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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Growth from Solutions: Kink dynamics, Stoichiometry, Face Kinetics and stability in turbulent flow

1. Kink dynamics. The first segment of a polygomized dislocation spiral step measured by AFM demonstrates up to 60% scattering in the critical length l*- the length when the segment starts to propagate. On orthorhombic lysozyme, this length is shorter than that the observed interkink distance. Step energy from the critical segment length based on the Gibbs-Thomson law (GTL), l* = 20(omega)alpha/(Delta)mu is several times larger than the energy from 2D nucleation rate. Here o is tine building block specific voiume, a is the step riser specific free energy, Delta(mu) is the crystallization driving force. These new data support our earlier assumption that the classical Frenkel, Burton -Cabrera-Frank concept of the abundant kink supply by fluctuations is not applicable for strongly polygonized steps. Step rate measurements on brushite confirms that statement. This is the1D nucleation of kinks that control step propagation. The GTL is valid only if l* <Dk/vk, the diffusion path of a kink that has diffusivity Dk and average growth velocity vk. This is equivalent to supersaturations sigma less than approx. alpha/2l*, where alpha is the building block size. For lysozyme, sigma much less than (1%). Conventionally used interstep distance generated by screw dislocation, 19(omega)alpha/Delta(mu) should be replaced by the very different real one, approx.4l*. 2. Stoichiometry. Kink, and thus step and face rates of a non-Kossel complex molecular monocomponent or any binary, AB, lattice was found theoretically to be proportional to 1/(zeta(sup 1/2) + zeta(sup - 1/2)), where zeta = [B]/[A] is the stoichiometry ratio in solution. The velocities reach maxima at zeta = 1. AFM studies of step rates on CaOxalate monohydrate (kidney stones) from aqueous solution was found to obey the law mentioned above. Generalization for more complex lattice will be discussed. 3. Turbulence. In agreement with theory, high precision in-situ laser interferometry of the (101) KDP crystal face shows step bunching if solution flows parallel to the step flow. The bunch height increases with the distance the bunch travels, i.e. with the face size. However, when the flow rate, u, increases, at u greater than approx. 1 m / s , the average step bunch height decreases as 1/u. The pheonomenon is attributed to the turbulent rather than laminar viscous boundary layer where diffusivity Dt = 0.5u(sub tau),y, i.e. increases linearly with the distance y from the solid face. Friction velocity, u(sub tau) approx. u(sup 7/8). Dramatically larger rate of the mass/heat transport within the turbulent, as compared to the laminar, viscous layer will be discussed.

Chernov, A. A.↗
DOE OSTI2020

Van der Waals Nanowires with Continuously Variable Interlayer Twist and Twist Homojunctions

Abstract Moiré patterns at van der Waals interfaces between twisted 2D crystals give rise to distinct optoelectronic excitations, as well as, narrowly dispersive bands responsible for correlated electron phenomena. Contrasting with the conventional, mechanically stacked planar twist moirés, recent work shows twisted van der Waals interfaces spontaneously formed in nanowires of layered crystals, where Eshelby twist due to axial screw dislocations stabilizes a chiral structure with small interlayer rotation. Here, the realization of tunable twist in germanium(II) sulfide (GeS) van der Waals nanowires is reported. Tapered nanowires host continuously variable interlayer twist. Homojunctions between dislocated (chiral) and defect‐free (achiral) segments are obtained by triggering the emission of axial dislocations during growth. Measurements across such junctions, implemented here using local absorption and luminescence spectroscopy, provide a convenient tool for detecting twist effects. The results identify a versatile system for 3D twistronics, probing moiré physics, and for realizing moiré architectures without equivalent in planar systems.

Sutter, Peter↗
DOE OSTI2015

On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN

Using scanning electron microscopy in the cathodoluminescence mode, it is shown that straight segments of a-screw dislocations introduced by plastic deformation at room temperature into unintentionally doped low-resistance gallium nitride luminesce in the spectral range 3.1–3.2 eV at 70 K. The spectral composition of dislocation luminescence shows a fine doublet structure with a component width of ∼15 meV and splitting of ∼30 meV, accompanied by LO-phonon replicas. Luminescent screw dislocations move upon exposure to an electron beam and at low temperatures, but retain immobility for a long time without external excitation. Optical transitions involving the quantum-well states of a stacking fault in a split-dislocation core are considered to be the most probable mechanism of the observed phenomenon.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of heavy ion irradiation on microstructural evolution in CF8 cast austenitic stainless steel

The microstructural evolution in ferrite and austenitic in cast austenitic stainless steel (CASS) CF8, as received or thermally aged at 400 °C for 10,000 h, was followed under TEM with in situ irradiation of 1 MeV Kr ions at 300 and 350 °C to a fluence of 1.9 × 10 15 ions/cm 2 (~3 dpa) at the IVEM-Tandem Facility. For the unaged CF8, the irradiation-induced dislocation loops appeared at a much lower dose in the austenite than in the ferrite. At the end dose, the austenite formed a well-developed dislocation network microstructure, while the ferrite exhibited an extended dislocation structure as line segments. Compared to the unaged CF8, the aged specimen appeared to have lower rate of damage accumulation. The rate of microstructural evolution under irradiation in the ferrite was significantly lower in the aged specimen than in the unaged. Finally, we attributed this difference to the different initial microstructures in the unaged and aged specimens, which implies that thermal aging and irradiation are not independent but interconnected damage processes.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Chirality and dislocation effects in single nanostructures probed by whispering gallery modes

Nanostructures such as nanoribbons and -wires are of interest as components for building integrated photonic systems, especially if their basic functionality as dielectric waveguides can be extended by chiroptical phenomena or modifications of their optoelectronic properties by extended defects, such as dislocations. However, conventional optical measurements typically require monodisperse (and chiral) ensembles, and identifying emerging chiral optical activity or dislocation effects in single nanostructures has remained an unmet challenge. Here we show that whispering gallery modes can probe chirality and dislocation effects in single nanowires. Wires of the van der Waals semiconductor germanium(II) sulfide (GeS), obtained by vapor–liquid–solid growth, invariably form as growth spirals around a single screw dislocation that gives rise to a chiral structure and can modify the electronic properties. Cathodoluminescence spectroscopy on single tapered GeS nanowires containing joined dislocated and defect-free segments, augmented by numerical simulations and ab-initio calculations, identifies chiral whispering gallery modes as well as a pronounced modulation of the electronic structure attributed to the screw dislocation. Further, our results establish chiral light-matter interactions and dislocation-induced electronic modifications in single nanostructures, paving the way for their application in multifunctional photonic architectures.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Prismatic-to-basal plastic slip transition in zirconium

Here, we model three-dimensional dislocation ensembles in Zr pillars using newly developed mobility laws for dislocations on prismatic and basal planes. The effects of the loading orientation and temperature on the micro-scale mechanical response of single crystals are systematically explored. Easy dislocation glide is observed on prismatic planes, while hard glide occurs on basal planes. By selection of sample temperature and loading orientation, we show that the transition from prismatic to basal glide of dislocation ensembles can be controlled. We also show that the presence of dislocation cross-slip strongly promotes prismatic glide as a result of prismatic/basal cross-slip energy asymmetry. Cross-slip does not alter the occurrence of plastic slip transition but only induces a shift towards higher temperatures. The preponderance of plastic slip on basal or prismatic planes is found to be mediated by a transitional dislocation, which is composed of glissile segments on parallel prismatic planes connected by glissile super-jogs on basal planes. These findings provide a mechanistic understanding of experiments and highlight the significance of transitional prismatic-basal dislocations on the macroscopic characteristics of plasticity in HCP crystals.

36 MATERIALS SCIENCE↗
NASA NTRS1991

A synthetic seismicity model for the Middle America Trench

A novel iterative technique, based on the concept of fault segmentation and computed using 2D static dislocation theory, for building models of seismicity and fault interaction which are physically acceptable and geometrically and kinematically correct, is presented. The technique is applied in two steps to seismicity observed at the Middle America Trench. The first constructs generic models which randomly draw segment strengths and lengths from a 2D probability distribution. The second constructs predictive models in which segment lengths and strengths are adjusted to mimic the actual geography and timing of large historical earthquakes. Both types of models reproduce the statistics of seismicity over five units of magnitude and duplicate other aspects including foreshock and aftershock sequences, migration of foci, and the capacity to produce both characteristic and noncharacteristic earthquakes. Over a period of about 150 yr the complex interaction of fault segments and the nonlinear failure conditions conspire to transform an apparently deterministic model into a chaotic one.

Ward, Steven N.↗
DOE OSTI2018

Dislocation Networks and the Microstructural Origin of Strain Hardening

In this paper, when metals plastically deform, the density of line defects called dislocations increases and the microstructure is continuously refined, leading to the strain hardening behavior. Using discrete dislocation dynamics simulations, we demonstrate the fundamental role of junction formation in connecting dislocation microstructure evolution and strain hardening in face-centered cubic (fcc) Cu. The dislocation network formed consists of line segments whose lengths closely follow an exponential distribution. This exponential distribution is a consequence of junction formation, which can be modeled as a one-dimensional Poisson process. According to the exponential distribution, two non-dimensional parameters control microstructure evolution, with the hardening rate dictated by the rate of stable junction formation. Among the types of junctions in fcc crystals, we find that glissile junctions make the dominant contribution to strain hardening.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2004

Steps in Solution Growth: Revised Gibbs-Thomson Law, Turbulence and Morphological Stability

Two groups of new phenomena revealed by AFM and high resolution optical interferometry on crystal faces growing from solutions will be discussed. 1. Spacing between strongly polygonized spiral steps with low less than 10(exp -2) kink density on lysozyme and K- biphtalate do not follow the Burton-cabrera-Frank theory. The critical length of the yet immobile first Short step segment adjacent to a pinning defect (dislocation, stacking fault) is many times longer than that following from the step free energy. The low-kink density steps are typical of many growth conditions and materials, including low temperature gas phase epitaxy and MBE. 2. The step bunching pattern on the approx. 1 cm long { 110) KDP face growing from the turbulent solution flow (Re (triple bonds) 10(exp 4), solution flow rate approx. 1 m/s) suggests that the step bunch height does not increase infinitely as the bunch path on the crystal face rises, as is usually observed on large KDP crystals. The mechanism controlling the maximal bunch width and height is based on the drag of the solution depleted by the step bunch down thc solution stream. It includes splitting, coagulation and interlacing of bunches

Chernov, A. A.↗
DOE OSTI2025

Dislocation nano-hydrides in nickel: Nucleation, evolution and effects on dislocation behaviors

Nano-hydrides have been predicted to precipitate at the core of edge dislocations in the Ni-H system, a mechanism that may promote hydrogen embrittlement. However, nano-hydride nucleation, growth, and effects on dislocation behavior have seldom been explored. This work combines molecular dynamics grand canonical Monte Carlo (MD-GCMC) simulations and continuum modeling to uncover a wide range of phenomena linked to dislocation nano-hydrides. Simulations reveal that nano-hydrides can be stabilized at dislocation cores with all character angles, including screw segments, due to the hydrostatic stresses around the cores of the Shockley partials. Nano-hydride nucleation takes place in these regions, and growth is dictated by the character angle θ of the perfect dislocation. The equilibrium stacking fault width d eq varies dynamically to increase the local hydrostatic stress field and facilitate the formation of the nano-hydride, forming a constriction-like feature and leading to three distinct behaviors: d eq decreases for θ > 30°, d eq remains unchanged for θ = 30°, and d eq increases for θ < 30°. Remote hydrostatic and Escaig stresses are also shown to influence the nucleation stage, implying stress concentrations such as those ahead of crack tips may facilitate nano-hydride precipitation. Moreover, we identify a new hydrogen-induced 60° dislocation reaction that emits a Shockley partial on a conjugate plane, with potential implications for twin nucleation. Testable predictions from this study are then used to reinterpret previous results from the literature. In conclusion, these findings provide a comprehensive framework to assess nano-hydride formation and evolution at dislocations in nickel and other face-centered cubic metals, with important implications to hydrogen embrittlement.

Dislocations↗
DOE OSTI2016

An online replanning method using warm start optimization and aperture morphing for flattening-filter-free beams

Purpose: In a situation where a couch shift for patient positioning is not preferred or prohibited (e.g., MR-linac), segment aperture morphing (SAM) can address target dislocation and deformation. For IMRT/VMAT with flattening-filter-free (FFF) beams, however, SAM method would lead to an adverse translational dose effect due to the beam unflattening. Here the authors propose a new two-step process to address both the translational effect of FFF beams and the target deformation. Methods: The replanning method consists of an offline and an online step. The offline step is to create a series of preshifted-plans (PSPs) obtained by a so-called “warm start” optimization (starting optimization from the original plan, rather than from scratch) at a series of isocenter shifts. The PSPs all have the same number of segments with very similar shapes, since the warm start optimization only adjusts the MLC positions instead of regenerating them. In the online step, a new plan is obtained by picking the closest PSP or linearly interpolating the MLC positions and the monitor units of the closest PSPs for the shift determined from the image of the day. This two-step process is completely automated and almost instantaneous (no optimization or dose calculation needed). The previously developed SAM algorithm is then applied for daily deformation. The authors tested the method on sample prostate and pancreas cases. Results: The two-step interpolation method can account for the adverse dose effects from FFF beams, while SAM corrects for the target deformation. Plan interpolation method is effective in diminishing the unflat beam effect and may allow reducing the required number of PSPs. The whole process takes the same time as the previously reported SAM process (5–10 min). Conclusions: The new two-step method plus SAM can address both the translation effects of FFF beams and target deformation, and can be executed in full automation except the delineation of target contour required by the SAM process.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

SU-E-J-126: An Online Replanning Method for FFF Beams Without Couch Shift

Purpose: In a situation that couch shift for patient positioning is not preferred or prohibited (e.g., MR-Linac), segment aperture morphing (SAM) can address target dislocation and deformation. For IMRT/VMAT with flattening filter free (FFF) beams, however, SAM method would lead to an adverse translational dose effect due to the beam unflattening. Here we propose a new 2-step process to address both the translational effect of FFF beams and the target deformation. Methods: The replanning method consists of an offline and an online steps. The offline step is to create a series of pre-shifted plans (PSP) obtained by a so called “warm start” optimization (starting optimization from the original plan, rather from scratch) at a series of isocenter shifts with fixed distance (e.g. 2 cm, at x,y,z = 2,0,0 ; 2,2,0 ; 0,2,0; …;− 2,0,0). The PSPs all have the same number of segments with very similar shapes, since the warm-start optimization only adjusts the MLC positions instead of regenerating them. In the online step, a new plan is obtained by linearly interpolating the MLC positions and the monitor units of the closest PSPs for the shift determined from the image of the day. This two-step process is completely automated, and instantaneously fast (no optimization or dose calculation needed). The previously-developed SAM algorithm is then applied for daily deformation. We tested the method on sample prostate and pancreas cases. Results: The two-step interpolation method can account for the adverse dose effects from FFF beams, while SAM corrects for the target deformation. The whole process takes the same time as the previously reported SAM process (5–10 min). Conclusion: The new two-step method plus SAM can address both the translation effects of FFF beams and target deformation, and can be executed in full automation requiring no additional time from the SAM process. This research was supported by Elekta inc. (Crawley, UK)

60 APPLIED LIFE SCIENCES↗
DOE OSTI2019

ADVANCED-STEM-BASED DEEP LEARNING FOR SEMANTIC SEGMENTATION OF DEFECTS IN STEELS

In this work, we developed a novel deep convolutional neural network (DCNN) model, called DefectNet, for robust and automated semantic segmentation of three crystallographic defects including line dislocations, precipitates and voids commonly observed in structural metals and alloys. In previous work, we established an experimental protocol for a diffraction contrast imaging scanning transmission electron microscopy (DCI STEM) technique and tailored it specifically for imaging defects in popular iron-based structural alloy. Thus, the DefectNet was trained over a small but high-quality DCI STEM defect image sets of a HT-9 martensitic steel before and after neutron irradiation for 111.8 dpa at 412°C. For the defect quantification that typically takes at least half an hour even for an expert, with a good model the machine learning algorithm can produce more reproducible and reliable quantification in a few seconds. This work demonstrates the feasibility of using deep learning algorithms for fast and accurate defect quantitative analysis.

Machine Learning, Radiation effects, Image analysi↗
NASA NTRS1992

An application of synthetic seismicity in earthquake statistics - The Middle America Trench

The way in which seismicity calculations which are based on the concept of fault segmentation incorporate the physics of faulting through static dislocation theory can improve earthquake recurrence statistics and hone the probabilities of hazard is shown. For the Middle America Trench, the spread parameters of the best-fitting lognormal or Weibull distributions (about 0.75) are much larger than the 0.21 intrinsic spread proposed in the Nishenko Buland (1987) hypothesis. Stress interaction between fault segments disrupts time or slip predictability and causes earthquake recurrence to be far more aperiodic than has been suggested.

Ward, Steven N.↗
DOE OSTI2019

DefectSegNet

DefectSegNet for semantic segmentation of defects in Steels The first and most important step of automating defect analysis is perceptual defect identification. In terms of digital image processing, semantic segmentation best emulates human recognition of defect features – it identifies the crystallographic defects and where they are located in a TEM micrograph. We solved this problem by developing DefectSegNet, a novel hybrid CNN algorithm for robust and automated semantic segmentation of three crystallographic defects, including line dislocations, precipitates and voids, that are commonly observed in structural metals and alloys.

Sainju, Rajat↗
DOE OSTI2019

Deep Learning for Semantic Segmentation of Defects in Advanced STEM Images of Steels

Crystalline materials exhibit long-range ordered lattice unit, within which resides nonperiodic structural features called defects. These crystallographic defects play a vital role in determining the physical and mechanical properties of a wide range of material systems. While computer vision has demonstrated success in recognizing feature patterns in images with well defined contrast, automated identification of nanometer scale crystallographic defects in electron micrographs governed by complex contrast mechanism is still a challenging task. Here, building upon an advanced defect imaging mode that offers high feature clarity, we introduce DefectSegNet - a new convolutional neural network (CNN) architecture that performs semantic segmentation of three common crystallographic defects in structural alloys: dislocation lines, precipitates and voids. Results from supervised training of a small set of high-quality defect images of steels show high pixel-wise accuracy across all three types of defects: 91.60 ± 1.77% on dislocations, 93.39 ± 1.00% on precipitates, and 98.85 ± 0.56% on voids. We discuss the sources of uncertainties in CNN prediction, and the training data in terms of feature density, representation and homogeneity and their effects on deep learning performance. Further defect quantification using DefectSegNet prediction outperforms human expert average, presenting a promising new workflow for fast and statistically meaningful quantification of materials defects.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Simulation of the interaction between an edge dislocation and $\langle$111$\rangle$ interstitial dislocation loops in α-iron

The dependence of the interactions of intermediate-size ½<111> self-interstitial atom (SIA) loops with an edge dislocation on strain rate and temperature was discovered by molecular dynamics (MD) simulations for the interatomic potential derived by Ackland et al. (A97). For low temperatures ($T$ =1 K), the mechanisms of the interactions were in agreement with recent literature. It was demonstrated that a second passing of the dislocation through the loop led to a different mechanism than the one that occurred upon first passing. Since these mechanisms are associated with different SIA loop sizes, and since the loop lost a number of SIAs upon first interaction, it was deduced that the dividing threshold between large and small loops (rendering them strong or weak obstacles, respectively) is at the vicinity of the loop size studied (169 SIAs). For higher temperatures ($T$ = 300 K), the strain rate dependence proved strong: for low strain rates, the dislocation absorbed the loop as a double super-jog almost immediately and continued its glide unimpeded. For a high strain rate, the dislocation was initially pinned due to the formation of an almost sessile segment leading to high critical stress.

36 MATERIALS SCIENCE↗