Results for “Crystal Characterization” — Page 3

NASA NTRS2007

Solution Growth and Characterization of Single Crystals on Earth and in Microgravity

Crystal growth has been of interest to physicists and engineers for a long time because of their unique properties. Single crystals are utilized in such diverse applications as pharmaceuticals, computers, infrared detectors, frequency measurements, piezoelectric devices, a variety of high-technology devices, and sensors. Solution crystal growth is one of the important techniques to grow a variety of crystals when the material decomposes at the melting point and a suitable solvent is available to make a saturated solution at a desired temperature. In this Technical Memorandum (TM) an attempt is made to give the fundamentals of growing crystals from solution including improved designs of various crystallizers. Since the same solution crystal growth technique could not be used in microgravity, the authors proposed a new cooled-sting technique to grow crystals in space. The authors experience from conducting two Space Shuttle solution crystal growth experiments are also detailed in this TM and the complexity of solution growth experiments to grow crystals in space are also discussed. These happen to be some of the early experiments performed in space, and various lessons learned are described. A brief discussion of protein crystal growth that shares basic principles of the solution growth technique is given, along with some flight hardware information for growth in microgravity.

Aggarwal, M. D.↗

NASA NTRS2021

Phase Diagram, Melt Growth and Characterization of Cd0.8Zn0.2Te Crystals for X-Ray Detector

In this study, the solidus curve of the Cd0.8Zn0.2Te homogeneity range was constructed from the partial pressure measurements by optical absorption technique which provided the information of the melt growth parameters to process crystals with the required electrical resistivity. The melt growth of Cd0.8Zn0.2Te crystals were then processed by directional solidification under controlled Cd overpressure. During the growth experiments, several procedures have been developed to improve the crystalline quality: (1) minimizing the contamination of impurities (2) improving the structural defects and (3) minimizing the Te-precipitates within the grown crystals to enhance charge transport properties. Additionally, the thermal conductivity, electrical conductivity, and Seebeck coefficient of a vapor-grown CdTe and two melt-grown Cd0.8Zn0.2Te crystals were measured between 190oC and 780oC to provide an in-depth understanding of the thermal and electrical conduction mechanisms of the crystals as well as the prospect of its thermoelectric applications.

x-ray detector↗

NASA NTRS1975

Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

An exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out. Two methods of obtaining the microwave skin depth, one for mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

Castle, J. G.↗

NASA NTRS1975

Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

The exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out during the period ending May 1974. Two methods of obtaining the microwave skin depth, one for the mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space-related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

Castle, J. G.↗

NASA NTRS2002

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0<x<0.4). Energy band gaps at room temperature were determined from optical transmission measurements and a best fit curve to the band gap vs. composition, x, data gives a bowing parameter of 1.45. Low-temperature photoluminescence (PL) spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for the ZnSe(1-x),Te(x), samples, 0.09<x<0.39. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples. To validate numerical codes, in-situ monitoring during the PVT of HgI2 was designed. Optical absorption spectra of the vapor phase over HgI2 were measured for wavelengths between 200 and 600nm at sample temperatures between 349 and 610K. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were determined. From these constants the vapor pressure of HgI2 was established as a function of temperature for the liquid and the solid Beta-phases To characterize the growth conditions during the PVT growth of In-doped ZnSe the optical absorbance of the vapor phase over the In-Se system were measured and were used to obtain the partial pressures of Se2(g) and In2Se(g).

Su, Ching-Hua↗

NASA NTRS1998

Crystallization of Chicken Egg White Lysozyme from Sulfate Salts

It has been "known" that chicken egg white lysozyme does not crystallize from sulfate, particularly ammonium sulfate, salts, but instead gives amorphous precipitates. This has been the basis of several studies using lysozyme comparing macromolecule crystal nucleation and amorphous precipitation. Recently Ries-Kautt et al (Acta Cryst D50, (1994) 366) have shown that purified isoionic CEWL could be crystallized from low concentrations of sulfate at basic pH, and we subsequently showed that in fact CEWL could be purified in both the tetragonal and orthorhombic forms using ammonium sulfate over the pH range 4.0 to 7.8 (Acta Cryst D53, (1997) 795). We have now extended these observations to include a range of common sulfate salts, specifically sodium, potassium, rubidium, magnesium, and manganese sulfates. In all cases but the manganese sulfates both the familiar tetragonal and orthorhombic forms were obtained, with unit cell dimensions close to those known for the "classic" sodium chloride crystallized forms. Manganese sulfate has only yielded orthorhombic crystals to date. All crystallizations were carried out using low (typically less than or equal to 6 M) salt and high (greater than approximately 90 mg/ml) protein concentrations. As with ammonium sulfate, the tetragonal - orthorhombic phase shift appears to be a function of both the temperature and the protein concentration, with higher temperatures and concentrations favoring the orthorhombic and lower the tetragonal form. The phase change range is somewhat reduced for the sulfate salts, depending upon conditions being typically between approximately 15 - 20 C. Both the magnesium and manganese sulfates gave crystals at salt concentrations over 0.6 M as well, with magnesium sulfate giving a very slowly nucleating and growing hexagonal form. A triclinic crystal form, characterized by aggressively small crystals (typically 0.1 mm in size) has been occasionally obtained from ammonium sulfate. Finally, preliminary spot solubility determinations have suggested that in some cases the solubility increases with increasing salt concentrations.

Forsythe, Elizabeth↗

NASA NTRS1999

Detached Growth of Germanium and Germaniumsilicon

Up to now, detached growth was observed mainly under microgravity, i.e. under the absence of hydrostatic pressure that hinders the formation of a free melt meniscus. the detached growth of germanium doped with gallium was obtained under 1 g conditions, the growth was performed in quartz-glass ampoule. Part of the crystal grew without wall contact, the detached growth was observed in-situ with a CCD-camera as well as after the growth process in form of growth lines and the formation of <111> facets on the crystal surface. GeSi crystal (oriientation: <111>, maximum silicon content: 4 at%, seed material: Ge) was grown in a pBN crucible (excluding the possibility of in-situ monitoring of the growth process). The grown crystal exhibits three growth facets, indicating also wall free growth. Surface analysis of the crystals (NDIC, SEM) and characterization of crystal segregation (EDAX, resistivity measurement) and defect structure (EPD, x-ray diffraction measurements) will be presented.

Dold, P.↗

NASA NTRS1977

Coarse-grained basalt 71597 - A product of partial olivine accumulation

Rock 71597, a coarse-grained plagioclase-poikilitic basalt that contains 15.8% MgO and 19.3% modal olivine, is described. Olivine and ilmenite crystals occur in two size generations, and large subequant olivine crystals, small 'matrix' olivines, and large ilmenite crystals are characterized. Since large olivine and ilmenite crystals with skeletal habits suggestive of crystallization under relatively rapid cooling are found in a rock whose texture is consonant with slower cooling, it is suggested that the large skeletal crystals formed toward the more rapidly cooled margin of a flow and accumulated by gravitational crystal settling toward the flow's interior. In support of this hypothesis, calculations indicate that the observed olivine compositions are approximately 10 mol% too Fe-rich to have crystallized from a melt of composition corresponding to that of 71597.

Warner, R. D.↗

NASA NTRS2003

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions.

Su, Ching-Hua↗

NASA NTRS2003

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. Significant effects of gravity vector orientation on the growth crystal morphology and point defect distribution were observed.

Source record↗

NASA NTRSDate not supplied

Overview of the Lunar Gateway External Contamination Environment

As a part of the Artemis mission, Gateway will be a long duration space station in a near rectilinear halo orbit around the Moon. Gateway will be exposed to a variety of external contamination sources, which can degrade external hardware / surfaces and impact science utilization objectives. Requirements and methodologies addressing material outgassing, chemical and electric thruster plumes, vacuum venting, and visiting vehicle interactions have been developed by the Gateway Induced Environments team to ensure vehicle performance and mission success. The external contamination requirements and integration process are described along with required data deliverables. Integrated external contamination analyses are conducted by the Gateway Environments Team to assess compliance with external contamination requirements. This paper provides a current status of integration activities and analysis results, as well as future plans to improve external contamination characterization.

Crystal A. Quiroz↗

NASA NTRS2024

Overview of the Lunar Gateway External Contamination Environment

As a part of the Artemis mission, Gateway will be a long duration space station in a near rectilinear halo orbit around the Moon. Gateway will be exposed to a variety of external contamination sources, which can degrade external hardware / surfaces and impact science utilization objectives. Requirements and methodologies addressing material outgassing, chemical and electric thruster plumes, vacuum venting, and visiting vehicle interactions have been developed by the Gateway Induced Environments team to ensure vehicle performance and mission success. The external contamination requirements and integration process are described along with required data deliverables. Integrated external contamination analyses are conducted by the Gateway Environments Team to assess compliance with external contamination requirements. This paper provides a current status of integration activities and analysis results, as well as future plans to improve external contamination characterization.

Crystal A Quiroz↗

NASA NTRSDate not supplied

Overview of the Lunar Gateway External Contamination Environment

As a part of the Artemis mission, Gateway will be a long duration space station in a near rectilinear halo orbit around the Moon. Gateway will be exposed to a variety of external contamination sources, which can degrade external hardware / surfaces and impact science utilization objectives. Requirements and methodologies addressing material outgassing, chemical and electric thruster plumes, vacuum venting, and visiting vehicle interactions have been developed by the Gateway Induced Environments team to ensure vehicle performance and mission success. The external contamination requirements and integration process are described along with required data deliverables. Integrated external contamination analyses are conducted by the Gateway Environments Team to assess compliance with external contamination requirements. This paper provides a current status of integration activities and analysis results, as well as future plans to improve external contamination characterization.

thruster plumes↗

NASA NTRS1996

Characterization of zinc selenide single crystals

ZnSe single crystals of high quality and low impurity levels are desired for use as substrates in optoelectronic devices. This is especially true when the device requires the formation of homoepitaxial layers. While ZnSe is commercially available, it is at present extremely expensive due to the difficulty of growing single crystal boules with low impurity content and the resultant low yields. Many researchers have found it necessary to heat treat the crystals in liquid Zn in order to remove the impurities, lower the resistivity and activate the photoluminescence at room temperature. The physical vapor transport method (PVT) has been successfully used at MSFC to grow many single crystals of II-VI semiconducting materials including ZnSe. The main goal at NASA has been to try to establish the effect of gravity on the growth parameters. To this effect, crystals have been grown vertically upwards or horizontally. Both (111) and (110) oriented ZnSe crystals have been obtained via unseeded PVT growth. Preliminary characterization of the horizontally grown crystals has revealed that Cu is a major impurity and that the low temperature photoluminescence spectra is dominated by the copper peak. The ratio of the copper peak to the free exciton peak is being used to determine variations in composition throughout the crystal. It was the intent of this project to map the copper composition of various crystals via photoluminescence first, then measure their electrical resistivity and capacitance as a function of frequency before proceeding with a heat treatment designed to remove the copper impurities. However, equipment difficulties with the photoluminescence set up, having to establish a procedure for measuring the electrical properties of the as-grown crystals and time limitations made us re-evaluate the project goals. Vertically grown samples designated as ZnSe-25 were chosen to be measured electrically since they were not expected to show as much variation in their composition through their cross-section as the horizontally grown samples.

Gerhardt, Rosario A.↗

NASA NTRS1987

Growth and characterization of cubic SiC single-crystal films on Si

Morphological and electrical characterization results are presented for cubic SiC films grown by chemical vapor deposition on single-crystal Si substrates. The films, up to 40 microns thick, were characterized by optical microscopy, (SEM), (TEM), electron channeling, surface profilometry, and Hall measurements. A variety of morphological features observed on the SiC films are described. Electrical measurements showed a decrease in the electron mobility with increasing electron carrier concentration, similar to that observed in Si. Room-temperature electron mobilities up to 520 sq cm/V-s (at an electron carrier concentration of 5 x 10 to the 16th/cu cm) were measured. Finally, a number of parameters believed to be important in the growth process were investigated, and some discussion is given of their possible effects on the film characteristics.

Powell, J. Anthony↗

NASA NTRS2012

Wideband Single-Crystal Transducer for Bone Characterization

The microgravity conditions of space travel result in unique physiological demands on the human body. In particular, the absence of the continual mechanical stresses on the skeletal system that are present on Earth cause the bones to decalcify. Trabecular structure decreases in thickness and increases in spacing, resulting in decreased bone strength and increased risk of injury. Thus, monitoring bone health is a high priority for long-term space travel. A single probe covering all frequency bands of interest would be ideal for such measurements, and this would also minimize storage space and eliminate the complexity of integrating multiple probes. This invention is an ultrasound transducer for the structural characterization of bone. Such characterization measures features of reflected and transmitted ultrasound signals, and correlates these signals with bone structure metrics such as bone mineral density, trabecular spacing, and thickness, etc. The techniques used to determine these various metrics require measurements over a broad range of ultrasound frequencies, and therefore, complete characterization requires the use of several narrowband transducers. This is a single transducer capable of making these measurements in all the required frequency bands. The device achieves this capability through a unique combination of a broadband piezoelectric material; a design incorporating multiple resonator sizes with distinct, overlapping frequency spectra; and a micromachining process for producing the multiple-resonator pattern with common electrode surfaces between the resonators. This device consists of a pattern of resonator bars with common electrodes that is wrapped around a central mandrel such that the radiating faces of the resonators are coplanar and can be simultaneously applied to the sample to be measured. The device operates as both a source and receiver of acoustic energy. It is operated by connection to an electronic system capable of both providing an excitation signal to the transducer and amplifying the signal received from the transducer. The excitation signal may be either a wide-bandwidth signal to excite the transducer across its entire operational spectrum, or a narrow-bandwidth signal optimized for a particular measurement technique. The transducer face is applied to the skin covering the bone to be characterized, and may be operated in through-transmission mode using two transducers, or in pulse-echo mode. The transducer is a unique combination of material, design, and fabrication technique. It is based on single-crystal lead magnesium niobate lead titanate (PMN-PT) piezoelectric material. As compared to the commonly used piezoceramics, this piezocrystal has superior piezoelectric and elastic properties, which results in devices with superior bandwidth, source level, and power requirements. This design necessitates a single resonant frequency. However, by operating in a transverse length-extensional mode, with the electric field applied orthogonally to the extensional direction, resonators of different sizes can share common electrodes, resulting in a multiply-resonant structure. With carefully sized resonators, and the superior bandwidth of piezocrystal, the resonances can be made to overlap to form a smooth, wide-bandwidth characteristic.

Liang, Yu↗

NASA NTRS1999

Low Temperature Photoluminescence of PVT Grown ZnSe and ZnSeTe

ZnSe and ZnSeTe single crystals were grown by physical vapor transport (PVT) technique horizontally and vertically. The grown ZnSe and ZnSeTe single crystals were characterized by low temperature photoluminescence at 5 to 10 K using the 3.4 eV emission of an argon laser. The intensity of the sharp near band edge defect lines at 2.799, 2.783 eV and the intrinsic free exciton line at 2.802 eV were mapped on various crystal surfaces with different orientations to the gravitational field. The results show the effects of gravity vector orientation on the defect segregation. Comparison of the photoluminescence spectra of the ZeSe crystal before and after annealing in the Zn vapor shows that the 2.783 eV line of ZnSe crystal is related to the zinc vacancy. The photoluminescence spectra of the ternary ZnSeTe crystal were characterized by a single broad band from 2.2 to 2.4 eV, with a Full Width at Half Maximum (FWHM) of about 100 meV. The temperature dependence of the peak position and intensity were determined from 7 to 150 K.

Wang, Ling Jun↗

NASA NTRS1991

Real time quantitative imaging for semiconductor crystal growth, control and characterization

A quantitative real time image processing system has been developed which can be software-reconfigured for semiconductor processing and characterization tasks. In thermal imager mode, 2D temperature distributions of semiconductor melt surfaces (900-1600 C) can be obtained with temperature and spatial resolutions better than 0.5 C and 0.5 mm, respectively, as demonstrated by analysis of melt surface thermal distributions. Temporal and spatial image processing techniques and multitasking computational capabilities convert such thermal imaging into a multimode sensor for crystal growth control. A second configuration of the image processing engine in conjunction with bright and dark field transmission optics is used to nonintrusively determine the microdistribution of free charge carriers and submicron sized crystalline defects in semiconductors. The IR absorption characteristics of wafers are determined with 10-micron spatial resolution and, after calibration, are converted into charge carrier density.

Wargo, Michael J.↗