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40 records · Page 3

DC Hall coefficient of the strongly correlated Hubbard model

The Hall coefficient is related to the effective carrier density and Fermi surface topology in non-interacting and weakly interacting systems. In strongly correlated systems, the relation between the Hall coefficient and single-particle properties is less clear. Clarifying this relation would give insight into the nature of transport in strongly correlated materials that lack well-formed quasiparticles. In this work, we investigate the DC Hall coefficient of the Hubbard model using determinant quantum Monte Carlo in conjunction with a recently developed expansion of magneto-transport coefficients in terms of thermodynamic susceptibilities. At leading order in the expansion, we observe a change of sign in the Hall coefficient as a function of temperature and interaction strength, which we relate to a change in the topology of the apparent Fermi surface. We also combine our Hall coefficient results with optical conductivity values to evaluate the Hall angle, as well as effective mobility and effective mass based on Drude theory of metals.

36 MATERIALS SCIENCE↗

Magnetoresistance effects in a spin-fermion model for multilayers

Here, we consider a spin-fermion model consisting of free electrons coupled to classical spins where the latter are embedded in a quasi-one-dimensional superlattice structure consisting of spin blocks separated by spinless buffers. Using a spiral ansatz for the spins, we study the effect of the electron mediated Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction on the $\textit{T}$ = 0 ground state of the system. We find that the RKKY interaction can lead to ferromagnetic, antiferromagnetic, or intermediate spiral phases for different system parameters. When the width is much larger than the length of the individual blocks, the spiral phases are suppressed, and the ground state oscillates between ferromagnetic and antiferromagnetic orders as the size of the buffer regions is varied. This is accompanied by a corresponding oscillation in the Drude weight reflecting an increased conductivity in the ferromagnetic state compared to the antiferromagnetic one. These results are reminiscent of classic giant magnetoresistance phenomena observed in a similar geometry of thin sandwiched magnetic and nonmagnetic layers. Our analysis provides a robust framework for understanding the role of the RKKY interaction on the ground-state order and corresponding transport properties of such systems, extending beyond the conventional perturbative regime.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exact results for nonlinear Drude weights in the spin-1/2 XXZ chain

Nonlinear Drude weight (NLDW) is a generalization of the linear Drude weight, which characterizes the nonlinear transport in quantum many-body systems. We investigate these weights for the spin-1/2 XXZ chain in the critical regime. The effects of the Dzyaloshinskii-Moriya interaction and an external magnetic field are also studied. Solving the Bethe equations numerically, we obtain these weights for very large system sizes and identify parameter regimes where the weights diverge in the thermodynamic limit. These divergences appear in all the orders studied in this Letter and can be regarded as a generic feature of the NLDWs. We study the origin of these divergences and reveal that they result from nonanalytic finite-size corrections to the ground-state energy. As a result, we compute closed-form expressions for several weights in the thermodynamic limit and find excellent agreement with the numerical results.

1-dimensional systems↗

Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga 2 O 3

Gallium oxide (Ga 2 O 3 ) is a promising ultrawide bandgap semiconductor for next-generation power electronics and optoelectronic devices. Here, temperature-dependent and polarization-resolved photoluminescence excitation spectroscopy data, complemented by hybrid-functional first-principles calculations, are presented, and a microscopic model is derived that explains the interplay of hole migration, defect trapping, and carrier recombination at defects underlying thermal quenching phenomena in α- and β-Ga 2 O 3 . In α-Ga 2 O 3 , the UV emission is attributed to self-trapped holes, while the blue luminescence arises from defect-related processes, including gallium split vacancies and their defect complexes. Calculations reveal an energy barrier of 88 meV for self-trapped hole migration in α-Ga 2 O 3 , consistent with activation energies from temperature-dependent photoluminescence. This enables efficient trapping by defects, enhancing blue luminescence and quenching UV emission. In β-Ga 2 O 3 , a higher migration barrier of 0.36 eV reduces the defect trapping, allowing the UV self-trapped hole emission to remain intense, with blue luminescence emerging only at elevated temperatures. These results establish a direct link between self-trapped hole migration, defect trapping, and thermal quenching of emission in both phases. The insights advance the understanding of carrier dynamics in ultrawide bandgap oxides and may guide defect engineering for high-performance functional devices.

Hajizadeh, Nima [Leibniz-Institut im Forschungsver↗