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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Characterization Of Electrical Response Of Photodetector

Fourier analysis is basis of method of characterizing electrical frequency or time response of photodetector. In method, detector stimulated by optical input signal, intensity modulated with square wave or other repetitive waveform of known frequency spectrum, and output of detector recorded. Electro-optical transfer function, which characterizes frequency response of detector, then computed as ratio between discrete Fourier transforms of output and input waveforms.

Hagopian, John G.↗
NASA NTRS2016

NASA HERMeS Hall Thruster Electrical Configuration Characterization

NASAs Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for development into a flight ready propulsion system. Part of the technology maturation was to test the TDU-1 thruster in several ground based electrical configurations to assess the thruster robustness and suitability to successful in-space operation. The ground based electrical configuration testing has recently been demonstrated as an important step in understanding and assessing how a Hall thruster may operate differently in space compared to ground based testing, and to determine the best configuration to conduct development and qualification testing. This presentation will cover the electrical configuration testing of the TDU-1 HERMeS Hall thruster in NASA Glenn Research Centers Vacuum Facility 5. The three electrical configurations examined are the thruster body tied to facility ground, thruster floating, and finally the thruster body electrically tied to cathode common. The TDU-1 HERMeS was configured with two different exit plane boundary conditions, dielectric and conducting, to examine the influence on the electrical configuration characterization.

Facility↗
NASA NTRS2015

NASA HERMeS Hall Thruster Electrical Configuration Characterization

The NASA Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for development into a flight ready propulsion system. Part of the technology maturation was to test the TDU-1 thruster in several ground based electrical configurations to assess the thruster robustness and suitability to successful in-space operation. The ground based electrical configuration testing has recently been demonstrated as an important step in understanding and assessing how a Hall thruster may operate differently in-space compared to ground based testing, and to determine the best configuration to conduct development and qualification testing. This paper describes the electrical configuration testing of the HERMeS TDU-1 Hall thruster in NASA Glenn Research Center's Vacuum Facility 5. The three electrical configurations examined were 1) thruster body tied to facility ground, 2) thruster floating, and 3) thruster body electrically tied to cathode common. The HERMeS TDU-1 Hall thruster was also configured with two different exit plane boundary conditions, dielectric and conducting, to examine the influence on the electrical configuration characterization.

HERMeS↗
NASA NTRS1987

Effects of long term storage on aerospace nickel cadmium cell performance

Evaluation of the long term effects on aerospace nickel cadmium cells is described. A number of 6Ah and 12Ah capacity cells which were stored in shorted condition for 9 to 11 years at the Goddard Space Flight Center were selected for the study. Of the three tests which were initiated (initial and final destruction analyses of the test cells, electrical characterization tests, and life cycling tests) only the electrical characterization tests are completed; the other tests are scheduled to be completed by February 1987. The preliminary electrial performance data from the life cycling test and chemical composition data from the destructive testing indicate no anomalous behavior.

Yi, Thomas Y.↗
NASA NTRS1987

Ground testing of array modules for the photovoltaic array space power (PASP) experiment

One of the objectives of the PASP experiment is the verification of cost-effective ground simulations of high-voltage solar array/space-environment interactions by comparing the results with flight data. These ground tests consist of electrical characterization, thermal cycling, and plasma chamber simulations. The results of the latter tests are reported. Five array modules which are representative of the flight arrays were tested. The module types are planar silicon, planar gallium arsenide, planar silicon passivated with an integrally deposited cover glass, mini-Cassegrainian concentrator, and SLATS concentrator. The modules were biased to -1000 V in varying plasma densities from 4 x 103 to 2 x 105 e-/cu cm. Each array was tested in both dark and illuminated conditions with a load resistance. In addition to monitoring arcing during the plasma tests, the arrays were visually inspected and electrically characterized before and after exposure in the chamber. The electrical results are tabulated and briefly discussed.

Morris, Robert K.↗
NASA NTRS1989

Characterizations of electrical properties of highT(sub c) superconducting materials

The automated data acquisition system developed in the Space Science Laboratory at Marshall Space Flight Center for measuring electrical properties of high temperature superconductors is described. The acquisition system, consisting of a computer and computer-controlled hardware, allows large numbers of voltage, current, temperature, and magnetic measurements to be performed on bulk and thin film samples. Typical results are shown characterizing transition temperature (T sub c), critical current density (J sub c), and magnetic properties of bulk high T(sub c) materials as a function of temperature.

Sisk, R. C.↗
NASA NTRS1979

Characterization of electrical discharges on Teflon dielectrics used as spacecraft thermal control

The dual effects of system degradation and reduced life of synchronous-orbit satellites as a result of differential spacecraft charging underscore the need for a clearer understanding of the prevailing electrical discharge phenomena. In a laboratory simulation, the electrical discharge current, surface voltage, emitted particle fluxes, and photo-emission associated with discharge events on electron beam irradiated silver-backed Teflon samples were measured. Sample surface damage was examined with optical and electron beam microscopes. The results are suggestive of a model in which the entire sample surface is discharged by lateral sub-surface currents flowing from a charge deposition layer through a localized discharge channel to the back surface of the sample. The associated return current pulse appears to have a duration which may be a signature by which different discharge processes may be characterized.

Yadlowsky, E. J.↗
NASA NTRS2014

Uncertainty Analysis of Seebeck Coefficient and Electrical Resistivity Characterization

In order to provide a complete description of a materials thermoelectric power factor, in addition to the measured nominal value, an uncertainty interval is required. The uncertainty may contain sources of measurement error including systematic bias error and precision error of a statistical nature. The work focuses specifically on the popular ZEM-3 (Ulvac Technologies) measurement system, but the methods apply to any measurement system. The analysis accounts for sources of systematic error including sample preparation tolerance, measurement probe placement, thermocouple cold-finger effect, and measurement parameters; in addition to including uncertainty of a statistical nature. Complete uncertainty analysis of a measurement system allows for more reliable comparison of measurement data between laboratories.

Seebeck effect↗
NASA NTRS1992

Characterization of electric thruster plumes using multiplexed laser induced fluorescence measurements

The use of laser-induced fluorescence to obtain spatially resolved measurements of propellant velocities and temperatures in electric thruster plumes is discussed, with emphasis on two innovations of the technique, namely simultaneous recording of the optogalvanic signal in a hollow cathode lamp for the purpose of calibrating Doppler shifts, and two-beam multiplexing to allow the measurement of two velocity components at once. It is also shown how information on plume fluctuations can be obtained from the multiplxed LIF data. The techniques are demonstrated on the plume from a low power arcjet, operated on argon, and its extension to the measurement of ion velocities in electrostatic ion thrusters and stationary plasma thrusters is discussed.

Ruyten, W. M.↗
NASA NTRS1992

On-orbit characterization of electric propulsion on LEO satellites

Utilizing commercial or military satellites as testbeds for subsystems is a potential platform for small devices. Electric propulsion is a viable and upcoming subsystem that is of high interest to planetary mission engineers as well as commercial satellite developers. It is proposed that by incorporating small lightweight electric propulsion devices onto small satellites as external or 'bolt-on' experiments, an increase in the number of flight opportunities can occur. Specific problems are spacecraft body interaction, contamination effects, thermal interface problems, power conditioning control electronics, and propulsion feed system interfaces.

Barnhart, D.↗
NASA NTRS1977

JAN transistor and diode characterization test program

A statistical summary of electrical characterization was performed on JAN diodes and transistors. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point and highest reading.

Takeda, H.↗
NASA NTRS1975

Study of materials for space processing

Materials were selected for device applications and their commercial use. Experimental arrangements were also made for electrical characterization of single crystals using electrical resistivity and Hall effect measurements. The experimental set-up was tested with some standard samples.

Lal, R. B.↗
NASA NTRS1977

JAN transistor and diode characterization test program, JANTX diode 1N5623

A statistical summary of the electrical characterization of diodes and transistors is presented. Each parameter is presented with test conditions, mean, standard deviation, lowest reading, 10% point (where 10% of all readings are equal to or less than the indicated reading), 90% point (where 90% of all readings are equal to or less than indicated reading) and the highest reading.

Takeda, H.↗
NASA NTRS1987

Growth and characterization of cubic SiC single-crystal films on Si

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Powell, J. Anthony↗
NASA NTRS2011

Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

John, Caroline S.↗
NASA NTRS1984

Stress studies in EFG

Electrical characterization of defects induced in FZ and CZ silicon stress in four-point bending above 1200 C was started. Techniques to study electrical activity that will permit correlation of defect activity with diffusion length and with room and low temperature EBIC are being developed. Preliminary characterization of defects in ribbon grown at very low speeds of less than 1 cm/min shows that the dislocation density is very low over significant regions of cross section, while regions of high dislocation density (approx. 5 x 10(6)/cm(2)) occur in bands in a number of places. Addition measurements of stress distributions in EFG material were obtained at the University of Illinois using shadow-Moire interferometry.

Source record↗
NASA NTRS1979

Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 1

Electrical characterization and qualification tests were performed on the RCA MWS5001D, 1024 by 1-bit, CMOS, random access memory. Characterization tests were performed on five devices. The tests included functional tests, AC parametric worst case pattern selection test, determination of worst-case transition for setup and hold times and a series of schmoo plots. The qualification tests were performed on 32 devices and included a 2000 hour burn in with electrical tests performed at 0 hours and after 168, 1000, and 2000 hours of burn in. The tests performed included functional tests and AC and DC parametric tests. All of the tests in the characterization phase, with the exception of the worst-case transition test, were performed at ambient temperatures of 25, -55 and 125 C. The worst-case transition test was performed at 25 C. The preburn in electrical tests were performed at 25, -55, and 125 C. All burn in endpoint tests were performed at 25, -40, -55, 85, and 125 C.

Klute, A.↗