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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Electrical properties of thermal oxide scales on pure iron in liquid lead-bismuth eutectic

Here, the impedance behavior of pre-oxidized iron in liquid lead-bismuth eutectic (LBE) at 200 °C is studied using electrochemical impedance spectroscopy. The structures and resistance of oxide grown on iron oxidized in air at different temperatures and durations are compared. The results show that the resistance of the oxide film increases with increasing oxidizing temperature, due to the formation of a thicker scale and fewer defects. At the same temperature (600 °C), increasing the oxidation time can also reduce the defect concentration in the oxide film and improve the impedance of the oxide scale in LBE.

42 ENGINEERING↗
DOE OSTI2022

Nanotubes from the Misfit Layered Compound (SmS) 1.19 TaS 2 : Atomic Structure, Charge Transfer, and Electrical Properties

Misfit layered compounds (MLCs) MX-TX 2 , where M, T = metal atoms and X = S, Se, or Te, and their nanotubes are of significant interest due to their rich chemistry and unique quasi-1D structure. In particular, LnX-TX 2 (Ln = rare-earth atom) constitute a relatively large family of MLCs, from which nanotubes have been synthesized. The properties of MLCs can be tuned by the chemical and structural interplay between LnX and TX 2 sublayers and alloying of each of the Ln, T, and X elements. In order to engineer them to gain desirable performance, a detailed understanding of their complex structure is indispensable. MLC nanotubes are a relative newcomer and offer new opportunities. In particular, like WS 2 nanotubes before, the confinement of the free carriers in these quasi-1D nanostructures and their chiral nature offer intriguing physical behavior. High-resolution transmission electron microscopy in conjunction with a focused ion beam are engaged to study SmS-TaS 2 nanotubes and their cross-sections at the atomic scale. The atomic resolution images distinctly reveal that Ta is in trigonal prismatic coordination with S atoms in a hexagonal structure. Furthermore, the position of the sulfur atoms in both the SmS and the TaS 2 sublattices is revealed. X-ray photoelectron spectroscopy, electron energy loss spectroscopy, and X-ray absorption spectroscopy are carried out. These analyses conclude that charge transfer from the Sm to the Ta atoms leads to filling of the Ta 5d z 2 level, which is confirmed by density functional theory (DFT) calculations. Transport measurements show that the nanotubes are semimetallic with resistivities in the range of 10 –4 Ω·cm at room temperature, and magnetic susceptibility measurements show a superconducting transition at 4 K.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides

Abstract Like in any other semiconductor, point defects in transition-metal dichalcogenides (TMDs) are expected to strongly impact their electronic and optical properties. However, identifying defects in these layered two-dimensional materials has been quite challenging with controversial conclusions despite the extensive literature in the past decade. Using first-principles calculations, we revisit the role of chalcogen vacancies and hydrogen impurity in bulk TMDs, reporting formation energies and thermodynamic and optical transition levels. We show that the S vacancy can explain recently observed cathodoluminescence spectra of MoS 2 flakes and predict similar optical levels in the other TMDs. In the case of the H impurity, we find it more stable sitting on an interstitial site in the Mo plane, acting as a shallow donor, and possibly explaining the often observed n-type conductivity in some TMDs. We also predict the frequencies of the local vibration modes for the H impurity, aiding its identification through Raman or infrared spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effect of organic electroactive crystallites in a dielectric matrix on the electrical properties of a polymer dielectric

In this work, the effects of inserting chargeable α-quaterthiophene (α4T) crystallites in polystyrene (PS) multilayers used as a transistor gate and capacitor dielectric were investigated. X-ray diffraction (XRD), scanning electron microscopy with energy dispersive x-ray spectroscopy (SEM/EDS), and confocal microscopy indicated the formation of α4T crystallites in the PS matrix. A modified saturation-regime current voltage relationship was used to estimate organic field-effect transistor (OFET) threshold voltage V TH shifting, and in turn the quantities of stored charge that were observed as a result of dielectric charging. The crystallites increased the maximum charge storage capacity as well as the charge retention capability of the dielectrics. Kelvin probe force microscopy (KPFM) showed that charges were localized near the α4T crystallites upon charging. Trilayer experiments validated the charge retention improvement of α4T crystallite-embedded PS dielectrics. The crystallites also improved breakdown characteristics in PS used as a capacitor dielectric, suggesting their application to storage capacitors in addition to OFET logic.

25 ENERGY STORAGE↗
DOE OSTI2024

Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode

This study reports the electronic properties of the indium tin oxide (ITO)/β-Ga2O3 Schottky diode through the temperature (50–320 K)-dependent current density–voltage, capacitance–voltage, and admittance spectroscopy experiments. The room-temperature turn-on voltage of the ITO/β-Ga2O3 diode was observed to be 0.83 V, and it exhibited a slow increase with decreasing temperature. The ITO/β-Ga2O3 diode's ideality factor (n) varied from 3.92 to 1.05, and the zero-bias Schottky barrier height (φbo) varied from 0.31 to 1.28 eV. The temperature-dependent n and φbo indicate the spatial inhomogeneities of the potential barrier at the Ga2O3-ITO interface. We exploit the Gaussian distribution model to explain the Schottky barrier inhomogeneities, which could be associated with the defects observed by the admittance spectroscopy method.

Engineering↗
DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Redox Chemistry Mediated Control of Morphology and Properties in Electrically Conductive Coordination Polymers: Opportunities and Challenges

Coordination polymers (CPs) and metal–organic frameworks (MOFs) have attracted significant research interest in the past several decades due to their reticular structures and modularity. However, realizing electrically conductive CPs or MOFs with comparable properties to classic conducting organic polymers has only been a recent development. This emerging class of materials has found wide appli-cation in many fields due to combined features of structural rigidity, chemical tunability, porosity, and charge transport. Alongside many studies revealing myriad design approaches to access these materials, the role that redox chemistry plays in both material synthesis and modulation of electronic properties has been an emerging theme. This perspective provides a brief overview of select examples where redox chemistry medi-ates control of morphology and properties in electrically conductive CPs/MOFs. Here, the challenges and limitations in this area are also discussed. Particular challenges include the characterization of redox states in these materials and measuring and understanding highly correlated elec-tronic properties and other unusual physical phenomena which may be important for potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Understanding the effect of specimen size on the properties of fine-grain isotropic nuclear graphite for irradiation studies: Physical, electrical, thermal properties

Programs at Oak Ridge National Laboratory are investigating the effects of neutron irradiation in the High Flux Isotope Reactor (HFIR) on properties of fine-grain nuclear graphites. Specimens were irradiated in the HFIR flux trap, which required using specimens that are smaller than the sizes recommended by ASTM standards. Here, this work has investigated whether subsized specimens can be used to reliably determine the measured physical (density, elastic moduli, and electrical resistivity) and thermal properties (coefficient of thermal conductivity and thermal conductivity). The results show the specimen sizes in this investigation had a minimal influence on any of the measured properties. Even for the properties where size influenced the measured value (density and thermal conductivity), an explanation is provided, and the consequences can be accounted for in post-irradiation results. This work demonstrated that using subsized specimens for physical and thermal property measurements is suitable when necessary for fine-grain isotropic graphite.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Infrared Signatures for Phase Identification in Hafnium Oxide Thin Films

Phase identification in HfO 2 -based thin films is a prerequisite to understanding the mechanisms stabilizing the ferroelectric phase in these materials, which hold great promise in next-generation non-volatile memory and computing technology. While grazing-incidence X-ray diffraction is commonly employed for this purpose, it has difficulty unambiguously differentiating between the ferroelectric phase and other metastable phases that may exist due to similarities in the d-spacings, their low intensities, and the overlapping of reflections. Infrared signatures provide an alternative route. However, their use in phase identification remains limited because phase control has overwhelmingly been accomplished via substituents, thereby convoluting infrared signatures between the substituent and the phase changes they induce. Herein, we report the infrared optical responses of three undoped hafnium oxide films where annealing conditions have been used to create films consisting primarily of the ferroelectric polar orthorhombic Pca2 1 , antipolar orthorhombic Pbca, and monoclinic P2 1 /c phases, as was confirmed via transmission electron microscopy (TEM), UVvisible optical properties, and electrical property measurements. Vibrational signatures acquired from synchrotron nano-Fourier transform infrared spectroscopy (nano-FTIR) are shown to be capable of differentiating between the phases in a non-destructive, rapid, and nanoscale manner. The utility of nano-FTIR is illustrated for a film exhibiting an antiferroelectric polarization response. In this sample, it is proven that this behavior results from the Pbca phase rather than the often-cited tetragonal phase. Here, by demonstrating that IRspectroscopy can unambiguously distinguish phases in this material, this work establishes a tool needed to isolate the factors dictating ferroelectric phase stability in HfO 2 -based materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Importance of the Heat Treatment Scheme on Self-Reducing Reactive Silver Inks

Self-reducing reactive silver inks can print high-quality silver at reasonable temperatures. While numerous studies have explored the impact of processing temperature on electrical properties, the role of the heat treatment scheme has not yet been studied. Common heat treatment schemes include printing and drying inks at room temperature before heat treatment, performing heat treatments while the inks are still wet, and directly printing the inks onto heated substrates. Each scheme generates distinct heat transfer and mass transport kinetics that can affect the silver morphology and electrical properties. However, to date, the impact of different schemes has not been systematically investigated. To address this knowledge gap, this work investigates how different heat treatment schemes impact metal formation, sintering, and the resultant electrical properties of printed self-reducing reactive silver inks. Heat treatment on room-temperature dried inks and wet inks, with top-down (oven) and bottom-up (hot plate) heating sources, were compared. Inks dried at room temperature resulted in extremely porous films that required high heat treatment temperatures (>100 °C) for silver densification. However, these dried films could only densify locally, and their high initial porosities resulted in voids and high resistances (~0.6 Ω mm –1 ) even after heat treatments above 300 °C. Inks that were wet during heat treatment showed moderate improvements in electrical properties with resistances on the order of 0.4 Ω mm –1 at heat treatments of 250 °C. Printing reactive inks directly onto heated substrates yielded the best low-temperature results, with 0.46 Ω mm –1 (5.5 × bulk silver) line resistances achieved at only 90 °C. Overall, this work’s experimental results provide detailed insights into why printing onto a heated substrate results in superior electrical performance compared to more common heat treatment schemes. Additionally, controlling where the precipitation reaction occurs is critical to controlling the film morphology and properties. As a result, this work shows that even an ammonia-based silver reactive ink can achieve good, low-temperature electrical properties with the proper heat treatment scheme.

14 SOLAR ENERGY↗