. Previous data and comparisons indicate that the JFET is much more immune to the combined neutron displacement and gamma ionizing effects than other transistor types. Experimental evidence is also presented which indicates that p channel MOS devices may be able to meet the requirements.
Electronic image amplification methods are used in variable star observations to increase significantly the volume of recorded information. Electronic cameras are the most efficient, while television cameras increase contrast of weak stars against the background of the sky.
The results obtained during a six month program aimed at determining the viability of space processing in the 1980's of dielectric-elastic-magnetic single crystals were described. The results of this program included: identification of some important emerging technologies dependent on dielectric-elastic-magnetic crystals, identification of the impact of intrinsic properties and defects in the single crystals on system performance, determination of a sensible common basis for the many crystals of this class, and identification of the benefits of micro-gravity and some initial experimental evidence that these benefits can be realized in space. It is concluded that advanced computers and optical communications are at a development stage for high demand of dielectric-elastic-magnetic single crystals in the mid-1980's. Their high unit cost and promise for significantly increased perfection by growth in space justified pursuit of space processing.