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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Sketched Nanoscale KTaO 3 -Based Superconducting Quantum Interference Device

The discovery of two-dimensional superconductivity in LaAlO 3 /KTaO 3 (111) and (110) interfaces has raised significant interest in this system. In this paper, we report the first successful fabrication of a direct current superconducting quantum interference device (dc-SQUID) in the KTO system. The key device elements, superconducting weak links, are created by conductive atomic force microscope lithography, which can reversibly control the conductivity at the LAO/KTO (110) interface with nanoscale resolution. The periodic modulation of the SQUID critical current 𝐼 c ⁡(𝐵) with magnetic field corresponds well with our theoretical modeling, which reveals a large kinetic inductance of the superconducting two-dimensional electron gas in KTO. The kinetic inductance of the SQUID is tunable by electrical gating from the back, due to the large dielectric constant of KTO. The demonstration of weak links and SQUIDs in KTO broadens the scope for exploring the underlying physics of KTO superconductivity, including the role of spin-orbit coupling, pairing symmetry, and inhomogeneity. It also promotes KTO as a versatile platform for a growing family of quantum devices, which could be applicable in the realm of quantum computing and information.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance

This study explores the radiation resilience of GaN high-electron-mobility transistors (HEMTs) under various preconditioning treatments—pristine, electro-pulsed, electrically overstressed, and 60 Co gamma-irradiated—with a focus on enhancing survivability in high-radiation environments. Key findings emphasize the gate region’s central role in radiation sensitivity, with increased defect concentrations leading to reduced sensitivity—as determined from reduced single-event transient intensities during pulsed-laser studies—and impacting charge-transport dynamics. Notably, the most sensitive region shifted as a function of bias state, with the drain side of the gate being most sensitive under negative gate bias and the source side under unbiased conditions due to two-dimensional electron gas disruptions. These insights clarify the mechanisms influencing radiation sensitivity in microelectronics and highlight the potential of defect and strain engineering to enhance the radiation hardness of GaN HEMTs across various operational states, providing valuable guidance for applications in space, defense, and other radiation-rich environments.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Measurement of the Neutron Electromagnetic Form Factor Ratio at High Momentum Transfer

The inner structure of the nucleon (proton and neutron) remains a topic of great interest in nuclear and particle physics, after many decades of study. For example, understanding the quark-gluon dynamics inside the nucleon would shed light on how 99% of the nucleon mass is created. The neutron electromagnetic form factors, Gn E and Gn M , give important insights into the neutron structure. The Super BigBite Spectrometer (SBS) program at Jefferson Lab (JLab) seeks to extend the form factor measurements for both the proton and the neutron. The neutron electric form actor, Gn E , has been historically difficult to measure due to the short lifetime of the free neutron and the small value of Gn E . The GEn-II experiment is part of the SBS program and seeks to measure Gn E , significantly increasing the high momentum transfer coverage. A newly designed polarized 3He target increased the figure of merit by three times compared to previous measurements. The analysis of this data is especially challenging due to the unprecedented high-rate environment caused by the open nature of the spectrometer with a direct line of sight to the target. This required developing new Gas Electron Multiplier (GEM) particle trackers which can cover large areas demanded by this setup and handle particle rates up to 500 kHz/cm2. Rates this high over a large area is unprecedented in particle tracking systems and came with a number of challenges. Data taken in the SBS program was critical to understanding hardware and software solutions that improved the track reconstruction efficiency to be >97% with a position resolution of 70 ?m. In previous experiments the proton electromagnetic form factors, Gp E and Gp M were measured up to Q2 = 8.5 GeV2 and Q2 = 30 GeV2, respectively, while Gn E has only been measured up to Q2 = 3.4 GeV2. The GEn-II experiment has measured the neutron form factor ratio, Gn E/Gn M, at Q2 values of 2.90, 6.50, and 9.47 GeV2 by scattering a polarized electron beam with a polarized 3He target, used here as an effective polarized neutron target, and measuring the double spin asymmetry of the cross section. Previous Gn E measurements do not extend above Q2 = 3.4 GeV2, and therefore this analysis has extended the world data by almost three times. The background correction is especially difficult at the higher Q2 settings leading to large systematic errors. As very exploratory results from this early analysis of the data, we find for Q2 = 2.90 GeV2, Gn E = 0.0157 ±stat 0.0016 ±sys 0.0011, for Q2 = 6.50 GeV2, Gn E = 0.0067 ±stat 0.0019 ±sys 0.0005, and for Q2 = 9.46 GeV2, Gn E = 0.0046 ±stat 0.0023 ±sys 0.0005. These results are compared to predictions from the Dyson-Schwinger Equations (DSE) model and a Relativistic Constituent Quark Model (RCQM).

Jeffas, Sean↗
DOE OSTI2025

Nanoscale Editing of Multi and Single Layer Tungsten Disulfide via Gas‐Assisted Focused Electron Beam Induced Etching for Device Prototyping

Focused electron beam induced etching (FEBIE) with XeF 2 (xenon difluoride) precursor is conducted on multi-layer exfoliated WS 2 (tungsten disulfide) and monolayer WS 2 grown by chemical vapor deposition (CVD). The films are characterized by atomic force microscopy (AFM) and Raman and photoluminescence (PL) spectroscopy post-etching. The etch rates/efficiencies are reported as a function of electron beam energy, current, dwell time, and XeF 2 pressure. Bulk film Raman spectra are unchanged post-FEBIE, indicating minimal subsurface damage. Monolayer WS 2 shows a decrease in Raman and PL intensity post-FEBIE, with a dose-to-clear of ≈2 nC µm −2 . The study reveals regimes affected by the various mass transport contributions such as refresh time and the ratio of electrons/XeF 2 . Spontaneous etching was discovered during FEBIE of large patterned areas due to the long frame/refresh times. Density functional theory and ab initio molecular dynamics simulations compares desorption of SF x and WF x molecules from pristine WS 2 basal planes and pore edges, revealing the spontaneous etching is consistent with etching of partially etched monolayers during each frame. Single-line etching width of 21 nm, and patterning flakes into 100 nm wide channels are demonstrated. In conclusion, this work demonstrates the possibility of editing WS 2 flakes into electronic devices of arbitrary dimensions for semiconductor applications.

2D materials↗
DOE OSTI2024

First operation of a multi-channel Q-Pix prototype: measuring transverse electron diffusion in a gas time projection chamber

We report measurements of the transverse diffusion of electrons in P-10 gas (90% Ar, 10% CH 4 ) in a laboratory-scale time projection chamber (TPC) utilizing a novel pixelated signal capture and digitization technique known as Q-Pix. The Q-Pix method incorporates a precision switched integrating transimpedance amplifier whose output is compared to a threshold voltage. Upon reaching the threshold, a comparator sends a 'reset' signal, initiating a discharge of the integrating capacitor. The time difference between successive resets is inversely proportional to the average current at the pixel in that time interval, and the number of resets is directly proportional to the total collected charge. We developed a 16-channel Q-Pix prototype fabricated from commercial off-the-shelf components and coupled them to 16 concentric annular anode electrodes to measure the spatial extent of the electron swarm that reaches the anode after drifting through the uniform field of the TPC. The swarm is produced at a gold photocathode using pulsed UV light. The measured transverse diffusion agrees with simulations in PyBoltz across a range of operating pressures (200–1500 Torr). These results demonstrate that a Q-Pix readout can successfully reconstruct the ionization topology in a TPC.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Laser aberration signatures in expelled electrons from a tenuous gas

We describe a mechanism by which the aberration content of a focused, multiterawatt laser is imprinted upon the forward angular distribution of electrons ionized within and ponderomotively expelled from the focal volume. In our experiments, the laser aberration type and magnitude are controllably varied, and the measured electron distributions are correspondingly modified in a way consistent with predictions from numerical simulations. This imprint mechanism shows potential for enabling the development of accurate focal-spot characterization of intense lasers when fired at full power and is being developed for extension to petawatt laser systems.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Using a multistate mapping approach to surface hopping to predict the ultrafast electron diffraction signal of gas-phase cyclobutanone

Using the recently developed multistate mapping approach to surface hopping (multistate MASH) method combined with SA(3)-CASSCF(12,12)/aug-cc-pVDZ electronic structure calculations, the gas-phase isotropic ultrafast electron diffraction (UED) of cyclobutanone is predicted and analyzed. After excitation into the n-3s Rydberg state (S2), cyclobutanone can relax through two S2/S1 conical intersections, one characterized by compression of the CO bond and the other by dissociation of the α–CC bond. Subsequent transfer into the ground state (S0) is then achieved via two additional S1/S0 conical intersections that lead to three reaction pathways: α ring-opening, ethene/ketene production, and CO liberation. The isotropic gas-phase UED signal is predicted from the multistate MASH simulations, allowing for a direct comparison to the experimental data. This work, which is a contribution to the cyclobutanone prediction challenge, facilitates the identification of the main photoproducts in the UED signal and thereby emphasizes the importance of dynamics simulations for the interpretation of ultrafast experiments.

Chemistry↗
DOE OSTI2025

Characterization of Gas Bremsstrahlung sources at the Electron-Ion Collider

This report estimates the potential impact of Gas Bremsstrahlung, generated as the electron beam traverses the straight sections of the storage ring and impinges onto selected locations of the Electron-Ion Collider. The source terms were calculated for routine operation scenarios at three different energies: 5, 10 and 18 GeV, using the FLUKA Monte Carlo particle transport and interaction code. The source term’s power distributions were validated and compared with the Gas Bremsstrahlung produced in the long straight sections of the National Synchrotron Light Source II storage ring.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Real-time reconstruction and control of pedestal-top electron density using RMP and gas puff at KSTAR

We report the experimental results of controlling the pedestal-top electron density by applying resonant magnetic perturbation (RMP) with in-vessel control coils and the main gas puff in the 2024-2025 KSTAR experimental campaign. The density is reconstructed using a parameterized $ψ_N$ grid and five channels of line-averaged density measured by the two-colored interferometer (TCI). The reconstruction procedure is accelerated by deploying a multi-layer perceptron to run in approximately 120 µ s and is sufficiently fast for real-time control. A proportional-integral controller was adopted, with the controller gains estimated from the system identification procedure. The experimental results demonstrate that the developed controller can follow a dynamic target while exclusively using both actuators. The absolute percentage errors between the electron density at $ψ_N$ = 0.89 and the target were approximately 1.5% median and a 2.5% average, respectively. The developed controller can even lower the density by using the pump-out mechanism under RMP, and it can follow a more dynamic range of density targets than a single actuator controller. The developed controller will enable experimental scenario exploration within a shot by dynamically setting the density target or maintaining a constant electron density within a discharge.

EFIT↗
DOE OSTI2025

Energy resolution and gain measurements in Argon-based gas mixtures: Exploring Ar:CF 4 for low energy measurements with TPCs

Time Projection Chambers (TPCs) are among the most advanced charged-particle detectors. Gas-filled TPCs have tracking capabilities that provide 3D-imaging of charged particles with a good energy resolution for spectroscopy. Different gas mixtures have different properties that determine the energy resolution as well as the spatial resolution. Therefore, optimization of operating conditions is required to simultaneously obtain adequate gain, energy resolution, spatial/track resolution, as well as higher drift velocities for high counting rates applications. Ar:CF 4 gas mixture has higher electron drift velocities and lower electron diffusion, which makes it an attractive candidate for TPC filling gas for low energy nuclear physics applications as compared to commonly used Ar:CH 4 and Ar:CO 2 gas mixtures, namely when tracking information is needed. However, other properties, including energy resolution and gain, remain largely unexplored in Ar:CF 4 especially at pressures and other operating conditions relevant for low-energy nuclear physics applications. Here, in this paper we report on gain and energy resolution measurements, using Gas Electron Multipliers (GEMs), in the less explored Ar:CF 4 mixture (Alfonsi et al., 2006), as well as in the more commonly used gas mixtures Ar:CH 4 and Ar:CO 2 . In addition to obtaining energy resolution and gain, we provide results from Garfield++ simulations for gain fluctuations, and their impact on energy resolution is discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Estimation of mean electron energy in helium surface ionization waves on dielectric substrates

Abstract The determination of basic plasma parameters in atmospheric pressure discharges is critical to advancing their use in applications. Atmospheric pressure plasma jets have found use in the fields of medicine, agriculture, material modification and others. Atmospheric pressure plasma jets often generate plasma surface ionization waves (SIW) which interact with and propagate over surfaces. Electrical diagnostics are challenging in SIW due to high collision frequencies and small scale of the plasma discharge. This work employs a passive optical emission line ratio technique to estimate the mean electron energy in SIW over planar dielectric substrates. The method uses an intensity ratio of two helium triplet lines: He( 3 3 S ) at 706.5 nm and He( 3 3 D ) at 587.56 nm. A collisional-radiative model is used to correlate line ratio to mean electron energy and determine dependencies on electron density and He/air gas mixture. Mean electron energies ranging from 3–8 eV are determined in He/air mixtures and are found to remain constant as the surface wave propagates radially. This work provides a 2D, time-resolved, mean electron energy diagnostic for surface ionization wave propagation and validation of numerical modeling in atmospheric pressure systems with spatially varying He/air gas mixtures. The model in question is designed for use with any He line ratio in the n = 3 excitation level.

Morsell, Joshua (ORCID:0000000331073002)↗
DOE OSTI2025

SCGSR Final Report

Dual phase noble liquid time projection chambers (TPCs) have an unprecedented sensitivity towards dark matter searches and neutrinos, owing to their ability to detect single electrons. When a particle deposits energy into one of these detectors, electrons are released and drifted into a gaseous region of high electric field. In the gas, the electrons are accelerated to produce extra light into what is called an S2 pulse. This light is far easier to detect than the current induced from a single electron. The two widely used elements for noble liquid detectors are Xe and Ar. Xe has a larger chance of being hit by neutrinos or dark matter, but ends with a lower (i.e. harder to detect) energy when struck. However, Ar light is hard to reflect and detect due to its short wavelength which is absorbed by most materials. While one may use TPB to re-emit this light at a longer wavelength, spatial variations of TPB thickness can smear the amount of re-emitted light, and thus cause a poor S2 energy resolution and spatial resolution. Furthermore, a single electron pulse in Ar is spread over a much longer time than one in Xe, which makes it harder to identify single electrons in Ar. The goal of Xe doping is to combine the best aspects of Ar with the best aspects of Xe. More specifically, this means a detector with a larger yield of photons and electrons produced per energy deposition, an ability to collect more of the light given by those signals, and a narrower pulse from the electron signal. During this project, we developed and operated a detector that can overcome the thermodynamic challenges of Xe doping – namely, preventing Xe from freezing. In the first experimental run during this award period, we found that we can achieve at least 5% of Xe in LAr, and measure the Xe concentration in the gas. In the second run, we installed our detector and saw the first S2 pulses in a dual phase Xe doped LAr TPC. With the data we took, we quantified the effect of Xe doping on the detectability of wavelength-shifted light produced in a Xe doped Ar mixture, as well as the single electron pulse shape. While the Ar light has successfully been wavelength shifted, we learned that much to our surprise, Xe doping actually makes the S2 pulse wider before it makes it narrower.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Dissociation of gas-phase anisole induced by low-energy electron interactions: understanding patterns of aromatic bond cleavage

Abstract In view of elucidating the fragmentation patterns of aromatic systems induced by low-energy electron interactions, dissociative electron attachment (DEA) to gas-phase anisole was performed. Anionic fragments resulting from this DEA process were detected by a quadrupole mass spectrometer, and ion yields of those fragments as a function of incident electron energy were rendered. Our study showed the formation of CH 3 − , HCC − , and OCH 3 − fragments, suggesting that various dissociation channels proceed out of DEA to anisole. We employed density functional theory to compute thermodynamic threshold energies for each potential dissociation channel. Those theoretical calculations supported the prediction that the CH 3 − and OCH 3 − fragments form via mechanisms of single-bond cleavage; the HCC − fragments may form through two-, three-, or four-body dissociation channels that entail hydrogen transfers and the cleavage of multiple aromatic bonds. The experimental resonance energies that form the CH 3 − , HCC − , and OCH 3 − fragments were 6.0 eV, 5.8 and 9.7 eV, and 9.8 eV, respectively. Given the classification of anisole as a monosubstituted aromatic species, our results explain generalizable patterns of electron-mediated dissociation in aromatic systems.

Finley, Jacob (ORCID:0009000606963352)↗
DOE OSTI2025

Nanometer-scale resolution in an ultra-high pressure environmental TEM holder

Environmental Transmission Electron Microscopy gas holders are vital for studying catalyst nanostructures in reactive gases. Although there are existing methods to understand the behavior of catalysts during reaction, a “pressure gap” exists. Pressures of up to 4.5 bar have been demonstrated, but many industrial catalysts operate at 10–100 bar. This work introduces an ultra-high-pressure TEM gas holder designed to bridge this gap. Experiments demonstrate it can safely operate and achieve nanometer-scale resolution (~ 1.5 nm) in an Environmental TEM at pressures up to 27.5 bar. Practical resolution limitations are attributed to contamination and vibration rather than increased gas scatter.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Synthesis and transport properties of epitaxial Bi (111) films on GaAs (111) substrates

In recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties. We report upon the growth and electrical transport properties of epitaxial Bi (111) films in the thickness range of 5–32 nm deposited directly on GaAs (111) substrates, without a buffer layer. The quality of Bi films is found to depend on conditions for substrate treatment using Ar + ion-milling and annealing. Substrates milled at low ion beam currents display poor surface reconstruction after annealing, which hinders the growth of high-quality films. In contrast, substrates milled under optimized conditions led to reconstructed surfaces upon annealing, resulting in epitaxial Bi films with predominantly single-domain orientation. Although epitaxial films formed in both cases, transport measurements indicated significantly higher conductivity for films grown on optimally treated substrates. Measurements at low temperatures suggest that the transport properties are dominated by a surface state with high mobility electrons. Magneto-transport measurements suggest that conductivity and mobility improve progressively with increasing film thickness. For the thinnest 5 nm film, a hole-like state emerges, presumably as the electron-like state is gapped out. These results provide a robust methodology for growing high-quality epitaxial Bi films on GaAs (111) and offer insights into their unique transport properties and our ability to tune them.

Atomic force microscopy↗
DOE OSTI2025

Interplay of superconducting, metallic, and crystalline states of composite fermions at 𝜈 = $\frac{1}{6}$ in wide quantum wells

Evidence for developing fractional quantum Hall effect (FQHE) at filling fraction 𝜈 = 1/6 and 1/8 was recently reported in wide GaAs quantum wells [Wang et al., Phys. Rev. Lett. 134, 046502 (2025)]. In this article, we theoretically investigate the nature of the state at 𝜈 = 1/6 as a function of the quantum well width and the density by considering composite-fermion (CF) crystals, CF Fermi sea, and various kinds of paired CF states. The 𝑓-wave paired state has the lowest energy among the paired CF states. However, for parameters of interest, the energies of the CF crystal, the CF Fermi liquid, and the 𝑓-wave paired CF state are too close to distinguish. We, therefore, predict that 𝑖𝑓 the FQHE at 𝜈 = 1/6 is experimentally confirmed, this state would be an 𝑓-wave paired state of CFs, which can be verified by measurement of its thermal Hall conductance. Exact diagonalization studies on clean systems with up to eight electrons show that the ground states at 𝜈 = 𝑛/(6⁢𝑛 ± 1) are incompressible for all widths and densities we have considered, and are well described by the corresponding Laughlin and Jain states. We propose a phase diagram for large quantum well widths and densities in which at zero disorder, incompressible FQHE states are stabilized at 𝜈 = 𝑛/(6⁢𝑛 ± 1) and 𝜈 = 1/6, but in between these fillings the CF crystal is stabilized. We also present a qualitative discussion on the effects of disorder and propose a schematic phase diagram based on it. With disorder, which creates a spatial variation in the filling factor, two regimes are identified: (i) for small disorder, when the incompressible states percolate at the special fillings, FQHE with quantized Hall plateaus and vanishing longitudinal resistance should occur; and (ii) for larger disorder, when the CF crystal percolates, the longitudinal resistance rises with decreasing temperature but the domains of FQHE liquid produce minima at the special filling factors. Here, experiments are consistent with the latter scenario. We also mention a possible connection of the phase diagram presented here to a puzzling behavior observed for the fractional quantum anomalous Hall effect in pentalayer graphene.

Composite fermions↗