Electron cyclotron resonance deposition of diamond-like films
Electron cyclotron resonance (ECR) microwave plasma CVD has been developed at low pressures (0.0001 - 0.01 torr) and at ambient and high substrate temperatures (up to 750 C), to achieve large-area (greater than 4 in. diameter) depositions of diamondlike amorphous carbon (a - C:H) films. The application of a RF bias to the substrate stage, which induces a negative self-bias voltage, is found to play a critical role in determining carbon bonding configurations and in modifying the film morphology. There are two distinct types of ECR-deposited diamondlike films. One type of diamondlike film exhibits a Raman spectrum consisting of broad and overlapping, graphitic D (1360/cm, line width = 280/cm) and G (1590/cm, line width 140/cm) lines, and the other type has a broad Raman peak centered at appoximately 1500/cm. Examination of plasma species by optical emission spectroscopy shows no correlation between the CH-asterisk emission intensity and the deposition rate of diamondklike films.