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At least 55 records · Page 3

Simulating plasma wave propagation on a superconducting quantum chip

Quantum computers may one day enable the efficient simulation of strongly coupled plasmas that lie beyond the reach of classical computation in regimes where quantum effects are important and the scale separation is large. Here, in this article, we take a first step toward efficient simulation of quantum plasmas by demonstrating linear plasma wave propagation on a superconducting quantum chip. Using high-fidelity and highly expressive device-native gates, combined with an error-mitigation technique, we simulate the scattering of laser pulses from inhomogeneous plasmas. Our approach is made feasible by the identification of a suitable local spin model whose excitations mimic plasma waves, and whose circuit implementation requires a lower gate count than other proposed approaches that would require a future fault-tolerant quantum computer. This work opens avenues to study more complicated phenomena that cannot be simulated efficiently on classical computers, such as nonlinear quantum dynamics when strongly coupled plasmas are driven out of equilibrium.

general physics

Optical nanofiber testbeds for benchmarking membrane-waveguide photonic integrated circuit platforms toward on-chip quantum inertial sensing

Recent advances in cold atom interferometry with optical and magnetic atom guides have set the stage for quantum inertial sensors capable of operating in dynamic environments. In this work, we present three key innovations—evanescent-field (EF) atom guides, optical nanofiber testbeds, and membrane-waveguide photonic integrated circuit (PIC) platforms—to advance EF-guided atom interferometry. First, we demonstrate EF atom guides on optical nanofiber testbeds, which serve as performance benchmarks for our membrane-waveguide PIC platforms. Second, we achieve low-power (⁠ ~ 5 mW) guiding of freely moving, laser-cooled 133 Cs atoms in two-color, traveling-wave EF optical dipole traps at the novel, heat-efficient magic wavelengths of 793 and 937 nm (i.e., “793/937-nm EF atom guides”). Concurrently, we design and fabricate membrane-waveguide PIC platforms for these EF atom guides; in our prior work, we showed that these structures safely accommodate 4–6 times the required optical trap power under vacuum and enable dense cold atom generation via magneto-optical trapping in the vicinity of the optical wavguide for efficient loading. Third, we verify preserved atomic coherence via microwave fields and EF-coupled Doppler-free Raman beams; to our knowledge, this is the first report of coherence fringes driven by co-propagating EF-coupled Raman beams with only 150 nW of total optical power. By providing a direct comparison between optical nanofiber testbeds and membrane-waveguide PIC platforms, our results lay critical groundwork for the on-chip realization of EF-guided atom interferometry and the development of fully integrated, compact, lightweight, and low-power quantum accelerometers and gyroscopes.

Orozco, Adrian [Sandia National Laboratories (SNL-

Studying-Polymers-on a-Chip (SPOC)

Code developed for Studying-Polymers-on a-Chip (SPOC) project LDRD-LW-006. Public release needed for sharing code for publication.

Jimenez, JayvicCristian [Lawrence Livermore Nation

On-chip terahertz emission from Floquet-Bloch states [Invited]

Floquet engineering uses time-periodic electromagnetic fields to modify the electronic properties of quantum materials via the creation of Floquet-Bloch states. These photon-dressed states inherit features from both the material and the driving field, enabling the exploration and control of quantum phenomena in light-matter hybrid systems. In non-centrosymmetric materials, shift currents can arise from the quantum geometric properties of electronic wavefunctions. However, shift currents from Floquet-Bloch states remain experimentally unexplored. Here, we employ an on-chip optoelectronic circuit to detect intrinsic terahertz emission from Floquet-Bloch states in T d -WTe 2 under intense optical driving. We observe strong edge-localized terahertz emission that scales linearly with the driving field, consistent with the theoretical prediction for shift currents generated by Floquet-Bloch states. The results advance our understanding of strongly driven quantum materials and provide insights for developing efficient, bias-free terahertz sources for future optoelectronic technologies.

Li, Xinyu [Max Planck Institute for the Structure

On-chip frequency-bin quantum photonics

Abstract Frequency-bin encoding furnishes a compelling pathway for quantum information processing systems compatible with established lightwave infrastructures based on fiber-optic transmission and wavelength-division multiplexing. Yet although significant progress has been realized in proof-of-principle tabletop demonstrations, ranging from arbitrary single-qubit gates to controllable multiphoton interference, challenges in scaling frequency-bin processors to larger systems remain. In this Perspective, we highlight recent advances at the intersection of frequency-bin encoding and integrated photonics that are fundamentally transforming the outlook for scalable frequency-based quantum information. Focusing specifically on results on sources, state manipulation, and hyperentanglement, we envision a possible future in which on-chip frequency-bin circuits fulfill critical roles in quantum information processing, particularly in communications and networking.

electro-optic modulators

Performance and automatic calibration scheme of the waveform sampler in the ETROC2 ASIC chip

The waveform sampler in the CMS ETROC2 chip for LGAD gain aging monitoring is a 2.56-GS/s 12-bit 8x-Interleaved ADC that consists of a coarse SAR stage, and a fine stage. This architecture delivers high performance on a relatively modest 65 nm process, while requires finding up to 24 calibration constants through calibration. We developed an automatic calibration method using charge injection test data. After calibration, the baseline random error is reduced by a factor of 2.5–3 compared to the default calibration, and a 5% charge measurement precision is achieved in 15 fC charge injection tests.

Fu, Tao [Unlisted, US]

Robotic Assembly of Multi-Chip Modules Using Artificial Intelligence

With many properties of dark matter remaining a mystery, the OSCURA experiment aims to detect light dark matter particles using 1,536 Multi-Chip Modules (MCMs), containing a total of 24,576 skipper CCDs. Currently, each MCM is assembled by hand a time-consuming and error-prone process that can be automated. In this ongoing work, we present an automated assembly robot that leverages modern computer vision and artificial intelligence to assemble the OSCURA MCMs. This approach reduces cost, time, and error in the packaging of OSCURA sensors.

Arteaga, Matthew [Northern Illinois U.; Fermilab]

Radiation Effects on Network on Chips (NoC) Laboratory Directed Research and Development (LDRD) project

This project was motivated by State-of-the-Art (SOTA) technology that incorporates Network on Chips (NOC) for efficient data communication across the various computer kernels. For example, on the AMD Versal Field Programmable Gate Arrays (FPGA), an NoC has been incorporated for fast data communication from the programmable logic and other computer kernels (processing system, adaptable intelligence engines, etc.). The radiation effects on the legacy technology of this FPGA, such as the programmable logic, are well understood, and established methods exist to measure cross-sections when new families/generations are released; however, newly incorporated technologies, such as the NoC, are not fully understood and could introduce new failure points into the mission space.

36 MATERIALS SCIENCE

Digital Silicon Photomultiplier Chip Testing

Silicon Photomultipliers (SiPMs) are highly sensitive photodetectors. Traditional analog SiPMs require complex external readout electronics. Digital SiPMs (dSiPMs) include digital readout circuitry directly on-chip, offering superior timing resolution, reduced power consumption and compact size, pixel-level masking for active noise reduction. The primary objectives of this study are to, verify digital logic integrity of the shift registers used for controlling the pixel masking circuit, and determine the dark count rate of individual pixels as a function of bias voltage and clock frequency. I observe and explain behavior of the shift register and counting circuit.

Graham, Bennett [U. Chicago (main)]

Intelligent Pixel Detectors: Towards a Radiation Hard ASIC with On-Chip Machine Learning in 28 nm CMOS

Detectors at future high energy colliders will face enormous technical challenges. Disentangling the unprecedented numbers of particles expected in each event will require highly granular silicon pixel detectors with billions of readout channels. With event rates as high as 40 MHz, these detectors will generate petabytes of data per second. To enable discovery within strict bandwidth and latency constraints, future trackers must be capable of fast, power efficient, and radiation hard data-reduction at the source. We are developing a radiation hard readout integrated circuit (ROIC) in 28nm CMOS with on-chip machine learning (ML) for future intelligent pixel detectors. We will show track parameter predictions using a neural network within a single layer of silicon and hardware tests on the first tape-outs produced with TSMC. Preliminary results indicate that reading out featurized clusters from particles above a modest momentum threshold could enable using pixel information at 40 MHz.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND

Simulating Alpha Particles Incident on MKID Chips for Quantum Sensitivity Analysis

• Background noise from ionizing decay poses challenges for MKIDs due to their sensitivity to small energy depositions. • Our group bakes the MKID housing lid in radon to study effects of alphas from daughter isotopes in the decay chain. • The impact of alpha particles on the chip depends on their energy, making their distribution key to characterizing and reducing noise in superconducting quantum devices.

Hall, Matthew [Southern California U.]

Sub-tesla On-Chip Nanomagnetic Metamaterial Platform for Angle-Resolved Photoemission Spectroscopy

Magnetically controlled states in quantum materials are central to their unique electronic and magnetic properties. However, direct momentum-resolved visualization of these states via angle-resolved photoemission spectroscopy (ARPES) has been hindered by the disruptive effect of magnetic fields on photoelectron trajectories. Here, we introduce an in situ method that is, in principle, capable of applying magnetic fields up to 1 T. This method uses substrates composed of nanomagnetic metamaterial arrays with alternating polarity. Such substrates can generate strong, homogeneous, and spatially confined fields applicable to samples with thicknesses up to the micron scale, enabling ARPES measurements under magnetic fields with minimal photoelectron trajectory distortion. Here, we demonstrate this minimal distortion with ARPES data taken on monolayer graphene. Our method paves the way for probing magnetic field-dependent electronic structures and studying field-tunable quantum phases with state-of-the-art energy-momentum resolutions.

Magnetic properties

Efficient on-chip terahertz generation and detection with GaN photoconductive emitters

Photoconductive emitters for terahertz generation hold promise for highly efficient down-conversion of optical photons because it is not constrained by the Manley-Rowe relation. Existing terahertz photoconductive devices, however, faces limits in efficiency due to the semiconductor properties of commonly used GaAs materials. Here, we demonstrate that large bandgap semiconductor GaN, characterized by its high breakdown electric field, facilitates the highly efficient generation of terahertz waves in a coplanar stripline waveguide. Towards this goal, we investigated the excitonic contribution to the electro-optic response of GaN under static electric field both through experiments and first-principles calculations, revealing a robust excitonic Stark shift. Using this electro-optic effect, we developed a novel ultraviolet pump-probe spectroscopy for in-situ characterization of the terahertz electric field strength generated by the GaN photoconductive emitter. Our findings show that terahertz power scales quadratically with optical excitation power and applied electric field over a broad parameter range. We achieved an optical-to-terahertz conversion efficiency approaching 100% within the 0.03–1 THz bandwidth at the highest bias field (116 kV/cm) in our experiment. Further optimization of GaN-based terahertz generation devices could achieve even greater optical-to-terahertz conversion efficiencies.

Uzundal, Can B